pu2211
Abstract: 4835D SiS 961 tp51112 MITAC MPU mitac 8 PU516 SiS961 SERVICE MANUAL tv hyundai w220 foxconn
Text: SERVICE MANUAL FOR 8575A 8 5 7 5 A BY: Sissel Diao TESTING TESTING TECHNOLOGY TECHNOLOGY DEPARTMENT DEPARTMENT // TSSC TSSC Aug . 2002 8575A N/B Maintenance Contents 1. Hardware Engineering Specification …………………………………………………………………
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mPGA478
SiS650
SiS691
SiS301LV
CH7019
PCI1410GGU
uPD72872
IEEE1394
pu2211
4835D
SiS 961
tp51112
MITAC MPU
mitac 8
PU516
SiS961
SERVICE MANUAL tv hyundai w220
foxconn
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vt1631
Abstract: 8375X intel g31 motherboard repair gigabyte g31 MOTHERBOARD SERVICE MANUAL CB-1410 A1 SERVICE MANUAL tv mitsubishi ct 29 b4 est fujitsu fpcap full Socket-462 lg r40 MOTHERBOARD CIRCUIT diagram via vt8235
Text: SERVICE MANUAL FOR 8375X BY: Ally.Yuan Repair Technology Research Department /EDVD Feb.2004 8375X N/B Maintenance CONTENTS 1. Hardware Engineering Specification …………………………………………………………………… 4 1.1 Introduction ……………………………………………………………………………………………………………. 4
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8375X
8375X
KN400A
VT8235
W83L950D
VT1631
VT6307L
intel g31 motherboard repair
gigabyte g31 MOTHERBOARD SERVICE MANUAL
CB-1410 A1
SERVICE MANUAL tv mitsubishi ct 29 b4 est
fujitsu fpcap full
Socket-462
lg r40 MOTHERBOARD CIRCUIT diagram
via vt8235
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2N2222A TO-92
Abstract: 2N4401 NATIONAL SEMICONDUCTOR D41D5 bc857 to 92 D41D4 bc857 to92 2n2222a surface PN3644 MPS6531 BC857
Text: NATL SEMICON] D I S C R E T E ) bflE D • L501130 14S Devices (Volts) Min Min Max BC857 100 125 40 fT @ lc NF P D(Amb) Paekage tnA (MHz) Min mA (HB) Max 800 2.0 300 Typ 10 10 TO-236* (mW) @25°C 350 BC860 100 125 800 2.0 300 Typ 10 3.0 TO-236* 350 BCX71
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L501130
BC857
O-236*
BC860
BCX71
BCX59
BCX79
T0-92
2N2222A TO-92
2N4401 NATIONAL SEMICONDUCTOR
D41D5
bc857 to 92
D41D4
bc857 to92
2n2222a surface
PN3644
MPS6531
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fjt1101
Abstract: FJT1102 1N456A 1N459A FJT1100 1N456 1N457 1N457A 1N458 1N458A
Text: Device No. • Package No. Glass Package V RRM (V) c V F (nA) Min Max @ V R (V) (V) Min @ Max 'f (mA) (PF) Process No. Max 1N456 DO-35 30 25 25 1 40 1N456A DO-35 30 25 25 1 100 1N457 DO-35 70 25 60 1 20 1N457A DO-35 70 25 60 1 100 1N458 DO-35 150 25 125
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1N456
DO-35
1N456A
1N457
1N457A
1N458
fjt1101
FJT1102
1N459A
FJT1100
1N458A
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NDS8936
Abstract: No abstract text available
Text: National Semiconductor July 1996 NDS8936 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These IM-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.
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NDS8936
NDS8936
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NDT2955
Abstract: ACAA TRANSISTOR
Text: June 1996 Nat ionaI Sem iconductor" NDT2955 P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancem ent m od e p o w e r field effect tran sisto rs are produced using N ational's proprietary, high cell density, DMOS te chnology. This
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NDT2955
125-C
SD113G
0D4014D
NDT2955
ACAA TRANSISTOR
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MMBT2907A
Abstract: MMPQ2907 NMT2907 PN2907A PZT2907A T092
Text: PN2907A I MMBT2907A / MMPQ2907/ NMT2907 I PZT2907A D iscrete P O W E R & S ig n a l Technologies National e t S e m i c o n d u c t o r ' " MMBT2907A PN2907A SOT-23 PZT2907A B SOT-223 Mark: 2F NMT2907 MMPQ2907 SOIC-16 ° PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier
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PN2907A
MMBT2907A
PZT2907A
OT-23
OT-223
MMPQ2907
NMT2907
bS0113D
DD40ti30
bS01130
MMPQ2907
NMT2907
PN2907A
PZT2907A
T092
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diode RN 1220
Abstract: NDT455N diode 561
Text: J L J National Semiconductor” July 1 9 9 6 NDT455N N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel lo g ic level enhancem ent m ode p ow er fie ld effect tran sisto rs are produced using N ational's p ro p rie ta ry, hig h cell density, DMOS
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NDT455N
OT-223
LSD113D
00401EÃ
diode RN 1220
NDT455N
diode 561
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NDS9435A
Abstract: No abstract text available
Text: N a tio n a l Semiconductor M ay 1996 " NDS9435A Single P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.
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NDS9435A
NDS9435A
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L50Q
Abstract: BCW65C
Text: S e m i c o n d u c t o r “ BCW65C D iscrete P O W ER & S ig n a l Technologies National BCW65C M a rk : E D NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 500 mA. Sourced from Process 19.
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BCW65C
LS01130
004D673
L50Q
BCW65C
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2n3904 spice model
Abstract: 2N3904 equivalent 2N3904 2n3904 spice model of 2n3904 MMBT3904 2N39041 2N3904 b10 50113G L50113
Text: 2N3904 MMBT3904 SOT-23 B Mark: 1A MMPQ3904 PZT3904 SOT-223 SOIC-16 NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 M H z as an amplifier. Sourced from Process 23.
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2N3904
MMBT3904
MMPQ3904
PZT3904
2N3904
MMBT3904
OT-23
MMPQ3904
SOIC-16
2n3904 spice model
2N3904 equivalent
2n3904 spice
model of 2n3904
2N39041
2N3904 b10
50113G
L50113
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capacitor discharge ignition
Abstract: NB313Y NA61W NB022EY 113D capacitor nb121 NB111 NA61 NB022
Text: NATL SENICOND -CDISCRETE> NATL "äfl SEM ICOND, D F | b S D 1 1 3 0 003SS77 b DISC R ETE 28C 3 5 5 7 7 V/WX National MM Semiconductor J 3 - / / NA61 (NPN) 4 .5 A m p c o m p le m e n ta ry p o w e r tr a n s is to r s NA62(PNP) feature s CO < z IT ! packages and lead coding
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003SS77
O-126
O-22D
O-220
NB022EY
NB123EY
NR001E
NB113EY
NB111EY
capacitor discharge ignition
NB313Y
NA61W
113D capacitor
nb121
NB111
NA61
NB022
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2NS087
Abstract: 2N5087 NATIONAL SEMICONDUCTOR 2NS086 2N5086 2N5087 MMBT5086 MMBT5087 T092 0013581
Text: 2N5086 / MMBT508612N50871 MMBT5087 Discrete POWER & Sign al Technologies _ Na tional Semiconductor~ 2N5086 2N5087 MMBT5086 MMBT5087 PNP General Purpose Amplifier T h is d evice is d esigned fo r low level, high gain, low noise general p u rp o s e a m p lifie r a p p lic a tio n s a t c o lle c to r c u rre n ts to 50 mA.
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2N5086
2N5087
MMBT5086
MMBT5087
OT-23
b501130
bSD113D
2NS087
2N5087 NATIONAL SEMICONDUCTOR
2NS086
2N5087
MMBT5087
T092
0013581
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BC817-40
Abstract: BC817-25 DD40
Text: B C 8 1 7 -2 5 B C 8 1 7 -4 0 BC817-25 / BC817-40 tu D iscrete P O W E R & S ig n a l Technologies , National Semiconductor' NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.2 A.
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BC817-25
BC817-40
b5D113G
bSQ113Q
BC817-40
DD40
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NDT451AN
Abstract: u1130
Text: July 1996 National Semiconductor" N D T451AN N-Channel Enhancement Mode Field Effect Transistor F e a tu re s G e n e ra l D e s c rip tio n These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology,
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NDT451AN
OT-223
bSQ1130
NDT451AN
u1130
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BF244A
Abstract: BF244B BF244C "N-Channel JFET" BF244 OF BF244A OR B N-CHANNEL JFET
Text: " BF244A BF244B BF244C BF244A / BF244B / BF244C u ct o r D isc re te POW ER &. S ig n a l T ech n ologies N-Channel JFET RF Amplifier This device is designed for RF amplifier and mixer and applications operating up to 450 MHz, and or analog switching requiring low
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BF244A
BF244B
BF244C
bSD113D
BF244C
"N-Channel JFET"
BF244
OF BF244A OR B N-CHANNEL JFET
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L5013
Abstract: No abstract text available
Text: RL-5011 RL-5012, RL-5013, RL-5014 COMMON MODE TOROIDS VERTICAL MOUNT Comm on Mode Toroids are most effective in filte rin g supply lines having in-phase signals of equal amplitude. Allows equipment to meet FC C and e le c tric a l ra d ia tio n specifications. Used in conjunction
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RL-5011
RL-5012,
RL-5013,
RL-5014
L-5013-7
L-5014-17-9
L-5013-3
L-5013-5
L-5013-2
L-5013-4
L5013
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T35 diode
Abstract: diode T35 high voltage diode T35 L501130 FDH3595 MMBD7000 MMBD1501-1505
Text: S e m i c o n d u c t o r " FDH3595 & Discrete POW ER & Signal Technologies „ . . National FDH3595 High Conductance Low Leakage Diode Sourced from Process 1M. See MMBD1501-1505 for characteristics. Absolute Maximum Ratings* Symbol TA = 25*C unless otherwise noted
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FDH3595
MMBD1501-1505
L501130
0040Sb3
T35 diode
diode T35
high voltage diode T35
FDH3595
MMBD7000
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NDS9400A
Abstract: No abstract text available
Text: Nat i ona I May 1996 Semiconductor" NDS9400A Single P-Channel Enhancement Mode Field Effect Transistor Features General Description These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.
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NDS9400A
bS0113D
NDS9400A
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NDB4050L
Abstract: NDP4050L
Text: National A p r il 1 9 9 6 Semiconductor~ * NDP4050L / NDB4050L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These Features lo g ic level N-Channel enhancem ent m ode • 15A, 50V. RDSI0NI = 0.1Q @ V GS = 5V tran sisto rs are produced using
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NDP4050L
NDB4050L
hSD1130
bS01130
004D233
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tls74
Abstract: TIS74 3tb 40 TIS73
Text: Discrete POWER & Signal Technologies Semiconductor“ TIS73 TIS74 N-Channel General Purpose Amplifier This device is designed for low level analog switching, sample and hold circuits and chopper stabalized amplifiers. Sourced from Process 54. Absolute Maximum R3tInCJS
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TIS73
TIS74
LSD1130
tls74
TIS74
3tb 40
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BF244A
Abstract: "N-Channel JFET" bf244c BF244B jfet s00 BF244
Text: " BF244A BF244B BF244C BF244A / BF244B / BF244C uctor D iscrete POWER &. Signal Technologies N-Channel JFET RF Amplifier This device is designed for RF amplifier and mixer and applications operating up to 450 MHz, and or analog switching requiring low capacitance. Sourced from Process 50.
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BF244A
BF244B
BF244C
L501130
"N-Channel JFET"
bf244c
jfet s00
BF244
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NDS9953A
Abstract: No abstract text available
Text: Na t i o n a l Semiconductor" M ay 1996 NDS9953A Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.
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NDS9953A
bSG113D
NDS9953A
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