JE1300 Search Results

JE13009

Abstract: mje13008
Contextual Info: C T SGS-THOMSON ^ T l M JE13008 M JE13009 iMiniamiBiugemsiiwiiíeg SILICON NPN SWITCHING TRANSISTORS . JE13008 IS SGS-THOMSON PREFERRED SALESTYPE. DESCRIPTION The JE13008 and JE13009 are multiepitaxial mesa NPN transistor. They are mounted in Jedec TO-220 plastic package, intended for use in

MJE1300S

Abstract: JE13005
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JE13005* Designer’s Data Sheet ‘Motorola Pr»f*rr*d Dcvie« SWITCHMODE Series NPN Silicon Power Transistors These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and

Contextual Info: Æ T S G S - T H O M S O N D ISÌ S IIL[1CTISÌ ÌD©S M JE13007A SILICON NPN SWITCHING TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . NPN TRANSISTOR . HIGH CURRENT CAPABILITY APPLICATIONS . SWITCHING REGULATORS . MOTOR CONTROL DESCRIPTION The JE13007A is silicon multiepitaxial mesa

Contextual Info: S G S -T H O M S O N n o û œ iL ie r a * ® M JE13009 SILICON N P N S W ITC H IN G TR A N SISTO R • SGS-THOMSON PREFERRED SALESTYPE DESCRIPTION The JE13009 is a multiepitaxial mesa NPN transistor. It is mounted in Jedec TO-220 plastic package, intended for use in motor controls,

mje 3007

Abstract: l3007 I3007 je13007 transistor mje13007 equivalent MJE 340 transistor MJE13007D bipolar power transistor vce 600 volt
Contextual Info: MOTOROLA Order this document by JE13007/D SEMICONDUCTOR TECHNICAL DATA M JE13007 M JF13007 Designer’s Data Sheet SWITCH MODE NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF13007 is designed for high-voltage, high-speed power switching

E13007

Abstract: E 13007 F13007 F 13007 SEC E 13007 - 2 transistor MJ 13007 equivalent 13007 je13007 mj 13007 transistor E 13007
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JE13007 M JF13007 Designer’s Data Sheet SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF13007 is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V

JE13009

Contextual Info: MOTOROLA Order this document by JE13009/D SEMICONDUCTOR TECHNICAL DATA M JE13009* D esigner’s Data Sheet ‘ Motorola Preferred Device S W IT C H M O D E S e rie s N PN S ilic o n P o w e r T ra n s is to rs The JE13009 is designed for high-voltage, high-speed power switching inductive

JE1300

Abstract: JE13005 mje130
Contextual Info: MOTOROLA Order this document by JE13005/D SEMICONDUCTOR TECHNICAL DATA M JE13005* D esigner’s Data Sheet ‘ M otorola Preferred Device S W IT C H M O D E S e rie s N PN S ilic o n P o w e r T ra n s is to rs These de vices are de sig ne d fo r h ig h -v o lta g e , h ig h -s p e e d pow er sw itching

JE13009

Abstract: transistor MJE13009
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JE13009* D esigner’s Data Sheet motorola Prtforrod Davie« S W IT C H M O D E Se rie s N PN Silicon Power Transistors The JE13009 is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V

JE13004

Abstract: JE13005 MJE13004
Contextual Info: M JE13004, JE13005 File N u m b e r 1840 4-A Sw itchM aX II Power Transistors High-Voltage N-P-N Types for Off-Line Power Supplies and Other High-Voltage Switching Applications Features: Applications: • Fast sw itching speed m High-voltage ratings: Vccv = 600 V to 700 V

2SK 150A

Abstract: mg100g1al2 2SD1365 2SC2461 B 2sk30 2SC102 C366G b1375 MG15G1AL2 1265N
Contextual Info: ♦D ISC O N TIN U E D TYPE LIST T y p e No. 2N3713 R ecom m end R e p la c e m e n t T y p e N o. - 2N3714 T y p e N o. R ecom m end R e p la c e m e n t T y p e N o. T y p e No. R ecom m end R e p la c e m e n t T y p e N o. 2SA52 2SA1015 2SA282 2SA1015

triac zd 607

Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.

TDA0161 equivalent

Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
Contextual Info: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

transistor 13003G

Abstract: mje13003 equivalent 13003G MJE13003 transistor+13003G
Contextual Info: JE13003 SWITCHMODEt Series NPN Silicon Power Transistor These devices are designed for high−voltage, high−speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulators, Inverters, Motor Controls,

MJE13009AR

Abstract: JE13008 MJE13009A JE13009
Contextual Info: r z T SGS-THOMSON Ä 7 # RaDeæi[Liero iDei JE13008 JE13009 SILICON NPN SWITCHING TRANSISTORS . JE13008 IS SGS-THOMSON PREFERRED SALESTYPE. DESCRIPTION The JE13008and JE13009are multiepitaxial mesa NPN transistor. They are mounted in Jedec TO-220 plastic package, intended for use in

Contextual Info: FI 73232J7 D D gqiO q g • ^ 3 SGS-THOMSON «[B miOT KS 3 - JE13006 JE13007/A S G S-THOMSON 3GE D MOTOR CONTROL, SWITCH REGULATORS DESC RIPTIO N The JE13006, JE13007 and JE13007Aare si­ licon multiepitaxial mesa NPN transistors. They are mounted in Jedec TO-220 plastic package, inten­

EB 13005

Abstract: Transistors 13005 D MJE13004
Contextual Info: 7 ^ 5 ^ 5 3 7 0 0 5 ^ 1 0 5 1 13004 13005 • SGS-THOMSON ¡ILIOTa «! S G S-TH0MS0N MJE MJ E 3DE D HIGH VOLTAGE POWER SWITCH DESCRIPTION The JE13004/13005 are silicon muitiepitaxial me­ sa NPN transistors in JedecTO -220 plastic package particularly intended for switch-mode applications.

e13009

Abstract: E13009 TRANSISTOR equivalent 4000w audio amplifier JE-I3009 4000w inverter circuit 4000w power amplifier equivalent of transistor mje13007 mje13009 equivalent 125VDC to 24 VDC regulator circuit Motorola Bipolar Power Transistor Data
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JE 13005* Designer’s Data Sheet "Motorola Preferred Device SWITCHMODE Series NPN Silicon Power Transistors These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and

20N15

Abstract: 35n05 mje13002 to92 ur3060 AN803 motorola 2N6823 isolated dc-dc mc34063 mje12007 Motorola Switchmode 1 special
Contextual Info: C O N TE N TS Page What Everyone Should Know About Switching Power Supplies In tro du ctio n. Comparison w ith Linear Regulations.

Contextual Info: N AUER PHILIPS/DISCRETE, BSE D • QOlbEEl fl ■ T~3 I Power Devices HIGH SPEED, HIGH VOLTAGE TRANSISTORS cont. V CE(*at) MAX. at lc/lB tftyp at lc (Inductive load) 400V 450V 1,5V at 4A /0.8A 180ns at 4A 850V 1000V 400V 450V 1.5V at 4 A /0.8A 180ns at 4A

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle

2N4293

Abstract: 2N4918 2N4919 2N4920 2N4921 2N4922 2N5190 MJE13002 MJE13003 MJE340
Contextual Info: General Transistor Corporation CASE TO-126 IC MAX = .5-4A V c e o (SUS) = 40-400V POWER TRANSISTORS kCONT (A) MAX VCEO (V) 0.5 1.0 300 40 60 80 300 400 40 40 NOTES: VCEV <V) yes • yes • 600 400 yes 60 60 60 60 yss 80 80 80 80 yes yes yes yes ‘ hfe 01 MHz

JE350

Abstract: je180 MJ13004 TP33C BD325 JE172 BDX48 JE340 bd160 BUT55
Contextual Info: INDUSTRY STANDARD SGS-THOMSON BD135 BD136 BD137 BD138 BD139 BD135 BD136 BD137 BD138 BD139 BD140 BD142 BD144 BD157 BD158 BD140 BD159 BD160 BD165 BD166 BD167 BD159 SGS-THOMSON PAGE NEAREST BD157 BD158 2N5878 BD437 BD438 BD439 BD440 BD441 BD442 BD237 BD238 BD168