EG&G ELECTRO OPTICS Search Results

HY-3189

Abstract: 2000C electrical egg date sheet thyratron tube operation thyratron tube thyratron SCHEMATIC 5kv pulse driver thyratron egg
Contextual Info: n JEG G ELECTRO-OPTICS DIVISION * EG&G ELECTRO-OPTICS DIVISION Tel 508 745-3200 or toll-free (800)950-3441 * USA * SALEM, MA 01970 35 CONGRESS STREET Fax (508)745-1451 Electronic Switch Department HY-3189 March 15, 1995 (Notes 15 & 16) TRIGGERING REQUIREMENTS

gaseous lasers

Abstract: C86083E C86093E 910nm laser rca rca 019 1200cu general electric laser 910nm
Contextual Info: E G 8. G/CANADA/OPTOELEK Electro Optics 5TE ì> m 3030blD 0D0D2b0 2 • CANA T 1 ¥ /~ O S ^ C86093E 910 nm Quantum Well Pulsed Laser DATA SHEET Coaxial Stud Package m 1r 1 The C86093E is a high power single element pulsed laser diode operating in the 900to 920 nm wavelength band. Using

SIECOR Fiber Optic cable

Abstract: siecor C30617E EG*G Optoelectronics Siecor 62.5 C30986E C86081E-13 C86081E-14 1300 nm LEDs SIECOR Fiber Optics
Contextual Info: E fi 8. G / C A N A D A / O P T O E L E K 4?E T> 3030bl0 OODOET? 3 I CANA t-fl-O l OPTOELECTRONICS C86081E Series Our 100% quality screening tests include a stabilization bake at 85°C for a minimum of 10 hours, burn-in and thermal shock: 5 cycles, -20 to +70°C.

SIECOR Fiber Optic cable

Abstract: EG*G Optoelectronics 2sa 1300 equivalent c30617e Siecor C860XXE-12 C30654 C30617 Siecor 62.5 SIECOR Fiber Optics
Contextual Info: E G & 6 /CANADA/ OPTOELEK 47E » • 303DblG 00002=13 h ■ E O S iG CANA C86075E & OPTOELECTRONICS C86082E Series T - v t - e i C86082E Series C86075E Series HI“ - Dual-in-Line Package with Single or

tic 1060

Contextual Info: E G & G/C ANADA/OPTOELEK ID 303Qb]>a DOOGIGI 7^3 « C A N A Photodiode i t e i C30807, C30808, C30809 Optics E ,e c t n o l C30810, C30822, C30831 DATA SHEET V l ’ S " 3 N-Type Silicon p-i-n Photodetectors L-571 C30810 1-568 C30807 C30831 C30808 C30809,

SIECOR Fiber Optic cable

Abstract: Siecor 62.5
Contextual Info: E G & G/CANADA/OPTOELEK ^ *4?E I> • 3G3GblD 00002=17 EB kO OPTOELECTRONICS C86081E Series I ■ H The EG&G series of 1300 nm LEDs are edge emitting InGaAsP diodes made by vapor phase epitaxy to give high optical power at 65°C. The design utilizes advanced geometries to prevent

SIECOR Fiber Optic cable

Contextual Info: E G & G/CANADA/OPTOELEK ^ M7E D • 3ü3DblG OGDOE^ EGzG OPTOELECTRONICS h ■ CANA C86075E& C86082E Series - n v / ' O i C86082E Series C86075E Series The EG&G series of 1300 nm LEDs are edge emitting InGaAsP

quadrant photodiode rca

Contextual Info: E 6 & 6/CANAD A/O PTOELEK ID 303Dbl0 GDQ0143 IME « C A N A D ÆM Electro n • I v i I Photodiode C30927E DATA SHEET Optics % Quadrant Silicon Avalanche Photodiodes for Tracking Applications Optical Characteristics Full Angle for Totally illuminated Photosensitive S u r fa c e .

Contextual Info: E G 8t G / C A N A D A / O P T O E L E K It C il 1ÜE D • 3G3GblO □□□□□S3 T *CANA Infrared Emitters Electro Optics Eiectrooptics and Devices S86017E, S86018E S86020E, S86021E S86017E S86018E o High-Speed Gallium Aluminum Arsenide IR-Emitters for Continuous

EG*G Optoelectronics

Abstract: C30642 eg and g laser diode C30641 indium gallium arsenide phosphide Indium Gallium Arsenide Phosphide lasers C30618 C30619 C86091E
Contextual Info: Il E G & G/CANADA/OPTOELEK •_ 47E D ■ □□□□Pflfl 2 ■ CANA 3030bl0 1550nm High Power Pulsed Laser I-» OPTOELECTRONICS C86091E -r-H h O S ■ ■ ■ ■ ■ The C 86091E is a high pow er single elem ent pulsed laser diode. W avelength is centered at 1550 nm to take advantage

Contextual Info: E G & G/ CANADA/OPTO ELE K ItC il IO D • 3D3DblD GOOOOflb bS7 W C A N A ^ Planar PIN InGaAs Photodiodes C30616, C30637, C30617 DATA SHEET Electro Optics ■ S pectral resp o n se ran g e 1100 to 1700 n m ■ H igh responsivity ■ Low capacitance ■ Fast resp o n se tim e

RCA c30808

Abstract: TAG60 3G30 L568 C30822 photodiode C30807 C30809 C30810 d28j 35XL
Contextual Info: E G & G/CANADA/OPTOELEK 3G30blQ ID □□□□!□! 7T3 ICANA Photodiode I t C J C30807, C30808, C30809 C30810, C30822, C30831 Optics E le c ,r o l DATA SHEET ' V f'S T 3 N-Type Silicon p-i-n Photodetectors Broad Range of Photo­ sensitive Surface Areas 0.2 mm2 to 100 mm2

C30817

Abstract: s915 C30872 C30954E C30955E tic 1060 C30956E s914 C30916E 92LS-S916
Contextual Info: £ n G & G/CANADA/OPTOELEK e / ID » l Electro Optics 3 D 3 D b lO O O O O IH ^ bbO ICANA 'T '- y / '- S V Photodiode C30954E, C30955E, C30956E DATA SHEET Large Area Long Wavelength Enhanced Silicon Avalanche Photodiodes for General-Purpose Applications • High Quantum Efficiency —

C30902E

Abstract: C30904E avalanche photodiodes C30817 C30905E C30908E C30916E
Contextual Info: R C A INC/ ELECTRO OPTICS 10E D • 7484k7S DDDD133 3 | r- Vi-íi C30904E. C30905E. C30908E Silicon Avalanche Photodiodes Developmental Types Silicon Avalanche Photodiodes With Integral Light Pipes — Desigred Especially for Optical Communication Systems

Contextual Info: £ G & G/CANADA/OPTOELEK I t C J I sfj ID D Electro Optics m 3030bl0 D O G G I E bbO ICANA Photodiode C30954E, C30955E, C30956E DATA SHEET Large Area Long Wavelength Enhanced Silicon Avalanche Photodiodes for General-Purpose Applications • High Quantum Efficiency —

C30617E

Abstract: C30616E ingaas LED 5-1304 C86013E C30986E C86054E C86057E-13 C86057E-13-TC C86057E-14
Contextual Info: E G 8. G / C A N A D A / O P T O E L E K ItCJI 10E D • 3030blD OOQQOn A ■ CANA "H’ Electro InGaAsP Infrared Emitters Optics 1300 nm LED SERIES DATA SHEET C86057E SERIES - D u al-in -L in e p ack ag e S in g le o r m u ltim o d e fiber C86013E C86054E

laser rca

Abstract: 904nm
Contextual Info: E 6 & G/CANADA/OPTOELEK ID D • H B ÆM Electro ■ m v V ^ IO p t ic s 3G3DblO QQQG07G 2TT ■ CANA'p.tf 1 - 0 5 ^ SG2000A Series GaAs Pulsed Lasers DATA SHEET 904 nm Gallium Arsenide Injection Lasers for Pulsed Operation Small Emitting Areas Variants With Reverse-Case Polarity are Available

Contextual Info: E G & G/CANADA/OPTOELÊK BOBOblD ODDOESb Q • CANA 850 nm Quantum Well 7^ : Pulsed Laser Series DATA SHEET C86083E - High power pulsed laser in a coaxial package T O peration at 50ns pulse duration and 3 kH z repetition rate H igh P eak O utput Pow er: 10W @ 17 A

C86083E

Abstract: DHHS
Contextual Info: E G & G/CANADA/OPTOELÊK ETE D 3030blD 000025b □ ICANA 850 nm Quantum Weil7^ ^ : Pulsed Laser Series DATA SHEET C86083E - High power pulsed laser in a coaxial package • T ■ O p eration at 50n s p ulse d u ration and 3 k H z rep etition rate ■ H igh P ea k O u tp u t P ow er:

090Q

Abstract: PREAMPLIFIER TRANSIMPEDANCE optic fet C30902 rca 514 QC-04 30080 46 spectran C30998-010 C30998-250 303Db
Contextual Info: E G 8. G / C A N A D A / O P T O E L E K R C /1 303db l0 ID DD00171 DD7 I CANA Silicon Avalanche Photodiodes C30998 Series Optics DATA SHEET '-HI-6 1 For Detection of 400 to 1000 nm Radiation Transimpedance Preamplifier Modules With or Without Integral Fiber Optic Pigtails

photodiode demodulation

Abstract: EG*G Optoelectronics rca 036 C30957E
Contextual Info: ^Ü^EG kG CANADA LTD. Optoelectronics Division Wr$ï- Formerly; ItC il W Effective January 1, 1991 :tro ics Photodiode C30957E DATA SHEET n-Type Silicon p-i-n Photodetector • Detector Chip Close to Window ■ Low Operating Voltage — VR = 45 V ■ Anti-Reflection Coated to Enhance Responsivity at 900 nm

A1013 equivalent

Abstract: C30900E A1013
Contextual Info: E G & G/CANADA/OPTOELEK I f G i l 3 G 3 GblO ID 0 0 0 G123 Electro Optics and Devices 354 • CANA Photodiode Developm ental Type C30900E _ T - H l - f t £ P-Type Silicon p-i-n Photodetector Wide Range of Operating Voltage —

TA 8903 SN

Contextual Info: rMDNT* HEWLETT-PACKARD/ CMPNTS blE D • bit » — 4HH75ÛH 0006=170 =J43 M H P A Thai HEWLETT mLlLMPACKARD Silicon Bipolar Monolithic Variable Gain Amplifier Technical Data HPVA-0180 Features Description P la stic SO-8 P a c k a g e • 3 dB Bandw idth: DC to

TH7852A

Abstract: 7852a osjn
Contextual Info: TH 7852A FRAME TRANSFER CCD IMAGE SENSOR 288 X 208 PIXELS • Compatible with CCIR TV standard. ■ 1/2” optics compatible image format. ■ 2-phase, frame tranfer organization dynamic range: 3000/1 . ■ Optimized resolution and responsivity in the 400-1100 nm spectrum (visible + near infrared).