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    IRFR9212 Search Results

    IRFR9212 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRFR9212 International Rectifier Surface Mount HEXFETs Scan PDF
    IRFR9212 International Rectifier P-Channel HEXFET Transistors 200 Volt, 3.0 Ohm Scan PDF
    IRFR9212 International Rectifier HEXFET Power MOSFETs Scan PDF
    IRFR9212 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRFR9212 Unknown FET Data Book Scan PDF
    IRFR9212 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    IRFR9212 Samsung Electronics P-Channel Power MOSFETS Scan PDF

    IRFR9212 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Q2N4401

    Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751
    Text: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog


    Original
    PDF RD91EB Q2N4401 D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751

    irc832

    Abstract: No abstract text available
    Text: H EXFET Power MOSFETs International S Rectifier H EXSense Current Sensing N-Channel Part Number IRCZ24 IRCZ34 IRCZ44 IRC531 IRC530 IRC540 Vqs Drain Source Voltage Volts RDS(on) On-State Resistance (Ohms) ID Continuous Drain Current 2S°C Casa (Amps) >DM Pu'*


    OCR Scan
    PDF IRCZ24 IRCZ34 IRCZ44 IRC531 IRC530 IRC540 IRC630 IRC640 IRC634 IRC644 irc832

    IRFR012

    Abstract: IRFR411
    Text: FUNCTION GUIDE POWER MOSFETs D-PAK N-CHANNEL BVdss V ID(onXA) RDS(onX0) 50.00 6.70 8.20 8.20 14.00 15.00 15.00 0.300 0.300 0.200 0.120 0.120 0.100 IRFR012 IRLR010 IRFR010 IRFR022 IRLR020 IRFR020 60.00 6.70 8.20 8.20 14.00 15.00 15.00 0.300 0.200 0.300 0.120


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    PDF IRFR012 IRLR010 IRFR010 IRFR022 IRLR020 IRFR020 IRFR015 IRFR014 IRLR014 IRFR025 IRFR411

    fr9210

    Abstract: F 9212 u921
    Text: IRFR9210/9212 IRFU9210/9212 P-CHANNEL POWER MOSFETS FEATURES • • • • • • • L ow e r R d s o n Im p ro ve d in d u ctive r u g g e d n e s s F a s t sw itc h in g tim e s R u g g e d p o ly silic o n g a te c e ll stru ctu re Low er in pu t c a p a c ita n c e


    OCR Scan
    PDF IRFR9210/9212 IRFU9210/9212 0/U921 2/U921 Puls9212 fr9210 F 9212 u921

    FR9110

    Abstract: FR91 1RFR9020 Samsung D-PAK IRFR9022 IRFR9120 IRFR9121 IRFR9210 IRFR9212
    Text: - mA SÜ £ it % i £ fg Ta=25t> Vd s or Vd g Vg s (V) (V) Id Pd * /CH * /CH (A) m E& Vg s th) Id s s Igss Vg s (V) (H A ) Vd s (V) (V) (V) Id (mA) (max) *typ V g s ( 0 ) (V) SAMSUNG SAMSUNG P P -50 -50 0. 28 0. 33 1RFR9110 IRFR9111 1RFR9120 IRFR9121 IRFR9210


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    PDF 1RFR9020 IRFR9022 FR9110 1RFR9111 IRFR9120 IRFR-247 IRFS150 O-247 IRFS151 FR91 Samsung D-PAK IRFR9121 IRFR9210 IRFR9212

    irfu9210

    Abstract: irfu9212 DIODE C93 C92 diode IRFR9210 IRFR9212
    Text: h e o | x a s s ts a o o o h h o s | Data ^ INTERNATIONAL R E C T I F I E R Nq pD. 9 H 1 B T-37-25 INTERNATIONAL RECTIFIER llO R l REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS IRFRS210 IRFRS21S IRFUS210 IRFU0212 P-CHANNEL -200 Volt, 3.0 Ohm HEXFET


    OCR Scan
    PDF 55MSS T-37-25 IRFR9210, IRFR9212, IRFU9210, IRFU9212 aGGfl347 IRFR9210TR 10637T irfu9210 DIODE C93 C92 diode IRFR9210 IRFR9212

    IRF 850 mosfet

    Abstract: MOSFET IRF 635 MOSFET IRF 630 MOSFET IRF 713 IRF N-Channel Power MOSFETs IRF 740 N IRF 840 MOSFET IRF 450 MOSFET P Channel Power MOSFET IRF irf 540 mosfet
    Text: FUNCTION GUIDE POWER MOSFETs N-CHANNEL MOSFET TO-220 Vos Id 50 60 80 100 120 150 180 200 2 2.5 350 IRF IRF 713 712 IRF IRF IRF 711 710 1.3 1.5 250 400 450 500 550 600 700 800 850 900 IRF IRF IRF IRF IRF SS P SSP 613 612 614 823 822 2N85 2N90 IRF IRF IRF IRF


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    PDF O-220 IR9523 IRF9522 IRF9513 IRF9511 IRF9512 IRF9510 IRF9623 IRF9621 IRF9622 IRF 850 mosfet MOSFET IRF 635 MOSFET IRF 630 MOSFET IRF 713 IRF N-Channel Power MOSFETs IRF 740 N IRF 840 MOSFET IRF 450 MOSFET P Channel Power MOSFET IRF irf 540 mosfet

    fr9210

    Abstract: No abstract text available
    Text: P-CHANNEL POWER MOSFETS IRFR9210/9212 FEATURES • • • • • • • Lower R d s ON Improved inductive ruggedness Fast switching times Rugged polysiiicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability


    OCR Scan
    PDF IRFR9210/9212 -200V fr9210

    IRF9210

    Abstract: darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1
    Text: PRODUCT INDEX FUNCTIONAL SELECTION GUIDE BIPOLAR TRANSISTOR DESCRIPTION MRTNO. 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 KSP13 KSP2222A KSP27 KSP2907A KSP42 KSP44 KSP56 KSP92 KST10-TF KST2222A-TF KST2484-TF KST2907-TF KST3904-TF KST3906-TF


    OCR Scan
    PDF 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 IRF9210 darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1

    IRFP9640

    Abstract: IRFP9610 IRFS1Z3 irfb220 IRFS1Z0 IRFP9630 251C IRFR020 IRFR120 IRFR121
    Text: - SI € tt f « r Vd s or € ± * Vd g ft V £ Vg s (V) 1 *£ (Ta=25tC ) Ig s s Pd Id * /CH * /CH (A) (W) V g s th) Id s s (nA) Vg s (V) ( M A) Vd s (V) min max (V) (V) n ft '14 Ciss 9 fs Coss Crss ft B ffi % V g s =0 (max) *typ V g s (V) (0) Id (A) *typ


    OCR Scan
    PDF 1HFPG50 O-247AC T0-247AC IRFR120 IRFR121 IRFR210 IRFR212 IRFR220 IRFR222 IRFR310 IRFP9640 IRFP9610 IRFS1Z3 irfb220 IRFS1Z0 IRFP9630 251C IRFR020

    sot89 footprint

    Abstract: INTERNATIONAL RECTIFIER 9516 9524 IRFR20 IRFS1Z0 T0252AA 9519 9520
    Text: SURFACE MOUNT HEXFETs INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER lIO R l *4Ö S S 4 S 2 2bE D QG1DSS2 ~T~3c -03 Ô • Surface Mount Packages N-CHANNEL Types Vos Q max) V Iq cont Tq - 25°C 'DM pulsed PD max A A W r 0S(0N) Bulletin IRFS1Z3 60 3.20 0.75


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    PDF IRFR024 IRFR014 IRFR121 IRFR111 IRFR120 IRFR110 IRFR20 IRFR222 IRFR210 IRFR212 sot89 footprint INTERNATIONAL RECTIFIER 9516 9524 IRFS1Z0 T0252AA 9519 9520

    IRFS1Z3

    Abstract: IRFR121 IRFR014 IRFR024 IRFR110 IRFR111 IRFR120 IRFR210 IRFR212 IRFR220
    Text: SURFACE MOUNTED DEVICES INTERNATIONAL RECTIFIER ICR O ' CONTENTS E- Page p- APPLICATION DETAILS DIODES — SCHGTTKY — STANDARD RECOVERY — ULTRA FAST RECOVERY ENCAPSULATED BRIDGES FOOTPRINT AND PAD DIMENSIONS HEXFETs MILITARY CAPABILITY OUTLINES TAPE REEL INFORMATION


    OCR Scan
    PDF t0-243AA is0t-89i IRFR024 IRFR014 T0-252AA IRFR121 IRFR111 524R214 IRFR320 IRFR310 IRFS1Z3 IRFR110 IRFR120 IRFR210 IRFR212 IRFR220

    IRC540

    Abstract: irfs1z0 IRCB40 irfs1z3 irFR9024 HEXFET IRCZ34 IRC832 IRC840 *FR9110 THOMSON 58E
    Text: THOMSON/ DISTRIBUTOR 5ÖE TCSK D HEXFET Power MOSFETs International S»] Rectifier HEXSense Current Sensing N-Channel Part Number Vq s Drain Source Voltage Volts IRCZ24 IRCZ34 IRCZ44 IRC531 IRC530 IRC540 IRC630 IRC640 IRC634 IRC644 IRC730 IRC740 IRC832 IRC830


    OCR Scan
    PDF T02tia73 IRCZ24 IRCZ34 IRCZ44 IRC531 IRC530 IRC540 IRC630 IRC640 IRC634 IRC540 irfs1z0 IRCB40 irfs1z3 irFR9024 HEXFET IRCZ34 IRC832 IRC840 *FR9110 THOMSON 58E

    IRF740 "direct replacement"

    Abstract: irf9640 REPLACEMENT GUIDE IRF9540 replacement IRF640 irf510 2Sk350 HITACHI IRF9613 rca9213a buz11 cross reference sgsp467 fu120
    Text: CROSS REFERENCE GUIDE POWER MOSFETs Inter­ national Rectifier SAMSUNG Direct Replace­ ment Inter­ national Rectifier SAMSUNG Direct Replace­ ment Inter­ national Rectifier SAMSUNG Direct Replace­ ment Inter­ national Rectifier SAMSUNG Direct Replace­


    OCR Scan
    PDF IRF510 IRF511 IRF512 IRF513 IRF520 IRF521 IRF522 IRF523 IRF610 IRF611 IRF740 "direct replacement" irf9640 REPLACEMENT GUIDE IRF9540 replacement IRF640 irf510 2Sk350 HITACHI IRF9613 rca9213a buz11 cross reference sgsp467 fu120

    FR9110

    Abstract: 1RFR9020 irfb220 IRFS1Z3 251C IRFR020 IRFR120 IRFR121 IRFR210 IRFR212
    Text: - SI € tt f « ± r Vd s £ Vgs *£ 1 T a = 2 5 tC Ig s s Pd Id Id s s Vg s th) or € n ft ft f Ds(on) Vd s = '14 lD(on) Ciss 9 fs Coss Crss * Vd g (V) (V) * /CH * /CH (A) (W) (nA) Vg s (V) ( M A) Vd s (V) min max (V) (V) (max) Id (mA) ft B ffi % Vg s =0


    OCR Scan
    PDF 1HFPG50 O-247AC T0-247AC IRFS150 O-247 IRFS151 IRFS152 IRFS153 FR9110 1RFR9020 irfb220 IRFS1Z3 251C IRFR020 IRFR120 IRFR121 IRFR210 IRFR212

    F 9212

    Abstract: Z024 irfu9210 IRFR9212
    Text: SAM SUN G E L E C T R O N I C S INC b4E D • 7^4142 IRFR9210/9212 IRFU9210/9212 0G1 2 37 5 414 « S r i G K P-CHANNEL POWER MOSFETS FEATURES • L o w e r R ds ON • • • • • • Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure


    OCR Scan
    PDF 0G12375 IRFR9210/9212 IRFU9210/9212 IRFR9210/U9210 -200V IRFR921 2/U921 IRFR9210/9212 IRFU9210/9212 F 9212 Z024 irfu9210 IRFR9212

    IFRZ44

    Abstract: IRFZ43 KA3842D irf510 switch TRANSISTOR MC7805CT KA336Z Transistor mc7812ct high voltage pnp transistor 700v IRFZ44 PNP KS82C670N
    Text: PRODUCT INDEX ALPHA NUMERIC INDEX Part numbers In BOLD are preferred standard parts. PART NO. 2N3904 2N3906 2N4400 2N4401 2N4402 2N4403 2N5087 2NS088 2NS551 2N6S15 IRF510 IRF511 IRF512 IRF513 IRF520 IRF521 IRF522 IRF523 IRFS30 IRF531 IRF532 IRF533 IRF540 IRF541


    OCR Scan
    PDF 2N3904 2N3906 2N4400 2N4401 2N4402 2N4403 2N5087 2NS088 2NS551 2N6S15 IFRZ44 IRFZ43 KA3842D irf510 switch TRANSISTOR MC7805CT KA336Z Transistor mc7812ct high voltage pnp transistor 700v IRFZ44 PNP KS82C670N