NEW ENGLAND SEMICONDUCTOR Search Results

Contextual Info: 2N6259 ^ 1 W ^NEW ENGLAND SEMICONDUCTOR MAXIMUM RATINGS - Absolute-Maximum Values: * ^CBO. * ^ CEO.

Contextual Info: Contact Us New England Semiconductor manufactures a wide variety of Discrete Semiconductor Devices in its modern facility in Lawrence, Massachusetts. We are ISO 9001 and MIL-PRF-19500 JAN"S" level qualified company. Our Mission New England Semiconductor is dedicated to supplying high reliability and quality solid state discrete

Contextual Info: 2N6421 ^1 P *NEW ENGLAND SEMICONDUCTOR MAXIMUM RATINGS - Absolute-Maximum Values: • • VcBO_. VCE0 sus . • V e BO.

Contextual Info: JANS Program New Product Announcement New England Semiconductor announces its New Line of Junction Field Effect Transistors JFET's These devices will be available as JAN, JANTX, JANTXV as well as commercial. Available families are: MIL-PRF-19500/375 - 2N3821, 2N3822, 2N3823

Contextual Info: DirectFET  - A Proprietary New Source Mounted Power Package for Board Mounted Power by Andrew Sawle, Martin Standing, Tim Sammon & Arthur Woodworth, International Rectifier, Oxted, Surrey. England Abstract This paper will present a new power semiconductor

parallel connection of MOSFETs

Contextual Info: DirectFET  - A Proprietary New Source Mounted Power Package for Board Mounted Power by Andrew Sawle, Martin Standing, Tim Sammon & Arthur Woodworth, International Rectifier, Oxted, Surrey. England As Presented at PCIM 2001 Abstract This paper will present a new power semiconductor

tcscs

Abstract: scanlogic sl11 XC62HR3302MR SL11T 1N52288 3.3v smd regulator SL11-USB SL11 usb 2N2222A 48-PIN
Contextual Info: SL11/T USB Controllers Technical Reference ScanLogic Corporation 8 New England Executive Park Burlington, MA 01803 http://www.scanlogic.com ScanLogic Corporation SL11/T USB Controller Specification CONVENTIONS .5

NSF350

Abstract: NSF60708 NSF60808 NSF60809 NSF60812 NSF60910 NSF60911 NSF60913 NSF61011 NSF61011A
Contextual Info: NEW ENGLAND SEMICONDUCTOR POWER MOSFETS N CHANNEL TO-3 PACKAGE T0204 TO-3 DEVICE TYPE NSF61011A NSF61011 NSF61013 NSF60910 NSF60911 NSF60913 NSF60808 NSF60809 NSF60812 NSF60708 NSF60709 NSF60712 NSF60603 NSF60604 NSF60605 NSF60606 NSF605023 NSF460 NSF360

NSF350

Abstract: 372M NSF60708 NSF60808 NSF60809 NSF60812 NSF60910 NSF60911 NSF60913 NSF61011
Contextual Info: NEW ENGLAND SEMICONDUCTOR POWER MOSFETS N CHANNEL TO-3 PACKAGE T0204 TO-3 DEVICE TYPE NSF61011A NSF61011 NSF61013 NSF60910 NSF60911 NSF60913 NSF60808 NSF60809 NSF60812 NSF60708 NSF60709 NSF60712 NSF60603 NSF60604 NSF60605 NSF60606 NSF605023 NSF460 NSF360

2950

Contextual Info: NEW ENGLAND SEMICONDUCTOR POWER MOSFETS N CHANNEL TO-3 PACKAGE T0204 TO-3 DEVICE TYPE NSF61011A NSF61011 NSF61013 NSF60910 NSF60911 NSF60913 NSF60808 NSF60809 NSF60812 NSF60708 NSF60709 NSF60712 NSF60603 NSF60604 NSF60605 NSF60606 NSF605023 NSF460 NSF360

n -channel power mosfet

Abstract: NESM150 02ur MOSFET Parameters 3421A
Contextual Info: Í? 14E F ^ NESM150 MW*NEW ENGLAND SEMICONDUCTOR POWER MOSFET NCHANNEL POWER MOSFET Switching Power Supplies Repetitive Avalanche Rating Isolated Hermetic Package Ceramic Eyelets High Reliability ABSOLUTE MAXIMUM RATINGS Tc = 25°C unless otherwise noted

NES6764

Abstract: XM46-1158 3421A
Contextual Info: Í? 14E F ^ NES6764 MW*NEW ENGLAND SEMICONDUCTOR POWER MOSFET NCHANNEL POWER MOSFET Switching Power Supplies Repetitive Avalanche Rating Isolated Hermetic Package Ceramic Eyelets High Reliability ABSOLUTE MAXIMUM RATINGS Tc = 25°C unless otherwise noted

MEF 250

Abstract: NSFM150 MOSFET Parameters
Contextual Info: t\MES NSFM150 ^ 1 W *NEW ENGLAND SEMICONDUCTOR POWER MOSFET N CHANNEL POWER MOSFET Switching Power Supplies Repetitive Avalanche Rating Isolated Hermetic Package Ceramic Eyelets High Reliability ABSOLUTE MAXIMUM RATINGS (Tc = 25°C unless otherwise noted

NSF205023

Abstract: NSF20504 NSFM150 NSFM240 NSFM250 NSFM340 NSFM350 NSFM360 NSFM440 NSFM450
Contextual Info: NEW ENGLAND SEMICONDUCTOR POWER MOSFETS N CHANNEL TO-254 PACKAGE DEVICE TYPE TO-254 NSFM150 NSFM240 NSFM250 NSFM340 NSFM350 NSFM360 Also NSFM440 available in NSFM450 Z Pack NSFM460 NSF20504 NSF205023 NSF20607 NSF20606 NSF206036 NSF20714 NSF20712 NSF20812 NSF20814

Contextual Info: NEW ENGLAND SEMICONDUCTOR 1N6036A thru 1N6072A 1500 WATT SILICON BIPOLAR TRANSIENT SUPPRESSOR DIODES The NES 1N6036A to 1N6072A series o f Bipolar Silicon Voltage Transient Suppressor diodes are designed for use in AC circuits where large voltage transients

2N3019A

Abstract: 2N3501A
Contextual Info: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL NPN TRANSISTOR TO-5/TO205AD/TO-39 PACKAGE DEVICE TYPE TO-5 T0205AD 2N697 2N1711 2N1613A 2N1893 2N2218A 2N2218AA 2N2219A 2N2219AA 2N2270 2N3019A 2N3020 2N3053A 2N3114 2N3300 2N3498A 2N3499A 2N3500A 2N3501A 2N3724 2N3725

44CR80S

Abstract: Smart 700 SIEMENS ford siemens 1120 siemens relays Siemens SLE "electronic purse"
Contextual Info: SPECTRUM North Tyneside wafer fab forges ahead: From ships to chips The new £1.1 billion $1.8 billion microchip plant being built by Siemens Microelectronics Ltd at North Tyneside in northeast England reached a new milestone on February 15 with the first integrated run on

Contextual Info: NEW ENGLAND SEMICONDUCTOR POWER MOSFETS N CHANNEL TO-254 PACKAGE TO-254 DEVICE TYPE NSFM150 NSFM240 NSFM250 NSFM340 NSFM350 NSFM360 Also NSFM440 available in NSFM450 Z Pack NSFM460 NSF20504 NSF205023 NSF20607 NSF20606 NSF206036 NSF20714 NSF20712 NSF20812 NSF20814

HA 1370

Abstract: NFD410
Contextual Info: NFD410 ^ M W^NEW ENGLAND SEMICONDUCTOR ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATINGS Tc = 25°C unless otherwise noted SYMBOL PARAMETERS / TEST CONDITIONS Drain-Source Voltage Vos Gate-Source Voltage Vas Continuous Drain Current

Contextual Info: Back to FETs ?\ME5 ^ NES6764 M W*NEW ENGLAND SEMICONDUCTOR POWER MOSFET N CHANNEL POWER MOSFET Switching Power Supplies Repetitive Avalanche Rating Isolated Hermetic Package Ceramic Eyelets High Reliability ABSOLUTE MAXIMUM RATINGS (Tc = 25°C unless otherwise noted

U3700

Contextual Info: Back to FETs ?\ME5 ^ NESM150 M W*NEW ENGLAND SEMICONDUCTOR POWER MOSFET N CHANNEL POWER MOSFET Switching Power Supplies Repetitive Avalanche Rating Isolated Hermetic Package Ceramic Eyelets High Reliability ABSOLUTE MAXIMUM RATINGS (Tc = 25°C unless otherwise noted

Contextual Info: NEW ENGLAND SEMICONDUCTOR 1N6036A thru 1N6072A 1500 WATT SILICON BIPOLAR TRANSIENT SUPPRESSOR DIODES The NES 1N6036A to 1N6072A series o f Bipolar Silicon Voltage Transient Suppressor diodes are designed for use in AC circuits where large voltage transients

TO-18 amps pnp transistor

Abstract: BC107 BC108
Contextual Info: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL PNP TRANSISTOR TO-18 PACKAGE DEVICE TYPE V ceo sus VOLTS (max) AMPS TO-18 T0206AA 2N2906 2N2906AA 2N2907 2N2907AA 2N3250AA 2N3251AA 2N3496 2N3497 2N3798 2N3799 2N3962 2N3963 2N3964 2N3965 2N4026 2N4027 2N4028 2N4029

Contextual Info: NEW ENGLAND SEMICONDUCTOR 15KW17A thru 15KW280A 15,000 WATT TRANSIENT VOLTAGE SUPPRESSOR AVAILABLE IN VOLTAGES FROM 19.9V THRU 327.5V TheNESlSKW series of transient suppressor diodes are designed to protect electronic equipment from failure due to high voltage transients. Because of