KM41C4001 Search Results

Contextual Info: CMOS DRAM KM41C4001B 4M x 1Bit CMOS Dynamic RAM with Nibble Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C4001B is a CMOS highspeed 4,194,304x1 Dynamic Random Access Memory. Its design is optimized for high performance applications

23c2100

Abstract: KM28C64-20 KM28C16-15 KM28C256J15 KM28C64-25 KM28C65-20 KM28C256-15 KM28C64A25 KM28C64J-20 KM28C64A-15
Contextual Info: MEMORY ICs 1. INTRODUCTION 1.1 Dynamic RAM :§ SAMSUNG Electronics FUNCTION GUIDE FUNCTION GUIDE MEMORY ICs 4M bit 4M X 1 KM41C4000-8 - KM41C4000-10 KM41C4000L-8 - KM41C4000L-10 KM41C4001-8 KM41C4002-8 1M X 4 KM41C4001-10 — KM41C4002-10 KM41C4000A-7

Contextual Info: CMOS DRAM KM41C4001A 4 M X 1 Bit CMOS Dynamic RAM with Nibble Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung K M 4 1 C 4 0 0 1 A is a C M OS high speed 4 ,1 9 4 ,3 0 4 bit X 1 Dynamic Random A ccess Memory. Its design is optimized for high perform ance applications

Contextual Info: CMOS DRAM KM41C4001A 4 M X 1 Bit CMOS Dynamic RAM with Nibble Mode FEATURES GENERAL DESCRIPTION Perform ance range: tR A C tC A C tR C 70 ns 20 ns 130ns K M 4 1 C 4 0 0 1 A- 8 80 ns 20 ns 1 50 ns K M 4 1 C 4 0 0 1 A -1 0 100 ns 25 ns 1 80 ns K M 4 1 C 4 0 0 1 A- 7

Contextual Info: CMOS DRAM KM41C4001A 4 M X 1 Bit CMOS Dynamic RAM with Nibble Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung K M 41C 4001A is a CMOS high speed 4 ,1 9 4 ,3 0 4 bit X 1 Dynamic Random Access Memory, Its design is optimized for high performance applications

Contextual Info: 14164B I41C256 I41C25 1C2 1C464 1C466 M41C1000B 1C1O0OBL 1001B 1C1002B 56B 12. KM44C256BL 13. KM44C2§ßB^ 14. KM44C2I 15. 1Ç. Kirnt 1*. KM41C4001 18 llVI4*PKX 2 >.KM44C1Q00/L KM44C1 ft02 KM41 C4pD0A [1C4ÖD0AL Í1C4000ASL 1A 27. 28. 29. 30. 31. 32. 33. 34.

Contextual Info: SAMSUNG ELECTRONICS INC b7E D • 7 ^ 4 1 4 2 GDlSblS 755 KM41C4001B CMOS DRAM 4M x 1Bit C M O S Dynamic RAM with Nibble Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C4001B is a CMOS high speed 4,194,304x1 Dynamic Random Access Memory. Its

KM41C4000AJ

Abstract: KM44C1000AZ "30 pin simm" KM41C4000Z KMM584000A KM41C4001AZ 1Mx4 SOJ 1Mx4 nibble 4Mx1 nibble
Contextual Info: FUNCTION GUIDE 2. Product Guide 2.1 Dynamic RAM Generation 1st Gen. 2nd Gen. 3rd Gen. Part Number Organization Speed ns Technology Feature Package Remark KM41C4000J KM41C4000Z KM 41C4000U KM41C4000LZ KM41C4001J KM41C40012 KM41C4002J KM41C40022 4M x1 4M x1

KM41C4001

Abstract: C4001
Contextual Info: CMOS DRAM KM41C4001 4 M X 1 Bit CMOS Dynamic RAM with Nibble Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM 41C4001 is a high speed CMOS 4 ,1 9 4 ,3 0 4 bit x 1 Dynamic Random Access Memory. Its design is optimized for high performance applications

Contextual Info: SAMSUNG ELECTRONICS INC fc^E D • 7 R b m 4 5 DDlBlll 7T2 « S M Ö K KM41C4001A CMOS DRAM 4 M X 1 Bit CMOS Dynamic RAM with Nibble Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 4 1 C 4 0 0 1 A is a CMOS high speed 4 ,1 9 4 ,3 0 4 bit X 1 Dynamic Random A ccess Memory.

Contextual Info: SAMSUNG E L E C T R O N IC S IN C 42E D B 7^b4142 QQ1Q173 4 • SNÛK CMOS DRAM KM41C4001 Ö w 5 4M X1 Bit CMOS Dynamic RAM with Nibble Mode ‘ FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C4001 is a high speed CMOS 4,194,304 bit X 1 Dynamic Random Access Memory,

DYNAMIC RAM CROSS REFERENCE

Abstract: TC514400 KMM5362000 KMM53220 KMM581000 KMM532200 THMS361020 TC514100 KMM591000 MC-422000A36
Contextual Info: FUNCTION GUIDE 3. Cross Reference 3.1 Dynamic RAM Oig. X1 X4 3.2 Samsung Toshiba Hitachi Fu|ttsu NEC F. Page KM41C4000 TC514100 HM514100 MB814100 MPD424100 MSM514100 Nibble KM41C4001 TC514101 HM514101 MB814101 MPD424101 MSM514101 S. Column KM41C4002 TC514102

Contextual Info: I KM41C4001A ^ CM OS DRAM 4 M X 1 Bit CMOS Dynamic RAM with Nibble Mode FEATURES GENERAL DESCRIPTION Performance range: tR A C tC A C tRC 70ns 20ns 130ns KM 41C4001 A- 8 80ns 20ns 1 50ns K M 41C 4001A -10 100ns 25ns 1 80ns KM 41C4001 A- 7 Nibble Mode operation

Contextual Info: si KM41C4001A CMOS DRAM 4 M X 1 Bit CMOS Dynamic RAM with Nibble Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung K M 41C 4001A is a CMOS high speed 4 ,1 9 4 ,3 0 4 bit X 1 Dynamic Random Access Memory. Its design is optimized for high performance applications

KM23C1010

Abstract: KM23C512 KM44C1000 KM44C1002 KM23C2001 23c16000 KM75C01AP KM416C256-7 KM41C4000A KM75C01AJ
Contextual Info: MEMORY ICs 1. INTRODUCTION 1.1 Dynamic RAM «ä SAM SUN G Electronics FUNCTION GUIDE MEMORY ICs — 4M bit FUNCTION GUIDE 4M X 1 KM41C4000-8 — - KM41C4000-10 KM41C4000L-8 - KM41C4000L-10 KM41C4001-8 - KM41C4001-10 KM41C4002-8 - KM41C4002-10

toshiba 32k*8 sram

Abstract: M5M23C100 M5M5265 seeq DQ2816A M5M23C400 MB832001 HITACHI 64k DRAM TC511000 KM41C464 TC51464
Contextual Info: FUNCTION GUIDE MEMORY ICs 3. CROSS REFERENCE GUIDE 3.1 DRAM Density 64 K X 1 256K X 1 X4 1M X X 4M X X 3.2 Mode Org. 1 4 1 4 Samsung Toshiba Hitachi Fujitsu NEC MSM3764 KM4164 Page Okl F. Page KM41C256 TC51256 Nibble KM41C257 TC51257 HM51256 S. Column KM41C258

KM424C256Z

Abstract: SIMM 30-pin 30-pin SIMM RAM KM41C256P KM44C256bp KM41C1000BJ 257J KM44C256BZ 1K x4 static ram 30-pin simm memory "16m x 8"
Contextual Info: FUNCTION GUIDE MEMORY ICs 2. PRODUCT GUIDE 2.1 Dynamic RAM Part Number Capacity Organization Speed ns Technology Features Packages Remark 64K bit KM4164BP 100/120/150 NMOS Page Mode 16 Pin DIP Now 256K bit KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J

KM44C1000

Contextual Info: TABLE OF CONTENTS I. FUNCTION GUIDE 1. 2. 3. 4. II. Introduction . 11 Product G uide. 14

KM44C1000BJ

Abstract: 4Mx1 4Mx1 nibble
Contextual Info: FUNCTION G U IDE M E M O R Y IC s Dynamic R A M Continued Capacity 4 M bit Part Number Organization Speed(ns) Technology Features Packages Remark KM41C4000BTR 4 Mx1 60/70/80 CMOS Fast Page 20 Pin TSOP-ll(Reverse) Now KM41C4000BLP KM41C4000BU KM41C4000BLZ

20PIN

Abstract: KM41C4000AL-10 KM41C4000AL-8 KM41C4000ASL-10 KM41C4000ASL-7 KM41C4000ASL-8 KM41C4001A-10 KM41C4001A-7 KM41C4001A-8
Contextual Info: - 228CMOS 4 M m & X y 4 « wj&KES ît £ rc TRAC max TRCY inin ns) (ns) TCAD nin (ns) TAH min (ns) C D ynam R A M TWCY (ns) (ns) 1 9 4 % te TP min ( 4 TDH Bill (ns) TRWC ain (ns) V D D or V C C (V) 3 4 X 1 ) M ID D max (mA) 2 À I DD STANDBY (ISB/ISB2) (mA)

KM41C4001-10

Contextual Info: J\M41C4001 CMOS DRAM 4 M X 1 Bit CMOS Dynamic RAM with Nibble Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM 41C4001 is a high speed CMOS 4 ,1 9 4 ,3 0 4 bit X 1 Dynamic Random Access Memory. Its design is optimized tor high performance applications

KM416C256-7

Abstract: KM6264BL-10 KM416C256-10 KM75C01AP80 KM62256BL-10 KM75C02AJ-20 KM75C01AP-35 KM41C4000A KM68512L-7/7L
Contextual Info: MEMORY ICS 1. INTRODUCTION 1.1 Dynamic RAM iS SAM SUNG FUNCTION GUIDE MEMORY ICs — FUNCTION GUIDE 4M bit 4M X 1 KM41C4000A-7 - — KM41C4000AL-7 KM41C4000A-8 KM41C4000A-10 KM41C4000AL-8 KM41C4000AL-10 KM41C4000ASL-7- KM41C4000ASL-8— KM41C4000ASL-10

KM41C1000BJ

Abstract: KM44C256BP KM41C1000BP KM41C1001BP KM41C256P KM44C256BJ km4164 KM41C256J KM44C1000LJ KM41C464Z
Contextual Info: FUNCTION GUIDE MEMORY ICs 2. PRODUCT GUIDE 2.1 Dynamic RAM Part Num ber Capacity 64K b it KM4164BP 256 K b it KM41C256P I [ I Technology Features Packages R em ark 100/120/150 NM OS Page M ode 16 Pin DIP 70/80/100 70/80/100 70/80/100 70/80/100 Fast Page Fast Page

al 232 nec

Abstract: TC55B4257 MB832001 NM9306 eeprom Cross Reference D41264 TC5116100 HN28C256 NM9307 oki cross reference
Contextual Info: CROSS REFERENCE GUIDE MEMORY ICs CROSS REFERENCE GUIDE 1 .DRAM Density 256K Org. X1 x4 1M x1 X4 4M X1 x4 Mode Toshiba Hitachi Fujitsu NEC Oki MSM51C256 F.Page KM41C256 TC51256 HM51256 MB81256 Nibble KM41C257 TC51257 — MB81257 — S. Column KM41C258 TC51258