transistor BF245
Abstract: BC237 transistor motorola 2n3053 MMBF5486 TRANSISTOR REPLACEMENT FOR 2N3053 855 sot363
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PZTA14T1 NPN SmallĆSignal Darlington Transistor Motorola Preferred Device This NPN small signal darlington transistor is designed for use in switching applications, such as print hammer, relay, solenoid and lamp drivers. The
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OT-223
PZTA14T1
inch/1000
U218A
MSC1621T1
MSC2404
MSD1819A
MV1620
transistor BF245
BC237
transistor motorola 2n3053
MMBF5486
TRANSISTOR REPLACEMENT FOR 2N3053
855 sot363
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transistor code AS3
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Small-Signal Darlington Transistor BSP52T1 Motorola Preferred Device This NPN small signal darlington transistor is designed for use in switching applications, such as print hammer, relay, solenoid and lamp drivers. The device is
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OT-223
BSP52T1
inch/1000
BSP52T3
inch/4000
BSP62T1
BSP52T1
transistor code AS3
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BC237
Abstract: 2n6426 equivalent
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Darlington Transistors 2N6426* 2N6427 NPN Silicon *Motorola Preferred Device COLLECTOR 3 BASE 2 EMITTER 1 1 2 MAXIMUM RATINGS Symbol Value Unit Collector – Emitter Voltage Rating VCEO 40 Vdc Collector – Base Voltage
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2N6426*
2N6427
226AA)
Juncti218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
BC237
2n6426 equivalent
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MPSA29 equivalent
Abstract: MPS-A29 BC237
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Darlington Transistors MPSA28 MPSA29* NPN Silicon COLLECTOR 3 *Motorola Preferred Device BASE 2 EMITTER 1 MAXIMUM RATINGS Rating Symbol MPSA28 MPSA29 Unit Collector – Emitter Voltage VCES 80 100 Vdc Collector – Base Voltage
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MPSA28
MPSA29*
MPSA29
226AA)
Resista218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MPSA29 equivalent
MPS-A29
BC237
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SOD123
Abstract: marking pa sot-363
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Darlington Transistor MMBT6427LT1 NPN Silicon COLLECTOR 3 Motorola Preferred Device BASE 1 3 EMITTER 2 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector – Emitter Voltage VCEO 40 Vdc Collector – Base Voltage VCBO
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MMBT6427LT1
236AB)
SOD123
marking pa sot-363
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2N3819 MOTOROLA
Abstract: bc394 motorola MPSa14 equivalent MPSa13 equivalent BC237 BF374 MOTOROLA 2N2222A motorola 2n3819 replacement
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Darlington Transistors MPSA13 MPSA14 * NPN Silicon COLLECTOR 3 *Motorola Preferred Device BASE 2 EMITTER 1 1 2 3 CASE 29–04, STYLE 1 TO–92 TO–226AA MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage
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MPSA13
MPSA14
226AA)
to218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
2N3819 MOTOROLA
bc394 motorola
MPSa14 equivalent
MPSa13 equivalent
BC237
BF374 MOTOROLA
2N2222A motorola
2n3819 replacement
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transistor D 2395
Abstract: Motorola 2396
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBTA13LT1 MMBTA14LT1* Darlington Amplifier Transistors NPN Silicon *Motorola Preferred Device COLLECTOR 3 BASE 1 3 1 EMITTER 2 2 CASE 318 – 08, STYLE 6 SOT– 23 TO – 236AB MAXIMUM RATINGS Rating Symbol Value Unit
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MMBTA13LT1
MMBTA14LT1*
236AB)
transistor D 2395
Motorola 2396
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MPSW45A replacement
Abstract: MPSW45 equivalent BF245 application note BC237 alternative bipolar transistors book Characteristic curve BC107
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA One Watt Darlington Transistors NPN Silicon MPSW45 MPSW45A* COLLECTOR 3 BASE 2 *Motorola Preferred Device EMITTER 1 1 MAXIMUM RATINGS 2 Rating Symbol MPSW45 MPSW45A Unit Collector – Emitter Voltage VCES 40 50 Vdc Collector – Base Voltage
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MPSW45
MPSW45A*
MPSW45A
226AE)
Ambien218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MPSW45A replacement
MPSW45 equivalent
BF245 application note
BC237
alternative bipolar transistors book
Characteristic curve BC107
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2608 surface mount transistor
Abstract: BC237 high hfe darlington transistor sc70
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA One Watt Darlington Transistors NPN Silicon MPS6724 MPS6725 COLLECTOR 3 BASE 2 EMITTER 1 MAXIMUM RATINGS Rating Symbol MPS6724 MPS6725 Unit Collector – Emitter Voltage VCES 40 50 Vdc Collector – Base Voltage VCBO 50
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MPS6724
MPS6725
MPS6725
226AE)
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
2608 surface mount transistor
BC237
high hfe darlington transistor sc70
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BC237
Abstract: 2507 14PIN transistor BF245 A
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad Darlington Transistor MPQ6426 NPN Silicon 14 13 12 11 10 9 8 5 6 7 NPN 1 2 3 4 MAXIMUM RATINGS 14 Rating Symbol Value Unit Collector – Emitter Voltage VCEO 30 Vdc Collector – Base Voltage VCBO 40 Vdc Emitter – Base Voltage
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MPQ6426
Effective218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
BC237
2507 14PIN
transistor BF245 A
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BC237
Abstract: transistor TO-92 bc108
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA One Watt Darlington Transistors MPSW13 MPSW14 NPN Silicon COLLECTOR 3 BASE 2 EMITTER 1 1 2 3 CASE 29–05, STYLE 1 TO–92 TO–226AE MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCES 30 Vdc
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MPSW13
MPSW14
226AE)
Rq218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
BC237
transistor TO-92 bc108
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BC517 equivalent
Abstract: BC517 model file BC517 MOTOROLA
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Darlington Transistors NPN Silicon BC517 COLLECTOR 1 BASE 2 EMITTER 3 MAXIMUM RATINGS 1 Rating Symbol Value Unit VCES 30 Vdc Collector – Base Voltage VCB 40 Vdc Emitter – Base Voltage VEB 10 Vdc Collector – Emitter Voltage
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BC517
226AA)
BC517 equivalent
BC517 model file
BC517 MOTOROLA
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BC618 equivalent to
Abstract: BC618 EQUIVALENT
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Darlington Transistors BC618 NPN Silicon COLLECTOR 1 BASE 2 EMITTER 3 1 2 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 55 Vdc Collector – Base Voltage VCBO 80 Vdc Emitter – Base Voltage
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BC618
226AA)
BC618 equivalent to
BC618 EQUIVALENT
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bc373 equivalent
Abstract: BC372 equivalent BC237 JC 201 SC
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Darlington Transistors BC372 BC373 NPN Silicon COLLECTOR 3 BASE 2 1 2 EMITTER 1 3 CASE 29–04, STYLE 1 TO–92 TO–226AA MAXIMUM RATINGS Rating Symbol BC372 BC373 Unit Collector – Emitter Voltage VCES
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BC372
BC373
226AA)
BC373
Case218A
MSC1621T1
MSC2404
MSD1819A
MV1620
bc373 equivalent
BC372 equivalent
BC237
JC 201 SC
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2SC982
Abstract: TO226AA 92PU45 MPSU45 MPS-U45 2S0114 2S01140 2SC3132 b0477
Text: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer V BR CEO Ie Max PD Max (V) (A) (W) hFE Min Max fT leBO Max tr Max tf Max TOper Max (Hz) (A) (8) (8) ee) 125M 75M 75M 75M 75M 75M 200M 200M 100M 125M 100n 500n 20u 500n 500n 500n 100n 100n 100n 100n
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MPSA14
040C1
040C2
040C3
BC517
BC517S
NS0151
MPSW13
2SC982
TO226AA
92PU45
MPSU45
MPS-U45
2S0114
2S01140
2SC3132
b0477
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70413080
Abstract: 70473180 SAC-187 Motorola 70483180 70483100 70484200 70487478 70484140 SJ-6357 70483180
Text: SEMI-CONDUCTOR/TRANSISTOR CROSS-REFERENCE LIST Peavey Electronics Corporation ORIGINAL IN-HOUSE NUMBER ALTERNATE IN-HOUSE NUMBER FIELD REPLACEMENT NUMBER ORDER NUMBER NOTES TO-92 TRANSISTORS 2N3391 A SPS-953(A, B) MPS-8097, 2N6520 MPS-A18, 2N6539, SK-3919
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2N3391
SPS-953
MPS-8097,
2N6520
MPS-A18,
2N6539,
SK-3919
2N4249
SPS-690,
PN-2907A
70413080
70473180
SAC-187
Motorola 70483180
70483100
70484200
70487478
70484140
SJ-6357
70483180
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box53a
Abstract: bot63 218m motorola mj1200 BOW93A 2S0558 2S0405 BOT65 B089 TO221AB
Text: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer V BR CEO (V) Ic Max (A) PD Max (W) fT hFE Min Max (Hz) ICBO Max (A) t, Max tf Max (8) (8) Toper Max (Oe) Package Style NPN Darlington Transistors, (Cont'd) 5 10 15 20 25 30 35 40 45 50 B0897A BOX53A
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B0897A
BOX53A
2S01572
2S01176
2S01219
2S01262
2S01277
2S01321
2S01327
B0267
bot63
218m
motorola mj1200
BOW93A
2S0558
2S0405
BOT65
B089
TO221AB
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bvc49
Abstract: TIPP110 FMMT388 U2TA506 BSR51 SE1001 2N2724 2S0152 transistor* SE1001
Text: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer V BR CEO Ic Max PD Max (V) (A) (W) hFE Min Max fT ICBO Max (Hz) (A) 120M 0.1u 100n 100m 100n 10u tr Max (8) tf Max Toper Max (8) (Oe) 400n 150 150 150 150 150 Package Style NPN Darlington Transistors, (Cont'd)
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2S01111
2S01198A
2S0946A
MPS6725
2SC3985
2S01661M
2S01521
92PU45A
2N6725
bvc49
TIPP110
FMMT388
U2TA506
BSR51
SE1001
2N2724
2S0152
transistor* SE1001
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npn darlington motorola to92
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Darlington Transistor NPN Silicon COLLECTOR 3 EMITTER 1 CASE 29-04, STYLE 1 TO-92 TO—226AA MAXIM UM RATINGS Rating Collector-Emitter Voltage Emitter-Base Voltage Symbol MPSA27 Unit VCES 60 Vdc Vdc vebo 10 Collector Current — Continuous
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226AA)
MPSA27
npn darlington motorola to92
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA One Watt Darlington Transistors NPN Silicon MPS6724 MPS6725 COLLECTOR 3 EMITTER 1 M A X IM U M R A T IN G S Symbol MPS6724 MPS6725 Unit Collector- Emitter Voltage VCES 40 50 Vdc Collector-Base Voltage VCBO 50 60 Vdc Emitter-Base Voltage
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OCR Scan
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MPS6724
MPS6725
MPS6725
O-226AE)
00T337Ö
MPS6724MPS6725
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cmpsa13
Abstract: No abstract text available
Text: MPSA13 MPSA14* MAXIMUM RATINGS Symbol Value Unit C ollector-E m itter Voltage VCES 30 Vdc CASE 29-04, STYLE 1 TO-92 TO-226AA Collector-Base Voltage VcBO 30 Vdc C o lle c to r Em itter-Base Voltage v EBO 10 Vdc Rating C ollector C urrent — C ontinuous 'c
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OCR Scan
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MPSA13
MPSA14*
O-226AA)
MPSA14
cmpsa13
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Untitled
Abstract: No abstract text available
Text: MPSA28 MPSA29* M AXIMUM RATINGS Symbol Rating C o llector-E m itter Voltage MPSA28 MPSA29 80 Collector-Base Voltage VCBO 80 Em itter-Base Voltage v EBO 12 Vdc C ollector C urrent — C ontinuous >C 500 m Adc Total Device D issipation <5 T a = 25°C Derate above 25°C
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MPSA28
MPSA29*
MPSA29
O-226AA)
MPSA20,
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mpsw
Abstract: No abstract text available
Text: MPSW13 MPSW14 M AXIM UM RATINGS Symbol Value Unit Collector-Emitter Voltage VC E S 30 Vdc Collector-Base Voltage VCBO 30 Vdc Emitter-Base Voltage Vebo 10 Vdc Rating 'c 1.0 Ade Total Device Dissipation Ca T a = 25°C Derate above 25°C PD 1.0 8.0 Watt mwrc
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MPSW13
MPSW14
O-226AE)
mpsw
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MPSA25
Abstract: BC517 CBE 2N6426 2N6427 BC372 BC373 BC617 BC618 MPSA12 MPSA13
Text: SMALL-SIGNAL TRANSISTORS — PLASTIC continued Darlington Transistors (TO-92) Darlington amplifiers are cascade transistors used in applications requiring very high gain and input impedance. These devices have monolithic construction. Absolute M ax. Rating at 2 5 °C
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BC372
BC373
BC617
BC618
MPSA25
MPSA76
MPSA26
MPSA77
MPSA27
MSD6100
MPSA25
BC517 CBE
2N6426
2N6427
MPSA12
MPSA13
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