MMBT5551LT1 Search Results

MMBT5551LT1 Datasheets (8)

Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
MMBT5551LT1	Avic Electronics	SOT-23 Plastic-Encapsulate Transistors	Original	PDF	29.81KB	1
MMBT5551LT1	Leshan Radio Company	High Voltage Transistors(NPN Silicon)	Original	PDF	163.2KB	4
MMBT5551LT1	Motorola	Silicon NPN Transistor	Original	PDF	203.52KB	6
MMBT5551LT1	On Semiconductor	Small Signal High Voltage Transistor-NPN; Package: SOT-23 (TO-236) 3 LEAD; No of Pins: 3; Container: Tape and Reel; Qty per Container: 3000	Original	PDF	155.8KB	5
MMBT5551LT1	On Semiconductor	Small Signal NPN	Original	PDF	99.78KB	6
MMBT5551LT1	On Semiconductor	Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Bipolar, NPN, High voltage, 160V (BR), 50mA, Pkg Style SOT23	Scan	PDF	49.55KB	1
MMBT5551LT1G	On Semiconductor	Small Signal High Voltage Transistor-NPN; Package: SOT-23 (TO-236) 3 LEAD; No of Pins: 3; Container: Tape and Reel; Qty per Container: 3000	Original	PDF	155.8KB	5
MMBT5551LT1G	On Semiconductor	Small Signal NPN	Original	PDF	99.78KB	6

MMBT5551LT1 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
1N914 Abstract: MMBT5550 MMBT5550LT1 MMBT5551 MMBT5551LT1 Contextual Info: LESHAN RADIO COMPANY, LTD. High Voltage Transistors NPN Silicon 3 COLLECTOR MMBT5550LT1 MMBT5551LT1 1 BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO 140 Vdc Collector–Base Voltage V CBO 160 Vdc Emitter–Base Voltage	Original	MMBT5550LT1 MMBT5551LT1 236AB) 1N914 MMBT5550 MMBT5550LT1 MMBT5551 MMBT5551LT1	PDF
Contextual Info: High Voltage Transistors NPN Silicon 3 COLLECTOR MMBT5550LT1 MMBT5551LT1 1 BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO 140 Vdc Collector–Base Voltage V CBO 160 Vdc Emitter–Base Voltage V 6.0 Vdc 600 mAdc 3	Original	MMBT5550LT1 MMBT5551LT1 236AB)	PDF
1N914 Abstract: MMBT5550 MMBT5550LT1 MMBT5551 MMBT5551LT1 Contextual Info: ON Semiconductort MMBT5550LT1 MMBT5551LT1 High Voltage Transistors NPN Silicon MMBT5551LT1 is a Preferred Device 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 140 Vdc Collector–Base Voltage VCBO 160 Vdc Emitter–Base Voltage	Original	MMBT5550LT1 MMBT5551LT1 MMBT5551LT1 r14525 MMBT5550LT1/D 1N914 MMBT5550 MMBT5550LT1 MMBT5551	PDF
MMBT5551LT1 Contextual Info: MMBT5551LT1 NPN Silicon Epitaxial Planar Transistors for high voltage amplifier applications. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25oC Symbol Value Unit Collector Emitter Voltage VCEO 160 V Collector Base Voltage VCBO 180 V Emitter Base Voltage	Original	MMBT5551LT1 OT-23 100MHz 15kHZ MMBT5551LT1	PDF
Contextual Info: MMBT5550LT1, MMBT5551LT1 MMBT5551LT1 is a Preferred Device High Voltage Transistors NPN Silicon http://onsemi.com Features • Pb−Free Package is Available COLLECTOR 3 MAXIMUM RATINGS Rating Symbol 5550 5551 Unit Collector −Emitter Voltage VCEO 140 160	Original	MMBT5550LT1, MMBT5551LT1 MMBT5551LT1 MMBT5550LT1/D	PDF
MMBT5551LT1 Contextual Info: MMBT5551LT1 NPN Silicon Epitaxial Planar Transistors for high voltage amplifier applications. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25oC Symbol Value Unit Collector Emitter Voltage VCEO 160 V Collector Base Voltage VCBO 180 V Emitter Base Voltage	Original	MMBT5551LT1 OT-23 100MHz 15kHZ MMBT5551LT1	PDF
MMBT5551LT1G Abstract: sot-23 Marking M1F 1N914 MMBT5550 MMBT5550LT1G MMBT5551 MMBT5551LT3G Contextual Info: MMBT5550LT1G, MMBT5551LT1G High Voltage Transistors NPN Silicon http://onsemi.com Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS COLLECTOR 3 Compliant MAXIMUM RATINGS Rating Collector −Emitter Voltage Collector −Base Voltage	Original	MMBT5550LT1G, MMBT5551LT1G MMBT5550 MMBT5551 MMBT5550LT1/D MMBT5551LT1G sot-23 Marking M1F 1N914 MMBT5550 MMBT5550LT1G MMBT5551 MMBT5551LT3G	PDF
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT—23 MMBT5551LT1 1. BASE TRANSISTOR（ NPN ） 2. EMITTER 3. COLLECTOR FEATURES １．０ Power dissipation PCM : 0.3 W（Tamb=25℃） Collector current ICM: 0.6	Original	OT-23 MMBT5551LT1 MMBT5551LT1 100MHz	PDF
1N914 SOT-23 Abstract: MMBT550LT1 Contextual Info: MMBT5550LT1, MMBT5551LT1 MMBT5551LT1 is a Preferred Device High Voltage Transistors NPN Silicon http://onsemi.com Features • Pb−Free Package is Available COLLECTOR 3 MAXIMUM RATINGS Symbol 5550 5551 Unit Collector −Emitter Voltage Rating VCEO 140 160	Original	MMBT5550LT1, MMBT5551LT1 MMBT5551LT1 OT-23-3 1N914 SOT-23 MMBT550LT1	PDF
1N914 Abstract: MMBT5550 MMBT5550LT1 MMBT5551 MMBT5551LT1 Contextual Info: ON Semiconductort MMBT5550LT1 MMBT5551LT1* High Voltage Transistors NPN Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 140 Vdc Collector–Base Voltage VCBO 160 Vdc Emitter–Base Voltage	Original	MMBT5550LT1 MMBT5551LT1* r14525 MMBT5550LT1/D 1N914 MMBT5550 MMBT5550LT1 MMBT5551 MMBT5551LT1	PDF
MMBT5551LT1 Abstract: motorola S MMBT5551 G1 MMBT5550 Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage T ransistors MMBT5550LT1 MMBT5551LT1* NPN Silicon ‘Motorola Preferred Device 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage v CEO 140 Vdc Collector-Base Voltage VCBO 160 Vdc	OCR Scan	MMBT5550LT1 MMBT5551LT1* --236AB) MMBT5551LT1 MMBT5551LT1 motorola S MMBT5551 G1 MMBT5550	PDF
2N5551S Abstract: MMBT5551LT1 Contextual Info: MMBT5551LT1 NPN EPITAXIAL SILICON TRANSISTOR SOT-23 3 HIGH VOLTAGE TRANSISTOR o 1 Collector Dissipation:Pc-225mW Ta=25 Collector-Emiller Voltage: V CEO= 160V 2 1. 1.BASE 2.EMITTER 3.COLLECTOR 0.4 0.95 0.95 2.9 1.9 2.4 1.3 Unit:mm o ABSOLUTE MAXIMUM RATINGS	Original	MMBT5551LT1 OT-23 Pc-225mW 100mA 2N5551S MMBT5551LT1	PDF
transistor 25 Abstract: transistor mmbt5551lt1 Contextual Info: MMBT5551LT1 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR * Collector Dissipation: Pc=225mW Ta=25℃ * Collector-Emitter Voltage :Vceo=160V ABSOLUTE MAXIMUM RATINGS at Ta=25℃	Original	MMBT5551LT1 225mW OT-23 transistor 25 transistor mmbt5551lt1	PDF
sot-23 Marking G1 Abstract: MMBT5551LT1 Contextual Info: @vic SOT-23 Plastic-Encapsulate Transistors MMBT5551LT1 TRANSISTOR NPN SOT-23 1. BASE FEATURES 2. EMITTER 3. COLLECTOR W (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current ICM: 0.6 A Collector-base voltage 180 V V(BR)CBO: Operating and storage junction temperature range	Original	OT-23 MMBT5551LT1 OT-23 100MHz MMBT5551LT1 sot-23 Marking G1	PDF

MBT5551LT1 Abstract: MBT5551L T0236AB Contextual Info: M O TO RO LA SEMICONDUCTOR TECHNICAL DATA High V oltage T ransistors NPN Silicon MMBT5550LT1 MMBT5551LT1* COLLECTOR 3 ‘M otorola Preferred D evice 2 MAXIMUM RATINGS EMITTER Symbol Value Unit Collector-Emitter Voltage Rating v C EO 140 Vdc Collector-Base Voltage	OCR Scan	MMBT5550LT1 MMBT5551LT1* T0-236AB) 225rola MBT5550LT1 MBT5551LT1 1N914 MBT5551LT1 MBT5551L T0236AB	PDF
Contextual Info: MAXIMUM RATINGS Symbol Value Unit C o llector-E m itter Voltage Rating v CEO 140 Vdc Collector-Base Voltage v CBO 160 Vdc Em itter-Base Voltage Vebo 6.0 Vdc ic 600 m Adc C ollector C urrent — Continuous MMBT5550LT1 MMBT5551LT1* CASE 318-07, STYLE 6 SOT-23 TO-236AB	OCR Scan	MMBT5550LT1 MMBT5551LT1* OT-23 O-236AB) MBT5550 MMBT5551 MMBT5550	PDF
Contextual Info: MMBT5551LT1 NPN Silicon Epitaxial Planar Transistors for high voltage amplifier applications. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25oC Symbol Value Unit Collector Emitter Voltage VCEO 160 V Collector Base Voltage VCBO 180 V Emitter Base Voltage	Original	MMBT5551LT1 OT-23 100MHz 15kHZ	PDF
On semiconductor date Code sot-23 Abstract: IC data book free download sot-23 body marking A 4 TO-236 sot-23 Marking G1 Tape and Reel Packaging Specifications Code sot-23 on semiconductor 1N914 transistor data sheet free download G1 SOT-23 marking codes transistors a1 sot-23 Contextual Info: MMBT5550LT1, MMBT5551LT1 Preferred Device High Voltage Transistors NPN Silicon http://onsemi.com Features •ăPb-Free Packages are Available COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Collectorā-āEmitter Voltage Value VCEO MMBT5550 MMBT5551 Collectorā-āBase Voltage	Original	MMBT5550LT1, MMBT5551LT1 MMBT5550 MMBT5551 MMBT5550LT1/D On semiconductor date Code sot-23 IC data book free download sot-23 body marking A 4 TO-236 sot-23 Marking G1 Tape and Reel Packaging Specifications Code sot-23 on semiconductor 1N914 transistor data sheet free download G1 SOT-23 marking codes transistors a1 sot-23	PDF
1N914 Abstract: MMBT5550 MMBT5550LT1 MMBT5551 MMBT5551LT1 MMBT5551LT1G MMBT5551LT3 5551 SOT-23 Contextual Info: MMBT5550LT1, MMBT5551LT1 MMBT5551LT1 is a Preferred Device High Voltage Transistors NPN Silicon http://onsemi.com Features • Pb−Free Package is Available COLLECTOR 3 MAXIMUM RATINGS Rating Symbol 5550 5551 Unit Collector −Emitter Voltage VCEO 140 160	Original	MMBT5550LT1, MMBT5551LT1 MMBT5551LT1 MMBT5550LT1/D 1N914 MMBT5550 MMBT5550LT1 MMBT5551 MMBT5551LT1G MMBT5551LT3 5551 SOT-23	PDF
Contextual Info: SyrnSEM i SOT -23 Plastic Encapsulate Transistors 5YM5EMI SEMICONDUCTOR MMBT5551LT1 TRANSISTOR NPN FEATURES Power dissipation PCM : 03 W (Tamb=25 °C) Collector current ICM: 0.6 A Collector base voltage V ( b r ) cbo : 180 V Operating and storage junction temperature range	OCR Scan	MMBT5551LT1 MMBT5551LTl	PDF
2N5551S Abstract: MMBT5551LT1 Contextual Info: MMBT5551LT1 NPN EPITAXIAL SILICON TRANSISTOR SOT-23 3 HIGH VOLTAGE TRANSISTOR o 1 Collector Dissipation:Pc-225mW Ta=25 Collector-Emiller Voltage: V CEO= 160V 2 1. 1.BASE 2.EMITTER 3.COLLECTOR 0.4 0.95 0.95 2.9 1.9 2.4 1.3 Unit:mm ABSOLUTE MAXIMUM RATINGS	Original	MMBT5551LT1 OT-23 Pc-225mW 300uS 2N5551S 100mA MMBT5551LT1	PDF
1n914 SOD123 Abstract: sot-23 MARKING CODE G1 Sc59 Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Transistors MMBT5550LT1 MMBT5551LT1* COLLECTOR 3 NPN Silicon *Motorola Preferred Device 1 BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 140 Vdc Collector – Base Voltage	Original	MMBT5550LT1 MMBT5551LT1* 236AB) 22NOT 1n914 SOD123 sot-23 MARKING CODE G1 Sc59	PDF
1N914 Abstract: MMBT5550 MMBT5550LT1 MMBT5551 MMBT5551LT1 Contextual Info: MOTOROLA Order this document by MMBT5550LT1/D SEMICONDUCTOR TECHNICAL DATA High Voltage Transistors MMBT5550LT1 MMBT5551LT1* COLLECTOR 3 NPN Silicon *Motorola Preferred Device 1 BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage	Original	MMBT5550LT1/D MMBT5550LT1 MMBT5551LT1* 236AB) MMBT5550LT1/D* 1N914 MMBT5550 MMBT5550LT1 MMBT5551 MMBT5551LT1	PDF
MMBT5551LT1G Abstract: 1N914 MMBT5550 MMBT5550LT1G MMBT5551 MMBT5551LT3G MMBT5550LT1 4rc10 Contextual Info: MMBT5550LT1G, MMBT5551LT1G High Voltage Transistors NPN Silicon http://onsemi.com Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS COLLECTOR 3 Compliant MAXIMUM RATINGS Rating Collector −Emitter Voltage Collector −Base Voltage	Original	MMBT5550LT1G, MMBT5551LT1G MMBT5550 MMBT5551 MMBT5550LT1/D MMBT5551LT1G 1N914 MMBT5550 MMBT5550LT1G MMBT5551 MMBT5551LT3G MMBT5550LT1 4rc10	PDF

MMBT5551LT1 Search Results

MMBT5551LT1 Datasheets (8)

MMBT5551LT1 Datasheets Context Search

1N914

1N914

MMBT5551LT1

MMBT5551LT1

MMBT5551LT1G

1N914 SOT-23

1N914

MMBT5551LT1

2N5551S

transistor 25

sot-23 Marking G1

MBT5551LT1

On semiconductor date Code sot-23

1N914

2N5551S

1n914 SOD123

1N914

MMBT5551LT1G