GAAS FET AMPLIFIER Search Results

GAAS FET AMPLIFIER Result Highlights (5)

Part	Manufacturer	Description
TA75W01FU	Toshiba Electronic Devices & Storage Corporation	Operational Amplifier, Bipolar (358) type Dual Op-Amp, 3V to 12V, SOT-505
TC75S55F	Toshiba Electronic Devices & Storage Corporation	Operational Amplifier, 1.8V to 7.0V, IDD=10μA, SOT-25/SOT-353
TC75S54F	Toshiba Electronic Devices & Storage Corporation	Operational Amplifier, 1.8V to 7.0V, IDD=100μA, SOT-25/SOT-353
TC75S51F	Toshiba Electronic Devices & Storage Corporation	Operational Amplifier, 1.5V to 7.0V, IDD=60μA, SOT-25/SOT-353
TC75S102F	Toshiba Electronic Devices & Storage Corporation	Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25

GAAS FET AMPLIFIER Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
mitsubishi f Contextual Info: MITSUBISHI SEMICONDUCTOR GaAs FET MGFC36V7785A 7.7~8.5GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC36V7785A is an internally impedance-matched GaAs power FET especially designed "for use in 7.7~8.5GHz band amplifiers. The hermetically sealed	OCR Scan	MGFC36V7785A MGFC36V7785A --51D 45dBc Item-01 Item-51 mitsubishi f	PDF
amplifiers Abstract: Low Noise Amplifiers Medium Power Amplifiers power amplifiers Contextual Info: A m plifier s Contents PAGE Broadband GaAs FET Amplifiers Low Noise Amplifiers Medium Power Amplifiers Limiting Amplifiers # • ,«11». Narrowband GaAs FET Amplifiers Low Noise Amplifiers Medium Power Amplifiers . 139 Module GaAs FET Amplifiers	OCR Scan		PDF
GSO 69 Contextual Info: MITSUBISHI SEMICONDUCTOR GaAs FET MGFC36V6472A 6.4~7.2GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION 21.0 ±0.3(0.827 ±0.012) GaAs power FET especially designed for use in 6.4~7.2GHz band amplifiers. The hermetically sealed Unit : millimeters (inches)	OCR Scan	MGFC36V6472A MGFC36V6472A 45dBc Item-01 Item-51 GSO 69	PDF
Nec K 872 Abstract: NE85001 NE8500100 NE8500100-RG NE8500100-WB NE8500199 Contextual Info: PRELIMINARY DATA SHEET GaAs MES FET NE85001 SERIES 1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE8500199 Power GaAs FET covers 2 GHz to 10 GHz frequency range for commercial amplifier, oscillator applications and so on. NE8500100 is the two-cells recessed gate chip used in ‘99’ package.	Original	NE85001 NE8500199 NE8500100 NE8500100 Nec K 872 NE8500100-RG NE8500100-WB	PDF
NEC 1357 Abstract: Nec K 872 Contextual Info: PRELIMINARY DATA SHEET GaAs MES FET NE85001 SERIES 1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE8500199 Power GaAs FET covers 2 GHz to 10 GHz frequency range for commercial amplifier, oscillator applications and so on. NE8500100 is the two-cells recessed gate chip used in ‘99’ package.	OCR Scan	NE85001 NE8500199 NE8500100 NE8500100 NEC 1357 Nec K 872	PDF
12api Abstract: 251C MGFC36V5964A Contextual Info: MITSUBISHI SEMICONDUCTOR GaAs FET MGFC36V5964A 5.9~6.4GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The MGFC36V5964A is an internally impedance-matched GaAs power FET especially designed for use in 5.9~6.4GHz band amplifiers. The hermetically	OCR Scan	FC36V5964A MGFC36V5964A 45dBc ltem-01 10MHz" 12api 251C	PDF
MGFC39V5964A Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC39V5964A 5.9 ~ 6.4GHz BAND 8W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC39V5964A is an internally impedance-matched GaAs power FET especially designed for use in 5.9 ~ 6.4 GHz band amplifiers.The hermetically sealed metal-ceramic	Original	MGFC39V5964A MGFC39V5964A 28dBm 10MHz June/2004	PDF
MGFC39V3436 Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC39V3436 3.4 ~ 3.6GHz BAND 8W INTERNALLY MATCHED GaAs FET . DESCRIPTION The MGFC39V3436 is an internally impedance-matched GaAs power FET especially designed for use in 3.4 ~ 3.6 GHz band amplifiers.The hermetically sealed metal-ceramic	Original	MGFC39V3436 MGFC39V3436 28dBm Oct-03	PDF
MGFS45V2123A Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45V2123A 2.1 - 2.3GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFS45V2123A is an internally impedance-matched GaAs power FET especially designed for use in 2.1 - 2.3 GHz band amplifiers.The hermetically sealed metal-ceramic	Original	MGFS45V2123A MGFS45V2123A 079MIN. 25deg	PDF
MGFC42V7785A Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V7785A 7.7 ~ 8.5GHz BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC42V7785A is an internally impedance-matched GaAs power FET especially designed for use in 7.7 ~ 8.5 GHz band amplifiers.The hermetically sealed metal-ceramic	Original	MGFC42V7785A MGFC42V7785A 32dBm 10MHz June/2004	PDF
MGFC36V4450A Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC36V4450A 4.4 ~ 5.0GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC36V4450A is an internally impedance-matched GaAs power FET especially designed for use in 4.4 ~ 5.0 GHz band amplifiers.The hermetically sealed metal-ceramic	Original	MGFC36V4450A MGFC36V4450A 25dBm 10MHz	PDF
MGFC39V3742A Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC39V3742A 3.7 ~ 4.2GHz BAND 8W INTERNALLY MATCHED GaAs FET . DESCRIPTION The MGFC39V3742A is an internally impedance-matched GaAs power FET especially designed for use in 3.7 ~ 4.2 GHz band amplifiers.The hermetically sealed metal-ceramic	Original	MGFC39V3742A MGFC39V3742A 28dBm 10MHz	PDF
MGFC36V4450A Abstract: MGFC36V4450 Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC36V4450A 4.4 ~ 5.0GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC36V4450A is an internally impedance-matched GaAs power FET especially designed for use in 4.4 ~ 5.0 GHz band amplifiers.The hermetically sealed metal-ceramic	Original	MGFC36V4450A MGFC36V4450A 25dBm 10MHz June/2004 MGFC36V4450	PDF
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45V2123A 2.1 - 2.3GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFS45V2123A is an internally impedance-matched GaAs power FET especially designed for use in 2.1 - 2.3 GHz band amplifiers.The hermetically sealed metal-ceramic	Original	MGFS45V2123A MGFS45V2123A -45dBc 079MIN. 25deg	PDF

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V3742 3.7 ~ 4.2GHz BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC42V3742 is an internally impedance-matched GaAs power FET especially designed for use in 3.7 ~ 4.2 GHz band amplifiers.The hermetically sealed metal-ceramic	Original	MGFC42V3742 MGFC42V3742 31dBm 10MHz June/2004	PDF
MGFC36V7177A Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC36V7177A 7.1 ~ 7.7GHz BAND 4W INTERNALLY MATCHED GaAs FET . DESCRIPTION The MGFC36V7177A is an internally impedance-matched GaAs power FET especially designed for use in 7.1 ~ 7.7 GHz band amplifiers.The hermetically sealed metal-ceramic	Original	MGFC36V7177A MGFC36V7177A 25dBm 10MHz June/2004	PDF
MGFC36V3742A Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC36V3742A 3.7 ~ 4.2GHz BAND 4W INTERNALLY MATCHED GaAs FET . DESCRIPTION The MGFC36V3742A is an internally impedance-matched GaAs power FET especially designed for use in 3.7 ~ 4.2 GHz band amplifiers.The hermetically sealed metal-ceramic	Original	MGFC36V3742A MGFC36V3742A 25dBm 10MHz June/2004	PDF
MGFC39V7177A Abstract: 71F71 Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC39V7177A 7.1 ~ 7.7GHz BAND 8W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC39V7177A is an internally impedance-matched GaAs power FET especially designed for use in 7.1 ~ 7.7 GHz band amplifiers.The hermetically sealed metal-ceramic	Original	MGFC39V7177A MGFC39V7177A 28dBm 10MHz June/2004 71F71	PDF
MGFC36V3742A Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC36V3742A 3.7 ~ 4.2GHz BAND 4W INTERNALLY MATCHED GaAs FET . DESCRIPTION The MGFC36V3742A is an internally impedance-matched GaAs power FET especially designed for use in 3.7 ~ 4.2 GHz band amplifiers.The hermetically sealed metal-ceramic	Original	MGFC36V3742A MGFC36V3742A 25dBm 10MHz	PDF
MGFC39V7785A Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC39V7785A 7.7 ~ 8.5GHz BAND 8W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC39V7785A is an internally impedance-matched GaAs power FET especially designed for use in 7.7 ~ 8.5 GHz band amplifiers.The hermetically sealed metal-ceramic	Original	MGFC39V7785A MGFC39V7785A 28dBm 10MHz	PDF
MGFC36V3436 Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC36V3436 3.4 ~ 3.6GHz BAND 4W INTERNALLY MATCHED GaAs FET . DESCRIPTION The MGFC36V3436 is an internally impedance-matched GaAs power FET especially designed for use in 3.4 ~ 3.6 GHz band amplifiers.The hermetically sealed metal-ceramic	Original	MGFC36V3436 MGFC36V3436 25dBm Oct-03	PDF
MGFC36V7785A Abstract: fet 30 f 124 Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET MGFC36V7785A * nfflSU^e ' 7.7~8.5GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The MGFC36V7785A is an internally impedance-matched GaAs power FET especially designed for use in 7.7~8.5GHz band amplifiers. The	OCR Scan	FC36V7785A MGFC36V7785A 45dBc ltem-01 ltem-51 fet 30 f 124	PDF
Band Power GaAs FET Abstract: 16621 high power FET transistor s-parameters MGFS45A2527B Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45A2527B 2.5 - 2.7GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFS45A2527B is an internally impedance-matched GaAs power FET especially designed for use in 2.5 - 2.7 GHz band amplifiers.The hermetically sealed metal-ceramic	Original	MGFS45A2527B MGFS45A2527B Band Power GaAs FET 16621 high power FET transistor s-parameters	PDF
gf-18 Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC40V3742 3.7 ~ 4.2GHz BAND 10W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC40V3742 is an internally impedance-matched GaAs power FET especially designed for use in 3.7 ~ 4.2 GHz band amplifiers.The hermetically sealed metal-ceramic	Original	MGFC40V3742 MGFC40V3742 29dBm 10MHz June/2004 gf-18	PDF

GAAS FET AMPLIFIER Search Results

GAAS FET AMPLIFIER Result Highlights (5)

GAAS FET AMPLIFIER Datasheets Context Search

mitsubishi f

amplifiers

GSO 69

Nec K 872

NEC 1357

12api

MGFC39V5964A

MGFC39V3436

MGFS45V2123A

MGFC42V7785A

MGFC36V4450A

MGFC39V3742A

MGFC36V4450A

MGFC36V7177A

MGFC36V3742A

MGFC39V7177A

MGFC36V3742A

MGFC39V7785A

MGFC36V3436

MGFC36V7785A

Band Power GaAs FET

gf-18