M29F100B Search Results

555 NC timer

Contextual Info: M29F100BT M29F100BB 1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory • SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 45ns ■ PROGRAMMING TIME – 8µs per Byte/Word typical ■ 44 5 MEMORY BLOCKS

Contextual Info: M29F100T M29F100B SGS-THOMSON I I I I M J ì ILIì M W I I È Ì 1 Mb x8/x16, Block Erase SINGLE SUPPLY FLASH MEMORY PR ELIM IN A R Y DATA • 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS > FAST ACCESS TIME: 70ns > FAST PROGRAMMING TIME

Contextual Info: M29F100BT M29F100BB 1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory PRELIMINARY DATA • SINGLE 5V+10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 45ns ■ PROGRAMMING TIME - 8|is per Byte/Word typical ■ 5 MEMORY BLOCKS

M29F100T

Abstract: M29F100 M29F100B
Contextual Info: M29F100T M29F100B 1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory 5V ± 10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 70ns FAST PROGRAMMING TIME – 10µs by Byte / 16µs by Word typical PROGRAM/ERASE CONTROLLER (P/E.C.)

M29F100

Abstract: M29F100B M29F100BB M29F100BT M29F100T 14-Block
Contextual Info: M29F100T M29F100B 1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory NOT FOR NEW DESIGN M29F100T and M29F100B are replaced respectively by the M29F100BT and M29F100BB. 5V ± 10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 70ns

M29F100BB

Abstract: M29F100BT
Contextual Info: M29F100BT M29F100BB 1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory • SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 45ns ■ PROGRAMMING TIME – 8µs per Byte/Word typical ■ 44 5 MEMORY BLOCKS

Contextual Info: M29F100T M29F100B 1 Mbit 128Kb x 8 or 64Kb x 16, Block Erase Single Supply Flash Memory • 5V ± 10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACC ESS TIME: 70ns ■ FAST PROGRAMMING TIME - 10jas by Byte / 1 6|us by Word typical ■ PROGRAM/ERASE CONTROLLER (P/E.C.)

M29F100T

Abstract: M29F100 M29F100B
Contextual Info: M29F100T M29F100B 1 Mb x8/x16, Block Erase SINGLE SUPPLY FLASH MEMORY PRELIMINARY DATA 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 70ns FAST PROGRAMMING TIME – 10µs by Byte / 16µs by Word typical PROGRAM/ERASE CONTROLLER (P/E.C.)

M29F100

Abstract: M29F100B M29F100T 25A15
Contextual Info: M29F100T M29F100B 1 Mb x8/x16, Block Erase SINGLE SUPPLY FLASH MEMORY DATA BRIEFING 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 70ns FAST PROGRAMMING TIME – 10µs by Byte / 16µs by Word typical PROGRAM/ERASE CONTROLLER (P/E.C.)

nothing else matters

Abstract: AN1197 M29F100 M29F100B M29F100BB M29F100BT LANGUAGE CHIP 0x00aa C1197
Contextual Info: AN1197 APPLICATION NOTE Software Drivers for the M29F100B Flash Memory CONTENTS • INTRODUCTION ■ THE M29F100B PROGRAMMING MODEL ■ WRITING C CODE FOR THE M29F100B ■ C LIBRARY FUNCTIONS PROVIDED ■ PORTING THE DRIVERS TO THE TARGET SYSTEM ■ LIMITATIONS OF THE

Contextual Info: ^ # SGS-THOMSON [»«»[E O T ® *! M29F100T M29F100B nZJ 7 1 Mb x8/x16, Block Erasé SINGLE SUPPLY FLASH MEMORY DATA BRIEFING • 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 70ns ■ FAST PROGRAMMING TIME - 10^s by Byte / 1 6|iS by Word typical

M29F100BB

Abstract: M29F100BT
Contextual Info: M29F100BT M29F100BB 1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory PRELIMINARY DATA • SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 45ns ■ PROGRAMMING TIME – 8µs per Byte/Word typical ■

29F100B

Abstract: 29f100
Contextual Info: M29F100T M29F100B SGS-THOMSON 1 Mb x8/x16, Block Erase SINGLE SUPPLY FLASH MEMORY PR ELIM IN A R Y DATA 5V±10% SUPPLYVO LTAG Efor PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 70ns FAST PROGRAMMING TIME - 10p,s by Byte / 1 6p.s by Word typical PROGRAM/ERASE CONTROLLER (P/E.C.)

M29F100BB

Abstract: M29F100BT
Contextual Info: M29F100BT M29F100BB 1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory • SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 45ns ■ PROGRAMMING TIME – 8µs per Byte/Word typical ■ 44 5 MEMORY BLOCKS

flash memory

Contextual Info: GENERAL INDEX FLASH MEMORY, SINGLE VOLTAGE 5V M29F100T. M29F100B 1 Mb x8/x16, Block Erase SINGLE SUPPLY FLASH M EM O R Y . M29F200T, M29F200B 2 Mb (x8/x16. Block Erase) SINGLE SUPPLY FLASH M EM O R Y. M29F040 4 Mb (512K x 8, Block Erase) SINGLE SUPPLY FLASH M E M O R Y .

M29F100BB

Abstract: M29F100BT
Contextual Info: M29F100BT M29F100BB 1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory PRELIMINARY DATA • SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 45ns ■ PROGRAMMING TIME – 8µs per Byte/Word typical ■

AI01975

Contextual Info: M29F100T M29F100B SINGLE SUPPLY 1 Megabit x8/x16, Block Erase FLASH MEMORY DATA BRIEFING DUAL x8 and x16 ORGANISATION FAST ACCESS TIME: 70ns 5V±10% SUPPLY VOLTAGE for PROGRAM/ERASE and READ OPERATIONS TYPICAL PROGRAMMING TIME – 10µs by Byte / 16µs by Word

M29F100

Abstract: M29F100B M29F100T
Contextual Info: M29F100T M29F100B 1 Mbit 128Kb x 8 or 64Kb x 16, Block Erase Single Supply Flash Memory 5V ± 10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 70ns FAST PROGRAMMING TIME – 10µs by Byte / 16µs by Word typical PROGRAM/ERASE CONTROLLER (P/E.C.)

M29F100

Abstract: M29F100B M29F100BB M29F100BT M29F100T
Contextual Info: M29F100T M29F100B 1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory NOT FOR NEW DESIGN M29F100T and M29F100B are replaced respectively by the M29F100BT and M29F100BB. 5V ± 10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 70ns

M29F100

Abstract: M29F100B M29F100T
Contextual Info: M29F100T M29F100B 1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DATA BRIEFING 5V ± 10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 70ns FAST PROGRAMMING TIME – 10µs by Byte / 16µs by Word typical PROGRAM/ERASE CONTROLLER (P/E.C.)

quality control procedure st

Abstract: STMICROELECTRONICS MSL M29F100B M29F200B QRFL0011 5V Flash memory
Contextual Info: QRFL0011 QUALIFICATION REPORT M29F100B T6X-U35: 1 Mbit x8/x16 Single Supply Flash Memory INTRODUCTION The M29F100B is a 1 Mbit Single Supply (5V) Flash memory with Boot Block partitioning and organized as 128 KByte of 8 bits each or 64 KWord of 16 bits each. It can be programmed and erased in-system or

Contextual Info: M29F100T M29F100B SINGLE SUPPLY 1 Megabit x8/x16, Block Erase FLASH MEMORY TARGET SPECIFICATION DUAL x8 and x16 ORGANISATION FAST ACCESS TIME: 70ns 5V±10% SUPPLY VOLTAGE for PROGRAM/ERASE and READ OPERATIONS TYPICAL PROGRAMMING TIME – 10µs by Byte / 16µs by Word

STMICROELECTRONICS MSL

Abstract: M29F100B M29F200B QRFL0011 quality control procedure st CDIP-48 C-DIP-48 TSOP48 Package
Contextual Info: QRFL0011 QUALIFICATION REPORT M29F100B T6X-U35: 1 Mbit x8/x16 Single Supply Flash Memory INTRODUCTION The M29F100B is a 1 Mbit Single Supply (5V) Flash memory with Boot Block partitioning and organized as 128 KByte of 8 bits each or 64 KWord of 16 bits each. It can be programmed and erased in-system or

TSOP40 Flash

Abstract: m48z32y M27V512 FDIP24W M27128A M2716 M27256 M2732A M27512 M2764A
Contextual Info: MEMORY PRODUCTS SELECTOR GUIDE A C) NMOS UV EPROM, 5V Operation Size 16 Kb 32 Kb 64 Kb 128 Kb 256 Kb 512 Kb Ref M2716 M2732A M2764A M27128A M27256 M27512 Description 16 Kb x8), 350 - 450ns, NMOS 32 Kb (x8), 200 - 450ns, NMOS 64 Kb (x8), 180 - 450ns, NMOS