B3B7554 Search Results
B3B7554 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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2N3043Contextual Info: MOTORCLA SC XSTRS/R lE E F D | b3b7554 DOf lt .a ' ì b 2N3043 thru 2N3045 2N3048 MAXIMUM RATINGS Q | , CASE 610A-04, STYLE 1 Rating Symbol Value U nit VCEO 45 Vdc Collector-Base Voltage VCBO 45 Vdc Emitter-Base Voltage Vebo 5.0 Vdc *C 30 mAdc Collector-Emitter Voltage |
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b3b7554 2N3043 2N3045 2N3048 10A-04, 2N3044 | |
K 3264 transistor
Abstract: BD 266 S K 3264 transistor technical data transistor Bd 575 TRANSISTOR BD 168 10 watt power transistor bd BD 266 A transistor BD 139 K1461 BD 140 transistor
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b3b7254 AN-4151 K 3264 transistor BD 266 S K 3264 transistor technical data transistor Bd 575 TRANSISTOR BD 168 10 watt power transistor bd BD 266 A transistor BD 139 K1461 BD 140 transistor | |
MM8001
Abstract: M8-001 MM8000 M8000
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b3b7554 MM8000 MM8001 M8001) 240ohm MM8001 M8-001 M8000 | |
2SC3281 2SA1302
Abstract: motorola transistor cross reference MJH16010A 2SA1302 transistor npn pnp transistor bipolar cross reference MJH6678 2sc3281 transistor 2SA1302 data transistor MJH6678 MJH16018
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O-218/TO-247 340F-02 O-218AC) 340F-02 MJH16212* MJH16018* MJH16206* MJH6678* MJH16010A MJH16210* 2SC3281 2SA1302 motorola transistor cross reference 2SA1302 transistor npn pnp transistor bipolar cross reference MJH6678 2sc3281 transistor 2SA1302 data transistor MJH6678 MJH16018 | |
TRANSISTOR Y1D
Abstract: 2N3924 2n3924 equivalent
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b3b7554 2N3924 TRANSISTOR Y1D 2N3924 2n3924 equivalent | |
Contextual Info: M OT O R O L A SC X S T R S /R 15E D I F b3b7554 5 | r-5^17 MAXIMUM RATINGS Symbol Value U nit Collector-Emitter Voltage VcEO 15 Vdc Collector-Emitter Voltage R q E *s 1 0 ohms VCER 20 Vdc Collector-Base Voltage VCBO 40 Vdc Emitter-Base Voftage Ve b o 5.0 |
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b3b7554 | |
transistor S193
Abstract: 2N5193 E-7706 2N5195 s193 IC LM 393 ST
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b3b7554 2N5193 2N5195 transistor S193 2N5193 E-7706 2N5195 s193 IC LM 393 ST | |
MQ-2Contextual Info: MOTOROLA SC XSTRS/R F -f-WX} 15E D I b3b7554 DGfibSEB 7 | M A X I M U M R A T IN G S Rating Symbol MD2218,A MD2219A.F MQ2218/A MD2218AF MQ2219,A MD2219AF Unit Collector-Emitter Voltage v CEO 30 40 Vdc Collector-Base Voltage VCBO 60 75 Vdc Emitter-Base Voltage |
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b3b7554 MD2218 MD2219A MQ2218/ MD2218AF MQ2219 MD2219AF MD2219A MD2218AF, MD2219F MQ-2 | |
2n4093
Abstract: 2N4091 2N4092 2n4093 motorola
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b3b7554 2N4091' 2N4093 O-206AA) 2N4091 2N4092 2N4093 2n4093 motorola | |
bcx79
Abstract: BCX79-8
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b3b7554 bcx79 BCX79-8 | |
PT4572A
Abstract: TO-117A az4v pt45
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b3b7554 PT45/2A 244D-01. O-117A) PT4572A TO-117A az4v pt45 | |
MPF3330Contextual Info: MOTOROLA SC XSTRS/R F 15E D | b3b7554 0001.705 T I T"Ä! MPF990 For Specifications, See MPF930 _ _ _ _ . MPF3330 CASE 29-04, STYLE 5 TO-92 TO-226AA M A X I M U M R A T IN G S Sym bol Valu» U nit Drain-Gate Voltage Vdg 20 Vdc Gate-Source Voltage Vq s 20 |
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b3b7554 MPF990 MPF930 MPF3330 O-226AA) 2N5460 MPF3330 | |
MRF522
Abstract: SE317 318b MRFC521
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b3b7554 MRF521 MRFC521 MRF522 MRF524 MRF5211 OT-143 MRF52 SE317 318b | |
chip die npn transistorContextual Info: MOTOROLA SC XSTRS/R F 4bE » • b3b7554 O G T E T MB 2 «IIO Tb T-3I- 15 MOTOROLA SEMICONDUCTOR TECHNICAL DATA J 2C2857HV Chip NPN Silicon High-Frequency Transistor DM0 u h m Discrete Military Operation . .designed primarily for use in high-gain, low-noise amplifiers, oscillators and mixers. |
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b3b7554 2C2857HV chip die npn transistor | |
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MTA5N50EContextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTA5N50E Fully Isolated T M O S E-FET ™ Power Field Effect TVansistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate T h is high vo lta g e M O S F E T uses an ad v a n c e d te rm in a tio n |
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MTA5N50E AN1040. b3b725M MTA5N50E | |
2n3735
Abstract: 2N3734 2N3725
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2N373S 2N3734 2N3737 2N3735 2N3735 O-205AD) 2N3737 2N3725 | |
Contextual Info: M A X IM U M RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO -8 0 Vdc Collector-Base Voltage VCBO -8 0 Vdc Emitter-Base Voltage Vebo -5 .0 Vdc Collector Current — Continuous >C -1 .0 Ade Total Device Dissipation @ T/\ = 25°C Derate above 25°C |
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b3b7554 | |
MMBF112L
Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
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06050L MMBD914L BAS16L BAL99L MBAV70L MBAV99L MBAV74 BD2835XL MBD2836XL MMBD2837XL MMBF112L MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211 | |
2N2223
Abstract: 2N2060 2n2223 transistor 2N2223A 2N2480
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0S37b 2N2060 2N2223 2N2480 2n2223 transistor 2N2223A | |
2955E
Abstract: MTA2955E
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T0-220 O-220 b3b7254 2955E b3b7554 MTA2955E | |
IR 92 0151
Abstract: MM5680 to204ae
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MM5680 MIL-S-19500/xxx O-116) IR 92 0151 MM5680 to204ae | |
NS 8002 1151
Abstract: TO-66 CASE
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MIL-S-19500/379 O-116) NS 8002 1151 TO-66 CASE | |
245A-02Contextual Info: MOTOROLA SC XSTRS/R F 2bE D h3b7254 O Q m M S Ö MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA Discrete Military Products PNP/NPN Silicon Complementary Power Darlington Transistors mo M JM 6052 111/111 (NPN) (PNP) M JM 6059 Suffixes: HX, H X V Processed per |
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h3b7254 MIL-S-19500/ O-116) 245A-02 | |
MJF16206
Abstract: MTP12N10 pin configuration MJH16206 transistor D 1557 K1194 MJW16206 MPF930 TMJE210 ci mc7812 MC1391P
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b3b7254 1-33-OI MJF16206/D MJF16206 MJH16206 AN1040 MJF16206 MJH16206 MJW16206 MTP12N10 pin configuration transistor D 1557 K1194 MPF930 TMJE210 ci mc7812 MC1391P |