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    ARCOTEK KM681002BJ-10T

    SRAM ASYNC FAST 1M 128Kx8 5V 32-
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    DigiKey KM681002BJ-10T Reel 5,990 100
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    KM681002BJ-10T Reel 5,990 100
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    Gems Sensors & Controls KM681000BLP-7

    Ls-77700 Series Bent Stem Level Switch |Gems Sensors KM681000BLP-7
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    Newark KM681000BLP-7 Bulk 5
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    Samsung Semiconductor KM681002BJ-10

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    Bristol Electronics KM681002BJ-10 4,464
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    SEC KM681002BJ-10T

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    Bristol Electronics KM681002BJ-10T 2,768
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    Samsung Semiconductor KM681000BLT-7L

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    Bristol Electronics KM681000BLT-7L 227
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    KM6810 Datasheets (270)

    Part ECAD Model Manufacturer Description Curated Type PDF
    KM681000 Samsung Electronics 128K x8 bit Low Power CMOS Static RAM Original PDF
    KM681000 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    KM681000-10 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM681000-10L Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM681000-12 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM681000-12L Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM681000-7 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM681000-7L Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM681000-8 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM681000-8L Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM681000ALGI-10 Samsung Electronics 128K x 8 Bit Static RAM Scan PDF
    KM681000ALGI-10L Samsung Electronics 128K x 8 Bit Static RAM Scan PDF
    KM681000ALGI-7 Samsung Electronics 128K x 8 Bit Static RAM Scan PDF
    KM681000ALGI-7L Samsung Electronics 128K x 8 Bit Static RAM Scan PDF
    KM681000ALPI-10 Samsung Electronics 128K x 8 Bit Static RAM Scan PDF
    KM681000ALPI-10L Samsung Electronics 128K x 8 Bit Static RAM Scan PDF
    KM681000ALPI-7 Samsung Electronics 128K x 8 Bit Static RAM Scan PDF
    KM681000ALPI-7L Samsung Electronics 128K x 8 Bit Static RAM Scan PDF
    KM681000AL-V Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM681000B Samsung Electronics 128K x8 bit Low Power CMOS Static RAM Original PDF
    ...

    KM6810 Datasheets Context Search

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    KM681002C

    Abstract: No abstract text available
    Text: PRELIMINARY KM681002C/CL, KM681002CI/CLI PRELIMINARY CMOS SRAM Document Title 128Kx8 Bit High-Speed CMOS Static RAM 5V Operating Operated at Commercial and Industrial Temperature Range. Revision History Rev. No. History Rev. 0.0 Initial Draft Draft Data Aug. 5. 1998


    Original     		PDF KM681002C/CL, KM681002CI/CLI 128Kx8 32-TSOP2-400F 002MIN KM681002C

    KM681002B

    Abstract: KM681002B-10 KM681002B-8
    Text: PRELIMINARY Preliminary PRELIMINARY CMOS SRAM KM681002B, KM681002BI Document Title 128Kx8 Bit High Speed Static RAM 5V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev No. History Rev. 0.0 Initial release with Design Target.


    Original     		PDF KM681002B, KM681002BI 128Kx8 32-SOJ-300 32-TSOP2-400F 002MIN KM681002B KM681002B-10 KM681002B-8

    km681000clg-5l

    Abstract: KM681000CLP-7 KM681000CLP-7L KM681000CLT-5L KM681000C KM681000CL KM681000CLI KM681000CL-L KM681000CLP7L
    Text: PRELIMINARY KM681000C Family CMOS SRAM Document Title 128K x8 bit Low Power CMOS Static RAM Revision History History Draft Date Remark 0.0 Initial draft November 22, 1995 Design target 0.1 First revision - Seperate read and write at ICC, ICC1 ICC = ICC1 → Read : 15mA, Write : 35mA


    Original     		PDF KM681000C 100ns 0820R) km681000clg-5l KM681000CLP-7 KM681000CLP-7L KM681000CLT-5L KM681000CL KM681000CLI KM681000CL-L KM681000CLP7L

    KM681001-25

    Abstract: KM681001-20 KM681001-35 tl2245 KM681001
    Text: KM681001 CMOS SRAM 128K x 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 20,25,35 ns Max. • Low Power Dissipation Standby (TTL) : 40 mA(Max.) (CMOS): 2 mA(Max.) Operating KM681001-20 : 170 mA(Max.) KM681001-25:150 mA(Max.)


    OCR Scan     		PDF KM681001 KM681001-20 KM681001-25 KM681001 KM681001P: 32-DIP-400 32-SQJ-400 576-bit KM681001-20 KM681001-35 tl2245

    TAA 310A

    Abstract: KM681000BLP-7L 128k x8 SRAM TSOP km681000blp-7 KM681000B KM681000BL KM681000BLE KM681000BL-L
    Text: KM681000B Family CMOS SRAM 128Kx8 bit High Speed CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology: 0.6 um CMOS • Organization : 128K x 8 • Power Supply Voltage : Single 5V +/-10% • Low Data Retention Voltage : 2V Min • Three state output and TTL Compatible


    OCR Scan     		PDF KM681000B 128Kx8 0023b3? KM681OOOÃ 0D23b3Ã TAA 310A KM681000BLP-7L 128k x8 SRAM TSOP km681000blp-7 KM681000BL KM681000BLE KM681000BL-L

    cm 324

    Abstract: KM681002A KM681002A-12 KM681002A-15 KM681002A-20 74114
    Text: PRELIMINARY CMOS SRAM KM681002A 128K x 8 Bit High-Speed CMOS Static RAM GENERAL DESCRIPTION FEATURES • Fast Access Time 12,15,17,20 ns Max. • Low Power Dissipation Standby (TTL) : 30 mA(Max.) (CMOS): 10 mA(Max.) Operating KM681002A-12 : 200 mA (Max.)


    OCR Scan     		PDF KM681002A KM681002A-12 KM681002A-15 KM681002A-17 KM681002A-20 KM681002AJ 32-SOJ-400 KM681002AT 32-TSOP2-400F KM681002A cm 324 KM681002A-12 KM681002A-15 KM681002A-20 74114

    KM681002

    Abstract: No abstract text available
    Text: CMOS SRAM KM681002 131,072 WORD x 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 15, 17, 20ns Max. • Low Power Dissipation Standby CTTL) : 40mA (Max.) ' (CMOS): 10mA (Max.) Operating : KM681002-15: 170mA (Max.) KM681002 -17: 160mA (Max.)


    OCR Scan     		PDF KM681002 KM681002-15: 170mA KM681002 160mA 150mA KM681002J 32-SOJ-400

    Untitled

    Abstract: No abstract text available
    Text: R reïir'ine;-/ CMOS SRAM KM681002B/BL, KM681002BI/BLI 128K X 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION - Fast Access Time 8,10,12»« Max. •• Low Power Dissipation Standby (TTL) : 30* • (Max.) The KM681002B/BL is a 1,048,576-bit high-speed Static Ran­


    OCR Scan     		PDF KM681002B/BL, KM681002BI/BLI KM681002B/BL KM681002B/BL- KM681002B/BLJ 32-SOJ-4QO KM681002B/BLSJ 32-SOJ-300 KM681002B/BLT:

    68 1103

    Abstract: KM681000BL A14F
    Text: CMOS SRAM KM681000BL / L-L 128Kx8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION The KM 681000BUBL-L is a 1,048,576-bit high-speed Static Random Access Memory organized as131,072 words by 8 bits. The device is fabricated using Samsung's advanced


    OCR Scan     		PDF KM681000BL 128Kx8 385mW KM681OOOBLP/BLP-L 600mil) KM681000BLG/BLG-L: 525mil) KM681OOOBLT/BLT-L 0820F) KM681000BLR/BLR-L: 68 1103 A14F

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CMOS SRAM KM681002A 1 2 8 K x 8 B it High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 12,15,17,20 ns Max. • Low Power Dissipation Standby (T T l) : 30 mA(Max.) (CMOS): 10 mA(Max.) Operating KM681002A-12 : 200 mA (Max.)


    OCR Scan     		PDF KM681002A KM681002A-12 KM681002A-15 KM681002A-17 KM681002A-20 KM681002AJ 32-SOJ-4Ã KM681002AT: 32-TSOP2-4QOF KM681002A

    Untitled

    Abstract: No abstract text available
    Text: KM681000BLE / BLE-L CMOS SRAM 128Kx8 Bit Extended Temperature Range Operating SRAM FEATURES GENERAL DESCRIPTION • Extended Temperature Range : -25 to 85°C • Fast Access Time : 70,100 ns Max. • Low Power Dissipation Standby (CM O S): 550nW(Max.)L-Ver.


    OCR Scan     		PDF KM681000BLE 128Kx8 550nW 275pW 385mW KM681000BLGE/BLGE-L 32-pin 525mil) KM681000BLTE/BLTE-L

    Untitled

    Abstract: No abstract text available
    Text: KM681000ALPI/ALGI CMOS SRAM 128Kx8 Bit Static RAM Industrial Temperature Range Operation FEATURES GENERAL DESCRIPTION • In d ustria l Tem perature Range: - 4 0 to 85°C • Fast A ccess Tim e: 70,100 ns (Max.) • Low Power D issip a tio n Standby (C M O S ): 550/jW (Max.) L-\fer.


    OCR Scan     		PDF KM681000ALPI/ALGI 128Kx8 550/jW 275/iW 110mW KM681000ALPI/ALPI-L: 32-Pin KM681000ALGI/ALGI-L: KM68100QALPI/ALGI

    Untitled

    Abstract: No abstract text available
    Text: KM681002 CMOS SRAM 131,072 WORD x 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 15, 17, 20ns Max. • Low Power Dissipation Standby (TTL) : 40mA (Max.) (CMOS): 10mA (Max.) Operating : KM681002-15:170mA (Max.) KM681002 -17: 160mA (Max.)


    OCR Scan     		PDF KM681002 KM681002-15 170mA KM681002 160mA KM681002-20: 150mA KM681002J 32-SOJ-400

    Untitled

    Abstract: No abstract text available
    Text: CMOS SRAM KM681000BL / L-L 128Kx8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 55,70 ns max. • Low Power Dissipation Standby (CMOS): 550(iW (max.) L Version 110fiW (max.) U- Version Operating : 385mW(max.) • Single 5V±10% Power Supply


    OCR Scan     		PDF KM681000BL 128Kx8 110fiW 385mW KM681OQOBLP/BLP-L 600mil) KM681000BLG/BLG-L: 525mil) KM681000BLT/BLT-L 0820F)

    KM681001-25

    Abstract: No abstract text available
    Text: KM681001 CMOS SRAM 1 2 8 K X 8 Bit High-Speed Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 20,25,35ns max. • Low Power Dissipation Standby (TTL) : 40mA (max.) (CMOS) : 2mA (max.) Operating KM681001 -20 :1 70mA(max.) KM681001-25: 150mA(max.)


    OCR Scan     		PDF KM681001 KM681001 KM681001-25: 150mA KM681001-35: 130mA KM681001P 32-DIP-400 KM681001J 32-SQJ-400 KM681001-25

    Untitled

    Abstract: No abstract text available
    Text: F re îir'in & y KM681002B/BL, KM681002BI/BLI CMOS SRAM 128K x 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION - Fast Access Time 8,10,12»» Max. •• Low Power Dissipation Standby (TTL) : 30* • (Max.) (C M O S): 10* (Max.) 1* (Max.) - L-Ver. only


    OCR Scan     		PDF KM681002B/BL, KM681002BI/BLI KM681002B/BL KM681002B/BL- KM681002B/BLJ 32-SOJ-4QO 32-SO J-300

    Untitled

    Abstract: No abstract text available
    Text: KM681002 CMOS SRAM 131,072 WORD x 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 15, 17, 20ns Max. • Low Power Dissipation Standby (TTL) : 40mA (Max.) (CMOS): 10mA (Max.) Operating : KM681002 -15: 170mA (Max.) KM681002-17: 160mA (Max.)


    OCR Scan     		PDF KM681002 KM681002 170mA KM681002-17: 160mA KM681002-20: 150mA KM681002J 32-SOJ-400

    km681000lp

    Abstract: KM681000LG KM681 km681000l
    Text: KM681000L/KM681000L-L CMOS SRAM 128K X 8 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 70, 85, 100, 120ns max. • Low Power Dissipation — Standby (CMOS): 10|jW (typ.) L-Version 5^iW(typ.) L-L Version — O perating : 110mW/MHz (max.)


    OCR Scan     		PDF KM681000L/KM681000L-L 120ns 110mW/MHz 50/jA KM681000LP/LP-L: KM681000LG/LG-L: 681000L/L-L km681000lp KM681000LG KM681 km681000l

    Untitled

    Abstract: No abstract text available
    Text: ADVANCED INFORMATION CMOS SRAM KM681002A 131,072 WORDx8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 12,15,17, 20ns max. • Low Power Dissipation Standby (TTL) : 20mA (max.) (CMOS) : 3mA (max.) Operating : KM681002A-12 : 185mA (max.)


    OCR Scan     		PDF KM681002A KM681002A-12 185mA KM681002A-15: 165mA KM681002A-17: 145mA KM681002A-20 125mA KM681002AJ

    KM681000

    Abstract: A12E
    Text: SAMSUNG SE MICONDUCT OR INC 23E D • 7 cit>Mm2 0000304 5 ■ Advanced Information CMOS SRAM KM681000/KM681000L T - - ^ ' 2 3 1 2 8 K x 8 Bit Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 70, 80, 1 0 0 ,120ns max. • Low Power Dissipation


    OCR Scan     		PDF KM681000/KM681000L 120ns 32-pin 600mll) 450mil) KM681000/L 576-bit KM681000 A12E

    Untitled

    Abstract: No abstract text available
    Text: CMOS SRAM KM681001 1 2 8 K X 8 Bit High-Speed Static RAM FEATURES GENERAL DESCRIPTION • Fast A ccess Tim e 20,25,35ns max. • Low Power Dissipation Standby (TTL) : 40m A (max.) (CMOS) : 2mA (max.) Operating KM681001 -20 : 1 70mA(max.) KM6810 0 1 -2 5 :150mA(max.)


    OCR Scan     		PDF KM681001 KM681001 KM6810 150mA 130mA KM681001P IP-400 KM681001J 32-SQJ-400

    KM681000AL-L

    Abstract: KM681000ALT
    Text: CMOS SRAM KM681000AL/KM681OOOAL-L 128K X8 Bit Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 55,70,85,100,120ns max. • Low Power Dissipation Standby (CMOS): 1 0/j W (typ.) L-Version 5piW (typ.) LL-Version O perating : 35m W (typ.) • Single 5 V ± 1 0 % Power Supply


    OCR Scan     		PDF KM681000AL/KM681OOOAL-L 120ns 81000A KM681OOOALG/ALG-L: KM681000ALT/ALT-L KM681OOOALR/ALR-L: KM681OOOAL/AL-L 576-bit KM681000AL/KM681000AL-L KM681000AL-L KM681000ALT

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY KM681002 CMOS SRAM 131,072 WORD x 8 Bit Highspeed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 15, 17, 20ns Max. • Low Power Dissipation Standby (TTL) : 40mA (Max.) (CMOS): 10mA (Max.) Operating : KM681002J-15:170mA (Max.)


    OCR Scan     		PDF KM681002 KM681002J-15 170mA KM681002J-17: 160mA KM681002J-20: 150mA KM681002J: 32-Pin KM681002

    KM681001A

    Abstract: KM681001A-15 KM681001A-20
    Text: PRELIMINARY KM681001A CMOS SRAM 1 2 8 K x 8 B it High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION > F a st A cce ss T im e 1 5,1 7,20 n s M ax. • Low P o w e r D issip a tio n S ta n d by (T T L) : 3 0 m A (M a x.) (C M O S ): 10 m A (M ax.) O p e ra tin g K M 6 8 1 0 0 1 A -1 5 : 190 m A (M a x.)


    OCR Scan     		PDF KM681001A 128Kx KM681001A-15 KM681001A-17 KM681001A-20 681001AJ: 32-SOJ-4QO KM681001A 576-bit KM681001A-15 KM681001A-20