MRF890 Search Results

Contextual Info: MOTOROLA Order this document by MRF890/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistors MRF890 Designed for 24 volt UHF large–signal, common–emitter amplifier applications in industrial and commercial FM equipment operating in the range of

mrf890

Contextual Info: MRF890 NPN SILICON RF POWER TRANSISTOR E DESCRIPTION: PACKAGE STYLE .205 4L STUD The ASI MRF890 is Designed for UHF Class A Amplifier Applications in Cellular Base Station Equipment. D 2 1 3 A C FEATURES: B • Pg = 9.0 dB min. @ 900 MHz • P1dB = 2.0 Watts min. at 900 MHz

mrf890

Contextual Info: MRF890 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .205 4L STUD The ASI MRF890 is Designed for UHF Class A Amplifier Applications in Cellular Base Station Equipment. C E FEATURES: • Pg = 9.0 dB min. @ 900 MHz • P1dB = 2.0 Watts min. at 900 MHz

MC68B21CP

Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
Contextual Info: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References

MHW707-2

Abstract: MHW707-1 MRF947T1 equivalent mhw704 CR2428 MHW591 MHW592 MHW593 MHW707 MRF861
Contextual Info: RF Products In Brief . . . While Motorola is considered to be the supermarket for semiconductor products, there is not a category in which the selection is more diverse, or more complete, than in products designed for RF system applications. From MOS, bipolar

Motorola transistors MRF646

Abstract: Mrf648 Motorola transistors MRF648 MRF646 MRF648 applications MRF754 MRF846 MRF839 MRF515 MRF644
Contextual Info: RF PRODUCTS — BIPOLAR POWER TRANSISTORS continued <C^, TO-22Q 333-03 UHF Applications (continued) 317-01 407-512 MHz, UHF FM Transistors Higher power output devices in this UHF power transistor series feature internally input-matched construction, are designed

Motorola transistors MRF 947

Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
Contextual Info: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that

triac zd 607

Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

TP3008

Abstract: TP3034 TP3007 MRF898 TP3020A TP1301 tp3061 MRF890 MRF896 MRF896S
Contextual Info: MOTOROLA SC X S T R S / R F 4 bE D • b3b?2S4 00*5304? 2 «MOTb 7=33’OI RF Power Bipolar Transistors — 900 MHz Transistors (continued) 8 0 6 -9 6 0 MHz BAND (continued) Device Pout Output Power Watts Class Pin Input Power Watts Gp (MlnyFreq. Power Gain

2N4427 equivalent bfr91

Abstract: bfr90 equivalent 2N5503 MRA1600-30 TPV-595A 2N3553 equivalent MRF477 equivalent MRA0500-19L 2N6084 equivalent MOTOROLA TRANSISTOR MRF239
Contextual Info: RF Power TMOS FETs Motorola RF Power MOSFETs, trademark TMOS , are constructed using a planar process to enhance manufacturing repeatability. They are N-channet field effect transistors with an oxide insulated gate which controls vertical current flow. Compared with bipolar transistors, RF Power FETs exhibit higher gain, higher input impedance, enhanced therm al stability

tp2304

Abstract: TPV3100 TP9383 TP2330 MRF2001 PT9783 PT9780 tp8828f BLY93A mrf 406 application circuit
Contextual Info: ASI Part Number AM1214-100 AM1214-200 AM1214-325 AM80912005 AM80912015 AM80912030 AM80912085 AM80912150 AM81214006 AM81214015 AM81214030 AM81214060 BLF147 BLF175 BLF177 BLF242 BLF244 BLF245 BLF246 BLF278 BLF368 BLU11/SL BLU15/12 BLU20/12 BLU30/12 BLU45/12

motorola mrf237

Abstract: MOTOROLA SELECTION mrf237 MRF846 MRF229 2N3553 motorola MRF627 MRF227 MRF237 MRF604 2N4427
Contextual Info: RF SMALL-SIGNAL TRANSISTORS continued Class C Amplifiers The transistors listed in these tables are specified for operation in Class C RF power am plifier circuits. The tables are arranged by increasing frequency of operation first, then by increasing output power.

MLED96

Abstract: BRX49 SCR MRF549 ATV5030 MRF660 MRF548 mmbr2857lt1 CR2428 MPF3822 MRF548 MOTOROLA
Contextual Info: ALPHANUMERIC INDEX DEVICE ATV5030 ATV5090B ATV6031 ATV6060H ATV7050 BAL99LT1 BAS16LT1 BAS21LT1 BAV70LT1 BAV74LT1 BAV99LT1 BAW56LT1 BC107,A,B BC109C BC177B BC182 BC212 BC237B BC239 BC307B BC327 BC328 BC337 BC338 BC368 BC369 BC373 BC489 BC490 BC517 BC546,A,B

transistor Kd 505

Abstract: mrf890 MRF890 test fixture
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA T h e R F Line 2.0 W 900 MHz RF POWER TRAN SISTO R NPN SILICON RF POWER TRANSISTOR NPN SILICO N . d e s ig n e d fo r 2 4 v o lt UHF la rg e -s ig n a l, c o m m o n -e m itte r a m p lifie r a p p lic a tio n s in in d u s tria l a n d c o m m e rc ia l F M e q u ip m e n t o p e ra tin g

MRF890

Abstract: F890S
Contextual Info: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA M R F890 M R F890S The RF Line NPN S ilico n RF P o w er T ran sisto rs . . . designed for 24 volt UHF large-signal, common-emitter amplifier applica­ tions in industrial and commercial FM equipment operating in the range of

MRF846

Abstract: CASE 305A-01 MRF844 MRF870A 305a MRF839 mrf892 305a-01 case 244-04 case 317-01
Contextual Info: RF PRODUCTS — EJIPOLAR POWER TRANSISTORS continued CASE 244-04 (.280'' Stud; CASE 305A-01 ( 204" Pill) CASE 305-01 (.204" Stud) CASE 319-04 (CS-12) CASE 317-01 (Macro-X) UHF: Applications (continued) _ I 8 0 6 -9 6 0 MHz, FM Transistors Designed specifically for the 800 MHz mobile radio band, types MRF840 through 846 offer superior gain and ruggedness, using

A5 GNE mosfet

Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistors Designed for 24 voll UHF large-signal, com m on-em itter am plifier applica­ tions in industrial and com m ercial FM equipm ent operating in the range of 8 0 4 -9 6 0 MHz.

TPV3100

Abstract: TP3024A HF power amplifier TPV3100 PT9783 MRF466 mrf4070 tp9383 tp2304 mrf433 MRF492A
Contextual Info: TABLE OF CONTENTS INTRODUCTION iii GENERAL INFORMATION iv QUALITY ASSURANCE & RELIABILITY v PRODUCT INDEX Alphanumeric vi RF POWER TRANSISTORS ! ! ! ! ! ! ! ! ! ! ! HF SSB HF MOSFETS VHF VHF & UHF MOSFETS UHF UHF MILITARY PULSED AVIONICS PULSED RADAR CW MICROWAVE

TXD10K40

Abstract: TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G
Contextual Info: N AMER PHILIPS/DISCRETE 86 BSE D • X'Ql-oX bbS3131 QOlbSbH 4 ■ General Information CROSS REFERENCE GUIDE INDUSTRY PART NUMBER PG. NEAREST EQUIV. NO. 0105-50 0204-50 0510-25 12F5 12F5R BLU52 BLU52 BLV97 BYX99-300 BYX99-300R 12F10 12F10R 12F20 12F20R 12F40