HM611 Search Results

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Abstract: HM6117FP-3 HM6117FP-4
Contextual Info: HM6117FP-3, HM6117FP-4 Prelimmary— 2048-word x 8-bit High Speed Static CMOS RAM • FEATURES • High Density Small Sized Package • Projection Area Reduced to One-Thirds o f Conventional D IP • Thickness Reduced to a Half of Conventional D IP • Single 5 V Supply and High Density 24 pin Package.

Contextual Info: HM6117FP-3, HM6117FP-4 Preliminary— 2048-word x 8-bit High Speed Static CMOS RAM • FEATU RES • • • • • • • • • • High Density Small Sized Package Projection Area Reduced to One-Thirds of Conventional D IP Thickness Reduced to a Half of Conventional D IP

Contextual Info: HM6117LFP-3, HM6117LFP-4 Preliminary 2 0 4 8 - w o rd x 8 - b it High S p e e d S t a t ic C M O S RAM • FEATURES High Density Small-sized Packaged Projection Area Reduced to One-Thirds of Conventional DIP Thickness Reduced to a Half of Conventional DIP

HM6116LP-4

Abstract: HM6116LP3 HM6116LP-3 HM6116P-4 HM6116P-3 HM6116 hm6116 battery HM6116LP-2 HM6118 HM6116LP HM6116LP-2 HM6116LP-3
Contextual Info: Maintenance Only HM6116 Series 2048-word x 8-bit High Speed CMOS Static RAM •FEATURES H M 6 1 1 6 P S e rie s • • Single 5V Supply High speed: Fast Access Time • Low Power Standby and Low Power Operation Standby: 100/iW typ. 10juW (typ.) (L-version)

HM6116P-3

Abstract: HM6116LP HM6116LP-2 HM6116LP-3 hm6116p-4 ic 6116 HM6114FP-4 HM6116LP-3
Contextual Info: Maintenance Only HM6116 Series 2048-word x 8-bit High Speed CMOS Static RAM HM6116P S erie s •FEA TURES • • Single 5V Supply High speed: Fast Access Time • Low Power Standby and Low Power Operation Standby: 100/jW typ. 10/uW (typ.) (L-version) 120ns/150ns/200ns (max.)

Contextual Info: HM6117P-3, HM6117P-4 — Prelim inary— 2048-word x 8-bit High Speed Static CMOS RAM • FEA TU RES • Single 5 V Supply and High Density 24 pin Package. • • High Speed: Fast Access Tim e Lo w Power Standby and • Lo w Power Operation: Completely Static R A M :

organizational structure samsung

Abstract: NMS256X8 MICRON Cross Reference NMS256 256K RAM HM62256 MK6264 51256SL TC5565 "cross reference" MN44256 M5M5256
Contextual Info: Static RAM Cross Reference STATIC RAM CROSS REFERENCE ORGANIZATIONAL STRUCTURE 2K 2K X X 32K 8K X e w/CE, OE 8 W/CE1, CE2 X 8 Stow 8 Slow COMPETITIVE VENDOR SH ARP MODEL LH5116 LH5118 LH51256 LH5164A AMD Am9128 Harris CDM6116 Hitachi HM6116A Hyundai HY6116

HM6116P-3

Abstract: HM6116LP-3 HM6116P-4 HM6116 6116fp HM6116LP HM6116LP-2 HM6116LP-3 HM6116LP3 HM6116LP-4 HM6116P3 HM6116FP-3
Contextual Info: Maintenance Only HM6116 Serles 2048-word x 8-bit High Spaed CMOS Static RAM •FEA TU R ES HM6116P Series • • Single 5V Supply High speed: Fast Access Time • Low Power Standby and • • • 180mW typ. 160mW (typ.) (L-version) Completely Static RAM:

6264 SRAM

Abstract: SRAM 6264
Contextual Info: UALON MICROELECTRONICS 2ME D HM6116 2K X 8 SRAM m M S T a o m DQJOOSB a T~ ‘•Rp ~3.3-l3~. H M 6264/L 8K 8 SRAM X M Features Features * High speed - 70/100/120 ns MAX. * Low Power dissipation: 250mW ( Ty p .) Operating. 5 /tW ( Ty p .) Standby. * Single 5V power supply.

HM6117P-3

Abstract: HM6117P-4
Contextual Info: HM6117P-3, HM6117P-4 -P n M r a y - 2048-word x 8-bit High Speed Static CMOS RAM • FEA TU RES Sin gle 5 V S u p p ly and High D e n s ity 2 4 pin Package. 150n s / 200ns m a x . H igh S p e e d : F a s t A cce ss T im e L o w P o w e r S ta n d b y and

6116asp

Abstract: MA 6116A M6116a 6116al 6116A
Contextual Info: HM6116A Series Maintenance Only 2048-word * 8-bit High Speed Static CMOS RAM • FURTURES H M 6 1 16 AP Series • High speed: Fast Access Tim e • Low Power Standby and 120ns/150ns/200ns m ax. Standby: 100/nW (typ .) Operation: 15mW (typ .) (f = 1 M H z)

HM6116AP-15

Abstract: HM6116ASP-15 HM6116ALSP-15 HM6116A hm6116asp-12 HM6116A-20 HM6116ALP-15 HM6116ALP-12 HM6116AP-20 hm6116asp
Contextual Info: HM6116A Series Maintenance Only 2 0 4 8 - w o r d * 8 - b i t H ig h S p e e d S t a t i c C M O S RAM • FURTURES • High speed: Fast Access Time • Low Power Standby and Low Power Operation HM6116 AP Series 120ns/150ns/200ns max. Standby: 100//W (typ.)

CROSS MITSUBISHI

Abstract: UPD446 tc55257 tmm2016 sony cross reference sgs thomson tmm2018 AKM6264 hm6264 IDT71256
Contextual Info: SRAM CROSS REFERENCE PART DEVICE MANUFACTURER NUMBER MOSEL PART NO. PART DEVICE MANUFACTURER NUMBER MOSEL PART NO. 2K X 8 Fujitsu Goldstar Hitachi Hitachi Hyundai IDT NEC RCA SGS Thomson Toshiba Toshiba Toshiba UMC Winbond MB8416 GM76C28 HM6116 HM6216 HY6116

Contextual Info: HM6117LFP-3, H M 6117LFP-4 — Preliminary— 2048-word x 8-bit High Speed Static CMOS RAM •FEATURES • High Density Small-sized Packaged • Projection Area Reduced to One-Thirds o f Conventional DIP • Thickness Reduced to a Half o f Conventional DIP

HM6117LP-3

Abstract: HM6117LP-4 A723 A773
Contextual Info: HM6117LP-3, HM6117LP-4 — Preliminary— 2048-word x 8-bit High Speed Static CMOS RAM •FEA TURES • • Single 5V Supply and High Density 24 Pin Package. High Speed: Fast Access Tim e 150ns/200ns max. • Low Power Standby and Low Power Operation; Standby: 10/iW typ . T w o Chip Enable In p u t fo r B attery Back up

Contextual Info: HM6117LP-3, HM6117LP-4 — Preliminary— 2048-word x 8-bit High Speed Static CMOS RAM •FEATURES • • • • • • • • Single 5V Supply and High Density 24 Pin Package. High Speed: Fast Access Time 150ns/200ns max. Low Power Standby and Low Power Operation;

HM61

Abstract: HM6117P-3 HM6117P-4
Contextual Info: HM6117P-3, HM6117P-4 — P re li m in a ry 2 0 4 8 - w o r d x 8 -bit H igh S p e e d S t a t i c C M O S R A M • FEA TURES • Single 5 V Su p ply and High Density 24 pin Package. • High Speed: Fast Access Tim e • L o w Pow er Stan d b y and Stan d b y:

HM6116ALSP-12

Contextual Info: HM6110A Series Maintenance Only 2 0 4 8 -word x 8-bit High Speed Static CMOS RAM • FURTURES • High speed: Fast Access Time • Low Power Standby and Low Power Operation 120ns/150ns/200ns max. Standby: HM 6116AP Series 100fiW (typ.) 5fxW (typ.) (L-version)

128x128

Abstract: HM6117LFP-4 HM6117LFP-3 back up memory battery
Contextual Info: HM6117LFP-3, HM6117LFP-4 —Preliminary— 2048-word x 8-bit High Speed Static CMOS RAM • FEA TUR ES • High Density Small-sized Packaged • Projection Area Reduced to One-Thirds o f Conventional D IP • Thickness Reduced to a Half o f Conventional D IP

TC5118160

Abstract: msm-561 TMS444000 msm561 M5M418165 M5M418160 tms44c256 TC5117405 HY514264 HY514260
Contextual Info: New Page 1 DRAM 1Meg 1Mx1 256Kx4 FPM FPM Fujitsu MB81C100 MB81C4256 Goldstar GM71C100 GM71C4256 Hitachi HM511000 HM514256 Hyundai HY531000 HY534256 Micron MT4C1024 MT4C4256 Mitsubishi M5M41000 M5M44256 Nec UPD421000 UPD424256 Oki MSM511000 MSM514256 Samsung alt KM41C1000 KM44C256

Contextual Info: H M 6 1 1 7 L F P - 3 ,H M 6 1 1 7 L F P -4 2048-word x8-bit High Speed S ta tic C M O S RAM •FEATURES • • • » High Density Small-sized Packaged Projection Area Reduced to One-Thirds of Conventional DIP Thickness Reduced to a Half of Conventional D IP

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

TMS44C256

Abstract: HY6116 CROSS REFERENCE sram mcm6264 ZMD cross reference SIMTEK cross reference HM50464 soj28 sop28 HM65664A HM6116 oki cross
Contextual Info: ZMD Cross Reference List Density Organization Store Type 4Kbit 512 x 8 HardStore 16Kbit 2K x 8 CapStore PowerStore HardStore SoftStore PowerStore PowerStore 64Kbit 8K x 8 CapStore HardStore SoftStore PowerStore PowerStore 256Kbit 32K x 8 CapStore SoftStore

hm6117

Abstract: TC5518
Contextual Info: F U JIT S U M IC R O E L E C T R O N IC S . MB8418-20 MB8418-20L INC. CMOS 16,384-BIT STATIC RANDOM ACCESS MEMORY DESCRIPTION T h e Fu jits u M B 84 18 is a 2048 w ord by 8-bit s ta tic rand om a c ­ c e ss m em o ry fa b ricated w ith high density, high relia b ility C o m p le ­