2N3043
Abstract: No abstract text available
Text: MOTORCLA SC XSTRS/R lE E F D | b3b7554 DOf lt .a ' ì b 2N3043 thru 2N3045 2N3048 MAXIMUM RATINGS Q | , CASE 610A-04, STYLE 1 Rating Symbol Value U nit VCEO 45 Vdc Collector-Base Voltage VCBO 45 Vdc Emitter-Base Voltage Vebo 5.0 Vdc *C 30 mAdc Collector-Emitter Voltage
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b3b7554
2N3043
2N3045
2N3048
10A-04,
2N3044
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K 3264 transistor
Abstract: BD 266 S K 3264 transistor technical data transistor Bd 575 TRANSISTOR BD 168 10 watt power transistor bd BD 266 A transistor BD 139 K1461 BD 140 transistor
Text: MOTOROLA SC 12E D § b3b7554 0aôM7Q1 Q | XSTRS/R F T-^-Oß MOTOROLA SEMICONDUCTOR TECHNICAL DATA PLASTIC M ED IU M POWER SILICON NPN TRANSISTOR 1.5 AMPERE POWER TRANSISTOR . . . designed fo r use as audio amplifiers and drivers utilizing com plem entary o r quasi com plementary circuits.
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b3b7254
AN-4151
K 3264 transistor
BD 266 S
K 3264 transistor technical data
transistor Bd 575
TRANSISTOR BD 168
10 watt power transistor bd
BD 266 A
transistor BD 139
K1461
BD 140 transistor
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MM8001
Abstract: M8-001 MM8000 M8000
Text: MOTOROLA SC XSTRS/R F 4bE b3b7554 00^4242 b «NOTh D MOTOROLA •I SEMICONDUCTOR l TECHNICAL DATA MM8000 MM8001 The RF Line NPN SILICON AM PLIFIER TRANSISTORS N PN S IL IC O N H IG H -F R E Q U E N C Y T R A N S IS T O R . . . designed for high-frequency C.A.T.V. amplifier applications. Suit
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b3b7554
MM8000
MM8001
M8001)
240ohm
MM8001
M8-001
M8000
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2SC3281 2SA1302
Abstract: motorola transistor cross reference MJH16010A 2SA1302 transistor npn pnp transistor bipolar cross reference MJH6678 2sc3281 transistor 2SA1302 data transistor MJH6678 MJH16018
Text: MOT OROL A TABLE 6 — SC XSTRS/R F 4bE PLASTIC TO-218/TO-247 D b3b7554 OOiaiiOfl T •flO Tt (During the second half of 1991, devices listed below will change from Case - 340-02 to Case 340F-02 and the part number prefix will become MJW .) T - $ 3 > 'l3
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O-218/TO-247
340F-02
O-218AC)
340F-02
MJH16212*
MJH16018*
MJH16206*
MJH6678*
MJH16010A
MJH16210*
2SC3281 2SA1302
motorola transistor cross reference
2SA1302 transistor
npn pnp transistor bipolar cross reference
MJH6678
2sc3281 transistor
2SA1302 data
transistor MJH6678
MJH16018
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TRANSISTOR Y1D
Abstract: 2N3924 2n3924 equivalent
Text: MOTOROLA SC XSTRS/R b3b7554 00^403(3 3 •H0Tb MbE D F ^ MOTOROLA ■i SEM ICONDUCTOR i TECHNICAL DATA 3 3 -0 5 2N3924 The R F Lin e NPN SILICON RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR . . . optim ized A n n u la r tra n sisto r fo r larg e-sig n al pow eram p lifier and d riv e r ap p licatio n s to 300 MHz.
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b3b7554
2N3924
TRANSISTOR Y1D
2N3924
2n3924 equivalent
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Untitled
Abstract: No abstract text available
Text: M OT O R O L A SC X S T R S /R 15E D I F b3b7554 5 | r-5^17 MAXIMUM RATINGS Symbol Value U nit Collector-Emitter Voltage VcEO 15 Vdc Collector-Emitter Voltage R q E *s 1 0 ohms VCER 20 Vdc Collector-Base Voltage VCBO 40 Vdc Emitter-Base Voftage Ve b o 5.0
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b3b7554
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transistor S193
Abstract: 2N5193 E-7706 2N5195 s193 IC LM 393 ST
Text: MO TO RO LA SC XSTRS/R F 1EE D | b3b7554 000453*4 2 | 7^33"/9 2N5193 MOTOROLA thru SEMICONDUCTOR TECHNICAL DATA 2N5195 S IL IC O N PNP POWER T R A N S IS T O R S 4 A M P ER E POWER T R A N S IS T O R S S IL IC O N PNP . . . fo r u se in p o w e r a m p lifie r a n d s w itc h in g circuits, — e xc e lle n t safe
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b3b7554
2N5193
2N5195
transistor S193
2N5193
E-7706
2N5195
s193
IC LM 393 ST
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MQ-2
Abstract: No abstract text available
Text: MOTOROLA SC XSTRS/R F -f-WX} 15E D I b3b7554 DGfibSEB 7 | M A X I M U M R A T IN G S Rating Symbol MD2218,A MD2219A.F MQ2218/A MD2218AF MQ2219,A MD2219AF Unit Collector-Emitter Voltage v CEO 30 40 Vdc Collector-Base Voltage VCBO 60 75 Vdc Emitter-Base Voltage
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b3b7554
MD2218
MD2219A
MQ2218/
MD2218AF
MQ2219
MD2219AF
MD2219A
MD2218AF,
MD2219F
MQ-2
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2n4093
Abstract: 2N4091 2N4092 2n4093 motorola
Text: MOTOROLA SC XSTR S/R F 15E D | b3b7554 Q O fltibn 1 | 2N4091' thru 2N4093 CASH 22-03, STYLE 3 TO-18 TO-206AA MAXIMUM RATINGS Symbol Value Drain-Source Voltage Vos 40 Vdc Drain-Gate Voltage Vdg 40 Vdc Gate«Source Voltage Rating Unit Vg S 40 Vdc Gate Current
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b3b7554
2N4091'
2N4093
O-206AA)
2N4091
2N4092
2N4093
2n4093 motorola
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bcx79
Abstract: BCX79-8
Text: nOTOROLA SC -CXSTRS/R 6367254 ~ °i FJ MOTOROLA SC »H b3b7554 960 C X S T R S /R F D oaivas S D 81725 T -a ? -a B C X 7 8 ,- 7 ,-8 ,-9 ,- 1 0 B C X 7 9 ,- 7 ,-8 ,-9 ,- 1 0 M A X IM U M RATINGS S ym b ol BCX 78 BCX 79 U n it C ollector-E m itter Voltage
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b3b7554
bcx79
BCX79-8
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PT4572A
Abstract: TO-117A az4v pt45
Text: nOTOROLA SC XSTRS/R F 4bE D • b3b7554 00^5132 M ■ MOTb T -2 S -Û 5 MOTOROLA ■i SEM ICONDUCTOR ■ TECHNICAL DATA PT45/2A The RF Line NPN Silicon High Frequency Transistor lc = zoo mA HIGH FREQUENCY TRANSISTOR NPN SILICON . . . designed for broadband class A applications requiring high output, low distortion
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b3b7554
PT45/2A
244D-01.
O-117A)
PT4572A
TO-117A
az4v
pt45
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MPF3330
Abstract: No abstract text available
Text: MOTOROLA SC XSTRS/R F 15E D | b3b7554 0001.705 T I T"Ä! MPF990 For Specifications, See MPF930 _ _ _ _ . MPF3330 CASE 29-04, STYLE 5 TO-92 TO-226AA M A X I M U M R A T IN G S Sym bol Valu» U nit Drain-Gate Voltage Vdg 20 Vdc Gate-Source Voltage Vq s 20
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b3b7554
MPF990
MPF930
MPF3330
O-226AA)
2N5460
MPF3330
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MRF522
Abstract: SE317 318b MRFC521
Text: 12E D I MOTOROLA b3b7554 GGÖ7732 MOTOROLA SC T | XSTRS/R F SE M IC O N D U C T O R mmmmm—mmimmmmm TECHNICAL DATA MRF521 MRFC521 MRF522 MRF524 MRF5211,L The RF Line P N P Silicon High-Frequency Transistors . designed primarily for use in the high-gain, low-noise small-signal amplifiers for
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b3b7554
MRF521
MRFC521
MRF522
MRF524
MRF5211
OT-143
MRF52
SE317
318b
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chip die npn transistor
Abstract: No abstract text available
Text: MOTOROLA SC XSTRS/R F 4bE » • b3b7554 O G T E T MB 2 «IIO Tb T-3I- 15 MOTOROLA SEMICONDUCTOR TECHNICAL DATA J 2C2857HV Chip NPN Silicon High-Frequency Transistor DM0 u h m Discrete Military Operation . .designed primarily for use in high-gain, low-noise amplifiers, oscillators and mixers.
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b3b7554
2C2857HV
chip die npn transistor
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MTA5N50E
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTA5N50E Fully Isolated T M O S E-FET ™ Power Field Effect TVansistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate T h is high vo lta g e M O S F E T uses an ad v a n c e d te rm in a tio n
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MTA5N50E
AN1040.
b3b725M
MTA5N50E
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2n3735
Abstract: 2N3734 2N3725
Text: MOTOROLA SC XSTRS/R F 15E 0 I b3l.7254 Q0flb3fc.l 7 | MAXIMUM RATINGS Symbol Rating 2N373S 2N3734 2N3737 Collector-Emitter Voltage VCEO 30 50 Vdc Collector-Base Voltage VCBO 50 75 Vdc Emitter-Base Voltage Ve b O Collector Current — Continuous •c 2N3734
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2N373S
2N3734
2N3737
2N3735
2N3735
O-205AD)
2N3737
2N3725
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Untitled
Abstract: No abstract text available
Text: M A X IM U M RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO -8 0 Vdc Collector-Base Voltage VCBO -8 0 Vdc Emitter-Base Voltage Vebo -5 .0 Vdc Collector Current — Continuous >C -1 .0 Ade Total Device Dissipation @ T/\ = 25°C Derate above 25°C
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b3b7554
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MMBF112L
Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
Text: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty
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06050L
MMBD914L
BAS16L
BAL99L
MBAV70L
MBAV99L
MBAV74
BD2835XL
MBD2836XL
MMBD2837XL
MMBF112L
MFE521
MMBF112
2N3797 equivalent
MFE131 equivalent
MPS5210
BC557 SOT23
8C448
BC459C
mfe211
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2N2223
Abstract: 2N2060 2n2223 transistor 2N2223A 2N2480
Text: MOTOROLA SC -CXSTRS/R 6367254 ~TL> F> MOTOROLA SC XSTRS/R 96D F Collector-Emitter Voltage 2N2060 Symbol 2N2223.A VCEO 60 Collector-Emitter Voltage VCER 80 Collector-Base Voltage VCBO 100 Emitter-Base Voltage VEBO 7.0 Collector Current — Continuous PD Total Device Dissipation
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0S37b
2N2060
2N2223
2N2480
2n2223 transistor
2N2223A
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2955E
Abstract: MTA2955E
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MTA2955E Fully Isolated TMOS E-FET 1TM Pow er Field E ffect Transistor Motorola Preferred Device P-Channel Enhancement-Mode Isolated T0-220 TMOS POWER FET 7.0 AMPERES 60 VOLTS RDS on = 0.30 OHM
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T0-220
O-220
b3b7254
2955E
b3b7554
MTA2955E
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IR 92 0151
Abstract: MM5680 to204ae
Text: HOTOROLA SC XSTRS/R F ML E ^ 7 2 5 4 D 00*52507 b • MOTt,* p £ ? - Z t MOTOROLA SEMICONDUCTOR ■ TECHNICAL DATA Discrete Military Products PNP Silicon Sm all-Signal Transistor DM0 /I///// . . . designed for general-purpose switching and am plifier applications
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MM5680
MIL-S-19500/xxx
O-116)
IR 92 0151
MM5680
to204ae
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NS 8002 1151
Abstract: TO-66 CASE
Text: M O T O R O L A SC XST RS/ R F EbE D b 3b 7E 5 4 G G m 4 3 4 MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA M JM 3792 DM0 Discrete Military Products Suffixes: HX, H X V m in t PIMP Silicon Pow er Transistor Processed per MIL-S-19500/379 . designed for medium-speed switching and amplifier applications
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MIL-S-19500/379
O-116)
NS 8002 1151
TO-66 CASE
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245A-02
Abstract: No abstract text available
Text: MOTOROLA SC XSTRS/R F 2bE D h3b7254 O Q m M S Ö MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA Discrete Military Products PNP/NPN Silicon Complementary Power Darlington Transistors mo M JM 6052 111/111 (NPN) (PNP) M JM 6059 Suffixes: HX, H X V Processed per
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h3b7254
MIL-S-19500/
O-116)
245A-02
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MJF16206
Abstract: MTP12N10 pin configuration MJH16206 transistor D 1557 K1194 MJW16206 MPF930 TMJE210 ci mc7812 MC1391P
Text: MOTOROLA SC X S T R S / R F 4bE b3b7254 D 00^3470 3 T -3 2 > -O i IflOTb Order this data sheet by MJF16206/D MOTOROLA •i SEMICONDUCTOR m TECHNICAL DATA MJF16206 MJH16206 MJW16206 SCANSWITCH NPN Bipolar Power Deflection Transistors For High and Very High Resolution CRT Monitors
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b3b7254
1-33-OI
MJF16206/D
MJF16206
MJH16206
AN1040
MJF16206
MJH16206
MJW16206
MTP12N10 pin configuration
transistor D 1557
K1194
MPF930
TMJE210
ci mc7812
MC1391P
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