IGBT TO 60 KHZ Search Results
IGBT TO 60 KHZ Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| GT50J123 |
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IGBT, 600 V, 59 A, TO-3P(N) |
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| GT20J121 |
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IGBT, 600 V, 20 A, TO-220SIS |
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| GT30J121 |
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IGBT, 600 V, 30 A, TO-3P(N) |
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| GT30J122A |
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IGBT, 600 V, 30 A, TO-3P(N) |
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| GT20N135SRA |
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IGBT, 1350 V, 40 A, Built-in Diodes, TO-247 |
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IGBT TO 60 KHZ Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: Advance Technical Information IXYH20N65C3 XPTTM 650V IGBT GenX3TM VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 20-60 kHz Switching = = ≤ = 650V 20A 2.5V 28ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C |
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IXYH20N65C3 IC110 O-247 20N65C3 | |
375A1
Abstract: IXXH75N60C3
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IXXH75N60C3 IC110 O-247 062in. 75N60C3 375A1 IXXH75N60C3 | |
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Contextual Info: Advance Technical Information XPTTM 600V IGBT GenX3TM VCES IC110 VCE sat tfi(typ) IXXH75N60C3 Extreme Light Punch Through IGBT for 20-60 kHz Switching = = ≤ = 600V 75A 2.2V 75ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C |
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IC110 IXXH75N60C3 O-247 Non60 75N60C3 | |
50N60C3Contextual Info: Preliminary Technical Information IXXH50N60C3D1 XPTTM 600V IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 20-60 kHz Switching = = ≤ = 600V 50A 2.30V 42ns TO-247 AD Symbol Test Conditions VCES VCGR TJ = 25°C to 175°C |
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IXXH50N60C3D1 IC110 O-247 IF110 50N60C3 | |
75n60Contextual Info: Preliminary Technical Information IXXH75N60C3 XPTTM 600V IGBT GenX3TM VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 20-60 kHz Switching = = ≤ = 600V 75A 2.3V 75ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C |
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IXXH75N60C3 IC110 O-247 062in. 75N60C3 75n60 | |
transistor C013Contextual Info: VS-GB90SA120U www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Ultrafast IGBT , 90 A FEATURES • NPT Generation V IGBT technology • Square RBSOA • Positive VCE(on) temperature coefficient • Fully isolated package • Speed 8 kHz to 60 kHz |
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VS-GB90SA120U OT-227 E78996 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 transistor C013 | |
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Contextual Info: VS-GB90SA120U www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Ultrafast IGBT , 90 A FEATURES • NPT Generation V IGBT technology • Square RBSOA • Positive VCE(on) temperature coefficient • Fully isolated package • Speed 8 kHz to 60 kHz |
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VS-GB90SA120U OT-227 E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
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Contextual Info: Preliminary Technical Information IXYA20N65C3 IXYH20N65C3 XPTTM 650V IGBT GenX3TM VCES = IC110 = VCE sat tfi(typ) = Extreme Light Punch Through IGBT for 20-60 kHz Switching 650V 20A 2.5V 28ns TO-263 AA (IXYA) Symbol Test Conditions Maximum Ratings |
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IXYA20N65C3 IXYH20N65C3 IC110 O-263 20N65C3 | |
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Contextual Info: Advance Technical Information IXYH40N65C3 XPTTM 650V IGBT GenX3TM VCES = IC110 = VCE sat tfi(typ) = Extreme Light Punch Through IGBT for 20-60 kHz Switching 650V 40A 2.2V 52ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C |
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IXYH40N65C3 IC110 O-247 40N65C3H1 | |
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Contextual Info: Preliminary Technical Information XPTTM 600V IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) IXXH75N60C3D1 Extreme Light Punch Through IGBT for 20-60 kHz Switching = = ≤ = 600V 75A 2.2V 75ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C |
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IC110 IXXH75N60C3D1 O-247 IF110 75N60C3 | |
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Contextual Info: IXYH40N65C3H1 XPTTM 650V IGBT GenX3TM w/ Sonic Diode VCES = IC110 = VCE sat tfi(typ) = Extreme Light Punch Through IGBT for 20-60 kHz Switching 650V 40A 2.20V 52ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C |
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IXYH40N65C3H1 IC110 O-247 IF110 40N65C3H1 10-30-12/DMHP19-067F | |
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Contextual Info: Advance Technical Information IXXH30N60C3 XPTTM 600V IGBT GenX3TM VCES = IC110 = VCE sat tfi(typ) = Extreme Light Punch Through IGBT for 20-60 kHz Switching 600V 30A 2.2V 32ns TO-247 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C |
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IXXH30N60C3 IC110 O-247 30N60C3D1 | |
150-A54Contextual Info: Advance Technical Information IXXH75N60C3D1 XPTTM 600V IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 20-60 kHz Switching = = ≤ = 600V 75A 2.2V 75ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C |
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IXXH75N60C3D1 IC110 O-247 IF110 062in. 75N60C3 150-A54 | |
IXXH75N60C3D1
Abstract: 75N60C3
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IXXH75N60C3D1 IC110 O-247 IF110 062in. 75N60C3 IXXH75N60C3D1 | |
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Contextual Info: Preliminary Technical Information IXYH40N65C3 XPTTM 650V IGBT GenX3TM VCES = IC110 = VCE sat tfi(typ) = Extreme Light Punch Through IGBT for 20-60 kHz Switching 650V 40A 2.2V 52ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C |
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IXYH40N65C3 IC110 O-247 40N65C3H1 | |
30N60C3DContextual Info: Advance Technical Information XPTTM 600V IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) IXXH30N60C3D1 Extreme Light Punch Through IGBT for 20-60 kHz Switching = = ≤ = 600V 30A 2.2V 32ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C |
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IC110 IXXH30N60C3D1 O-247 IF110 30N60C3D1 30N60C3D | |
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Contextual Info: Preliminary Technical Information IXYH40N65C3H1 XPTTM 650V IGBT GenX3TM w/ Sonic Diode VCES = IC110 = VCE sat tfi(typ) = Extreme Light Punch Through IGBT for 20-60 kHz Switching 650V 40A 2.2V 52ns TO-247 AD Symbol Test Conditions Maximum Ratings |
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IXYH40N65C3H1 IC110 O-247 IF110 | |
IXYH40N65C3H1
Abstract: 40N65
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IXYH40N65C3H1 IC110 O-247 IF110 062in. 40N65C3H1 IXYH40N65C3H1 40N65 | |
DS100493Contextual Info: Preliminary Technical Information IXXH60N65C4 XPTTM 650V IGBT GenX4TM VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 20-60 kHz Switching Test Conditions VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ 650 650 V V VGES VGEM |
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IXXH60N65C4 IC110 O-247 60N65C4 DS100493 | |
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Contextual Info: Preliminary Technical Information IXXH110N65C4 XPTTM 650V IGBT GenX4TM VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 20-60 kHz Switching Symbol Test Conditions VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ 650 650 V V |
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IXXH110N65C4 IC110 110N65C4 1-30-13-A | |
60N65C4Contextual Info: Advance Technical Information IXXH60N65C4 XPTTM 650V IGBT GenX4TM VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 20-60 kHz Switching Symbol Test Conditions VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ 650 650 V V VGES |
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IXXH60N65C4 IC110 O-247 60N65C4 | |
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Contextual Info: Advance Technical Information IXYP20N65C3D1M XPTTM 650V IGBT GenX3TM w/Diode Extreme Light Punch Through IGBT for 20-60 kHz Switching Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M 650 650 V V VGES VGEM |
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IXYP20N65C3D1M IC110 IF110 20N65C3 0-13-A | |
IXXH110N65C4Contextual Info: Advance Technical Information IXXH110N65C4 XPTTM 650V IGBT GenX4TM VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 20-60 kHz Switching Symbol Test Conditions VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ 650 650 V V VGES |
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IXXH110N65C4 IC110 110N65C4 IXXH110N65C4 | |
GB75SA120UPContextual Info: GB75SA120UP Vishay High Power Products Insulated Gate Bipolar Transistor Ultrafast IGBT , 75 A FEATURES • • • • • • • • SOT-227 NPT Generation V IGBT technology Square RBSOA Positive VCE(on) temperature coefficient Fully isolated package Speed 8 kHz to 60 kHz |
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GB75SA120UP 2002/95/EC OT-227 OT-227 11-Mar-11 GB75SA120UP | |