P CHANNEL J FET Search Results

Contextual Info: T em ic Semiconductors S08 DMOS FETs T0220 T052 TO237 T092 2 lead T092 (3 lead) Low-Power MOS N-Channel Enhancement-Mode (continued) DMOS FETs - Low-Power MOS P-Channel Enhancement-Mode j mm>xm Ì Q K ? Ì |g ir ( M ) 14-Pin Sidebraze (P) and Plastic (J)

IRHN7450SE

Contextual Info: | p j j -0 p p q j-j q p q | Provisional Data Sheet No. PD-9.1313A I R Rectifier IRHN7450SE REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD 500 Volt, 0.51 Q, (SEE) RAD HARD HEXFET International Rectifier’s (SEE) RAD HARD technology

Teledyne Semiconductor

Contextual Info: TELEDYNE 5SE COMPONENTS QQ0b372 7 • D - T - 4 3 -J S AP0120N, AP0130N, AP0140N SEMICONDUCTOR P-CHANNEL ENHANCEMENT MODE D-MOS FETs 8-CHANNEL ARRAYS ORDERING INFORMATION 18 Pin FHastfc DIP Description each channel APQ120NA AP0130NA AP0140NA

Contextual Info: bb53T31 DQ240CH 70S « A P X N AMER PHILIPS/DISCRETE J174 TO 177 b?E D J V P-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Silicon symmetrical p-channel junction FETs in a plastic TO-92 envelope and intended fo r application with analog switches, choppers, commutators etc.

Contextual Info: I bb53^31 0024111 53fl « A P X Philips Semiconductors Data sheet status P r e lim in a r y s p e c ific a tio n 2N5116 NAf1ER philips/1>iscre:te: P-channel J-FET date of issue July 1993 FEATURES • P-channel complement of 2N4393 • Short sample and hold aperture

2SK1814

Abstract: ss 211 P channel MOSFET 10A schematic
Contextual Info: 2SK1814 S IP M O S F U J I P O W E R M O S -F E T N-CHANNEL SILICON POWER MOS-FET p • Features j j SER IES j O utline D raw ings • High current • Low no-resistance • No secondary breakdow n • Low driving p o w er • High fo rw ard T ran scon d u ctan ce

MPC4084

Abstract: FI206 iPC4084 MPC40
Contextual Info: J-FET INPUT QUAD OPERATIONAL AMPLIFIER DESCRIPTION FEATURES The ¿/PC4084, is a quad operational a m plifier • Very lo w in p u t bias and o ffse t currents incorporating w ell matched ion im p la n t P-channel • H igh in p u t im pedance. J-F E T In p u t Stage

MARKING P1a

Abstract: VP2110N3
Contextual Info: = J U r — J J j S VP2106 VP2110 . P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information b v dss/ R d S ON Order Number / Package I d (ON) BVdgs (max) (min) TO-92 DICE+ TO-236AB* -60V 12Q -0.5A VP2106N3 VP2106ND - -100V 12Q -0.5A VP2110N3 VP2110ND

2N3820

Contextual Info: Philips Components D ata sheet status Preliminary specification date of issue October 1990 DESCRIPTION Silicon p-channel junction field-e ffect transistor in a plastic TO-92 envelope. It is intended fo r use in general purpose am plifiers. 2N3820 P-channel J-FET

"P-Channel JFET"

Abstract: 2N3820 P-Channel JFET 2n3820 transistor Junction P FET E 212 fet 2N3820 ti
Contextual Info: Philips Components 2N3820 Data sheet status Preliminary specification date of issue October 1990 P-channel J-FET PINNING • TO-92 DESCRIPTION Silicon p-channel junction field-effect transistor in a plastic TO-92 envelope. It ¡s intended for use in general purpose amplifiers.

MPS 0715

Abstract: 2N5358 10MF 2N2222 MPQ2001 FET small signal transistors motorola 2N2222 npn small signal current gain 2N2222 transistor 2n2222 mps 2N2222 motorola
Contextual Info: Order this document by MPQ2001/D MOTOROLA MPQ2001 Semiconductors BOX 2 0912 • P H O E N IX , A R IZ O N A 85036 Advance Inform ation 2 - NPN SILICON BIPOLAR 2 -N-CHANNEL J-FET QUAD TRANSISTORS SILICON ANNULAR* NPN BIPOLAR, N-CHANNEL J-FET QUAD TRANSISTOR

cds28

Abstract: 2SJ326 2SJ326-Z MEI-1202 TEA-1035 08CC0
Contextual Info: NEC J i_ r DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS 2SJ326, 2SJ326-Z SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SJ326 is P-channel MOS Field Effect Transistor de­ in millimeters signed for solenoid, motor and lamp driver.

P-Channel JFET

Abstract: philips 2N4393 2N5116 2N4393 DDS4111 philips jfet
Contextual Info: I 1^53^31 DDS4111 S3Ö « A P X Philips Semiconductors Data sheet status Preliminary specification date of issue July 1993 FEATURES • P-channel com plem ent of 2N4393 • S hort sam ple and hold aperture tim e. 2N5116 NAI1ER philips/]>iscre:te: P-channel J-FET

SIPMOS

Abstract: 2SK1509
Contextual Info: 2SK1509 S IP M O S F U J I P O W E R M O S -F E T N-CHANNEL SILICON POWER MOS-FET p • Features S E R IE S j j j Outline Drawings • High cu rren t • Low n o-resistance • N o secondary b reakd ow n • Low driving p ow er • High fo rw a rd T ran scon d u ctan ce

2SJ331

Abstract: T120 Switch MEI-1202 TEA-1035 2SJ33
Contextual Info: DATA SHEET NEC - f t P-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR _ f 2SJ331 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION T h e 2S J 33 1 is P -ch an n el M O S Field E ffect T ra n s is to r d e ­ PACKAGE DIMENSIONS

Contextual Info: DATA SHEET NEC MOS FIELD EFFECT TRANSISTOR ELECTRON DEVICE 2 S J 1 8 5 P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING O U T L IN E D IM E N S IO N S Unit : mm T he 2 S J 1 8 5 is a P-channel vertical type M O S F E T w hich can be driven b y 2.5 V pow er supply.

VP2210ND

Abstract: VP2210N2
Contextual Info: VP2206 = j 1 1L j= L r «HHHMr | r' : L J - ' 7r C, vp22io ft P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information ^DS(ON BVdgs (max) -60V 0.9Q -100V 0.9Q Order Number / Package If b v dss/ TO-39 TO-92 DICEt -4A VP2206N2 VP2206N3 VP2206ND

Contextual Info: NEC NEC Electronics Inc. Description /¿PC4081 J-FET INPUT OPERATIONAL AMPLIFIER Pin Configuration TheAiPC4081 is a single operational amplifier with a com­ bination of matched ion implanted P-channel J-FET inputs with standard bipolar transistor technology. The

PMBFJ174

Contextual Info: bb Sim i 002405b 524 H A P X N APIER P H IL IP S/ D IS CR ET E b?E I> PMBFJ174 to 177 _ J V _ P-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Silicon symmetrical p-channel junction FETs in plastic microminiature SOT-23 envelopes. They are intended for application with analogue switches, choppers, commutators etc. using SMD

Contextual Info: NEC NEC Electronics Inc. D e scrip tio n /¿PC356 J-FET INPUT OPERATIONAL AMPLIFIER Pin C o n figu ratio n The juPC356 is a J -F E T input operational amplifier with matched P-channel ion implanted J -F E T s. In addition to the obvious advantages of J -F E T inputs, the //PC356 is

3SK154

Abstract: 3sk96
Contextual Info: HITACHI 3SK154 SILICON N-CHANNEL DUAL GATE MOS FET VHFAMÄ'iFIER" VHP TV TUNER RF AMPLIFIER « J il _ .!.» - . I. Se«.i«vc 2 < U te l y U w } 4 Tit.m <r O i O iiiïr is v ÿ .in V I - j - i ~ .~ - I ~.P'. — i (MPAK-4 MAXIMUM CHANNEL POWER

2SJ73

Abstract: 2SK389 2SK240 2SJ109 2SJ75 2SK146 3SK77 2SK146 Toshiba toshiba 2sj73 2SK266
Contextual Info: Powered 4. HSTM PACKAGE SERIES -3 O n by >M 0S FET < JZ ICminer.com >DSS Type No. Application lYfslTYP. . '1. ' ' . . N-Channel! P-Channel V ds •d PD V (mA) (mW) V H F A m p , FM RF M IX 3SK73 j 20 30 V H F R F A m p , VH F TV 3SK77

VP0345

Abstract: vp0345n5
Contextual Info: ^ VP0345 VP0350 J T -J j _ P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information b v dss/ R d S ON Order Number / Package I d (ON) BV dgs (max) (min) TO-3 TO-39 TO-220 DICE+ -450V 7.5Q -1 A VP0345N1 VP0345N2 VP0345N5 VP0345ND -500V 7.5Q -1 A

VP12C

Abstract: VP1216N1 VP1216N2 VP1216N5 VP1216ND VP1220N1 VP1220N2 VP1220N5
Contextual Info: ~01 SUPERTEX INC D eTI 07735^5 □□□1743 fi ¥ ~ i_ \ j i r 1 \j u* V P 12 C S ^ u p e r t e x i n c . ~ r-3 9 - / 9 P-Channel Enhancement-Mode Vertical DMOS Power FETs Ordering Information b v dss / BVpQs Order Number / Package *D ON (max) (min) TO-3