MARK HO SOT23 Search Results

transistor b722

Abstract: b863 tc 144e Transistor b861 B861 equivalent transistor TT 3034 A771 TRANSISTOR B861 transistor DTC103 transistor TT 3034
Contextual Info: DTA/DTB/DTC/DTD DIGITAL TRANSISTOR APPLICATION: • EQUIVALENT CIRCUITS: Inverter, Driver & Interface Circuits FEATURES; w w w . Datasheet. i n • Replaces up to three parts 1 transistor & 2 resis­ tors with one part • Available in a variety of surface mount or leaded

KTN2222AS

Abstract: KTN2222S KTN2222AS SOT-23
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTN2222S/AS EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : IcEx-10nA M ax. ; V ce-60V , V eb(off)-3V. • Low Saturation Voltage : VcE(sat)=0.3V(Max.) ; Ic=150mA, lB=15mA.

BT816

Abstract: TA114E a768 transistor b722 B861 B718 equivalent transistor TT 3034 C785 transistor b714 transistor B728
Contextual Info: DIGITAL TRANSISTOR APPLICATION: • EQUIVALENT CIRCUITS: Inverter, Driver & Interface Circuits FEATURES: •o OUT I N o -MA/V • Replaces up to three parts 1 transistor & 2 resis­ tors with one part • Available in a variety of surface mount or leaded

ZUA SOT23

Abstract: KN4400S KN4401S Marking m.1 sot 23 zua
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KN4400S/4401S EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURE • Complementary to KN4402S/4403S. DIM A B C D E G H J MAXIMUM RATINGS Ta=25°C SYMBOL RATING UNIT Collector-Base Voltage

kl 00

Abstract: BC859 BC859A BC859B BC860 BC860A BC860B
Contextual Info: KEC SEMICONDUCTOR BC859/860 TECHNICAL DATA KOREA ELECTRONICS CO.,LTD. EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. • For Complementary with NPN Type BC849/850 DIM A B C D E G H J K L M MAXIMUM RATINGS Ta=25°C CHARACTERISTIC

KRA107S

Abstract: KRA108S KRA109S
Contextual Info: KRA107SSEMICONDUCTOR KRA109S EPITAXIAL PLANAR PNP TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES • With Built-in Bias Resistors • Simplify Circuit Design • Reduce a Quantity of Parts and Manufacturing Process

B861 transistor

Abstract: equivalent transistor TT 3034 transistor b722 b863 PK2222A a774 transistor TT 3034 tc 144e TRANSISTOR 124E A771 TRANSISTOR
Contextual Info: R OJ N m DTA/DTB/DTC/DTD I DIGITAL TRANSISTOR APPLICATION: • j EQUIVALENT CIRCUITS: Inverter, D river & Interface Circuits FEA T U R ES; • R ep laces up to three parts 1 transistor & 2 resis­ tors with one part • Available in a variety of surface mount or leaded

Contextual Info: Discrete POW ER & Signal Technologies * Æ^Æ National Semiconductor" Surface Mount Transistors ^ PNP Medium Power V Device No. SOT-23 Mark Case Style v V EBO ’cBO (V) (V) (V) Min Min Min (n A )@ Max CBO CEO V CE<SAT) V “ h FE Min @ Max 'C & V“ (V )

1D SOT 23-6

Abstract: MMBTA06 MMBTA42 MMBTA43 NZT6714 NZT6715 NZT6717 PZTA06 PZTA42
Contextual Info: This Surface Mount Transistors Material tr Copyrighted □ □ Ln a t-* t-1 Ui Discrete POWER & Signal Technologies Na t i o n a I f i Semiconductor" Surface Mount Transistors a NPN Medium Power JC a JC -0 _D By ai a -i Device No. SOT-23 Mark Case Style

MMBT2222A

Contextual Info: This I tr Material In □ . m tr1 Discrete POW ER & Signal Technologies LM National Semiconductor” Surface Mount Transistors LU Copyrighted a a xa -C J3 tr By Ln —3 a NPN General Purpose Amplifiers and Switches V D evice No. SOT-23 Mark M M BT100 (N1)

MMBFJ202

Abstract: MMBF4119 MMBFJ201 MMBF4117 MMBF4118 MMBF5103 MMBF5457 MMBF5458 MMBF5459 MMBFJ210
Contextual Info: ^ iii^ g-q. TT5DH0 0 DE TT GkSS^w^R; Surface Mount Transistors D iscrete POWER & S ignal Technologies Na t ion a I Semi cond Surface Mount JFETs N-Channel General Purpose Amplifiers Device No. SOT-23 Mark Case Style BV gss (V)@ iG Min (|iA) ’ass <"A)@v dg

lm 338 zener

Abstract: Semitron Industries lm 704 zener DO-41 ZSK36 semitron surge
Contextual Info: SEMITRON INDUSTRIES LTD M3E D • fll37flûR GOOOlMb 7 B S L C B ZSK36/704-15K36 S E R I E S T W - 'u y SURGEPAK Glass Passivated Junction Transient ■Voltage Suppressor 28 Volt Power Supply Protection ■15000 Watt Peak Power 10 Watt Steady State APPLICATIONS

Contextual Info: S E M IC O N D U C T O R NC7SZ08 TinyLogic™ UHS 2-Input AND Gate General Description Features The NC7SZ08 is a single 2-Input AND Gate from Fairchild’s Ultra High Speed Series of TinyLogic™ in the space saving SOT23 package. The device is fabricated with advanced

2sc2240 equivalent

Abstract: 2sc1815 equivalent 2sc3112 equivalent 2sa1015 equivalent 2sc2120 equivalent 2sc2458 equivalent 2Sc1959 equivalent 2SC1627 equivalent 2sc2878 equivalent 2SA1091 equivalent
Contextual Info: Surface Mount Devices 1 Super-Mini Transistors (SOT-23MOD.) Electrical Characteristics (Ta=25’ C) Application Type No. le (mA) PC (mW) TJ rc ) Mark Complementary Remarks (TO-92 Mini-transistor) Equivalent TO-92 Type No. 2SA1162 Low-frequency oompllflcation

pn2222n

Abstract: CBVK741B019 F63TNR MMBT3702 MPS3702 PN2907A transistor mark code t1 Fairchild taping TO-92
Contextual Info: MPS3702 MMBT3702 C E C TO-92 BE B SOT-23 Mark: 137 PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500mA. Sourced from Process 63. See PN2907A for characteristics. Absolute Maximum Ratings*

MMBT2484

Abstract: PN2484 2N5088 CBVK741B019 F63TNR PN2222N
Contextual Info: PN2484 / MMBT2484 PN2484 MMBT2484 C E C B TO-92 SOT-23 E B Mark: 1U NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µ to 50 mA. Sourced from Process 07. See 2N5088 for characteristics.

2N5088

Abstract: CBVK741B019 F63TNR MMBT2484 PN2222N PN2484
Contextual Info: PN2484 / MMBT2484 PN2484 MMBT2484 C E C B TO-92 SOT-23 E B Mark: 1U NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µ to 50 mA. Sourced from Process 07. See 2N5088 for characteristics.

MARKING W3 SOT23 TRANSISTOR

Abstract: rf transistor mark code H1 transistor marking code ne SOT-23 marking code w2 sot23 pnp rf transistor sot23 Transistor marking p2 sot-23 Marking 3D marking 3d sot-23 Marking code mps
Contextual Info: MPSH81 / MMBTH81 MPSH81 MMBTH81 C E C E TO-92 B SOT-23 B Mark: 3D PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 75. Absolute Maximum Ratings*

2N5401 fairchild

Contextual Info: 2N5401 / MMBT5401 2N5401 MMBT5401 C E C B TO-92 SOT-23 E B Mark: 2L PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Sourced from Process 74. Absolute Maximum Ratings*

Contextual Info: » Discrete POWER & Sig n a l Technologies National S e m i c o n d u c t o r " ' _ V Device No. SOT-23 Mark C ase Style CES V * v v CEO CBO (V) M in „ _ _ _ , Pro E lectro n S u rfa c e M o u n t B ip o la r D ev ic es 1 / 1 CES v y ebo * 1 CBO (V) Min

PN5179

Abstract: CBVK741B019 F63TNR MMBT5179 MPS5179 PN2222N TRANSISTOR C 3223 MJC2
Contextual Info: PN5179 MMBT5179 C E C B TO-92 SOT-23 E C B E Mark: 3C TO-92 B NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers with collector currents in the 100 µA to 30 mA range in common emitter or common base mode of operation, and in low frequency

transistor 2N5461

Contextual Info: MMBF5460 MMBF5461 2N5460 2N5461 2N5462 G D G S TO-92 SOT-23 S Mark: 6E / 61U D P-Channel General Purpose Amplifier This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. Sourced from Process 89.

rf transistor mark code H1

Abstract: CBVK741B019 F63TNR MMBTH24 MPSH11 MPSH24 PN2222N
Contextual Info: MPSH24 / MMBTH24 MPSH24 MMBTH24 C E C B TO-92 B SOT-23 E Mark: 3A NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 µA to 20 mA range to 300 MHz, and low frequency drift commonbase VHF oscillator applications with high output levels for

Contextual Info: PN4355 MMBT4355 C E C BE TO-92 B SOT-23 Mark: 81 PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from Process 67. See TN4033A for characteristics. Absolute Maximum Ratings*