MB832 Search Results

mb832000

Contextual Info: UJITSU M I CROE LE CT RO NI CS FU JITSU 23E D • 374=57^2 000^076 T ■ C M O S ^ M -B IT # § t^ S I& MASK-PROGRAMMABLE' READONLY, M E M O R Y MB832000 April 1968 Edition 1.0 -T-MU-15- 1S 2M-BIT 262,144 x 8 CMOS READ ONLY MEMORY The Fujitsu MB832000 Is a CMOS Sl-gate m ask-programmable static read

MB83256

Abstract: mb83
Contextual Info: F U J IT S U M OS M em ories MB83256-25 ‘ CMOS 262,144-Bit Mask-Programmable Read Only Memory Description T he Fujitsu M B83256 is a CM OS Si-gate m ask-program m able static read only m em ory organized as 32,768 w ords by 8-bits. T he M B83256 has TTL-com patibie I/O and TR I-state output level

mb832000

Abstract: fujitsu 1988
Contextual Info: FUJITSU CMOS 2M-BIT MASK-PROGRAMMABLE READ ONLY MEMORY MB832000 April 1988 Edition 1.0 2M-BIT 262,144 x 8 CMOS READ ONLY MEMORY The Fujitsu MB8320Q0 is a CMOS Si-gate mask-programmable static read only memory organized as 262,144 words by 8 bits. The MB832000 has TTL-com patlble I/O and 3-sta te output level -with

MB83256

Abstract: mb83
Contextual Info: FU JITSU MOS Memories • MB83256-25 ‘ CMOS 262,144-Bit Mask-Programmable Read Only Memory Description The Fujitsu MB83256 is a CMOS Si-gate mask-programmable static read only memory organized as 32,768 words by 8-bits. The MB83256 has TTL-compatible I/O and TRI-state output level

GI9332

Abstract: mb831000 MB834000 23C2001 23C1001 23c1000 UPD23C1001 23c4001 HN62304 mb832000
Contextual Info: PROM/ROM index and cross reference 1.9 Jan 16, 2000 -Fujitsu 256K 32k x 8 MB83256 28 pin 512k 64k x 8 MB83512 (28 pin) 1M 128k x 8 MB831000 (32 pin) 2M 256k x 8 MB832000 (32 pin) 4M 256k x 16 / 512k x 8

eprom rom 512k x 16 bits

Contextual Info: Section 1 >8-Pin Memory Cards — At a Glance P a g * Technology 1-3 1-17 1-19 Mask ROM Mask ROM EPROM 1-39 OTPROM 1-57 SRAM D«vlc« Ace«*a Tim« Emb«dd*d 1C* MB98A5090 250 ns MB834200A x 1 pc 96A5100 250 ns MB834200A x 2 pcs 98A5110 250 ns MB832000 x 8 pcs

MB832000A

Abstract: MB832000 A831D MBM27C2001
Contextual Info: September 1992 Edition 1.0 FUJITSU DATA SHEET MB832000A CMOS 2M-BIT MASK READ ONLY MEMORY 256K x 8 CMOS MASK READ ONLY MEMORY The Fujitsu MB832000A is a CMOS Si-gate mask-programmable static read only memory organized as 262,144 words by 8 bits. The MB832000A has TTL-compatible I/O and 3-state output level with fully-static

A5090

Abstract: A5090-25 A509-0 MB832
Contextual Info: February 1990 E d it,o n 2 - ° DATA SHEET = cP T^ ¥ ï ï ï ' T ' f ' ï f _ r Ulli bu MB 98A 5090-25y 5100-25, 5110-25 MASK ROM MEMORY CARD MASK PROGRAMMABLE READ ONLY MEMORY CARD 512K/1M/2M-BYTE DESCRIPTION The Fujitsu MB9BA5090/500/5110 are Mask Programmable Read Only Memory

Contextual Info: FUJITSU MICROELECTRONICS 7Û 3749762 FUJITSU MICROELECTRONICS D e | 374c17t,a 0003Gb3 □ |' 78C 03063 FUJITSU M OS M em ories • MB85204-10, MB85204-12, MB85204-15 262,144 x 4-Bit Dynamic Random Access Memory SIP Module Description The Fujitsu MB85204 is a fully decoded, 262,144 word X 4-bit

Contextual Info: FU JITSU MOS M em ories • M B 8 5 2 0 3 -10,M B 8 5 2 0 3 -12 ,M B 8 5 2 0 3 *15 MOS 262,144 x 4-Bit Dynamic RAM Module Description The Fujitsu MB85203 is a fully decoded, 262,144 words x 4-bit NMOS dynamic random access memory module consisting of four

toshiba 32k*8 sram

Abstract: M5M23C100 M5M5265 seeq DQ2816A M5M23C400 MB832001 HITACHI 64k DRAM TC511000 KM41C464 TC51464
Contextual Info: FUNCTION GUIDE MEMORY ICs 3. CROSS REFERENCE GUIDE 3.1 DRAM Density 64 K X 1 256K X 1 X4 1M X X 4M X X 3.2 Mode Org. 1 4 1 4 Samsung Toshiba Hitachi Fujitsu NEC MSM3764 KM4164 Page Okl F. Page KM41C256 TC51256 Nibble KM41C257 TC51257 HM51256 S. Column KM41C258

uPD23C4000

Abstract: 93c46 atmel sony Cross Reference atmel 93c66 HN62404P 93C46L rom at29c010 Hitachi SRAM cross reference x2864a UPD23C2000
Contextual Info: MEMORY ICs CROSS REFERENCE GUIDE 3. C R O S S REFEREN CE GUIDE 3.1 Video RAM Density 256K 512K Feature Minimum Organization 64Kx4 Samsung KM424C64 Minimum 64Kx8 KM428C64 Minimum 256KX4 KM424C256 Micron Hitachi Ti HM53461 2 TMS4461 HM534251 TM S44C250 TC524256A

MB834000

Abstract: M5M23160 MB834100 MB838000 MB832000 SGS M27C256 I27C256 KM23C1010 M27C256 M27C256 intel
Contextual Info: CROSS-REFERENCE GUIDE 1. EPROM CAPACITY CONFIGRUATION MACRONIX INTEL AMD N.S. S.G.S. 256K 32K x 8 MX27C256 i27C256 Am27C256 NM27C256 M27C256 512K 64K x 8 MX27C512 i27C512 Am27C512 NM27C512 M27C512 32K x 16 MX27C516 128K x 8 MX27C1000 i27C010 Am27C010 NM27C010

41C1000

Abstract: fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b 41c464 hn62324 M7202A
Contextual Info: MEM ORY ICs FUNCTION GUIDE 3. C R O S S REFERENCE GUIDE 3.1 DRAM Density Org. Samsung Mode Toshiba Hitachi Fujitsu H M 51 256 M B 81256 NEC Oki 64K X 1 Page K M 416 4 25 6 K X 1 F. Page KM 41C256 TC 51256 Nibble KM 41C257 TC51257 S. C olu m n KM 41C258 TC 51258

Contextual Info: Pjjijip^enijconductor^^^ • bbS3T31 0031233 T1S ■ APX^ProductspecificatiOT NPN 6 GHz wideband transistor ^ BFG91A N AHER PHILIPS/DISCRETE DESCRIPTION b*lE D PINNING NPN transistor in a 4-lead dual-emitter plastic SOT 103 envelope. PIN It is designed for application in

41C464

Abstract: 41C1000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100
Contextual Info: MEM ORY ICs CRO SS REFERENCE GUIDE 3. C R O SS REFERENCE GUIDE 3.1 DRAM Density 25 6 K Org. X 1 X 4 1M X 1 X 4 4M X 1 X 4 x8 16M M ode Sa m su n g F. Page KM 41C256 TC 51256 N ibble KM 41C257 TC 51257 S. C o lu m n KM 41C258 TC 51258 H M 51 258 MB81258 F. Page

K93C46

Abstract: 93cs46n MB832001 hn62308 41C1000 93C46LN 41464 hn623257 HM63832 DT71256
Contextual Info: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 256K X 1 F. P a g e KM 41C 256 TC 51256 X 1 X 4 4M X 1 X 4 , 1 6M To sh iba M od e X 4 1M Sam su ng Org. H ita ch i Fu jitsu HM 51256 M B81256 NEC /iP D 4 1 2 5 6 N ib b le KM 41C 257

TC55B8128

Abstract: KM23C4000AG TC534000AF HN62308BP TC551632 hitachi cross mb83 68512U HITACHI 64k DRAM TC55B4256
Contextual Info: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 2 56 K 1M Org. x1 Toshiba F Page T C 51256 N ib b le K M 4 1C 2 5 7 T C 51257 H ita ch i H M 51 2 5 6 — F u jitsu M B 8 12 5 6 M B 8 12 5 7 NEC /P D 41256 — Oki M S M 5 1C 2 5 6

TC55B4257

Abstract: 93C46L UPD23C4000 atmel 93c66 KM628512 Hitachi SRAM cross reference atmel 93c57 TC55B465 upd23c8000 93c56v
Contextual Info: CROSS REFERENCE GUIDE MEMORY ICs 3.1 Video RAM Density 256K Feature Minimum Organization 64K x4 Samsung KM424C64 Micron Toshiba NEC Hitachi Ti HM53461 2 TMS4461 HM534251 TMS44C250 TC524256A HM534251A SMJ44C250 TC524256B HM534252 MT42C4064 /a PD41264 /<PD42264

SND 640 ASR

Abstract: HS53 MB81257 MB85208-12 MB85208-15
Contextual Info: F U J IT S U M O S M e m o rie s MB85208-12, MB85208-15 1,048,576 x 1-Bit Dynamic Random Access Memory SIP Module Description T he Fujitsu M B85208 is a fully decoded, 1,048,576 w ord x 1-bit NM O S dynam ic random access m em ory m odule consisting of four

MB98A5100-25

Abstract: mb832000 A0-A21
Contextual Info: February 1990 Edition 2 .0 FUJITSU DATA S H E E T MB98A5090-25/5100-25/5110-25 MASK ROM MEMORY CARD MASK PROGRAMMABLE READ ONLY MEMORY CARD 512K/1M/2M-BYTE The Fujitsu MB98A5090/5100/5110 are Mask Programmable Read Only Memory Mask ROM cards capable of storing and retrieving large amounts of data Each Mask ROM card

Contextual Info: _ FUJITSU MICROELECTRONICS 7Û V U - / 3 r/S' D Ë J 3 7 4 c!7h2 0 0 0 3 S Ô 3 4 J“ FU JITSU MOS Memories B M383256-25 CMOS 262,144-Bit Mask-Programmable Read Only Memory Description T he Fujitsu M B83256 is a CM O S Sl-gate m ask-program m able

Contextual Info: Preliminary FU JITSU MOS Memories • M B 8 5 2 1 1 -1 2 , M B 8 5 2 1 1 -1 5 524,288 X 4-Bit Dynamic Random Access Memory SIP Module The Fujitsu MB85211 is a fully decoded, 524,288 word x 4-bit NMOS dynamic random access memory module consisting of eight

al 232 nec

Abstract: TC55B4257 MB832001 NM9306 eeprom Cross Reference D41264 TC5116100 HN28C256 NM9307 oki cross reference
Contextual Info: CROSS REFERENCE GUIDE MEMORY ICs CROSS REFERENCE GUIDE 1 .DRAM Density 256K Org. X1 x4 1M x1 X4 4M X1 x4 Mode Toshiba Hitachi Fujitsu NEC Oki MSM51C256 F.Page KM41C256 TC51256 HM51256 MB81256 Nibble KM41C257 TC51257 — MB81257 — S. Column KM41C258 TC51258