LOW NOISE FET NEC U Search Results

2SK281

Abstract: 203l2 NE218 NE21889 NE21800
Contextual Info: NEC/ L427414 OOOlblH Q 1SE D CALIFORNIA NEC T - 3 ,h lS LOW NOISE X-BAND G aAs MESFET NE21800 NE21889 FEATURES DESCRIPTION AND APPLICATIONS • V E R Y H IG H fmax: 60 G H z The NE218 is a 1 pm recessed gate gallium arsenide GaAs n-channel field effect transistor (FET). Offering low noise figure

Contextual Info: NEC SUPER LOW NOISE HJ FET FEATURES NE329S01 & a s s o c ia t e d GAIN vs. FREQUENCY n o is e f ig u r e -• SUPER LOW NOISE FIGURE: 0.35 dB Typ at f = 12 GHz • HIGH ASSOCIATED GAIN:

Contextual Info: NEC ULTRA LOW NOISE PSEUDOMORPHIC HJ FET l>,co^ uu FEATURES NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY Voss 2 V, Ids = 10 mA • VERY LOW NOISE FIGURE: NF = 0.6 dB typical at f = 12 GHz • HIGH ASSOCIATED GAIN: G a = 11.0 dB typical at f = 12 GHz m •

NE334S01

Contextual Info: PRELIMINARY DATASHEET NEC C BAND SUPER LOW NOISE HJ FET NE334S01 FEATURES_ MAXIMUM AVAILABLE GAIN, FORWARD INSERTION GAIN vs. FREQUENCY • VERY LOW NOISE FIGURE: 0.25 dB TYP at 4 GHz • HIGH ASSOCIATED GAIN: 16.0 dB TYP at 4 GHz • GATE WIDTH: 280 jim

sn 7441

Contextual Info: NEC SUPER LOW NOISE HJ FET FEATURES_ NE33200 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY • VERY LOW NOISE FIGURE: V ds = 2 V, Ids = 10 m A 0 75 dB typical at 12 GHz • HIGH ASSOCIATED GAIN: 10.5 dB Typical at 12 GHz • GATE LENGTH: 0.3 nm • GATE WIDTH: 280 |j.m

2SK609

Contextual Info: NEC NE710 SERIES LOW NOISE Ku-K BAND GaAs FET NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY FEATURES VERY HIGH m ax :90 GHz LOW NOISE FIGURE m T3 HIGH ASSOCIATED GAIN Lg = 0 .3 nm , W g = 2 8 0 jxm N+ CONTACT LAYER (Triple Epitaxial Technology PROVEN RELIABILITY AND STABILITY

840-SL

Abstract: NE32984D U/25/20/TN26/15/850/NE32984D
Contextual Info: NEC ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32984D NOISE FIGURE & ASSOCIATED FEATURES GAIN v« FRFOMFWrV Vos = 2 V, lo i a 10 IÎ1A • VERY LOW NOISE FIGURE: 0.40 d 8 Typical at 12 GHz • HIGH ASSOCIATED GAIN: 12.5 0 8 Typical at 12 GHz ai • La i 0.20 pm . W o • 200 nm

1400

Abstract: NE202 circuit NE202 NE20200 NE20248 NE20283A NE202XX W2603
Contextual Info: NEC/ CALIFORNIA 1SE D bM2741M OGOIS^G T-31-¿S' 5 - N E i* i» ULTRA LOW NOISE K-BAND HETERO JUNCTION FET FEATURES NE202 SERIES OUTLINE DIMENSIONS • LOW NOISE FIGURE: 1 dB TYP at f = 12 GHz NE202XX 1.2 dB TYP at f = 12 GHz (NE202XX-1.4)

NE70083

Abstract: 2SK353 DS 3107 NE700 2sk mesfet 1S121 2sk 353
Contextual Info: N E C / CALIFORNIA 1SE NEC D fa427414 O G O l b S l 1 T - 3 1-2 5 " LOW NOISE Ku-K BAND GaAs MESFET NE700 SERIES FEATURES DESCRIPTION AND APPLICATIONS • LOW C O S T The NE700 is a low cost GaAs FET featuring low noise figures and high associated gains thru 18 GHz.

NE202 circuit

Abstract: NE202 NE20200 NE20248 NE20283A NE202XX 1400 88 pm BH574
Contextual Info: L NEC N E C / 1SE D CALIFORNIA • b427414 OQOISÌO T'3l -¿S' S ULTRA LOW NOISE K-BAND HETERO JUNCTION FET NE202 SERIES OUTLINE DIMENSIONS FEATURES • LOW NOISE FIGURE: 1 dB TYP at f = 12 GHz NE202XX 1.2 dB TYP at f = 12 GHz (NE202XX-1.4) 1.8 dB TYP at f = 18 GHz (NE20248)

NE32000

Abstract: NE32084 NE32083A
Contextual Info: E C/ C A L I F O R N I A NEC 1SE D b42?m4 OQOlbOS r - 3 / - 2 S' 3 NE32000 NE32083A NE32084 LOW COST/LOW NOISE K-BAND HETERO JUNCTION FET OUTLINE DIMENSIONS FEATURES NE32000 CHIP • LOW NOISE FIGURE 1.2 dB TYP at f = 12 GHz (NE32083A) 1.3 dB TYP at f = 12 GHz (NE32084)

nec 2412

Abstract: NE24283A 2412 NEC
Contextual Info: N E C / C A L I F OR N I A S bE D bM2?mM 00QH2S2 5Û3 » N E C C T ^ |.2 £ NEC ULTRA LOW NOISE NE24283A PSEUDOMORPHIC HJ FET OUTLINE DIMENSIONS Units In mm FEATURES OUTLINE 83A IMlOS • VERY LOW NOISE FIGURE: 0.6 dB typical at 12 GHz • HIGH ASSOCIATED GAIN:

Nec 4558 c

Abstract: NE33284A-SL NE33284AS 33284a
Contextual Info: NEC SUPER LOW NOISE HJ FET FEATURES NE33284A NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY Vds = 2 V, Ids = 10 mA V ER Y LO W NO ISE FIG URE: 0.8 dB typical at 12 GHz HIG H A S S O C IA T E D G AIN : 10.5 dB Typical at 12 GHz m G A TE LE N G T H : 0.3 urn «

NE33284AS

Abstract: FR 401
Contextual Info: NEC SUPER LOW NOISE HJ FET FEATURES NE33284A N O IS E FIG U R E & A S S O C IA T E D G A IN vs. F R E Q U E N C Y Vos = 2 V, I d s = 10 m A VERY LOW NOISE FIGURE: 0.8 dB typical at 12 GHz HIGH ASSO C IA TED GAIN: 10.5 dB Typical at 12 GHz CD GATE LENGTH: 0.3 nm

NE202

Abstract: NE20300 NE20383A
Contextual Info: E C/ C A L I F O R N I A NEC 1SE D b4E7414 ODOISTT 1 NE20300 NE20383A ULTRA LOW NOISE Ku-BAND HETERO JUNCTION FET OUTLINE DIMENSIONS FEATURES • L O W N O IS E F IG U R E 1.25 d B T Y P at f = 12 G H z NE20300 CHIP (Units in pm) • H IG H A S S O C IA T E D GAIN

PC4072

Abstract: c4072
Contextual Info: V f T C ¿/PC4072 DUAL J-FET INPUT LOW-NOISE o p e r a t i o n a l a m p lif ie r NEC Electronics Inc. Pin Configurations Description T he J-FE T in p u t o p e ra tio n a l a m p lifie rs o f the/L/PC4072 are designed as lo w -n o ise versions o f the //PC4082.

2SK314

Abstract: 4511 gm JE 33 5551a tt 22
Contextual Info: NEC j m*Ti\rx A J u n c tio n Field E ffe c t T ra n s is to r 2SK314 m Silicon N-Channel Junction FET Audio Frequency Low Noise Amplifier Industrial Use Ü - E 1 /P A C K A G E DIM ENSIO NS ^ « /F E A T U R E S Unit : mm o ® iß « T " to NF = 1.0 dB TYP. (VDs = 10 V,Id = 5 mA,RG= 1.0 kQ,f=100 Hz)

PFA113A

Abstract: NEC 2705 opto PFA1AN PFA141B PFA122A PFA141A PFA141E ps7200 PFA112A PFA222A
Contextual Info: OPTICAL COUPLED MOS FET SELECTION GUIDE September 2000 [MEMO] 2 Selection Guide P11633EJAV0SG00 CAUTION Within this device there exits GaAs Gallium Arsenide material which is a harmful substance if ingested. Please do not under any circumstances break the

1658 NEC

Abstract: SW SPDT FRS transceiver SW-SPDT upc8112tb 2SC5288 NE52418 RF basics NE5510279A discrete LNA D
Contextual Info: RF AND MICROWAVE DEVICES SELECTION GUIDE − APPLICATION SYSTEM − April 2003 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .

IC3208

Contextual Info: DATA SHEET_ NEC GaAs INTEGRATED CIRCUIT uPG105B-1 S-BAND LOW NOISE AMPLIFIER DESCRIPTION The ¿ iP G 1 0 5 B -1 GaAs Am plifier has a very low noise characteristics in the S-band. This device has amplifiers to achieve high linear gain.

very simple walkie talkie circuit diagram

Abstract: blf278 models walkie talkie circuit diagram simple walkie talkie circuit diagram SiGe HBT GAIN BLOCK MMIC AMPLIFIER N6 BF245c spice model smd TRANSISTOR code marking 8K MOBILE jammer GSM 1800 MHZ BSS83 spice model smd TRANSISTOR code marking 7k sot23
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double TRANSISTOR SMD MARKING CODE mc

Abstract: walkie talkie circuit diagram very simple walkie talkie circuit diagram smd TRANSISTOR code marking 8K smd m5 transistor 6-pin walkie talkie Transceiver IC mesfet lnb toshiba smd marking code transistor blf574 BLF578
Contextual Info: Experience high-performance analog NXP’s RF Manual makes design work much easier NXP’s RF Manual – one of the most important reference tools on the market for today’s RF designers – features our complete range of RF products, from low to high power.

817 CN

Contextual Info: DATA SHEET GaAs MES FET NE76118 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET DESCRIPTION N E76118 is a n-channel GaAs MES FET housed in MOLD package. PACKAGE DIMENSIONS in millimeters FEATURES • 2 . 1± 0.2 Low noise figure 1.25±0.1 NF = 0.8 dB TYP. at f = 2 GHz

UPC8236

Abstract: 2SC5508 NE3512S02 digital tv tuner hjfet NESG240033 SW SPDT NE5510279A antenna for microwave CATV materials ANTENNA parabolic
Contextual Info: RF AND MICROWAVE DEVICES SELECTION GUIDE − APPLICATION SYSTEM − April 2009 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .