BH53T31 Search Results

mpsa13 636

Contextual Info: N AUER PHILIPS/DISCRETE bTE D • bh53T31 QQ26Q13 flTfl H A P X MPSA13 MPSA14 SILICON PLANAR EPITAXIAL DARLINGTON TRANSISTORS N-P-N silicon planar epitaxial darlington transistors in plastic TO-92 envelope for general purpose applications. QUICK REFERENCE DATA

Contextual Info: itra 3 i m DISCRETE SEMICONDUCTORS PBYR30100PT series Schottky Barrier rectifier diodes Product specification File under Discrete Semiconductors, SC02 August 1992 Philips Sem iconductors PHILIPS bh53T31 00330DM 137 S e m ico n d uctor* P roduct » p e clflca tlo n

Contextual Info: N AMER PHILIPS/DISCRETE 25E D •I bh53T31 0022405 4 ■ BYQ28F SERIES T - O'S-J'7 ULTRA FAST-RECOVERY ELECTRICALLY-ISOLATED DOUBLE RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial double rectifier diodes in SOT-186 full-pack plastic envelopes, featuring low forward voltage drop, very fast reverse recovery times and soft-recovery

Contextual Info: SSE D • bh53T31 002S2fll 1 ■ I N AMER PH IL IPS /DISCR ETE J BR220 SERIES V 1 ^ -2 S '- o s ' DUAL BREAKOVER DIODES The BR220 is a range of monolithic diffusion-isolated glass-passivated dual bidirectional breakover diodes in the TO-220AB outline, available in a +/— 12% tolerance series o f nominal breakover voltage.

Contextual Info: bti53T31 00 32 3 3 1 Philips Semiconductors T10 APX ^^^Preliminai^specificatlon Hybrid CATV amplifier module BGD885 — N A1ER PHILIPS/DISCRETE PINNING -SOT11SD FEATURES PIN CONFIGURATION DESCRIPTION PIN • Excellent linearity • Extremely low noise 1 input

pir 500b

Contextual Info: N AtlER PHILIPS/DISCRETE E5E D • fafa53*131 Q020b6Q 5 PowerMOS transistor Fast Recovery Diode FET BUK637-500A BUK637-500B BUK637-500C GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope.

Contextual Info: N AUER PHILIPS/DISCRETE 86D 01398 ObE D • bbS3T31 D013b3b 0 ” d _JL BLV98 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor in SOT-171 envelope intended fo r use in class-B operated base station transmitters in the 900 MHz communications band.

Contextual Info: bbSBTBl ' O D i m n Q • 2SE D N AMER PHILIPS/DISCRETE J I BD244; BD244A \ B D 2 4 4 B ; BD244C r - 3 5 - 2 S IL IC O N E P IT A X IA L B A S E P O W E R T R A N S IS T O R S P-N-P silicon transistors in a plastic envelope intended for use in general amplifier and switching

BUP22C

Abstract: BUP22 BUP22B
Contextual Info: 11 N AMER PHILIPS/DISCR ETE 2SE D • bfa53*ï31 OOlflb? b ■ BUP22 SERIES „ T~ - g g - /3 SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in a SOT93 envelope, intended for use in converters, inverters, switching regulators, motor control systems etc.

BDX67

Abstract: transistor bdx67 BDX66B BDX66A BDX66 BDX67B BDX66B TRANSISTOR BDX66 darlington power transistor 10a BDX66A BDX66B BDX66C
Contextual Info: N AMER PHILIPS/DISCRETE 25E D • bt.53^31 D G l T n ? 7 ■ BDX67; 67A BDX67B; 67C T-33-H7 SILICON DARLINGTON POWER TRANSISTORS N-P-N epitaxial base transistors in monolithic Darlington circuit for aûdio output stages and general amplifier and switching applications; TO-3 envelope. P-N-P complements are BDX66, BDX66A,

BUS22

Abstract: BUS22B BUS22C
Contextual Info: N AMER PHILIPS/DISCRETE BSE D • ^53*131 G01Ô743 4 ■ BU S22 SER IE S r - 3 3 ~ J 3 SILICO N DIFFUSED PO W ER T R A N S IS T O R S High-voltage, high-speed, glass-passivated npn power transistors in a TO -3 envelope, intended for use in converters, inverters, switching regulators, m otor control systems etc.

OM335

Abstract: philips hybrid uhf vhf amplifier HYBRID V.H.F./U.H.F. WIDE-BAND AMPLIFIER vim 838 DIN45004 jr42 booster-amplifiers
Contextual Info: L f N AMER PHI LI PS /DIS CR ETE SSE D • A 1^53=131 G01fii407 T ■ OM 335 HYBRID V H F /U H F WIDE-BAND AMPLIFIER Three-stage wide-band amplifier in the hybrid technique, designed for use in mast-head booster-am plifiers, as pre-am plifier in MATV system s, and as general-purpose ampli­

M1518

Abstract: M1517 BYW30-50 BYW30-50U 420 0317 m1521 BYW30 C12850
Contextual Info: I I 25E D N AMER P H I L I P S / D I S C R E T E H abSBTBl 005275=1 h • BYW30 SE R IE S Jl 7^ 03-/7 ULTRA FAST RECOVERY RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial rectifier diodes in DO-4 metal envelopes, featuring low forward voltage drop, ultra fast reverse recovery times, very low stored charge and soft recovery

Contextual Info: N AMER PHILIPS/DISCRETE tab53T31 OOSDESO S • BSE D BUK426-200A BUK426-200B PowerMOS transistor T - 3 7- I/ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full pack envelope. The device is intended for use in Switched Mode Power Supplies

sy 171

Abstract: diode sy 171 BUZ76 T0220AB
Contextual Info: BUZ76 PftwprMOS transistor N AUER PHILIPS/DISCRETE OLE D • bbSBTBl 0D14M7T H m ~ T - ^ - U May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

bc 184 transistor

Abstract: BC857AR transistors 3Kr transistors marking HJ BC856AR 3AR 3ER 3FR on TRANSISTOR BC 187 TRANSISTOR BC 187 BC856 BC857
Contextual Info: 1 N AMER PHILIPS/DISCRETE ^53*131 G015537 Ö OLE D BC856 BC857 BC858 T ' W - i S ' SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors, in a SOT-23 plastic envelope for use in driver and output stages of audio amplifiers in thick and thin-film circuits.