BUX46 Search Results

BUX46

Abstract: BUX46A N13e
Contextual Info: N AMER PHILIPS/DISCRETE 2SE » bbS3' i o a n o M s 7 i BUX46BUX46A T-33-J3 SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in a TO -3 envelope, intended fo r use in converters, inverters, switching regulators, m otor control systems etc.

but46a

Abstract: PEC730
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 20 25 -30 2SC251SM 2SC2535 2SC2535 2SC3570 STI401 STI413 IR413 BU129 BUT11 SPT3439 BUT11F BUT11F 2SC2518L MJ425 MJ425 MJ425 BUT46 BU120 ~~6~~1SK 35 40 2S09S7 PMS5K425 SOT1015 BUS11A BUT11A BUW11AF BUX46A

Contextual Info: CRIMSON SEM ICO ND UC TO R INC TT ^2514096 CRIMSON SEMIC O N D U C T O R INC J 99D 00339 D dF | ESmOTb . . I P Cf h ~ 0 / M U LTIEPITAXIAL H.V. M E S A AND B IP L A N A R '- TO-3 continued V«o Vcio (V) (V) NPN BUW44 BUW45 BUW46 BUX13 BUX14 BUX43 BUX44 BUX46

Contextual Info: N AMER PHILIPS/DISCRETE 25E D b b S B ' m 001=1045 7 I BUX46BUX46A T - 3 3 - f 3 SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in a TO-3 envelope, intended for us in converters, inverters, switching regulators, motor control systems etc.

Contextual Info: BUX46 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)

BUX46

Contextual Info: BUX46 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)

BUX69

Abstract: BUX23 BUX37 BUX55 BUX25 BUX80 BUX24 BUX26 BUX27 BUX28
Contextual Info: 0133107 DDDDMSb T17 • SMLB MAE D SEMELABI SEMELAB BUX23 BUX24 BUX25 BUX26 BUX27 BUX28 BUX29 BUX34 BUX348 BUX348A BUX348APF BUX348CPF BUX348PF BUX37 BUX39 BUX40 BUX41 BUX41N BUX42 BUX43 BUX44 BUX45 BUX46 BUX47 BUX47A BUX48 BUX48A BUX49 BUX50 BUX51 BUX52 BUX53

Contextual Info: BUX46 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)

BUX46

Abstract: BUX46A
Contextual Info: N AMER PHILIPS/DISCRETE 2SE D bb53' 1 OOnOHS 7 I BUX46 BUX46A T - 3 3 - J 3 SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in a TO-3 envelope, intended for use in converters, inverters, switching regulators, motor control systems etc.

2N3583

Abstract: 2N4296 2N4297 2N4298 2N4299 2N5427 2N5428 2N5429 2N5430
Contextual Info: 1 1 0 J)L T R A N S I S T O R - CO • w - r w j ^ U I O D E ^ I H IN C A N S I A 4D S T O R C O D | 5646352 0D D D 13E 2 I M G - . . 8 4 P 1 3 2 D T > 3 2 » 0 5 ~ D1QDE TR^f\l515TQR CGJfUC. 201) 686-0400 • Telex: 139-385 • Outside NY & NJ area call TOLL FREE 800-526-4561

BUV48I

Abstract: BUV48AF1 BUV48F1 SGS V48A BUV48FI bux48a equivalent SGS V48A WITH CIRCUIT DIAGRAM bux48 equivalent I v48a BUX47
Contextual Info: 7# SCS-THOMSON BUX47/V47/V47FI BUX47A/V47A/47AFI HIGH VOLTAGE POWER SWITCH ESCRIPTION he BUX47/A, BUV47/A, BUV47F1/AFI are silicon mltiepitaxial mesa NPN transistors mounted resoctively in TO-3 metal case, TO-218 piastic ackage and ÎSOWATT218 fully isolated package,

NPN 350W

Abstract: TO276AB TO276AA BUX53 NTC1330-12.8MHZ 8MHZ BUX41N
Contextual Info: Search Results Part number search for devices beginning "BUW75" Datasheets are downloaded as Acrobat PDF files. Semelab Home Bipolar Products PRODUCT Polarity Package VCEO IC cont HFE(min) HFE(max) @ VCE/IC FT PD BUW75 NPN TO3 300V 12A 10 - 1.5/5 10MHz 120W

15j03

Abstract: 40328 npn darlington 400v 15a pnp 400v 10a 2N4296 BU326S 2N3583 2N3584 2N4297 2N4298
Contextual Info: K CO INC ¿ A4D D g 2 Û 4 A 3 S E Od U i Q D j g ~j K A Ñ ¿ I S T f t R TKir*. ,S 4 D 00 13* 0DD013E B D T .2 V Q C Ì DIODE TRál\l5J5TQR CO. INC. 201 686-0400 • Telex; 139-385 • Outside NY & NJ area call TO LL FR E E 800-526-4561 FAX No. 201-575-5863

transistor f6 13003

Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
Contextual Info: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.

811600

Abstract: BDX10 2N3055C BUW46 2N3055H BUX80 BUW44 BUW45 BUX13 BUX14
Contextual Info: C R I MS O N S E MI CONDUC TOR I N C TT t-_ . _ ~ -— -— - -2 5 1 4 0 9 6 C R I M S O N S E M I C O N D U C T O R IN C I 99D 00339 O D lf| E S I M Q U v 7" 6t>-Q/ M U L T IE P IT A X IA L H.V. M E S A A N D B IP L A N A R '- T O -3 continued

transistor 350-100

Abstract: 40328 BU326S npn darlington 400v 15a 2N3583 2N4296 2N4297 2N4298 2N4299 2N5427
Contextual Info: 1 1 0 1>L T K A N X I S T O R — w ~r U o - ¡7 7 t CO INC w 34D » 1 Zfl4fl3SS 0GD0132 B «ifci - . , . i 1 j l , 3 3 - 0 9 DIODE TRd \J515T0R CD. INC. (201) 686-0400 • Telex; 139-385 • Outside NY & NJ area call TO LL FR E E 800-526-4561 FAX No. 201-575-5863

SOT423

Abstract: STI665 2S0869 TO247 package PT9795 OTS403 2S01397 trw rf
Contextual Info: POWER SILICON NPN Item Number Part Number I C 10 - ~t~g~ 15 20 SOT403 SOT403 STS409 OTS3705B OTS423 OTS663 IR663 SOT423 ~';'~:i3 25 30 SPC423M SPC425 STS423 2SC1875 2SC1170 2SC1893 2SC1170B 2SC1170B gt~~~ 35 40 OTS665 IR665 PTC424 PTC424P (A) PTC425 PTC425P (A)

2sb504

Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle

Diode 400V 5A

Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
Contextual Info: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM

JE350

Abstract: je180 MJ13004 TP33C BD325 JE172 BDX48 JE340 bd160 BUT55
Contextual Info: INDUSTRY STANDARD SGS-THOMSON BD135 BD136 BD137 BD138 BD139 BD135 BD136 BD137 BD138 BD139 BD140 BD142 BD144 BD157 BD158 BD140 BD159 BD160 BD165 BD166 BD167 BD159 SGS-THOMSON PAGE NEAREST BD157 BD158 2N5878 BD437 BD438 BD439 BD440 BD441 BD442 BD237 BD238 BD168

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

Contextual Info: lc / V „ A/V Ml8 vV et ’ I c 'l . m a t <V) (A /m A ) P . <W) If et M U L T I E P I T A X IA L H V. M E S A A N D B I P L A N A R '- T O -3 (co n tin u e d » 500 400 15 800 400 15 900 450 15 175 6 7 6 /1 .5 3.0 10/20 00 175 7/1.5 1.5 10/20 00 175 7

2sC2285

Abstract: Digitron 12 nec sdt411 IR665 DTS423 trw rf transistors 2SC3480 DTS-423
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max V BR CEO (A) Of) hFE fT ICBO Max Max k)N Max ON) Min (Hz) (A) (s) PD r (CE)ut Max (Ohms) Toper Max Package Style re) Devices 20 Watts or More, (Cont'd) 5 10 PTC411P(A) SDT411 SDT411

SSY20

Abstract: SF828 VEB mikroelektronik funkamateur BUX 127 SF126 SF 127 SF128 SF826 SF 829 B
Contextual Info: FUNKAMATEUR-Bauelementeinformation DDR-SiliziumTransistoren Typenübersicht Si-Transistoren des VEB Kombinat Mikroelektronik Grenzdaten Zonen­ Vorzugs­ anwendungen2 folge P,o, [mW, W ] Typ1 Kenndaten UcBO U ceO T • T * 1C , ACsat [V] [V] [mA, (A)] fiT3