NANOSECOND PULSE Search Results

j 201a

Contextual Info: GA200 GA200A GA201 GA201A SCRs Nanosecond Switching, Planar FEATURES • Rise Time; 10ns • Delay Time: 10ns • Recovery Time: 0.5 /is • Pulse Current: to 100A GB200 GB200A GB201 GB201A DESCRIPTION The Mlcroseml Nanosecond Thyristor Switch combines the turnon speed of logic level

GA201

Abstract: GA201A GA200 GA200A GB200 GB200A GB201 GB201A GR201A
Contextual Info: GA200 GA200A GA201 GA201A SCRs Nanosecond Switching, Planar FEATURES • Rise Time; 10ns • Delay Time: 10ns • Recovery Time: 0.5 /is • Pulse Current: to 100A GB200 GB200A GB201 GB201A DESCRIPTION The Mlcroseml Nanosecond Thyristor Switch combines the turnon speed of logic level

Contextual Info: SCRs GA300 GA300A GA301 GA301A Commercial Nanosecond Switching Planar FEATURES • Rise Time: 10ns • Delay Time: 10ns • Recovery Time: 0.5/<s • Pulse Current: to 100A • Turn-on with 20ns, 10mA gate pulse GB300 GB300A GB301 GB301A DESCRIPTION The Microsemi Nanosecond Thyristor Switch combines the tum-on speed of logic level

T018 Thyristor

Abstract: IC ST 201A
Contextual Info: SCRs GA200 GA200A GA201 GA201A Nanosecond Switching, Planar GB200 GB20 0A GB201 GB201A FEA TU RES DESCRIPTION • • • • • The Microsemi Nanosecond Thyristor Switch combines the turnon speed of logic level transistors with the high current switching capability inherent in SCRs. With this device

Contextual Info: SCRs GA300 GA300A GA301 GA301A Commercial Nanosecond Switching Planar GB300 GB300A GB301 GB301A FEATURES DESCRIPTION • • • • • The Microsemi Nanosecond Thyristor Switch combines the turn-on speed of logic level transistors with the high current switching capability inherent in SCRs. With this device

diode 944 lg

Abstract: B301A ga331 LT 943 diode 945 lg
Contextual Info: SCRs GA300 GA300A GA301 GA301A Commercial Nanosecond Switching Planar GB300 GB300A GB301 GB301A FEA TU RES DESCRIPTION • • • • • Unitrode’s Nanosecond Thyristor Switch combines the turn-on speed of logic level transistors with the high current switching capability inherent in SCRs. With this

Diode LT 432

Abstract: rgk 20/2 GA300 GA301 GA301A GB301 CA301A GA300A GB300 GB300A
Contextual Info: SCRs GA300 GA300A GA301 GA301A Commercial Nanosecond Switching Planar GB300 GB300A GB301 GB301A FEATURES DESCRIPTION • • • • • The Microsemi Nanosecond Thyristor Switch combines the turn-on speed of logic level transistors with the high current switching capability inherent in SCRs. With this device

GA201

Abstract: GB201 lcle 10 100S GA200 GA200A GA201A GB200 GB200A GB201A
Contextual Info: SCRs GA200 GA200A GA201 GA201A Nanosecond Switching, Planar GB200 GB200A GB201 GB201A FEATU RES D ESCR IPTIO N • • • • • The Unitrode Nanosecond Thyristor Switch combines the turn-on speed of logic level transistors with the high current sw itching capability inherent in SCRs. With

SCR 602

Abstract: "laser range finder" SCR AUTOMOTIVE APPLICATIONS SCR TRIGGER PULSE circuit UPGA301A SCR Gate Drive Board GE power SCR datasheet GE SCR ge scr package SCR TRIGGER PULSE
Contextual Info: UPGA301Ae3 Nanosecond SCR SWITCH SCOTTSDALE DIVISION KEY FEATURES DESCRIPTION Epoxy packaged, oxide passivated planar SCR chips with metallurgic bonds on both sides to achieve high reliability. Internal wire bond connection allows high current surge capability for narrow pulse

IRFF220

Abstract: TA9600 TB334
Contextual Info: IRFF220 Data Sheet March 1999 3.5A, 200V, 0.800 Ohm, N-Channel Power MOSFET • 3.5A, 200V • rDS ON = 0.800Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics

IRFF310

Abstract: TB334
Contextual Info: IRFF310 Data Sheet March 1999 1.35A, 400V, 3.600 Ohm, N-Channel Power MOSFET • 1.35A, 400V • rDS ON = 3.600Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics

Contextual Info: IRFP250 Semiconductor Data Sheet July 1999 33A, 200V, 0.085 Ohm, N-Channel Power MOSFET • 33A, 200V Ordering Information • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics

SCR TRIGGER PULSE TRANSFORMER

Abstract: thyristor SCR1 SCR TRIGGER PULSE circuit SCR PULSE TRANSFORMER digital triggering scr RC inductive load thyristor design pulse transformer for triggering SCR SCR TRIGGER PULSE scr transformer drive gate PFN DIODE
Contextual Info: MicroNote #601 George Repucci Senior Applications Engineer Nanosecond SCR Switch for Reliable High Current Pulse Generators and Modulators Design requirements for modulator and pulse generator circuits include fast rise time, low jitter to enhance short radar or laser ranging

Contextual Info: i 1N5806 1N5806US SENSITRON SEMICONDUCTOR JAN JANTX JANTXV TECHNICAL DATA DATA SHEET 158, REV B HERMETIC AXIAL LEAD RECTIFIER DESCRIPTION: 150 VOLT, 2.5 AMP, 25 NANOSECOND RECTIFIER MAX. RATINGS / ELECTRICAL CHARACTERISTICS specified._

5183

Abstract: 406L SL303100FR SL303100FRL
Contextual Info: SENSITRON _ SEMICONDUCTOR SL303100FR SL303100FRL TECHNICAL DATA DATA SHEET 5183, REV - THREE PHASE FULL WAVE BRIDGE RECTIFIER ASSEMBLY DESCRIPTION: 1000 VOLT, 20 AMP, 250 NANOSECOND THREE PHASE BRIDGE RECTIFIER ASSEMBLY. MAX. RATINGS / ELECTRICAL CHARACTERISTICS

10VJ

Abstract: IRFP450 TA17435 TB334
Contextual Info: IRFP450 Semiconductor Data Sheet July 1999 14A, 500V, 0.400 Ohm, N-Channel Power MOSFET • 14A, 500V • rDS ON = 0.40062 • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics

TA17421

Abstract: IRF140 datasheet IRF140 IRF140 INTERSIL
Contextual Info: IRF140 Data Sheet March 1999 28A, 100V, 0.077 Ohm, N-Channel Power MOSFET • 28A, 100V Formerly developmental type TA17421. • rDS ON = 0.077Ω • Single Pulse Avalanche Energy Rated • SOA is Power-Dissipation Limited • Nanosecond Switching Speeds

TOT - 4301

Abstract: LA 4303 IRFD320 TA17404 TB334
Contextual Info: IRFD320 Data Sheet July 1999 0.5A, 400V, 1.800 Ohm, N-Channel Power MOSFET • 0.5A, 400V • rDS ON = 1.800Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics

microchannel plate

Abstract: TP200 MICRON mcp
Contextual Info: Return To Product Page 51002 HIGH-TEMPERATURE ADVANCED PERFORMANCE TIME-OF-FLIGHT DETECTOR • High Performance, Fast Timing Detectors for TOF Mass Spectrometry • Bakeable to 350 C • Improved Mass Resolution • Sub-Nanosecond Pulse Widths • 18mm Collection Diameter

TA17441

Abstract: IRFF110 TB334
Contextual Info: IRFF110 Data Sheet March 1999 3.5A, 100V, 0.600 Ohm, N-Channel Power MOSFET • 3.5A, 100V • rDS ON = 0.600Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics

IRFD220

Abstract: TB334 la 4287
Contextual Info: IRFD220 Data Sheet July 1999 0.8A, 200V, 0.800 Ohm, N-Channel Power MOSFET • 0.8A, 200V • rDS ON = 0.800Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics

Contextual Info: IRF520 Semiconductor D ata S h eet June 1999 9.2A, 100V, 0.270 Ohm, N-Channel Power MOSFET • 9.2A, 100V Ordering Information • SOA is Power Dissipation Limited • Single Pulse Avalanche Energy Rated • Nanosecond Switching Speeds • Linear Transfer Characteristics

Contextual Info: SENSITRON _ SEMICONDUCTOR S10A360 TECHNICAL DATA DATA SHEET 308, REV - THREE PHASE FULL WAVE BRIDGE RECTIFIER ASSEMBLY DESCRIPTION: 600 VOLT, 11 AMP, 5000 NANOSECOND THREE PHASE BRIDGE RECTIFIER ASSEMBLY. MAX. RATINGS / ELECTRICAL CHARACTERISTICS RATING

single phase full wave rectifier

Abstract: SL30360S7 SL30360S7L 2-56 unc
Contextual Info: SL30360S7 SL30360S7L SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 192, REV - THREE PHASE FULL WAVE BRIDGE RECTIFIER ASSEMBLY DESCRIPTION: 600 VOLT, 20 AMP, 70 NANOSECOND THREE PHASE BRIDGE RECTIFIER ASSEMBLY. MAX. RATINGS / ELECTRICAL CHARACTERISTICS