MPS652 Search Results

2n2222 to-92

Abstract: 2N4970 MPS3393 2N2219 transistor PN2218 2n2222 to92 2N4954 FR 9024 MMBT3704 PN2219
Contextual Info: NATL SEMICOND DISCRETE H2E D M T -Z l-ai t,SD1130 0D37772 3 • NPN General Purpose Transistors by Ascending Vceo (continued) Part Type MPS3393 MPS3394 MPS3395 MPS3396 MPS3397 MPS3398 MPS5172 MPS6515 MPS6520 MPS6521 MPS6522 MPS6560 PE4010 PE8050 PN3565 PN5135

2n4249

Abstract: 2N4965 se7055 2N4250 2N244 2N4248 SE706 2N2443 2n4250 TO-106 2n3742
Contextual Info: TR A N SISTO RS—SMALL SIGNAL PNP LOW LEVEL, LOW NOISE AMPLIFIER TRANSISTORS BY ASCENDING VC EO PLASTIC PACKAGE TYPE VOLTS hpE MIN M IN -M A X NF hpE hFE v CEO h FE *C @ •c MIN - MAX mA mA dB @ MAX NF f dB kHz MAX f @ PACKAGE kHz MPS6523 25 150 @0.10

Contextual Info: SAMSUNG SEMICONDUCTOR INC MPS6523 14E O | 7 elt14 m ¿ 0007356 3 PNP EPITAXIAL SILICON TRANSISTOR T -29-21 AMPLIFIER TRANSISTOR • Coltector-Emltter Voltags: Vc£o =25V • Collector Dissipation: I Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic

ps6522

Contextual Info: N AMER PHILIPS/DISCRETE b'lE D h h a i ^ l DOEfiDDS 7E1 M PS6522 M P S 6523 APX J V SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P small-signal transistors in plastic TO-92 envelope intended for low-noise applications in audio equipment. Complementary types are MPS6520 and MPS6521.

Contextual Info: One. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.SA MPS6651 MPS652 PNP MPS6601 MPS6602 NPN MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage MPS6601/6651 MPS6602/B652 VCEO Collector-Bale Voltage

Contextual Info: MPS 6520 thru’ MPS 6523 COMPLEMENTARY r- SILICON TRANSISTORS MPS6520, MPS6521 NPN and MPS6522, MPS6523 (PNP) are complementary silicon planar epitaxial transistors designed for general purpose amplifier applications and for complementary circuitry. ABSOLUTE MAXIMUM RATINGS

MPS6522

Abstract: mps-6522 MPS6520 MPS6521 MPS6523
Contextual Info: il il u iv ir w wv/<.w COMPLEMENTARY SILICON TRANSISTORS MPS6520, MPS6521 NPN and MPS6522, MPS6523 (PNP) are complementary silicon planar epitaxial transistors designed for general purpose amplifier applications and for complementary circuitry. ABSOLUTE MAXIMUM RATINGS

2N3904

Abstract: MPS6520 10v200
Contextual Info: SAMSUNG SEMICONDUCTOR INC 1_*»E D MPS6520 j ? ci { , 4 1 4 2 0007325 fl | NPN EPITAXIAL SILICON TRANSISTOR T-29-21 AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: Veto=25V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=250C) r

Contextual Info: MAXIMUM RATINGS Rating Symbol C o lle c to r -E m itte r V o lta g e NPN PNP M P S 6 5 2 0 , MPS6521 M P S 65 2 3 C o lle c to r-B a s e V o lta g e Unit 25 25 V dc v CB0 40 M P S 65 2 0, M P S 6521 M P S 65 2 3 25 Vebo 4.0 V dc C o lle c to r C u rre n t — C o n tin u o u s

MPS6521-D equivalent

Abstract: MPS6523 1N916 MPS6521
Contextual Info: ON Semiconductort NPN MPS6521* PNP MPS6523 Amplifier Transistors COLLECTOR 3 COLLECTOR 3 2 BASE 2 BASE Voltage and current are negative for PNP transistors 1 EMITTER 1 EMITTER MAXIMUM RATINGS *ON Semiconductor Preferred Device Rating Symbol Collector–Emitter Voltage

Contextual Info: Small Signal Low Noise Transistors Part No. BC238 BC239 2N4124 2N5089 MPS6521 2N4123 2N5088 MPSA18 2N5210 2N5961 2N4410 BC308 BC309 2N4126 MPS6523 2N4125 PN4248 PN4250 2N5086 2N5087 20070515 Polarity NPN PNP V (A) hFE @ VCE & IC NF Max. Condition IC VCE

PN2222N

Abstract: CBVK741B019 F63TNR MPS6523 PN200
Contextual Info: MPS6523 C TO-92 BE PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 68. See PN200 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

MPS6522

Abstract: MPS6523 MPS6520 MPS6521
Contextual Info: MPS6522 MPS6523 V PHILIPS INTERNATIONAL SbE D I 711002b 00M25D4 H57 « P H I N - P 2 9 - Z / SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P small-signal transistors in plastic TO-92 envelope intended for low-noise applications in audio equipment. Complementary types are MPS6520 and MPS6521.

MPS6520

Abstract: MPS6521 MPS6523
Contextual Info: MPS6520 MPS6521 PHILIPS INTERNATIONAL S bE D 711DÛSti 0 Q 4 2 5 D 2 bö4 H P H I N SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N small-signal transistors in plastic TO-92 envelope intended for low-noise applications in audio equipment. Complementary types MPS6522 and MPS6523.

828 npn

Abstract: MPS6523
Contextual Info: ON Semiconductort NPN MPS6521* PNP MPS6523 Amplifier Transistors COLLECTOR 3 COLLECTOR 3 2 BASE 2 BASE Voltage and current are negative for PNP transistors 1 EMITTER 1 EMITTER MAXIMUM RATINGS *ON Semiconductor Preferred Device Rating Symbol Collector–Emitter Voltage

Contextual Info: S E M IC O N D U C T O R . MPS6523 PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 68. See PN200 for characteristics. Absolute Maximum RatinQS

MPS6522

Abstract: MPS6521 MPS6520 MPS6523
Contextual Info: N AMER PHILIPS/DISCRETE b'ìE D • bbS3T31 DOEÔGGS 721 I IAPX MPS6522 MPS6523 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P small-signal transistors in plastic TO-92 envelope intended fo r low-noise applications in audio equipment. Complementary types are MPS6520 and MPS6521.

Contextual Info: TO-92 Plastic Package Transistors NPN Maximum Ratings Type No. MPS6521 ^CBO (V) Min ^CEO (V) Min ^EBO (V) Min 40 25 4 Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) Pd (W) (A) @Tc=25°c 0.625 0.1 'cBO m ^CB (V) Max 0.05 'c e s (|iA)

MPS6523

Abstract: MPS6522 mps65 MPS6520 MPS6521
Contextual Info: MPS6520, MPS6521 NPN SILICON MPS6522, MPS6523 PNP SILIC O N C O M PLEM EN T A R Y A M P L IF IE R T R A N SIST O R S SILIC O N A N N U L A R T R A N SIST O R S . . . designed for general-purpose amplifier applications and for com ­ plementary circuitry.

MPS6522

Abstract: MPS6520 MPS6521 MPS6523
Contextual Info: MPS6520, MPS652.1, MPS6522, MPS6523 continued MPS6S20, MPS6521 (NPN) ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit b v Ce o 25 — — Vdc bvebo 4.0 — Vdc OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage

Contextual Info: MPS6523 C TO-92 BE PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 68. See PN200 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

Contextual Info: SAMSUNG SEMICONDUCTOR INC l^E 0 MPS6520 £ 7^134142 0 G Q 7 3 2 5 Ô | NPN EPITAXIAL SILICON TRANSISTOR T-29-21 AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: Veto=25V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) \ Characteristic

Contextual Info: FAIRCHILD SE MICONDUCTOR MPS6520/FTSG6S20 MPS6521/FTS06521 FAIRCHILD A Schlumberger Company NPN Small Signal General Purpose Amplifiers „p_ « V ceo . . . 25 V Min hFE . . . 100 (Min) (MPS/FTS06520), 1S0 (Min) (MPS/FTS06521) @ 100 pA e H fe . . . 200-400 (MPS/FTS06520), 300-600 (MPS/FTS06521)

MPSA52

Abstract: MPS6521 300TYP MPS6520 MPS6522 400TYP
Contextual Info: DataSheat MPS6520 MPS6521 C G IK K I1 Semiconductor Corp. 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 NPN SI LI CON TRANSISTOR Manufacturers of World Class Discrete Semiconductors JEDEC TO-92 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR MPS6520, MPS6521 typ es a re NPN S i l i c o n