MEMORY IC Search Results

Contextual Info: Memory IC 16kbit serial ferroelectric memory BR24CF16F The BR24CF16F is a non-volatile ferroelectric memory developed for use in ROHM's non-volatile memory technolo­ gy and ferroelectric technology. Using a ferroelectric memory enables faster writing speeds than EEPROM and flash

Flash Memory

Abstract: sram 128m 1m x 16 memory module mask rom SRAM
Contextual Info: IC Memory CD-ROM X13769XJ2V0CD00 DRAM Flash memory DRAM Module MCP Flash memory + SRAM SRAM COMBO Memory Mask ROM Line Buffer Product name Application Road map Product category Main menu IC Memory Direct RambusTM DRAM Synchronous DRAM (Single Data Rate)

Contextual Info: Memory IC 16kbit serial ferroelectric memory BR24CF16F The BR24CF16F is a non-volatile ferroelectric memory developed for use in ROHM’s non-volatile memory technolo­ gy and ferroelectric technology. Using a ferroelectric memory enables faster writing speeds than EEPROM and flash

KM68512

Abstract: 12BKX8 km6865b
Contextual Info: MEMORY ICs FUNCTION GUIDE 1. INTRODUCTION 1.1 Dynamic RAM CMOS n— — 256K bit 1M bit 105 ELECTRONICS MEMORY ICs — FUNCTION GUIDE 4M bit 106 ELECTRONICS MEMORY ICs FUNCTION GUIDE 107 ELECTRONICS MEMORY ICs FUNCTION GUIDE CM O S 108 ELECTRONICS MEMORY ICs

BR24CF16F

Abstract: sis00
Contextual Info: Memory IC 16kbit serial ferroelectric memory BR24 CF 16 F The BR24CF16F is a non-volatile ferroelectric memory developed for use in ROHM’s non-volatile memory technolo­ gy and ferroelectric technology. Using a ferroelectric memory enables faster writing speeds than EEPROM and flash

SLE 4403

Abstract: 4406S afnor SLE 4463 M2.2 SLE 77 4418 66 4402 sle 4463 sms ic MEMORY MODULES
Contextual Info: Security Packaging Center Content Contact based Modules Memory Modules SMS SEC PC M Rev. 5.0/2003 Page 1/7 Memory Modules Security Packaging Center Information about our Memory Modules Memory Modules Our modules for memory ICs With over 1.5 billion modules produced the M2.2 & M3.2 are two of the most

java card

Abstract: ISO-7816-3 crc CRC16 EMTCG128-3G FIPS140-2 ISO3309 ISO-3309
Contextual Info: EM MICROELECTRONIC - MARIN SA Theseus TM Cipher Gold 128-3G EMTCG128-3G 128KB Flash Smart Card IC + Cryptography Engine Memory Control ‰ Memory Management Unit MMU ‰ Code / Data flexible memory partitioning thanks to GPNVM512 General Purpose NV Memory

CRC16

Abstract: EMTCG176-3G FIPS140-2 ISO3309 ISO-7816-3 crc
Contextual Info: EM MICROELECTRONIC - MARIN SA Theseus TM Cipher Gold 176-3G EMTCG176-3G 176KB Flash Smart Card IC + Cryptography Engine Memory Control ‰ Memory Management Unit MMU ‰ Code / Data flexible memory partitioning thanks to GPNVM512 General Purpose NV Memory

BR93CS46F

Contextual Info: Monolithic ICs / -\ IC Memory • Memory IC s .8 ■ ICs for OA A pplications. 17 • Memory 1C L in e u p .8

8U406

Abstract: T0252 ba05sfp BA05FP BU2879 32segx4com ba1032 BU9716AK bu9716 BA312
Contextual Info: Memory/Standard tCs Table of Memory/Standard ICs Table of Memory / Standard ICs Ferroelectric memory Operating voltage range Capacity oils 16k Bit configurato Power supply Product No. (word X bit} BR24CF16F voltage (V) 2,048 X 8 5 Read (V) Write (V) 4.5 -5 .5

CO2V

Contextual Info: MEMORY !Cs FLASH MEMORY A list of Errata for 1996 Flash Memory Databook February 1996 SAMSF002 * co > 2 V NVM Product Planning Team M emory Business Sam sung Electronics Co. 82-2-760-6067 ELfCTRONICS FLASH MEMORY MEMORY ICs T he fo llow ing tables replaced co rre sp o n ding ones In the 1996 Flash M em ory D atabook

rfid reader 915MHZ

Abstract: RFID specifications
Contextual Info: WM72016-6 16Kbit Secure F-RAM Memory with Gen-2 RFID Access & Serial Port Direct Memory Access DESCRIPTION FEATURES The WM72016-6 is a RFID transponder IC with nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory, or F-RAM, is nonvolatile and performs

KM6264BL-10

Abstract: samsung CMOS SRAM KMM591000 KM75C01 KM75C01AP80 KM75C03AJ-50 KM6264BL7 KM75C01AP-20 KM75C01AP-25 KM75C01AP-80
Contextual Info: MEMORY ICs FUNCTION GUIDE 1. INTRODUCTION 1.1 Dynamic RAIM »¡SAMSUNG Electronics 11 MEMORY ICs »SElectronics SAMSUNG FUNCTION GUIDE MEMORY ICS sgSAMSUNG Electronics FUNCTION GUIDE 13 MEMORY ICs FUNCTION GUIDE *: N ew Product f: P relim inary P roduct f t : U nder D evelopm ent

WM720166

Abstract: rfid reader 915MHZ
Contextual Info: WM72016-6 16Kbit Secure F-RAM Memory with Gen-2 RFID Access & Serial Port Direct Memory Access DESCRIPTION FEATURES The WM72016-6 is a RFID transponder IC with nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory, or F-RAM, is nonvolatile and performs

hitachi eprom

Abstract: hitachi ic
Contextual Info: Contents Refer to Hitachi IC Memory Data Book No. 1 regarding SRAM, PSRAM and Hitachi IC Memory Data Book No. 3 regarding Flash Memory, Flash Card, EEPROM, EPROM, OTPROM and Mask ROM and Hitachi IC Memory Data Book No. 4 regarding DRAM Module and Synchronous DRAM Module.

WM720166

Abstract: rfid reader 915MHZ
Contextual Info: WM72016-6 16Kbit Secure F-RAM Memory with Gen-2 RFID Access & Serial Port Direct Memory Access DESCRIPTION FEATURES The WM72016-6 is a RFID transponder IC with nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory, or F-RAM, is nonvolatile and performs

intel nand flash

Abstract: intel nand slc Nand intel NAND Qualification Reliability NAND read disturb laptop HARD DISK CIRCUIT diagram laptop battery mtbf "NAND Flash" intel NAND Flash Memory NAND Flash Qualification Reliability
Contextual Info: White Paper Intel Flash Memory Intel® NAND Flash Memory for Intel® Turbo Memory Intel® NAND Flash Memory for Intel® Turbo Memory White Paper Introduction Overview Intel has introduced a new non-volatile memory NVM layer into the memory hierarchy in the mobile computing platform. This new NVM

Contextual Info: Switching, Attenuation and Conferencing Family ICs Product Overview Type Short Title Function Page PEB 2045 MTSC Memory Time Switch CMOS 147 PEB 2046 MTSS Memory Time Switch Small 150 PEB 2047 MTSL Memory Time Switch Large 151 PEB 2047-16 MTSL-16 Memory Time Switch Large H-16 MHz

hitachi ic

Abstract: hitachi eprom
Contextual Info: Contents Refer to Hitachi IC Memory D ata Book No. 2 regarding DRAM, Synchronous DRAM, SGRAM, Frame and VRAM and Hitachi IC Memory Data Book No. 3 regarding Flash Memory, Flash Card, EEPROM, EPROM, OTPROM and M ask ROM and Hitachi IC Memory Data Book No. 4 regarding DRAM Module

LRS1821

Abstract: 128M-BIT LRS1830 sharp LRS1360 IC-E102 128-MBIT
Contextual Info: NEW PRODUCT INFORMATION LRS1830 128-Mbit Flash Memory+128-Mbit Flash Memory+32-Mbit RAM Combination Memory Under development < Outline > LRS1830, consisting of a 128-Mbit flash memory, a 128-Mbit flash memory, and a 32-Mbit RAM, is a composite memory chip that is

ddr5

Abstract: DSP56301
Contextual Info: 3 3.1 MEMORY MAPS INTRODUCTION The memory space of the DSP56301 is partitioned into program memory space P , X data memory space and Y data memory space. The program memory space (P) includes internal PRAM, internal Instruction Cache (that behaves as a PRAM when the cache is

ddr3 ram

Abstract: DDR4 motorola memory
Contextual Info: Chapter 3 Memory Maps The memory space of the DSP56301 is partitioned into program memory space P , X data memory space and Y data memory space. The P memory space includes internal PRAM, an internal Instruction Cache that behaves as a PRAM when the cache is disabled, a boot

AN-1149

Abstract: AN1149 APP1149 MAX1637 MAX4130
Contextual Info: Maxim > App Notes > POWER-SUPPLY CIRCUITS Keywords: DDR Memory-Termination Supply Jul 17, 2002 APPLICATION NOTE 1149 DDR Memory-Termination Supply The high-speed memory of workstations and servers contains double data rate DDR synchronous DRAMs (SDRAMs). These memory ICs operate with supply voltages of 2.5V or 1.8V, and require a reference voltage

Contextual Info: AVED MEMORY PRODUCTS Where Quality & Memory Merge AVEF29F016U16SJ08-XX 16MB FLASH SIMM, based on AMD Am29F016D Uniform Sector Flash Memory DESCRIPTION PIN CONFIGURATIONS AVED Memory Products AVEF29F016U16SJ08-XX is a 5.0V flash memory SIMM, composed of eight CMOS