LH538300C Search Results

Contextual Info: LH538300C CMOS 8M 1M x 8 Mask-Programm able ROM PIN CONNECTIONS FEATURES • 1,048,576 words x 8 bit organization • Access time: 150 ns (MAX.) 3 2 -P IN D IP 3 2 -P IN S O P T O P V IE W A 19C • Low-power consumption: Operating: 275 mW (MAX.) Standby: 550

LH538300CD

Abstract: 32DIP 32-PIN 32TSOP LH538
Contextual Info: LH538300C CMOS 8M 1M x 8 Mask-Programmable ROM FEATURES • 1,048,576 words × 8 bit organization • Access time: 150 ns (MAX.) PIN CONNECTIONS 32-PIN DIP 32-PIN SOP • Low-power consumption: Operating: 275 mW (MAX.) Standby: 550 µW (MAX.) • Static operation

536G

Abstract: LH534600
Contextual Info: MEMORIES • Mask ROMs Process Capacity * Configuration words X bits Pinout Access time Model No. (ns) MIN. Supply current (mA) MAX. Supply voltage (V) (ns) MAX. User's No. Cycle tima Package 256k 32k X 8 J LH53259D/N/T L H 5359X X 150 25 5 ± 10% 28DIP/28SOP/28TSOP(I)

lh57257

Abstract: IR2E31 IR2E01 IR2C07 IR2E27 IR2E24 IR2E19 IR2E31A IR3n06 IR2E02
Contextual Info: Index Model No. ARM7D CPU Core Bi-CMOS 1 27 40,42 _ _ CMOS CMOS CMOS CMOS CMOS 4A 5A 8 A AH D ID1 Series ID2 Series 40,42 40.42 40,42 40,42 40 B ü.’1*"! 14,15 14 m IR2339 IR2403 IR2406 IR2406G IR2410 IR2411 IR2415 IR2419 IR2420 IR2422 IR2425 IR2429

LH231G

Abstract: lh5348 LH538b LH2326 lh5s4 LHMN5 lh5359 lh5348xx lh537 LH235
Contextual Info: MEMORIES ★Under development • M ask ROMs SlpÉHRfi Bonflgmllan jvorai x d m i NMOS <"^g|g|ï|ïi£- User1* No. sssysr Sllpjiijp 1 currant mA MAX. ■ Paefcagfe ft- • 64k 8k x 8 LH2389D LH2369XX 200 60 5 ± 10% 28DIP 128k 16k x 8 LH23128D LH2326XX 200

flash 64m

Contextual Info: MEMORIES Mask ROMs C a p a c ity Access time C o nfig u ra tio n 120ns 100ns 80ns 150ns 256kj I 32k x 8 ] LH53259 12k I 64k x 8 LH53517 128k x 8 LH530800A LH531V00 1M LH531024 64k x 16 i LH532100B-1 256k x 8 ! LH532100B 2M JEDEC standard EPROM pinout 128k x 161

48 tsop flash pinout

Abstract: LH23512
Contextual Info: MEMORIES Mask ROMs ^Under development Capacity Pinout Model No. Configuration Access time ns 55 1 64k !- 1 8k x 8 128k 16k x ! 256k 32k x 8 |- -) [ 512k 64k x 8 b — I 80 100 120 150 200 Package 250 500 □ LH2369 28 LH23255 28 □ LH53259 28 28 38(1)

IR2E27A

Abstract: IR2C53 IR2E02 IR2E27 IR2E10 IR3N34 IR2E31A IR2E01 IR2C07 ir2e31
Contextual Info: lndeX Model No. ARM7D CPU Core28,32,33 ARM7DM 28,33 CMOS CMOS CMOS CMOS 76 5A A F G 44 44 44 44 ID1 series ID2 series ID3 seríes ID21K064 ID21K128 ID21K256 ID21K512 ID21M010 ID21M015 ID21M020 ID21M040 ID22K256 ID22K512 ID22M010 ID22M020 ID22M040 ID22M080

Contextual Info: CMOS 8M 1M x 8 MROM FEATURES • 1,048,576 words x 8 bit organization • Access time: 150 ns (MAX.) PIN CONNECTIONS 32-PIN DIP 32-PIN SOP TOP VIEW f Aig IZ • Low-power consumption: Operating: 275 mW (MAX.) Standby: 550 [iW (MAX.) • Static operation

Contextual Info: CMOS 8M 1M x 8 MROM FEATURES • 1,048,576 words x 8 bit organization • Access time: 150 ns (MAX.) PIN CONNECTIONS 32-PIN DIP 32-PIN SOP TOP VIEW s • Low-power consumption: Operating: 275 mW (MAX.) Standby: 550 (iW (MAX.) • Static operation • TTL compatible I/O