HY51V4400B Search Results

Contextual Info: HYUNDAI H Y M 5 V 7 2 A 1 2 0 A 1M X X - S e r ie s 72-bit CMOS DRAM MODULE DESCRIPTION The HYM5V72A120A is a 1M x 72-bit Fast page mode CMOS DRAM module consisting of two HY51V4400B in 20/26 pin SOJ or TSOP-II, four HY51V18160B 42/42 pin SOJ or 44/50 pin TSOP-li and two 16-bit BiCMOS line driver

Contextual Info: HYUNDAI HYM5V641OOA N-Series 1M x 64-bit CMOS ORAM MODULE DESCRIPTION The HYM5V64100A is a 1M x 64-bit Fast page mode CMOS DRAM module consisting of sixteen HY51V4400B in 20/26 pin SOJ or TSOP-II and two 16-bit BiCMOS line driver in TSSOP on a 168 pin glass-epoxy printed circuit

tractel

Abstract: s8m9
Contextual Info: •HYUNDAI HY51V4400B Series 1M X 4-bit CMOS DRAM PRELIMINARY DESCRIPTION The HY51V4400B is the new generation and fast dynamic RAM organized 1,048,576 x 4-bit. The HY51V4400B utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

Contextual Info: •HY U N DA I HYM5V321OOA N-Series IM X 32-blt CMOS DRAM MODULE DESCRIPTION The HYM5V32100A is a 1M x 32-bit Fast page mode CMOS DRAM module consisting of eight HY51V4400B in 2G/26 pin TSOPII on a 72 Zig Zag Dual tabs pin glass-epoxy printed circuit board. 0.22nF decoupling capacitor

Contextual Info: • H Y U N D A I HY51V4400B Series 1M X 4-bit CMOS DRAM DESCRIPTION The HY51V4400B is the new generation and fast dynamic RAM organized 1,048,576 x 4-bit.The HY51V4400B utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

U2506

Contextual Info: “ H Y U N D A I H Y M 5 V 7 2 1 3 A N - S e r i e s 1 M x 72_bjt CM 0S DRAM MODULE DESCRIPTION The HYM5V72103A is a 1M x 72-bit Fast page mode CMOS DRAM module consisting of sixteen HY51V4400B in 20/26 pin SOJ or TSOP-II, two HY51V4403B in 24/26 pin SOJ or TSOP-II and two 16-bit BiCMOS line drivers in

Contextual Info: “H Y U N D A I H Y 5 1 V 4 4 0 0 B S e r ie s 1 M x 4-bit CMOS DRAM PRELIMINARY DESCRIPTION The HY51V4400B is the new generation and fast dynamic RAM organized 1,048,576 x 4-bit. The HY51V4400B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

MQ40

Contextual Info: HY51V4400B Series •HYUNDAI 1M x 4-bit CMOS DRAM DESCRIPTION ORDERING INFORMATION This family is a 4M bit dynamic RAM organized 1,048,576 x 4-bit configuration with CMOS DRAMs. The circuit and process design allow this device to achieve high performance and low power dissipa­

Contextual Info: HYUNDAI HYM5V72A100A N-Series 1M X 72-bit CMOS DRAM MODULE DESCRIPTION The HYM5V72A1COA is a 1M x 72-bit Fast page mode CMOS DRAM module consisting of eighteen HY51V4400B in 20/26 pin SOJ or TSOR-II and two 16-bit BiCMOS line driver in TSSOP on a 168 pin glass-epoxy printed circuit

1AC12

Contextual Info: HY51V4400B Series • HYUNDAI 1M X 4-bit CMOS DRAM DESCRIPTION The HY51V4400B is the new generation and fast dynamic RAM organized 1,048,576 x 4-bit.The HY51V4400B utilizes Hyundai's C M OS silicon gate process technology as well as advanced circuit techniques to provide wide

d 100 d

Abstract: Y514100A HYM532220
Contextual Info: QUICK REFERENCE D R A M M O D U L E Q U IC K R E F E R E N C E 3.3V DIMM TYPE S IZ E 8-B yte 8MB D E S C R IP T IO N 1M X 64 P A R T NO. EDO, SL HYM5V64104AX/ATX FPM, SL HYM5V64100AN/ATN SPEED 60/70/80 1K HY51V18164BJ/BT X 4 D, 1.00" 1K HY51V4400BJ/BT D, 1.00"

Contextual Info: HYUNDAI HYM5V72A220A X-Series 1M X 7 2-b it CMOS DRAM MODULE DESCRIPTION The HYM5V72A220A is a 1M x 72-bit Fast page mode CMOS DRAM module consisting of four HY51V4400B in 20/26 pin TSOP-II, eight HY51V18160B 44/50pin TSOP-II and four 16-bit BiCMOS line driver in TSSOPon a 168 pin

Contextual Info: H Y 5 1 V 4 4 0 3 B • • H Y U N D A I S e r ie s IM x 4-bit CMOS DRAM with4CAS PRELIMINARY DESCRIPTION The HY51V4403B is the new generation and fast dynamic RAM organized 1,048,576 x 4-bit. The HY51V4403B has four CASs CAS0-3 which control corresponding data I/O port in conjunction with OE(eg. CASO controls DQO,

BEDO RAM

Abstract: hy5118160b HY512264 HY5117404 HY5118164B
Contextual Info: TABLE OF CONTENTS •H Y U N D A I 1. TABLE OF CONTENTS Index . 1 2. PRODUCT QUICK REFERENCE GUIDE

HY51V4403B

Abstract: csi40
Contextual Info: HYUNDAI H Y 5 1 V 4 4 0 3 B S e r ie s 1M x 4-bit CMOS DRAM with4CAS PRELIMINARY DESCRIPTION Tine HY51V4403B is the new generation and fast dynamic RAM organized 1,048,576 x 4-bit. The HY51V4403B has four CASs CAS0-3 which control corresponding data I/O port in conjunction with OE(eg. CASO controls DQO,

r4kf

Abstract: HY53C464LS fr4k HY53C256LS HY531000J
Contextual Info: «HYUNDAI QUICK REFERENCE DRAM ORGANIZATION PARTNUMBER SPEEDfiw FEATURES PACKAGE 256K bit 256Kx 1) HY53C256S HY53C256LS HY53C256F HY53C256LF HY53C464S HY53C464LS HY53C464F HY53C464LF HY531000S HY531000J HY531000AS HY531000ALS HY531000AJ HY531000AU HY534256S

AUO-PL321.60

Abstract: HY51V18164B HY514264 HY514260
Contextual Info: -HYUNDAI QUICK REFERENCE GUIDE DRAM ORDERING INFORMATION ORGANIZATION 1M bit 1Mx1 PART NUMBER HY531000AS HY531000ALS HY531000AJ HY531000ALJ SPEED(ns) 60/70/80 60/70/80 60/70/80 60/70/80 FEATURES F/P F/P, L-part F/P F/P, L-part PACKAGE 1Spin PDIP 18pin PDIP

HY5118160

Abstract: 256K 4bit DRAM HY514260 HY51426 HY51V16100 HY531000 4K x 1 DRAM 256k 8bit 512k 4bit
Contextual Info: “HYUNDAI 1. TABLE OF CONTENTS TABLE OF CONTENTS 2. PRODUCT QUICK REFERENCE GUIDE

HY51V18164

Abstract: HY5118164 HY514260 HY51V65400 HY51V17804CJ
Contextual Info: «HYUNDAI DRAM ORDERING INFORMATION ORGANIZATION 1M bit 256Kx4 2M bit (256x8) 2M bit (128Kx16) 4M bit (4Mx1) 4M bit (1 Mx4) Note : FP PART NUMBER HY534256AJ HY534256ALJ HY512800J HY512800LJ HY512800SLJ HY512264JC HY512264LJC HY512264SLJC HY512264TC HY512264LTC

Contextual Info: • H jjjH DRAM MODULE 5V SIMM TYPE SIZE 72 Pin 32MB As of '96.3Q DESCRIPTION. 8M X 32 SIM M 8M X 36 K PART NO. SPEED REF. DEVICE USED EDO.SL H Y M 532814A M /A T M 6 0 /7 0 /8 0 2K HY5117404AJ/AT x 16 FPM.SL H Y M 532810A M /A T M 5 0 /6 0 /7 0 2K HY5117400AJ/AT x 16