N 255C Search Results

UJT 2N4871

Abstract: transistor 2n4871 UJT 2N4870 2N4870 2N4871 ZN4871 2N4810 100S 2N487 ABB thyristor 5
Contextual Info: 2IM4870 2N4871 PIM U n iju n ctio n T ra n s is to rs S ilico n U n iju n ctio n T ra n sis to rs . . . . designed for pulse and timing circuits, sensing circuits, and thyristor trigger circuits. These devices feature: . • • • • • Low Peak Point Current — 1 nA Typical

SN7413

Abstract: SN7413 equivalent sn74/sn54 specification SN54LS13 SW7413 SPJ7 SDLS046 SN5413 SN74 SN74LS13
Contextual Info: S N 5 4 1 3 , S N 5 4 L S 1 3, S N 7 4 1 3 , S N 7 4 L S 1 3 D U A L 4-INPUT P O S I T I V E N A N D S C HM IT T TR IGGERS SDLS046 DECEMBER 1 9 8 3 -F E V IS E D M ARC H 193 8 S N 5 4 1 3, S N 54LS 13 , . . J OR W PACKAGE S N 7 4 1 3 . . . N PACKAGE S N 74LS 13 . . D OR N PACKAGE

1008G

Contextual Info: CHOKE COILS 1008 SERIES W RA P A R O U N D TE R M IN A TIO N S W IR E TE R M IN A TIO N S A RE S P O T W E L D E D T O T U N G S T E N N IC KEL M ETA LLIZA TIO N W IT H G O LD FLA SH O P TIO N A L S O LD E R COAT A V AILABLE O N 8M M TAPE A N D REEL 5 % A N D 2 % TO LER A N C E AVAI A B L E

gw 6203

Abstract: ics gw 6203 cid vectra c str 6307 tim STR 6267 ic str 6307 STR 6253 alfa uv timer ASY 48 VI QT 239
Contextual Info: Profaca U V ectra BASIC is H e w le tt-P a c k a rd 's im p le m e n ta tio n o f th e GYV BASIC in te r p re te r fro m M icrosoft C o rp o ra tio n . Vectra BASIC is a n e x te n s io n to s ta n d a rd BASIC a n d tak es a d v a n ta g e o f th e facilities o ffe re d by 16-bit processors. Im p le m e n te d featu res

transistors BC 557C

Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555
Contextual Info: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and

UJT 2N4871

Abstract: 2N4871 UJT 2N4870 2N4871 motorola 2N4870 ZN4871 motorola eb20 data 2n4870 transistor 2n4871 transistor 2n4870
Contextual Info: MOTOROLA SC DI OD ES /O PT O 3TE D m b3b75SS DDflEtiSS 7 « 1 1 0 X 7 N O T R E C O M M E N D E D FOR N EW D E S IG N S PN U n iju n c tio n Transistors Silicon Unijunction Transistors T-37-Jll| 2 IM 4 8 7 0 2N 4871 . . . . designed for pulse and timing circuits, sensing circuits, and thyristor trigger

VAM109

Abstract: MVAM109 MVAM115 mvam108 C1C9
Contextual Info: MVAM108* MVAM109* MVAM115* MVAM125* SILICON TUNING DIODES . . . d e sig n e d fo r e le ctro n ic tu n in g o f AM receivers and high capacitance, h ig h tu n in g ra tio a pp licatio n s. • H igh C apacitance R atio — C r = 15 M in , M VAM 108, 115, 125

2N6784

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information 2N 6784 P o w e r Field E ffe c t T ra n sisto r N-Channel Enhancement-Mode Silicon Gate TMOS N -C H A N N E L T M O S PO W ER FE T . . . desig ned fo r high vo ltag e , high speed p o w er sw itch in g

MC3301

Abstract: LM390
Contextual Info: LM2900, LM3900 LM2901 LM2902 LM2903 LM2904 F o r S p ecificatio n s. S ee M C 3301 D ata. F o r S p ecificatio n s, S ee L M 139 D ata. MC1414 MC1514 F o r S p ecificatio n s. S ee L M 1 2 4 D ata. F or S p ecificatio n s. S ee L M 193 F or S p ecificatio n s, S ee L M 158

BUY69A

Abstract: RCA-BUY69 BUY69 BUY69B BUY69C SOLID STATE TRANSISTORS C633H
Contextual Info: E SOLID STATE" ~0l 3875081 G E SOLID STATE 5T~|3fl750fll D017faBfi fa J - 01E 17628 D Y -Ï3-C Z Pro Electron Power Transistors File Num ber 1237 BUY69A, BUY69B, BUY69C H ig h V o lta g e S ilic o n N - P - N * P o w e r T ra n s is to rs terminal designations

BUZ90

Abstract: BUZ90 MOSFET LSE 0405
Contextual Info: MOTOROLA SEM IC O N D U C T O R TECHNICAL DATA BUZ90 P o w e r Field E ffe ct T ra n sisto r N-Channel Enhancement-Mode Silicon Gate T his T M O S IV P o w e r FET is d e s ig n e d fo r high vo ltag e, high sp eed, lo w loss p o w e r sw itch in g a p p licatio n s such as

3310H transistor

Abstract: transistor sr52 IN60 PACKAGE P48ab TMS 2370 ltcc 3110h 3310H fpi bus Transistor 3310H
Contextual Info: U s e r ’ s M a n u a l , V 2 .0 , F e b . 2 0 0 1 TC1775 System Units 32-Bit Single-Chip Microcontroller Microcontrollers N e v e r s t o p t h i n k i n g . Edition 2001-02 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München, Germany

AX334

Contextual Info: > n > j x i y n High Speed Quad SPST Analog S w itch T he M AX334 is a quad s in g le -p o le -s in y le -th ro w , n o rm a lly closed SPST, NC analog sw itch, pin co m ­ p atible with the H arris HI-2G1HS and S ilico n ix DG271. The M AX334 has g u a ra n te e d b re a k -b e fo re -m a k e

NE515K

Abstract: ne515
Contextual Info: DESCRIPTION FEATURES The 515 is a general purpose h igh -ga in a m p lifie r w ith d iffe re n tia l in p u t and o u tp u t. It is fa b ric a te d w ith in a m o n o lith ic s ilic o n substrate by p lan ar and e p itaxial te c h ­ niques. A p a ir o f com p e n s a tio n p o in ts is

MRF69

Contextual Info: MOTOROLA m SEM IC O N D U C T O R TECHNICAL DATA 2N6986 The RF Line IMPN S ilic o n P u sh -P u ll RF P o w e r T ra n sisto r 100 WATTS. 30-500 MHz CONTROLLED " Q " BROADBAN D PUSH-PULL RF POW ER TRAN SISTOR N PN SILICON . . d e sign e d prim arily for w ide b and large-signal output and

ix 3394

Abstract: a78s40 IC LM 3390
Contextual Info: MOTOROLA /¿A78S40 • SEMICONDUCTOR TECHNICAL DATA UNIVERSAL SWITCHING REGULATOR SUBSYSTEM The /¿A78S40 is a m o no lithic-sw itching reg ulator su b syste m , p roviding all active fu n ctio n s n e ce ssa ry fo r a sw itch in g regulator syste m . Th e d evice co n sists of a tem p e rature co m p en sated v o lt­

LTS 543

Abstract: MC670 MC570 MC470 mc400 MC420 MC47 MC500 MC510 MC520
Contextual Info: EXPA N D A BLE D U A L 2 -W ID E 2 - IN P U T ’A N D - O R - I N V E R T " G A T E \ M TTL I MC500/400 series M C520 • M C570 M C420 • M C470 A .^ ne Slde ° * Ih ,s dUti d e vic e c o n sists o f tw o 2 -in p u t A N D gates O R e d to geth er and d riv in g an o u tp u t in­

A114

Abstract: A115 C101 JESD22 NLAS324 NLAS324US NLAS324USG
Contextual Info: NLAS324 Dual SPST Analog Switch, Low Voltage, Single Supply The NLAS324 is a dual SPST Single Pole, Single Throw switch, similar to 1/2 a standard 4066. The device permits the independent s e l e c t i o n o f 2 a n a l o g / d i g i t a l s i g n a l s . Av a i l a b l e i n t h e

Contextual Info: MOTOROLA • i SEM ICO NDUCTO R TECHNICAL DATA M R D 360 M R D 370 Photo Detectors Darlington Output . . . d esig n ed fo r a p p lica tio n sorte rs, s w itc h in g and lo g ic at lo w lig h t levels. • • • • • in in d u stria l in sp e ctio n , proce ssin g and c o n tro l, counters,

Contextual Info: NLAS324 Dual SPST Analog Switch, Low Voltage, Single Supply The NLAS324 is a dual SPST Single Pole, Single Throw switch, similar to 1/2 a standard 4066. The device permits the independent s e l e c t i o n o f 2 a n a l o g / d i g i t a l s i g n a l s . Av a i l a b l e i n t h e

ic T M 2313

Abstract: 2312t HDSP-2313 HLF6 HDSP2310 HDSP231x HNCP 37 hdsp-231x HDSP2312 MIL-D-87157
Contextual Info: HEWLETT-PACKARD i m E OE CMP NT S D • 4447504 OGÜbhSl T ■ H E R M E T IC , E X T E N D E D T E M P E R A T U R E R A N G E 5 .0 m m .20" 5 X 7 A L P H A N U M E R IC D IS P LA Y S HEWLETT PACKARD S T A N D A R D R ED Y E LLO W H IG H EFFICIENCY R ED

IRFD220

Abstract: 1RFD220 IRF022 IRFD221 IRFD222 IRFD223 F14E diode. f-14e
Contextual Info: MOTOROLA SC X S T R S /R F IM E D I b3b?aS4 G G Ö ci ? 2 3 fl | MOTOROLA • I S E M IC O N D U C T O R TECHNICAL DATA IR F D 2 2 0 IRFD221 IR F D 2 2 2 IR F D 2 2 3 Advance Information S m a ll-S ig n a l T M O S Field E ffe c t T ra n sisto rs N -Ch ann el Enh an cem en t-M ode

IRFZ30

Abstract: IRFZ32
Contextual Info: MOTOROLA • SEM ICO NDUCTOR TECHNICAL DATA IRFZ30 IRFZ32 P o w e r F ie ld E f f e c t T ra n s is to rs N -Channel Enhancem ent-M ode S ilico n G ate TM O S These TM O S P ow er FETs are designed fo r lo w vo ltag e , h ig h speed p o w e r s w itc h in g a p p lica tio n s such as sw itch in g

IRFD110

Abstract: irfd113
Contextual Info: MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA IRFD110 IRFD113 Advance Information S m a ll-S ig n a l T M O S Field E ffe c t T ra n s is to r 1 WATT TMOS FETs rDS on = 0.8 OHM 60 VOLTS rDS(on) = 0.6 OHM 100 VOLTS N-Channel Enhancem ent-M ode Silicon G ate TM O S 4-Pin DIP