BCY70 BS Search Results

BCY70 motorola

Contextual Info: MOTOROLA Order this document by BCY70/D SEMICONDUCTOR TECHNICAL DATA Tran sistors BCY70 PNP Silicon COLLECTOR 3 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage v CEO -4 5 Vdc Collector-Base Voltage v CBO -5 0 Vdc Vdc Emitter-Base Voltage

BCY70

Abstract: BCY72 BCY71 BGY71 transistor bcy70 BCY71A
Contextual Info: BCY70 . . . BCY72 PNP Silicon Epitaxial Planar T ransistors for industrial switching and amplifier applications The BCY71 and BCY71A feature low noise figures. max .0.50 Metal case JEDEC TO-18 18 A 3 according to DIN 41 876 Collector connected to case Weight approximately 0.35 g

BCY85

Abstract: to92c KM9011 bf394 BSY78 BSX51A BSY73 BSY89 BCY70 BCY72
Contextual Info: Low Level and General Purpose Amplifiers TYPE NO. POLA­ CASE Pd RITY IC IC VCEO mW (mA) (V) min fl Cob N.F. IC min max max (MHz) (dB) VCE(sat) HFE MAXIMUM RATINGS max VCE max (mA) (V) (V) (mA) (MHz) BCY70 BCY71 BCY72 BCY78 BCY79 P P P P P TO-18 TO-18 TO-18

2N2102

Abstract: 2N4036 BC141 BC161 BCY65E BCY77 BSV16 ZT211 ZT89
Contextual Info: PNP LOW LEVEL TABLE 2 - PNP SILICON PLANAR LOW LEVEL TRANSISTORS The devices show n in this table are low level transistors designed for small and medium signal, low and medium pow er am plification from D C to radio frequencies in Com mercial, Industrial and M ilitary

BFY50 equivalent

Abstract: 2n2222 texas instruments CV7756 bfy51 equivalent CV7735 BFY52 equivalent equivalent of 2n2222 2N2222 npn small signal current gain 2n2222 equivalent 2n2484 2n2222 ti
Contextual Info: Discrete Semiconductors T exas In s t r u m e n t s Absolute Maximum Rating hFE at Collector Current CV Number Commercial Case Equivalent Outline Polarity VC B VCE V eb hFE V V V hFE Ic Min. fT MHz Converted to BS9300 Small Signal Planar CV continued Comments

bc140

Abstract: BSV16 2N2102 2N4036 BC141 BC161 BCY65E BCY77 ZT211 ZT89
Contextual Info: PNP LOW LEVEL TABLE 2 - PNP SILICON PLANAR LOW LEVEL TRANSISTORS The devices show n in this table are low level transistors designed for small and medium signal, low and medium pow er am plification from D C to radio frequencies in Com mercial, Industrial and M ilitary

BC107 equivalent transistors

Abstract: BC140 equivalent BCY71 BS 2N3053 equivalent marking 1801 2N929 2N930 BAW63 BAW63A BFS36
Contextual Info: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking Nearest metal can or IE-line equivalent B.S. number* Page Type Device

2N2222A zetex

Contextual Info: ZETEX S E M I C O N D U C T O R S IbE D • TTVDSTfl OOObfl4ö ñ ■ ZETB METAL CAN SPECIFICATIONS ~rz°i - Z 3 NPN LOW NOISE Type ZT91 ZT92 BSY55 ZT93 ZT86 ZT88 ZT89 ZT90 ZT95 BCY65E 2N2484 ZT94 ZT83 ZT84 BCY59 BCY56 2N930 2N2219A 2N2222A ZT81 ZT82 BCY58

2N2102

Abstract: 2N4036 BC141 BC161 BCY65E BCY77 BSV16 ZT211 ZT89
Contextual Info: PNP LOW LEVEL TABLE 2 - PNP SILICON PLANAR LOW LEVEL TRANSISTORS The devices sh ow n in this table are low level transistors designed for small and medium signal, low and medium power amplification from D C to radio frequencies in Commercial, Industrial and Military

BCY72 MOTOROLA

Abstract: 2N4405 N4026 BC178 BC179 transistor 2N4033 2N2906 2N2906A N3963 2N3799
Contextual Info: METAL SMALL-SIGNAL TRANSISTORS continued General-Purpose Amplifiers (continued) Package v (BR)CEO Volts Min fT MHz Min 2 N 3963 2N4026 2N4029 2N3799 2N2906A# 2N2907Af 2N3964 BC177 80 80 80 60 60 60 45 45 BCY79 @ i •c lc mA mA Max Min 40 100 150 30 200

BF441

Abstract: BF440 224AA G-T40N KT361 A5T3906 BFW90 LOW-POWER SILICON PNP 75n80 2N601
Contextual Info: RF LOW-POWER SILICON PNP Item Number Part Number V BR CEO 5 10 2N3905 2N5382 BC126A BC126A BC126A BSX36 PH2907R SOR2907 (A) HSE402 MMBT4403 MMBT440~ 15 20 25 30 MMBT4403 A5T4403 2N4403 SF106 P2N2907 MPS6517 TMPT2907 TMPT4403 A5T3905 SF222 SF322 2N4143 B5W75

BC107

Abstract: 2N1131 2N1132 2N3053 2N4037 2N696 2N697 BC177 BCY59 BCY79
Contextual Info: NPN LOW LEVEL 2N3053 Max VcE sat at V ceO U 'C: < Type o< CD Max V mA V mA mA 60 40 700 1.4 150 15 2N696 60 40 2N697 60 40 BFY51 60 30 !c Ib h FE Min. Max. 50 250 at Continued Min f T at Pto, at Tamb Package Comple­ ment = 25°C lc !c mW mA MHz mA 150 100

2N2102

Abstract: 2N4036 BC141 BC161 BCY65E BCY77 BSV16 ZT211 ZT89 bc107
Contextual Info: PNP LOW LEVEL TABLE 2 - PNP SILICON PLANAR LOW LEVEL TRANSISTORS The devices shown in this table are low level transistors designed for small and medium signal, low and medium power amplification from DC to radio frequencies in Commercial, Industrial and Military

Contextual Info: SbE D • T cJ70S7fl OOObTTfc. 57=} ■ ZETB ' T /2.'7-0 | PNP LOW LEVEL ZETEX SEMICONDUCTORS TABLE 2 - PNP SILICON PLANAR LOW LEVEL TRA N SISTO RS The devices show n in this table are low level transistors designed for small and medium signal, low and medium power amplification from D C to radio frequencies in Commercial, Industrial and Military

2N4033

Abstract: 2001 PNP TO-92 TO-92 2001 MPSA642 BSV12
Contextual Info: Philips Semiconductors Concise Catalogue 1996 SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Small-signal transistors SWITCHING TRANSISTORS CONTINUED LEADED TYPES ratings characteristics type V CEO 'c P.O, hFE number max. max. (mW) min./max.

2N3055

Abstract: 2N3055H BDY25C bu103a 2n2243 transistor U3158 transistor BUX22 bu102 TRANSISTOR BSW68A Transistor BFX79
Contextual Info: Illl iF ti mi Semelab Mil / Aerospace Division NATO LISTED TRANSISTO R PRO D UCT Semelab is listed and supplies transistors for use in NATO military systems. Semelab’s CAGE number is U3158. Below is a SELECTION from the 740 device types listed. NATO NUMBER

BSX21

Contextual Info: Small Signal Transistors TO-18 Case Continued TYPE NO. DESCRIPTION BVCBO BVCEO bvebo !CBO Ct VCBO (V) (V) (V) (HA) MIN MW MM MAX 'ICES *'ICEV h RE @ lc (mA) (V) MIN 0 VCE VCE(S/V T )0 » c Cob (V) MAX 00 (mA) MAX fr NF ton toff <PF) (MHZ) (dB) (ns) (ns)

2N1131

Abstract: 2N1132 2N3053 2N4037 2N696 2N697 BC107 BC177 BCY59 BCY79
Contextual Info: NPN LOW LEVEL < Type o< CD Max 2N3053 60 V ceO U 'C: V mA V mA mA 40 700 1.4 150 15 !c Ib Min f T at h FE at Min. Max. 50 250 Pto, at Tamb Package Comple­ ment = 25°C lc !c mW mA MHz mA 150 100 50 1000 TO-39 2N4037 50 600 TO-39 2N1131 2N1132 150 15 20 60

BC187

Abstract: AMPL BSV68 BSX19 equivalent 2N5183 2N6430 2N6431 2N6432 2N6433 BC110
Contextual Info: Small Signal Transistors TO-18 Case Continued TYPE NO. DESCRIPTION BVCBO BVCEO BVEBO ICBO @ µA) (V) (V) (V) (µ MIN MIN MIN VCB (V) MAX hFE MIN @ IC @ VCE VCE (SAT) @ IC (mA) (V) (V) (mA) MAX MAX COB fT NF (pF) (MHz) (dB) ton (ns) toff (ns) MAX MAX MAX

2N6432

Abstract: 2N5183 2N6430 2N6431 2N6433 BC110 BC393 BC394 BC477 BCX22
Contextual Info: Small Signal Transistors TO-18 Case Continued TYPE NO. DESCRIPTION 2NS183 NPN AMPUSW ITCH 2N6430 NPN HIGH VOLTAGE 2N6431 NPN HIGH VOLTAGE BVCBO BVCEO bvebo ICBO (V) on (V) (HA) MIN MIN MIN MAX *ICES *ICEV 18 18 7.0 0.5 200 200 6.0 300 300 6.0 @ lc h FE

2N2222 hfe

Abstract: 2N2222 chip ztx313 BCY71 2N2218 2N2219 2N2221 2N2222 2N2904 2N2906
Contextual Info: NPN SWITCHING M ax VCE sat| at Max Type V CEO Continued f T Min at h FE at P acksQ S 'c •c •b Min Max •c ton 'c . mA MHz mA ns mA mA 0.35 150 15 40 150 50 150 15 40 0.4 150 15 100 800 0.4 150 15 40 120 30 800 0.4 150 15 100 ZT80 25 500 0 .2 10 2 38 ZT87

2n2222a SOT23

Abstract: 2n3906 sot23 2N3904 sot323 BC557 SOT23 2n2222a SOT223 2n2222 sot323 bd139 sot23 2n3904 sot23 philips bc107 sot23 2N5551 SOT23
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET Conversion list Small-signal transistors Product specification File under Discrete Semiconductors, SC04 1997 Aug 06 Philips Semiconductors Product specification Small-signal transistors Conversion list SC04/CATEGORY CROSS REFERENCE PER PACKAGE

EN930

Abstract: BCY70 BCY71 BCY72 BCY78 BCY79 BCY85 BCY86 BF394 BFW22
Contextual Info: Low Level and General Purpose Amplifiers TYPE NO. POLA­ CASE RITY fl Cob N.F. IC VCE max IC min max max mA (V) (V) (mA) (MHz) (MHz) (dB) VCE(sat) HFE MAXIMUM RATINGS Pd IC VCEO (mW) (mA) (V) min max P P P P P TO-18 TO-18 TO-18 TO-18 TO-18 300 350 350 350

2n5183

Abstract: BSV68 2N6432 2N6430 2N6431 2N6433 BC110 BC393 BC394 BC477
Contextual Info: Small Signal Transistors TO-18 Case Continued D E S C R IP T IO N T Y P E NO. (V) 2N5183 NPN AMPUSWITCH (V) (V) <|lA) MIN M IN M IN MAX •IC E S *IC E V 18 18 7.0 0.5 le hFE BVCBO BVCEO BVEBO C BO @ VCBO (mA) (V) 12 M IN MAX 75 400 @ V C E V C E (S A T ) 1C C o b