MGFC38V Search Results

Mitsubishi

Abstract: MGFC38V6472
Contextual Info: MITSUBISHI ELECTRIC MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC38V6472 6.4 ~ 7.2GHz BAND 6W INTERNALLY MATCHED GaAs FET MITSUBISHI ELECTRIC

s18a

Abstract: MGFC38V5867 675g
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC38V5867 5.8~6.75GHz BAND 6W INTERNALLY MATCHED GaAs FET D E S C R IP TIO N The MGFC38V5867 device is an internally impedance-matched GaAs power FET especially designed for use in 5.8 ~ 6.75GHz band amplifiers. The hermetically sealed metal-ceramic package

MGFC38V5867

Contextual Info: June/2004 June/2004 MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC38V5867 5.8 ~ 6.75GHz BAND 6W INTERNALLY MATCHED GaAs FET MITSUBISHI ELECTRIC June/2004

Contextual Info: < C band internally matched power GaAs FET > MGFC38V5964 5.9 – 6.4 GHz BAND / 6W DESCRIPTION OUTLINE DRAWING The MGFC38V5964 is an internally impedance-matched GaAs power FET especially designed for use in 5.9 – 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic

Contextual Info: < C band internally matched power GaAs FET > MGFC38V6472 6.4 – 7.2 GHz BAND / 6W DESCRIPTION OUTLINE DRAWING The MGFC38V6472 is an internally impedance-matched GaAs power FET especially designed for use in 6.4 – 7.2 GHz band amplifiers. The hermetically sealed metal-ceramic

MGFC38V3642

Abstract: MGFC38V
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC38V3642 PBEUN"nARY 3.6~4.2GHz BAND 6W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F C 3 8 V 3 6 4 2 is an internally im pedance-m atched GaAs power FET especially designed fo r use in 3 .6 — 4 .2 GHz band amplifiers. The herm etically sealed metal-ceramic

mgfc30

Abstract: MGFC39V5964A
Contextual Info: C BAND INTERNALLY MATCHED GaAs FET M GFCxxVxxxxx Series Typical Characteristics Type Freq. GHz PldB (dBm) GIp mi MGFC36V3742 3 .7 -4 .2 IMG FC36V3742A M GFC36V4460 MGFC36V4460A MGFC38VS258 MGFC36V6964 M G FC36V6964A MGFC36V6471 3 .7 -4 .2 ii 4 .4 -5 .0 10

Contextual Info: < C band internally matched power GaAs FET > MGFC38V5867 5.8 – 6.75 GHz BAND / 6W DESCRIPTION OUTLINE DRAWING The MGFC38V5867 is an internally impedance-matched GaAs power FET especially designed for use in 5.8 – 6.75 GHz band amplifiers. The hermetically sealed metal-ceramic

mitsubishi

Abstract: MGFC38V MGFC38V5964
Contextual Info: MITSUBISHI ELECTRIC MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC38V5964 5.9 ~ 6.4GHz BAND 6W INTERNALLY MATCHED GaAs FET MITSUBISHI ELECTRIC

Contextual Info: < C band internally matched power GaAs FET > MGFC38V5867 5.8 – 6.75 GHz BAND / 6W DESCRIPTION OUTLINE DRAWING The MGFC38V5867 is an internally impedance-matched GaAs power FET especially designed for use in 5.8 – 6.75 GHz band amplifiers. The hermetically sealed metal-ceramic

Contextual Info: b 2 4 clû 2 cî 0 0 1 7 ^ 0 MITSUBISHI SEMICONDUCTOR <GaAs FET> 477 MGFC38V3642 ool 8 • >h,s . . . limi« » 3 .6 ~ 4 .2 G H z BAND 6W INTERNALLY MATCHED GaAs FET DESCRIPTION Th e M G F C 3 8 V 3 6 4 2 is an internally im p edance-m atched G aA s power F E T especially designed for use in 3 . 6 —4 .2

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC38V6472 6 .4 —7.2G Hz BAND 6W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F C 3 8 V 6 4 7 2 is an in te rna lly im p e d a n ce -m a tch e d GaAs power FET especially designed fo r use in 6 .4 - 7 . 2 GHz band am plifiers. The herm etically sealed m etal-ceramic

pj 59

Abstract: MGFC38V5964
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC38V5964 5 .9 — 6 .4 G H z BAN D 6 W IN TE R N A L L Y M A TC H E D GaAs F E T DESCRIPTION The M G F C 3 8 V 5 9 6 4 is an in te rna lly im p e d a n ce -m a tch e d GaAs power FET especially designed fo r use in 5 . 9 — 6 .4

Contextual Info: < C band internally matched power GaAs FET > MGFC38V5964 5.9 – 6.4 GHz BAND / 6W DESCRIPTION OUTLINE DRAWING The MGFC38V5964 is an internally impedance-matched GaAs power FET especially designed for use in 5.9 – 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic

MGF2430A

Abstract: MGF4714AP MGF4914D MGF4919 MGF1402B MGF2430 MGF1923 7.1 power amplifier circuit diagram block diagram of power factor meter mgf2445
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> APPLICATION NOTE RECOMMENDED LINE-UP FOR LOW NOISE DEVICES APPLICATION NOTE 1. Recommended Line-Up 1.1 Line-up for 12G Hz Band Converter W G - M IC CO NVERTER RF AM P 1ST STAGE M IX E R 2N D S T A G E IF A M P 3R D S T A G E

C42V5964

Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
Contextual Info: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION

MGF4919G

Abstract: MGF4919 mgf1903b MGF0907B 14512H mgf4316g MGFC45V2527 MGF1923 MGFC38V3642 MGF0904A
Contextual Info: lid GaAs FETs •GaAs FET SERIES FOR MICROWAVE-BAND LOW-NOISE AMPLIFIERS <Ta = 25-c> PT If f -6 mA ¡¡m i 100 360 < (GHe) ' (mA) f t 3 10 NFmin max (dB) Qs min (dB! 11 4 1.4 4 1.0 12 2.0 i I MGF1302 Vf l P -6 -6 -6 80 240 3 10 MGF1323 -6 -6 80 240 3 10

7785A

Abstract: FC36V
Contextual Info: S/C BAND INTERNALLY MATCHED GaAs FET MGFSxxVxxxx MGFCxxVxxxxx Series T y p ic a l C ha ra cte ris tics -Kreq. Type M Q F S 4 4 V 2 5 2 7 * M G F S 45V 2527 «+ M G FC36V 3742A * * M GFC36V52S8 M G FC36V59M A* * M G FC 36V 6472A * * M G FC 36V 7177A * M G FC36V 7785A * *

3642G

Contextual Info: •GaAs FET SERIES FOR MICROWAVE-BAND MEDIUM AND HIGH POWER AMPLIFIERS CONTINUED , \Ta =25 C ) , Max. ratings Bias conditions frequancy Type No. HIGH F R E Q J E N C ' DEVICES vs r M GFC44V4450* « MGFC36V5258 MGFC39V5258 & MGFC40V5258 X. MGFC42V5258 MGFC36V5964A m