BFR92 application note
Abstract: BFR92 TRANSISTOR p1p datasheet BFT92 transistor P1P 39 TRANSISTOR p1p BFR90 amplifier BFR92 transistor transistor BFR92 BFR90
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFR92 NPN 5 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 5 GHz wideband transistor DESCRIPTION BFR92 PINNING NPN transistor in a plastic SOT23
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BFR92
MSB003
BFT92.
BFR92 application note
BFR92
TRANSISTOR p1p datasheet
BFT92
transistor P1P 39
TRANSISTOR p1p
BFR90 amplifier
BFR92 transistor
transistor BFR92
BFR90
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BFG35
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG35 NPN 4 GHz wideband transistor Product specification Supersedes data of 1995 Sep 12 1999 Aug 24 Philips Semiconductors Product specification NPN 4 GHz wideband transistor DESCRIPTION BFG35 PINNING NPN planar epitaxial transistor
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BFG35
OT223
MSB002
OT223.
125006/03/pp16
BFG35
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BFR94
Abstract: NF751 BFR94A Ferroxcube cross reference
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFR94A NPN 3.5 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 3.5 GHz wideband transistor DESCRIPTION BFR94A PINNING
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BFR94A
OT122E
MBB904
BFR94
NF751
BFR94A
Ferroxcube cross reference
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2A marking
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PBSS2515F NPN transistor Product specification 2000 Oct 25 Philips Semiconductors Product specification NPN transistor PBSS2515F PINNING FEATURES • Low VCEsat PIN • High current capabilities. APPLICATIONS DESCRIPTION
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M3D425
PBSS2515F
SC-89
OT490)
PBSS3515F.
MAM410
PBSS2515F
613514/01/pp8
2A marking
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PBSS4350D
Abstract: PBSS5350D MCD920
Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D302 PBSS4350D NPN transistor Product specification 2000 Mar 08 Philips Semiconductors Product specification NPN transistor PBSS4350D PINNING FEATURES • High current capabilities PIN • Low VCEsat.
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M3D302
PBSS4350D
603506/01/pp8
PBSS4350D
PBSS5350D
MCD920
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PDTA123ET
Abstract: PDTC123ET marking code 10 sot23
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PDTC123ET NPN resistor-equipped transistor Product specification Supersedes data of 1998 May 08 1999 May 21 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC123ET FEATURES
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M3D088
PDTC123ET
MAM097
115002/00/03/pp8
PDTA123ET
PDTC123ET
marking code 10 sot23
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PDTC144EEF
Abstract: SC-89
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTC144EEF NPN resistor-equipped transistor Preliminary specification 1999 May 27 Philips Semiconductors Preliminary specification NPN resistor-equipped transistor PDTC144EEF FEATURES • Built-in bias resistors R1 and R2
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M3D425
PDTC144EEF
MAM412
SC-89;
OT490)
115002/01/pp8
PDTC144EEF
SC-89
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PDTC144WT
Abstract: BP317
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PDTC144WT NPN resistor-equipped transistor Product specification Supersedes data of 1998 May 19 1999 May 25 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC144WT FEATURES
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M3D088
PDTC144WT
115002/00/03/pp8
PDTC144WT
BP317
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PDTA144
Abstract: PDTA144WU PDTC144WU
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 PDTC144WU NPN resistor-equipped transistor Product specification Supersedes data of 1998 May 19 1999 May 25 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC144WU FEATURES
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M3D102
PDTC144WU
115002/00/03/pp8
PDTA144
PDTA144WU
PDTC144WU
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MDA930
Abstract: PDTC123JEF SC-89
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTC123JEF NPN resistor-equipped transistor Preliminary specification 1999 May 27 Philips Semiconductors Preliminary specification NPN resistor-equipped transistor PDTC123JEF FEATURES • Built-in bias resistors R1 and R2
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M3D425
PDTC123JEF
MAM412
SC-89;
OT490)
115002/01/pp8
MDA930
PDTC123JEF
SC-89
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GES5819
Abstract: GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20 MPSA55
Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE Device bv ceo Type @ 10mA- V Min. VCE(sat) 1F E Max. @ lc (mA) GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 PNP NPN PNP NPN NPN NPN NPN NPN 40 60 60 60 80 20 30 30
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GES5819
GES5820
GES5821
MPSA05
MPSA06
MPSA12
MPSA13
MPSA14
MPSA20S6535
100mA)
MPSA20
MPSA55
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MPS6531
Abstract: GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20
Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE Type @ 10mA- V Min. Max. @ lc (mA) GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 PNP NPN PNP NPN NPN NPN NPN NPN 40 60 60 60 80 20 30 30 150 60 60 50 50 20,000 10,000
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GES5819
GES5820
GES5821
MPSA05
MPSA06
MPSA12
MPSA13
MPSA14
MPSA206531,
MPS6532
MPS6531
MPSA20
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mps65
Abstract: GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20
Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE Type @ 10mA- V Min. Max. @ lc (mA) GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 PNP NPN PNP NPN NPN NPN NPN NPN 40 60 60 60 80 20 30 30 150 60 60 50 50 20,000 10,000
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GES5819
GES5820
GES5821
MPSA05
MPSA06
MPSA12
MPSA13
MPSA14
MPSA20MPS6516
MPS6517
mps65
MPSA20
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MPS6566
Abstract: GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20
Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE Type @ 10mA- V Min. Max. @ lc (mA) GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 PNP NPN PNP NPN NPN NPN NPN NPN 40 60 60 60 80 20 30 30 150 60 60 50 50 20,000 10,000
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GES5819
GES5820
GES5821
MPSA05
MPSA06
MPSA12
MPSA13
MPSA14
MPSA2034
MPS6532
MPS6566
MPSA20
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D38L1-3
Abstract: GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20
Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE b v ceo Device Type @ 10mA- V Min. Max. @ lc (mA) GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 PNP NPN PNP NPN NPN NPN NPN NPN 40 60 60 60 80 20 30 30 150 60 60 50
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GES5819
GES5820
GES5821
MPSA05
MPSA06
MPSA12
MPSA13
MPSA14
MPSA20
D38L1-3
MPSA20
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MPS6566
Abstract: GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20
Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE Device bv ceo Type @ 10mA- V Min. Max. @ lc (mA) GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 PNP NPN PNP NPN NPN NPN NPN NPN 40 60 60 60 80 20 30 30 150 60 60 50 50
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GES5819
GES5820
GES5821
MPSA05
MPSA06
MPSA12
MPSA13
MPSA14
MPSA20VES
MPS6566
MPSA20
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2N4123 pnp silicon
Abstract: 2N4401 520 GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14
Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE b v ceo Device Type @ 10mA- V Min. Max. @ lc (mA) GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 PNP NPN PNP NPN NPN NPN NPN NPN 40 60 60 60 80 20 30 30 150 60 60 50
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GES5819
GES5820
GES5821
MPSA05
MPSA06
MPSA12
MPSA13
MPSA14
MPSA20
2N4123 pnp silicon
2N4401 520
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mpsa65
Abstract: GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20
Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 P AC KAG E VCE sat 1F E b v ceo Device Type @ 10mA-(V) Min. Max. @ lc (mA) GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 PNP NPN PNP NPN NPN NPN NPN NPN 40 60 60 60 80 20 30
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GES5819
GES5820
GES5821
MPSA05
MPSA06
MPSA12
MPSA13
MPSA14
MPSA20
mpsa65
MPSA20
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sC3228
Abstract: BC286 bc 7-25 pnp MPS9681T BC527-25 BC5508 BC537 BC5568 2N5222 8C416
Text: CRIMSON SEMICONDUCTOR INC TT 25 14 09 6 C R I M S O N S E M I C O N D U C T O R 99D 00293 DEVICF 2N1507 2N1566 2N I613 2 N I7 U 2N1889 2N1890 TYPE NPN NPN NPN NPN NPN PACKAGE DE | S S I M Q T L INC D T Ô / - COB HFE @ VC & iC By.CEO BVCBO BVEBO ICBO @ VCB
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15514CHb
2N1507
2N1566
2NI613
2N1889
2N1890
2N1893
2N1973
2N1974
O-237
sC3228
BC286
bc 7-25 pnp
MPS9681T
BC527-25
BC5508
BC537
BC5568
2N5222
8C416
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BF180
Abstract: s21b BF180 TRANSISTOR s parametres s22b bf 180 CE 470 10V J BF180 MAX S21B est 504
Text: * B F 180 NPN SILICON TRANSISTOR, PLANAR TRANSISTOR NPN S ILIC IU M , PLAN A R % Preferred device D is p o s itif recom m andé The NPN planar transistor BF 180 is intended for use in UHF amplifier stages of T V receivers AGC controlled stages . Le transistor planar NPN BF 180 est destiné à être u ti
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BF180
BF180
s21b
BF180 TRANSISTOR
s parametres
s22b
bf 180
CE 470 10V
J BF180
MAX S21B
est 504
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Untitled
Abstract: No abstract text available
Text: Ordering number : EN 5053 No.5053 FX8Ö3 TR : NPN Epitaxial Planar Silicon Transistor SBD : Schottky B arrier Diode Twin Type *Cathode Common DC-DC Converter F eatu res • Complex type of a low saturation voltage, high speed switching and large current NPN transistor and
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FX803
2SB1628
SB20W03P,
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2n4125 equivalent
Abstract: 2N5089 equivalent 2n4123 equivalent 2N3905 Equivalent 2N3903 2N3904 n4401 2N3906 2N4123 2N4125
Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE V C E sa t E b v CEO Device Type @ 1 0 m A -(V) Min. Max. @ l c (mA) 2N 3903 2N3904 2N3905 2N3906 2N4123 NPN NPN PNP PNP NPN 40 40 40 40 30 50 100 50 100 50 150 300 150 300 150
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2N3903
2N3904
2N3905
2N3906
2N4123
2N4124
2N4125
2N4126
2N4400
2n4125 equivalent
2N5089 equivalent
2n4123 equivalent
2N3905 Equivalent
n4401
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2N3906 JEDEC
Abstract: 2N3906 hie 2N3906 2N3905 Equivalent 2n3906 equivalent 2n3906 npn 2N3903 2N3904 2N3905 2N4123
Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE V C E sa t E b v CEO Device Type @ 1 0 m A -(V) Min. Max. @ l c (mA) 2N 3903 2N3904 2N3905 2N3906 2N4123 NPN NPN PNP PNP NPN 40 40 40 40 30 50 100 50 100 50 150 300 150 300 150
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2N3903
2N3904
2N3905
2N3906
2N4123
2N4124
2N4125
2N4126
2N4400
2N3906 JEDEC
2N3906 hie
2N3905 Equivalent
2n3906 equivalent
2n3906 npn
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2n3904 418
Abstract: 2N3905 Equivalent 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126
Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE V C E sa t E b v CEO Device Type @ 1 0 m A -(V) Min. Max. @ l c (mA) 2N 3903 2N3904 2N3905 2N3906 2N4123 NPN NPN PNP PNP NPN 40 40 40 40 30 50 100 50 100 50 150 300 150 300 150
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2N3903
2N3904
2N3905
2N3906
2N4123
2N4124
2N4125
2N4126
2N4400
2n3904 418
2N3905 Equivalent
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