KM68100 Search Results

KM681001-25

Abstract: KM681001-20 KM681001-35 tl2245 KM681001
Contextual Info: KM681001 CMOS SRAM 128K x 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 20,25,35 ns Max. • Low Power Dissipation Standby (TTL) : 40 mA(Max.) (CMOS): 2 mA(Max.) Operating KM681001-20 : 170 mA(Max.) KM681001-25:150 mA(Max.)

TAA 310A

Abstract: KM681000BLP-7L 128k x8 SRAM TSOP km681000blp-7 KM681000B KM681000BL KM681000BLE KM681000BL-L
Contextual Info: KM681000B Family CMOS SRAM 128Kx8 bit High Speed CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology: 0.6 um CMOS • Organization : 128K x 8 • Power Supply Voltage : Single 5V +/-10% • Low Data Retention Voltage : 2V Min • Three state output and TTL Compatible

cm 324

Abstract: KM681002A KM681002A-12 KM681002A-15 KM681002A-20 74114
Contextual Info: PRELIMINARY CMOS SRAM KM681002A 128K x 8 Bit High-Speed CMOS Static RAM GENERAL DESCRIPTION FEATURES • Fast Access Time 12,15,17,20 ns Max. • Low Power Dissipation Standby (TTL) : 30 mA(Max.) (CMOS): 10 mA(Max.) Operating KM681002A-12 : 200 mA (Max.)

KM681002

Contextual Info: CMOS SRAM KM681002 131,072 WORD x 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 15, 17, 20ns Max. • Low Power Dissipation Standby CTTL) : 40mA (Max.) ' (CMOS): 10mA (Max.) Operating : KM681002-15: 170mA (Max.) KM681002 -17: 160mA (Max.)

Contextual Info: R reïir'ine;-/ CMOS SRAM KM681002B/BL, KM681002BI/BLI 128K X 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION - Fast Access Time 8,10,12»« Max. •• Low Power Dissipation Standby (TTL) : 30* • (Max.) The KM681002B/BL is a 1,048,576-bit high-speed Static Ran­

68 1103

Abstract: KM681000BL A14F
Contextual Info: CMOS SRAM KM681000BL / L-L 128Kx8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION The KM 681000BUBL-L is a 1,048,576-bit high-speed Static Random Access Memory organized as131,072 words by 8 bits. The device is fabricated using Samsung's advanced

Contextual Info: PRELIMINARY CMOS SRAM KM681002A 1 2 8 K x 8 B it High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 12,15,17,20 ns Max. • Low Power Dissipation Standby (T T l) : 30 mA(Max.) (CMOS): 10 mA(Max.) Operating KM681002A-12 : 200 mA (Max.)

Contextual Info: KM681000BLE / BLE-L CMOS SRAM 128Kx8 Bit Extended Temperature Range Operating SRAM FEATURES GENERAL DESCRIPTION • Extended Temperature Range : -25 to 85°C • Fast Access Time : 70,100 ns Max. • Low Power Dissipation Standby (CM O S): 550nW(Max.)L-Ver.

Contextual Info: KM681000ALPI/ALGI CMOS SRAM 128Kx8 Bit Static RAM Industrial Temperature Range Operation FEATURES GENERAL DESCRIPTION • In d ustria l Tem perature Range: - 4 0 to 85°C • Fast A ccess Tim e: 70,100 ns (Max.) • Low Power D issip a tio n Standby (C M O S ): 550/jW (Max.) L-\fer.

Contextual Info: KM681002 CMOS SRAM 131,072 WORD x 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 15, 17, 20ns Max. • Low Power Dissipation Standby (TTL) : 40mA (Max.) (CMOS): 10mA (Max.) Operating : KM681002-15:170mA (Max.) KM681002 -17: 160mA (Max.)

Contextual Info: CMOS SRAM KM681000BL / L-L 128Kx8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 55,70 ns max. • Low Power Dissipation Standby (CMOS): 550(iW (max.) L Version 110fiW (max.) U- Version Operating : 385mW(max.) • Single 5V±10% Power Supply

Contextual Info: KM681000B Family CMOS SRAM Document Title 128K x8 bit Low Power CMOS Static RAM Revision History History Draft Data Remark 0.0 Initial draft for com m ercial product - Com mercial Product only O ctober 28th, 1992 Prelim inary 0.1 - Initial draft for Extended/Industrial Product

KM681001-25

Contextual Info: KM681001 CMOS SRAM 1 2 8 K X 8 Bit High-Speed Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 20,25,35ns max. • Low Power Dissipation Standby (TTL) : 40mA (max.) (CMOS) : 2mA (max.) Operating KM681001 -20 :1 70mA(max.) KM681001-25: 150mA(max.)

Contextual Info: F re îir'in & y KM681002B/BL, KM681002BI/BLI CMOS SRAM 128K x 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION - Fast Access Time 8,10,12»» Max. •• Low Power Dissipation Standby (TTL) : 30* • (Max.) (C M O S): 10* (Max.) 1* (Max.) - L-Ver. only

km681000lp

Abstract: KM681000LG KM681 km681000l
Contextual Info: KM681000L/KM681000L-L CMOS SRAM 128K X 8 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 70, 85, 100, 120ns max. • Low Power Dissipation — Standby (CMOS): 10|jW (typ.) L-Version 5^iW(typ.) L-L Version — O perating : 110mW/MHz (max.)

Contextual Info: ADVANCED INFORMATION CMOS SRAM KM681002A 131,072 WORDx8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 12,15,17, 20ns max. • Low Power Dissipation Standby (TTL) : 20mA (max.) (CMOS) : 3mA (max.) Operating : KM681002A-12 : 185mA (max.)

KM681000

Abstract: A12E
Contextual Info: SAMSUNG SE MICONDUCT OR INC 23E D • 7 cit>Mm2 0000304 5 ■ Advanced Information CMOS SRAM KM681000/KM681000L T - - ^ ' 2 3 1 2 8 K x 8 Bit Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 70, 80, 1 0 0 ,120ns max. • Low Power Dissipation

Contextual Info: CMOS SRAM KM681001 1 2 8 K X 8 Bit High-Speed Static RAM FEATURES GENERAL DESCRIPTION • Fast A ccess Tim e 20,25,35ns max. • Low Power Dissipation Standby (TTL) : 40m A (max.) (CMOS) : 2mA (max.) Operating KM681001 -20 : 1 70mA(max.) KM6810 0 1 -2 5 :150mA(max.)

KM681000AL-L

Abstract: KM681000ALT
Contextual Info: CMOS SRAM KM681000AL/KM681OOOAL-L 128K X8 Bit Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 55,70,85,100,120ns max. • Low Power Dissipation Standby (CMOS): 1 0/j W (typ.) L-Version 5piW (typ.) LL-Version O perating : 35m W (typ.) • Single 5 V ± 1 0 % Power Supply

Contextual Info: PRELIMINARY KM681002 CMOS SRAM 131,072 WORD x 8 Bit Highspeed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 15, 17, 20ns Max. • Low Power Dissipation Standby (TTL) : 40mA (Max.) (CMOS): 10mA (Max.) Operating : KM681002J-15:170mA (Max.)

KM681002C

Contextual Info: PRELIMINARY KM681002C/CL, KM681002CI/CLI PRELIMINARY CMOS SRAM Document Title 128Kx8 Bit High-Speed CMOS Static RAM 5V Operating Operated at Commercial and Industrial Temperature Range. Revision History Rev. No. History Rev. 0.0 Initial Draft Draft Data Aug. 5. 1998

KM681002B

Abstract: KM681002B-10 KM681002B-8
Contextual Info: PRELIMINARY Preliminary PRELIMINARY CMOS SRAM KM681002B, KM681002BI Document Title 128Kx8 Bit High Speed Static RAM 5V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev No. History Rev. 0.0 Initial release with Design Target.

km681000clg-5l

Abstract: KM681000CLP-7 KM681000CLP-7L KM681000CLT-5L KM681000C KM681000CL KM681000CLI KM681000CL-L KM681000CLP7L
Contextual Info: PRELIMINARY KM681000C Family CMOS SRAM Document Title 128K x8 bit Low Power CMOS Static RAM Revision History History Draft Date Remark 0.0 Initial draft November 22, 1995 Design target 0.1 First revision - Seperate read and write at ICC, ICC1 ICC = ICC1 → Read : 15mA, Write : 35mA

KM681001A

Abstract: KM681001A-15 KM681001A-20
Contextual Info: PRELIMINARY KM681001A CMOS SRAM 1 2 8 K x 8 B it High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION > F a st A cce ss T im e 1 5,1 7,20 n s M ax. • Low P o w e r D issip a tio n S ta n d by (T T L) : 3 0 m A (M a x.) (C M O S ): 10 m A (M ax.) O p e ra tin g K M 6 8 1 0 0 1 A -1 5 : 190 m A (M a x.)