BCR108W SOT323 Search Results

BCR108W

Abstract: VSO05561
Contextual Info: BCR108W NPN Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in resistor R 1=2.2k, R 2=47k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07184 Type Marking BCR108W WHs Pin Configuration 1=B 2=E Package 3=C SOT323

BCR108W

Abstract: VSO05561
Contextual Info: BCR108W NPN Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in resistor R 1=2.2k, R 2=47k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07184 Type Marking BCR108W WHs Pin Configuration 1=B 2=E Package 3=C SOT323

BCR553

Abstract: BCR108W sot323 BCR133 SOT-23 cimax
Contextual Info: Transistors For complete package outlines, refer to pages PO-1 through PO-6 Bias Resistor Transistors Type Maximum Ratings Characteristics TA=25°C Case j. /x VCEO V BCR108 BCR108W BCR112 BCR116 BCR119 BCR133 BCR133W BCR135 BCR135W BCR141 BCR142 BCR142W

Contextual Info: BCR108. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 =2.2 kΩ, R2 =47 kΩ • BCR108S: Two internally isolated transistors with good matching in one multichip package

marking WHs

Contextual Info: BCR108. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 =2.2 kΩ, R2 =47 kΩ • BCR108S: Two internally isolated transistors with good matching in one multichip package

BCR108

Abstract: BCR108F BCR108S BCR108W BCW66 bcr1
Contextual Info: BCR108. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=2.2 kΩ, R2=47 kΩ • BCR108S: Two internally isolated transistors with good matching in one multichip package • BCR108S: For orientation in reel see

Contextual Info: BCR108. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=2.2 kΩ, R2=47 kΩ • BCR108S: Two internally isolated transistors with good matching in one multichip package • BCR108S: For orientation in reel see

BCR108

Abstract: BCR108F BCR108L3 BCR108S SEMH10
Contextual Info: BCR108./SEMH10 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 =2.2kΩ, R2=47kΩ • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package

BCR108

Abstract: BCR108F BCR108L3 BCR108S BCR108T BCR108W bcr1
Contextual Info: BCR108. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 =2.2kΩ, R2=47kΩ • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package

BCR108

Abstract: BCR108F BCR108L3 BCR108S SEMH10
Contextual Info: BCR108./SEMH10 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 =2.2kΩ, R2=47kΩ • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package

BCR108

Abstract: BCR108F BCR108L3 BCR108S BCR108T BCR108W
Contextual Info: BCR108. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 =2.2 kΩ, R2=47 kΩ • BCR108S: Two internally isolated transistors with good matching in one multichip package • BCR108S: For orientation in reel see

marking WHS sot23

Abstract: transistor marking code whs
Contextual Info: BCR108. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=2.2 kΩ, R2=47 kΩ • BCR108S: Two internally isolated transistors with good matching in one multichip package BCR108/F/L3

Contextual Info: BF799W NPN Silicon RF Transistor 3
For linear broadband amplifier application up to 500 MHz
SAW filter driver in TV tuners 2 1 Type BF799W Marking LKs 1=B Pin Configuration 2=E 3=C VSO05561 Package SOT323 Maximum Ratings Parameter Symbol Collector-emitter voltage

Contextual Info: BF799W NPN Silicon RF Transistor • For linear broadband amplifier application up to 500 MHz 3 • SAW filter driver in TV tuners 2 1 • Pb-free RoHS compliant package Type Marking BF799W LKs Pin Configuration 1=B 2=E Package 3=C SOT323 Maximum Ratings

mar 806

Contextual Info: BFS17W NPN Silicon RF Transistor 3 • For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA 2 1 Type Marking BFS17W MCs Pin Configuration 1=B 2=E VSO05561 Package 3=C SOT323 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage

DIN 6784

Abstract: MARKING 3FS BC857 st BC846W BC847W BC848W BC849W BC850W BC856BW BC856W
Contextual Info: BC856W.BC860W PNP Silicon AF Transistors • For AF input stages and driver applications 3 • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: 2 BC846W, BC847W, BC848W 1 BC849W, BC850W NPN

Contextual Info: BFR193W NPN Bipolar RF Transistor • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers 3 2 1 • fT = 8 GHz, NFmin = 1 dB at 900 MHz • Pb-free RoHS compliant package • Qualification report according to AEC-Q101 available

BBY66

Abstract: BBY66-05 BBY66-05W BCR108W BCW66 E6327
Contextual Info: BBY66. Silicon Tuning Diodes • High capacitance ratio • High Q hyperabrupt tuning diode • Low series resistance • Designed for low tuning voltage operation for VCO's in mobile communications equipment • Very low capacitance spread BBY66-05 BBY66-05W

A1s sot23

Abstract: BAW56S E6327 MARKING CODE A1s
Contextual Info: BAW56. Silicon Switching Diode • For high-speed switching applications • Common anode configuration BAW56 BAW56T BAW56W BAW56S BAW56U 6 3 4 5 D 3 D 1 D 1 1 D 4 D 2 2 Type BAW56 BAW56S BAW56T BAW56U BAW56W 1 D 2 2 3 Package SOT23 SOT363 SC75 SC74 SOT323

BCR108W

Abstract: BF799W
Contextual Info: BF799W NPN Silicon RF Transistor • For linear broadband amplifier application up to 500 MHz 3 • SAW filter driver in TV tuners 2 1 • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 Type BF799W Marking LKs 1=B Pin Configuration 2=E

Contextual Info: BBY66. Silicon Tuning Diodes • High capacitance ratio • High Q hyperabrupt tuning diode • Low series resistance • Designed for low tuning voltage operation for VCO's in mobile communications equipment • Very low capacitance spread BBY66-05 BBY66-05W

Contextual Info: BFR92W NPN Silicon RF Transistor • For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents 3 2 1 from 0.5 mA to 20 mA • Pb-free RoHS compliant package • Qualification report according to AEC-Q101 available ESD (Electrostatic discharge) sensitive device, observe handling precaution!

AN077

Abstract: BCR108W BFR181W
Contextual Info: BFR181W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA 3 2 1 • fT = 8 GHz, NFmin = 0.9 dB at 900 MHz ESD Electrostatic discharge sensitive device, observe handling precaution! Type

Contextual Info: BFR93AW NPN Silicon RF Transistor • For low distortion amplifiers and oscillators up to 2 GHz at collector currents from 3 2 1 5 mA to 30 mA • Pb-free RoHS compliant package • Qualification report according to AEC-Q101 available ESD (Electrostatic discharge) sensitive device, observe handling precaution!