LCCC32 Search Results

M27C1001

Abstract: M27V101 PLCC32 TSOP32
Contextual Info: M27V101 LOW VOLTAGE 1 Megabit 128K x 8 UV EPROM and OTP ROM LOW VOLTAGE READ OPERATION: 3V to 5.5V ACCESS TIME: 120, 150 and 200ns LOW POWER ”CMOS” CONSUMPTION: – Active Current 15mA – Standby Current 20µA SMALL PACKAGES for SURFACE MOUNTING: – Ceramic: LCCC32W, ultra-thin 2.8mm (max)

M27C1001

Abstract: M27V101 PLCC32 TSOP32
Contextual Info: M27V101 LOW VOLTAGE 1 Megabit 128K x 8 UV EPROM and OTP ROM LOW VOLTAGE READ OPERATION: 3V to 5.5V ACCESS TIME: 120, 150 and 200ns LOW POWER ”CMOS” CONSUMPTION: – Active Current 15mA – Standby Current 20µA SMALL PACKAGES for SURFACE MOUNTING: – Ceramic: LCCC32W, ultra-thin 2.8mm (max)

M27C2001

Abstract: M27V201 PLCC32 TSOP32
Contextual Info: M27V201 LOW VOLTAGE 2 Megabit 256K x 8 UV EPROM and OTP ROM LOW VOLTAGE READ OPERATION: 3V to 5.5V ACCESS TIME: 200 and 250ns LOW POWER ”CMOS” CONSUMPTION: – Active Current 15mA – Standby Current 20µA SMALL PACKAGES for SURFACE MOUNTING: – Ceramic: LCCC32W, ultra-thin 2.8mm (max)

M27C4001

Abstract: M27V401 PLCC32 TSOP32
Contextual Info: M27V401 LOW VOLTAGE 4 Megabit 512K x 8 UV EPROM and OTP EPROM LOW VOLTAGE READ OPERATION: 3V to 5.5V FAST ACCESS TIME: 120ns LOW POWER ”CMOS” CONSUMPTION: – Active Current 15mA – Standby Current 20µA PACKAGES for SURFACE MOUNTING: – Ceramic: LCCC32W, ultra-thin 2.8mm (max)

M27C2001

Abstract: M27V201 PLCC32 TSOP32
Contextual Info: M27V201 LOW VOLTAGE 2 Megabit 256K x 8 UV EPROM and OTP ROM LOW VOLTAGE READ OPERATION: 3V to 5.5V ACCESS TIME: 200 and 250ns LOW POWER ”CMOS” CONSUMPTION: – Active Current 15mA – Standby Current 20µA SMALL PACKAGES for SURFACE MOUNTING: – Ceramic: LCCC32W, ultra-thin 2.8mm (max)

M27C1001

Abstract: EEPROM PDIP32 PLCC32 TSOP32
Contextual Info: M27C1001 1 Mbit 128Kb x8 UV EPROM and OTP EPROM 5V ± 10% SUPPLY VOLTAGE in READ OPERATION FAST ACCESS TIME: 35ns LOW POWER CONSUMPTION: – Active Current 30mA at 5Mhz – Standby Current 100µA PROGRAMMING VOLTAGE: 12.75V ± 0.25V PROGRAMMING TIME: 100µs/byte (typical)

Contextual Info: M27C2001 2 Mbit 256Kb x 8 UV EPROM and OTP EPROM • 5V ± 10% SUPPLY VOLTAGE in READ OPERATION ■ FAST ACCESS TIME: 55ns ■ LOW POWER CONSUMPTION: - Active Current 30mA at 5MHz - Standby Current 1OOjaA ■ PROGRAMMING VOLTAGE: 12.7 5 V ± 0.25V FDIP32W (F)

Contextual Info: £ ÿ j S G S ’T H O M SO N leænLimowigs M27C2001 2 Megabit 256K x 8 UV EPROM and OTP ROM • VERY FAST ACCESS TIME: 70ns ■ COMPATIBLE with HIGHSPEED MICROPROCESSORS, ZERO WAIT STATE ■ LOW POWER ’’CMOS” CONSUMPTION: - Active Current 30mA - Standby Current 100(j.A

Contextual Info: /= 7 S G S -TH O M S O N M27C4001 CMOS 4 Megabit 512K x 8 UV EPROM and OTP ROM • VERY FAST ACCESS TIME: 80ns ■ CO M PATIBLE W ITH HIGH SPEED M IC R O ­ PROCESSORS, ZERO W AIT STATE ■ LOW POWER “C M O S” CONSUMPTION: - Active Current 50m A at 5MHz

Contextual Info: SGS-THOMSON n»i Li TO K!ID®i M27V101 LOW VOLTAGE 1 Megabit (128K x 8 UV EPROM and OTP ROM • LOW VOLTAGE READ OPERATION: 3V to 5.5V ■ ACCESS TIME: 120,150 and 200ns ■ LOW POWER "CMOS" CONSUMPTION: - Active Current 15mA - Standby Current 20|*A ■ SMALL PACKAGES for SURFACE

Contextual Info: n=ZSGS-THOMSON ^ 7 # . M27V401 EiilDISIMSJIllUKS'D'I^ORaDlgi LOW VOLTAGE 4 Megabit 512K x 8 UV EPROM and OTP EPROM NOT FOR NEW DESIGN • LOW VOLTAGE READ OPERATION: 3V to 5.5V ■ FAST ACCESS TIME: 120ns ■ LOW P O W E R ’’CMOS” CONSUMPTION: - Active Current 15mA

Contextual Info: /= T ^ 7 i. S G S -T H O M S O N H [l g[S ilLIO T® iD (gi M 27C 2001 2 Megabit (256K x 8 UV EPROM and OTP EPROM • FAST ACCESS TIME: 55ns ■ LOW POWER ’’CMOS” CONSUMPTION: - Active Current 30mA - Standby Current 100|iA ■ PROGRAMMING VOLTAGE: 12.75V

TSOP40 Flash

Abstract: m48z32y M27V512 FDIP24W M27128A M2716 M27256 M2732A M27512 M2764A
Contextual Info: MEMORY PRODUCTS SELECTOR GUIDE A C) NMOS UV EPROM, 5V Operation Size 16 Kb 32 Kb 64 Kb 128 Kb 256 Kb 512 Kb Ref M2716 M2732A M2764A M27128A M27256 M27512 Description 16 Kb x8), 350 - 450ns, NMOS 32 Kb (x8), 200 - 450ns, NMOS 64 Kb (x8), 180 - 450ns, NMOS

FDIP24W

Abstract: M27128A M2716 M27256 M2732A M27512 M2764A M27C256B M27C64A M29F040
Contextual Info: MEMORIES and SMARTCARD PRODUCTS NON VOLATILE MEMORIES UV & OTP EPROM, 5V Operation Size References Description Package 16 Kb M2716 16 Kb x8 , 350 - 450ns, NMOS FDIP24W 32 Kb M2732A 32 Kb (x8), 200 - 450ns, NMOS FDIP24W M2764A 64 Kb (x8), 180 - 450ns, NMOS

LCCC3

Abstract: M27C1001 PLCC32 TSOP32
Contextual Info: M27C1001 1 Megabit 128K x 8 UV EPROM and OTP ROM VERY FAST ACCESS TIME: 45ns COMPATIBLE with HIGH SPEED MICROPROCESSORS, ZERO WAIT STATE LOW POWER ”CMOS” CONSUMPTION: – Active Current 30mA – Standby Current 100µA PROGRAMMING VOLTAGE: 12.75V ELECTRONIC SIGNATURE for AUTOMATED

ef6802

Abstract: General application principles EF4442 EF4442 EF4442PVZ63 EF680 LCCC32 RT307 atmel 916
Contextual Info: Features • • • • • • • • • Four Independent Receivers OneTransmitter in A Mode Direct 6800 Microprocessor Interface 8-bit Data Bus ARINC Interface: “1” and “0” Lines, RZ Code Software Label Control in A Mode Parity Control: Odd or No Parity

FZJ 131

Abstract: FZJ 135
Contextual Info: FZJ SGS-1H0MS0N ^7# M27V101 OMD [Si©i!Li©'if^ Q R!lD(gI LOW VOLTAGE CMOS 1 Megabit (128K x 8) UV EPROM and OTP ROM ABBREVIATED DATA • LOW VOLTAGE READ OPERATION - Vcc Range: 3V to 5.5V (Ta = 0 to 70°C) - Vcc Range: 3.2V to 5.5V (TA = -4 0 to 85°C)

Contextual Info: r Z J SGS-THOMSON M27V201 ^ T # . OKODÊlSûilLIllOTOliSIDÊi LOW VOLTAGE CMOS 2 Megabit 256K x 8 UV EPROM and OTP ROM ABBREVIATED DATA • LOW VOLTAGE READ OPERATION - Vcc Range: 3V to 5.5V (Ta = 0 to 70°C) - Vcc Range: 3.2V to 5.5V (TA = -40 to 85°C)

Contextual Info: SGS-THOMSON M27V101 LOW VOLTAGE CMOS 1 Megabit 128K x 8 UV EPROM and OTP ROM ADVANCE DATA • LOW VOLTAGE READ OPERATION - Vcc Range: 3V to 5.5V (T a = 0 to 70°C) - V cc Range: 3.2V to 5.5V (T a = - 4 0 to 85°C) ■ ACC ESS TIME: 200 and 250ns ■ LOW POWER "CMOS" CONSUMPTION:

Contextual Info: SGS-THOMSON ^ 7 # M27C2001 [j* ^ Q i[L i(§ » M (g S CMOS 2 Megabit (256K x 8) UV EPROM and OTP ROM • VERY FAST ACCESS TIME: 80ns ■ COMPATIBLE WITH HIGH SPEED MICRO­ PROCESSORS, ZERO WAIT STATE ■ LOW POWER "CMOS" CONSUMPTION: - Active Current 30mA

PLCC32

Abstract: M27C M27W101 M27W102 M27W201 M27W401 M27W402 M27W512 M27W801 TSOP32
Contextual Info: OTP and UV EPROMs New Expanded Range ADVANCED PRODUCTS - DEPENDABLE SOLUTION The ST range of OTP and UV EPROMs is one of the widest in the world. Densities from 16 Kbit to 32 Mbit, plastic and ceramic windowed packages - both surface mounting and through hole standard 5V and low voltage, 3V, operation.

GL 6201

Abstract: PLCC32 M27C M27W101 M27W102 M27W201 M27W401 M27W402 M27W512 M27W801
Contextual Info: OTP and UV EPROMs New Expanded Range ADVANCED PRODUCTS - DEPENDABLE SOLUTION The ST range of OTP and UV EPROMs is one of the widest in the world. Densities from 16 Kbit to 32 Mbit, plastic and ceramic windowed packages - both surface mounting and through hole standard 5V and low voltage, 3V, operation.

M27C2001

Abstract: M27V201 M27W201 PLCC32 TSOP32
Contextual Info: M27V201 LOW VOLTAGE 2 Megabit 256K x 8 UV EPROM and OTP EPROM DATA BRIEFING LOW VOLTAGE READ OPERATION: 3V to 5.5V FAST ACCESS TIME: 120ns LOW POWER "CMOS" CONSUMPTION: – Active Current 30mA – Standby Current 100µA PROGRAMMING VOLTAGE: 12.75V ELECTRONIC SIGNATURE for AUTOMATED

m27c1001 plcc32

Abstract: SGS M27C1001 M27C1001 PDIP32 PLCC32 TSOP32
Contextual Info: M27C1001 1 Megabit 128K x 8 UV EPROM and OTP EPROM FAST ACCESS TIME: 45ns LOW POWER ”CMOS” CONSUMPTION: – Active Current 30mA – Standby Current 100µA PROGRAMMING VOLTAGE: 12.75V ELECTRONIC SIGNATURE for AUTOMATED PROGRAMMING PROGRAMMING TIMES of AROUND 12sec.