DEC11 Search Results

Contextual Info: B D REVISIONS SYM ZONE -S 3 - .6 2 0 .5 4 4 [1 5 .7 5 ] [1 3 .8 3 ] 105 .7 2 2 [1 8 .3 4 ] [2 .6 7 ] TYP. 4 ECN, ERN NO. DATE APPRD. /A B PROPOSAL PROPOSAL 0 6 /0 1 /1 1 L CHAN JAN 18,07 L CHAN C PROPOSAL APR 9 ,0 9 L.CHAN DEC11 /1 2 L.CHAN ADDING KEEP-OUT ZONE

Contextual Info: 4 T H IS D R A W IN G IS 3 U N P U B L IS H E D . RELEASED FOR ALL 2 P U B L IC A T IO N R IG H T S LOC D IS T RESERVED. REVISIONS 50 AF D E S C R IP T IO N R EVISED PER E C R - 1 1-01 8063 2 1 DEC11 DWN APVD KH PD D D 23.24 -[.9 15] MAX CONTINUOUS STRIP ON

Contextual Info: R E V IS IO N S SYM ERN NO. PROPOSAL DWG 4 .60 0 [1 5 .2 5 ] ECN, ZO NE .810 [2 0 .5 7 ] APPRD. DATE DEC11/08 L.CHAN .415 [1 0 .5 5 ] FRONT VIEW SIDE VIEW .10 0 [2 .5 4 ] TYP. .05 0 [1 .2 7 ] TYP. 0,O35±.OO2 [0O .89±O .O 5] HOLES 10 REQ’ D r .100 [2 .5 4 ]

Contextual Info: HEDFM103G . HEDFM107G 1.0 Amp. Miniature Glass Passivated Ultrafast Bridge Rectifier DFM Current 1.0 A Voltage 200 V to 1000 V FEATURES • Ultrafast reverse recovery time for high frequency • Ideal for automated insertion • High forward surge current capability

Transistor BFR 90

Abstract: F1510 Q62702-F1510 Transistor BFR 900mhz 193W
Contextual Info: BFR 193W NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fT = 8GHz F = 1.3dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code

BFR106

Abstract: Q62702-F1219 GMA marking Transistor BFR 80 BFr pnp transistor
Contextual Info: BFR 106 NPN Silicon RF Transistor • For low noise, high-gain amplifiers • For linear broadband amplifiers • Special application: antenna amplifiers • Complementary type: BFR 194 PNP ESD: Electrostatic discharge sensitive device, observe handling precaution!

80846

Abstract: 022241 gummel
Contextual Info: BFP 81 NPN Silicon RF Transistor • For low-noise amplifiers up to 2GHz at collector currents from 0.5 mA to 20 mA. ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFP 81 SOT-143

Contextual Info: FS2JI.FS2MI 3.0 Amp. Surface Mount Glass Passivated Rectifier DO-214AA / SMB Current 3.0 A Voltage 600 V to 1000 V R FEATURES • Low profile package • Ideal for automated placement • Low power losses, high efficiency • High surge current capability

Contextual Info: HEDFM103G . HEDFM107G 1.0 Amp. Miniature Glass Passivated Ultrafast Bridge Rectifier Current 1.0 A Voltage 200 V to 1000 V DFM FEATURES • Ultrafast reverse recovery time for high frequency • Ideal for automated insertion • High forward surge current capability

Q62702-F1494

Contextual Info: BFR 280W NPN Silicon RF Transistor • For low noise, low-power amplifiers in mobile communication systems pager, cordless telephone at collector currents from 0.2mA to 8mA • fT = 7.5GHz F = 1.5dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution!

Q62702-F1490

Contextual Info: BFR 180W NPN Silicon RF Transistor • For low-power amplifiers in mobile communication systems pager at collector currents from 0.2mA to 2.5mA • fT = 7GHz F = 2.1dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: m i c r o e l e c t r o n i c s group Preliminary Data Sheet December 1997 Lucent Technologies Bell Labs Innovations TEC03264 32-Channel Echo Canceler Features Applications Overall Device • Digital terrestrial communication networks ■ Dual-convergence voice band echo canceler

Contextual Info: FUS1A.FUS1M 1.5 Amp. Surface Mount Glass Passivated Ultrafast Recovery Rectifier Current 1.5 A at 55ºC Voltage 50 to 1000 V R DO-214AC / SMA FEATURES • Low profile package • Ideal for automated placement • Ultrafast recovery time for high efficiency

Contextual Info: HEDFS103G . HEDFS107G 1.0 Amp. Miniature Glass Passivated Ultrafast Surface Mount Bridge Rectifier DFS Current 1.0 A Voltage 200 V to 1000 V FEATURES • Ultrafast reverse recovery time for high frequency • Ideal for automated placement • High forward surge current capability

BC846W

Abstract: BC847W BC848W BC849W BC850W BC856AW BC856BW BC856W BC857AW BC860W
Contextual Info: BC856W.BC860W PNP Silicon AF Transistors
For AF input stages and driver applications 3
High current gain
Low collector-emitter saturation voltage
Low noise between 30 Hz and 15 kHz
Complementary types: 2 BC846W, BC847W, BC848W 1 BC849W, BC850W NPN

5252 F

Abstract: "5252 F" THR15 H-38-9 SVTD "switching office" svts 052 Motorola 0X69 TEC032642 ATM H008
Contextual Info: Data Sheet August 1999 microelectronics group Lucent Technologies Bell Labs Innovations TEC03264 32-Channel Echo Canceller Features Applications Overall Device • ■ ■ ■ ■ Dual-convergence voiceband echo canceller EC . ■ 32 independent and individually controlled echo

P4C1024

Contextual Info: P4C1024 HIGH SPEED 128K x 8 DUAL CHIP ENABLE CMOS STATIC RAM FEATURES High Speed Equal Access and Cycle Times — 15/20/25/35 ns (Commercial/Industrial) — 20/25/35/45/55/70/85/100/120 ns (Military) Single 5 Volts ±10% Power Supply Easy Memory Expansion Using CE1, CE2 and OE

sr206 diode

Abstract: diode Sr 206 SR210
Contextual Info: SR202 - SR215 2.0 Amp. Schottky Barrier Rectifier Current 2.0 A Voltage 20 V to 150 V DO-204AC / DO-15 FEATURES • Low power losses, high efficiency • High surge current capability • High frequency operation • Guarding for overvoltage protection • Low forward voltage drop

Contextual Info: DF-S 1.0 Amp. Miniature Glass Passivated Single-Phase Surface Mount Bridge Rectifier Current 1.0 Amp. at 40ºC Voltage 600 V to 1000 V DFS FEATURES • Ideal for automated placement • High forward surge current capability • Solder dip 260ºC, 10s • Component in accordance to RoHS 2002/95/EC

Contextual Info: DF-SA 1.0 Amp. Miniature Glass Passivated Single-Phase Surface Mount Bridge Rectifier Current 1.0 Amp. at 40ºC Voltage 600 V to 1000 V DFS FEATURES • Ideal for automated placement • High forward surge current capability • Solder dip 260ºC, 10s • Component in accordance to RoHS 2002/95/EC

BC8488

Abstract: H12E BC848 equivalent 1bs sot323
Contextual Info: BC846W.BC850W NPN Silicon AF Transistors
For AF input stages and driver applications 3
High current gain
Low collector-emitter saturation voltage
Low noise between 30 Hz and 15 kHz
Complementary types: 2 BC856W, BC857W, BC858W 1 BC859W, BC860W PNP

Contextual Info: WM8234 w 140MSPS 6-Channel AFE with Sensor Timing Generation and LVDS/CMOS Data Output DESCRIPTION FEATURES The WM8234 is a 16-bit analogue front end/digitiser IC which processes and digitises the analogue output signals from CCD sensors or Contact Image Sensors CIS at pixel

Contextual Info: WM8233 w 210MSPS 6-Channel AFE with Sensor Timing Generation and LVDS/CMOS Data Output DESCRIPTION FEATURES The WM8233 is a 16-bit analogue front end/digitiser IC which processes and digitises the analogue output signals from CCD sensors or Contact Image Sensors CIS at pixel

AK8111

Abstract: FCXO-05
Contextual Info: AKD8141 ＆ AK811x ver.2 AK8141&AK811x評価ボード AKD8141_811x AK811x 評価用 概要 AKD8141_8111x評価ボードはAK8141及び AK8111x製品共通の評価ボードです。 オーダリングガイド  AKD8141_811x_ver.2 ◆ 対象製品 1 AK8141