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    BCXXX TRANSISTOR Search Results

    BCXXX TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    BCXXX TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N5307

    Abstract: CBVK741B019 F63TNR MPSA14 PN2222N
    Text: 2N5307 C TO-92 BE NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		PDF 2N5307 MPSA14 2N5307 CBVK741B019 F63TNR PN2222N

    Untitled

    Abstract: No abstract text available
    Text: BC327, BC327-16, BC327-25, BC327-40 Amplifier Transistors PNP Silicon http://onsemi.com Features • These are Pb−Free Devices* COLLECTOR 1 MAXIMUM RATINGS Symbol Value Unit Collector −Emitter Voltage VCEO −45 Vdc Collector −Emitter Voltage VCES −50


    Original     		PDF BC327, BC327-16, BC327-25, BC327-40 BC327/D

    MPSA12

    Abstract: CBVK741B019 F63TNR MPSA14 PN2222N
    Text: MPSA12 C TO-92 BE NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		PDF MPSA12 MPSA14 MPSA12 CBVK741B019 F63TNR PN2222N

    2N5306

    Abstract: F63TNR MPSA14 PN2222N CBVK741B019
    Text: 2N5306 C TO-92 BE NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		PDF 2N5306 MPSA14 2N5306 F63TNR PN2222N CBVK741B019

    k 3683 transistor

    Abstract: BCxxx TRANSISTOR PN2222N 2N6076 CBVK741B019 F63TNR small signal transistor transistor k 3683 transistor k 0247
    Text: DISCRETE POWER & SIGNAL TECHNOLOGIES 2N6076 SILICON PNP SMALL SIGNAL TRANSISTOR 1 BVCEO . . . . 25 V Min 1 2 3 hFE . . . . 100 (Min) @ VCE = 10 V, IC = 10 mA B C E 2 0.135 - 0.145 (3.429 - 3.683) 3 0.175 - 0.185 (4.450 - 4.700) ABSOLUTE MAXIMUM RATINGS (NOTE 1)


    Original     		PDF 2N6076 k 3683 transistor BCxxx TRANSISTOR PN2222N 2N6076 CBVK741B019 F63TNR small signal transistor transistor k 3683 transistor k 0247

    2N5308

    Abstract: PN2222N TO5 package D9842 F63TNR MPSA14 CBVK741B019 PN222N D74z transistor k 0247
    Text: 2N5308 C TO-92 BE NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		PDF 2N5308 MPSA14 2N5308 PN2222N TO5 package D9842 F63TNR CBVK741B019 PN222N D74z transistor k 0247

    2N3663

    Abstract: CBVK741B019 F63TNR PN2222N PN918
    Text: 2N3663 2N3663 B TO-92 CE NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. See PN918 for characteristics. Absolute Maximum Ratings*


    Original     		PDF 2N3663 PN918 2N3663 CBVK741B019 F63TNR PN2222N

    bc 7-25 pnp

    Abstract: BC327-16 BC327-25 BC327 pin out bc327 pin out diagram bc327 application note bc327-40 BC32716 BC32725 C 32725
    Text: BC327, BC327-16, BC327-25, BC327-40 Amplifier Transistors PNP Silicon http://onsemi.com Features • These are Pb−Free Devices* COLLECTOR 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −45 Vdc Collector −Emitter Voltage


    Original     		PDF BC327, BC327-16, BC327-25, BC327-40 BC327/D bc 7-25 pnp BC327-16 BC327-25 BC327 pin out bc327 pin out diagram bc327 application note BC32716 BC32725 C 32725

    PN2222N

    Abstract: 2N6426 CBVK741B019 F63TNR MPSA14 transistor k 0247
    Text: 2N6426 C TO-92 BE NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		PDF 2N6426 MPSA14 PN2222N 2N6426 CBVK741B019 F63TNR transistor k 0247

    2N5770

    Abstract: No abstract text available
    Text: 2N5770 C TO-92 BE NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. See PN918 for characteristics. Absolute Maximum Ratings* Symbol


    Original     		PDF 2N5770 PN918 2N5770

    2N5769

    Abstract: No abstract text available
    Text: 2N5769 C TO-92 BE NPN Switching Transistor This device is designed for high speed saturated switching applications at currents to 100 mA. Sourced from Process 21. See PN2369A for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		PDF 2N5769 PN2369A 2N5769

    PN2222N

    Abstract: BCxxx TRANSISTOR transistor 2001 H1 PN222N D27Z TAPE AMMO PACK TO92 transistor k 0247 TRANSISTOR W2 CBVK741B019 F63TNR
    Text: TO-92 Tape and Reel Data TO-92 Packaging Configuration: Figure 1.0 TAPE and REEL OPTION FSCINT Label sample See Fig 2.0 for various Reeling Styles FAIRCHILD SEMICONDUCTOR CORPORATION LOT: CBVK741B019 PN2222N NSID: D/C1: HTB:B QTY: 10000 SPEC: D9842 SPEC REV:


    Original     		PDF CBVK741B019 PN2222N D9842 F63TNR PN222N F63TNR 375mm PN2222N BCxxx TRANSISTOR transistor 2001 H1 PN222N D27Z TAPE AMMO PACK TO92 transistor k 0247 TRANSISTOR W2 CBVK741B019

    CBVK741B019

    Abstract: F63TNR MPSA28 MPSA29 PN2222N BCxxx TRANSISTOR
    Text: MPSA29 C TO-92 BE NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 500 mA. Sourced from Process 03. See MPSA28 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		PDF MPSA29 MPSA28 CBVK741B019 F63TNR MPSA29 PN2222N BCxxx TRANSISTOR

    transistor 2001 H1

    Abstract: PN4275 CBVK741B019 F63TNR PN2222N PN2369A
    Text: PN4275 C TO-92 BE NPN Switching Transistor This device is designed for high speed saturated switching applications at currents to 100 mA. Sourced from Process 21. See PN2369A for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		PDF PN4275 PN2369A transistor 2001 H1 PN4275 CBVK741B019 F63TNR PN2222N

    Untitled

    Abstract: No abstract text available
    Text: 2N6426 C TO-92 BE NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		PDF 2N6426 MPSA14

    NZT7053

    Abstract: 2N7052 2N7053 CBVK741B019 F63TNR PN2222N
    Text: 2N7053 2N7052 NZT7053 C E C B C TO-92 C E B TO-226 B SOT-223 E NPN Darlington Transistor This device is designed for applications requiring extremely high gain at collector currents to 1.0 A and high breakdown voltage. Sourced from Process 06. Absolute Maximum Ratings*


    Original     		PDF 2N7053 2N7052 NZT7053 O-226 OT-223 NZT7053 2N7052 2N7053 CBVK741B019 F63TNR PN2222N

    Untitled

    Abstract: No abstract text available
    Text:         :      ; :   " #  ;! -<.$ 4=  / / 3/               °            


    Original     		PDF

    F63TNR

    Abstract: PN2222N BS270 CBVK741B019
    Text: April 1995 BS270 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to


    Original     		PDF BS270 500mA 400mA, F63TNR PN2222N BS270 CBVK741B019

    BCxxx TRANSISTOR

    Abstract: PN2222N transistor k 0247
    Text:         :      ; :   " #  ;! -<.$ 4=  / / 3/               °            


    Original     		PDF CBVK741B019 BCxxx TRANSISTOR PN2222N transistor k 0247

    2N6427

    Abstract: CBVK741B019 F63TNR MMBT6427 MPSA14 PN2222N transistor bel 100
    Text: 2N6427 / MMBT6427 2N6427 MMBT6427 C E C B TO-92 B SOT-23 E Mark: 1V NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics.


    Original     		PDF 2N6427 MMBT6427 2N6427 OT-23 MPSA14 CBVK741B019 F63TNR MMBT6427 PN2222N transistor bel 100

    Untitled

    Abstract: No abstract text available
    Text: April 1995 BS270 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to


    Original     		PDF BS270 500mA 400mA,

    Untitled

    Abstract: No abstract text available
    Text: 2N6427 / MMBT6427 2N6427 MMBT6427 C E C B TO-92 B SOT-23 E Mark: 1V NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics.


    Original     		PDF 2N6427 MMBT6427 2N6427 OT-23 MPSA14

    rf transistor mark code H1

    Abstract: CBVK741B019 F63TNR MMBTH24 MPSH11 MPSH24 PN2222N
    Text: MPSH24 / MMBTH24 MPSH24 MMBTH24 C E C B TO-92 B SOT-23 E Mark: 3A NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 µA to 20 mA range to 300 MHz, and low frequency drift commonbase VHF oscillator applications with high output levels for


    Original     		PDF MPSH24 MMBTH24 MPSH24 OT-23 MPSH11 rf transistor mark code H1 CBVK741B019 F63TNR MMBTH24 MPSH11 PN2222N

    Untitled

    Abstract: No abstract text available
    Text: FPNH10 FPNH10 C TO-92 BE NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency drift, high output UHF oscillators. Sourced from Process 42.


    Original     		PDF FPNH10