resistor 220 ohm
Abstract: capacitor siemens 4700 35 resistor 4700 ohm 200B G200 2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM P220ECT-ND th 2167 20237 P220E
Text: PTF 10065 30 Watts, 1.93–1.99 GHz GOLDMOS Field Effect Transistor Description The PTF 10065 is a 30–watt GOLDMOS FET intended for PCS amplifier applications from 1.93 to 1.99 GHz. It typically operates with 11 dB gain. Nitride surface passivation and full gold metallization
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P220ECT-ND
1-877-GOLDMOS
1522-PTF
resistor 220 ohm
capacitor siemens 4700 35
resistor 4700 ohm
200B
G200
2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM
P220ECT-ND
th 2167
20237
P220E
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smd transistor marking l6
Abstract: TRANSISTOR SMD 2X K PCC103BCT marking us capacitor pf l1 smd marking f2 PTF180601 PTF180601C PTF180601E 32 z 45 SMD TRANSISTOR MARKING l4
Text: PTF180601 LDMOS Field Effect Transistor 60 W, DCS/PCS Band 1805–1880 MHz, 1930–1990 MHz Description Features The PTF180601 is a 60 W, internally matched GOLDMOS FET intended for EDGE applications in the DCS/PCS Band. Full gold metallization ensures excellent device lifetime and reliability.
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PTF180601
PTF180601
smd transistor marking l6
TRANSISTOR SMD 2X K
PCC103BCT
marking us capacitor pf l1
smd marking f2
PTF180601C
PTF180601E
32 z 45
SMD TRANSISTOR MARKING l4
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Transistor 4733
Abstract: capacitor siemens 4700 35 BDS31314-6-452 CGS C14
Text: PRE-RELEASE PTF 10134* 100 Watts, 2.1–2.2 GHz GOLDMOS Field Effect Transistor Description The PTF 10134 is an internally matched common source N–channel enhancement–mode lateral MOSFET intended for WCDMA applications from 2.1 to 2.2 GHz. It is rated at 100 watts power output. Nitride surface passivation and gold metallization ensure excellent device lifetime
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P4525-ND
PC56106-ND
P220ECT-ND
LL2012-F2N7S
BDS31314-6-452
35VDC
1-877-GOLDMOS
1301-PTF
Transistor 4733
capacitor siemens 4700 35
BDS31314-6-452
CGS C14
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Untitled
Abstract: No abstract text available
Text: PTF 102098 LDMOS RF Power Field Effect Transistor 90 Watts, 1805–1880 MHz, 1930–1990 MHz Description The PTF 102098 is a 90–watt, internally matched GOLDMOS FET intended for EDGE applications in the DCS or PCS bands. This LDMOS device operates at 47% efficiency P–1dB and 14.5 dB linear gain. Full
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1522-PTF
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smd TRANSISTOR 1702
Abstract: No abstract text available
Text: Preliminary PTF180901A High Power RF LDMOS Field Effect Transistor 90 W, 1805 – 1880 MHz, 1930 – 1990 MHz Description The PTF180901A is a 90-watt, internally-matched GOLDMOS FET intended for EDGE applications in the DCS/PCS bands. Full gold metallization ensures excellent device lifetime and reliability.
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PTF180901A
PTF180901A
90-watt,
PTF180901A*
smd TRANSISTOR 1702
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22W8
Abstract: No abstract text available
Text: PTF180601C LDMOS Field Effect Transistor 60 W, DCS/PCS Band 1805–1880 MHz, 1930–1990 MHz Description Features The PTF180601C is a 60–W, internally matched GOLDMOS FET intended for EDGE applications in the DCS/PCS Band. Full gold metallization ensures excellent device lifetime and reliability.
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PTF180601C
PTF180601C
22W8
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resistor 680 ohm
Abstract: BS121-ND PCB301 J101-J104 PVC Pipe capacitor 476 10V PCS5106CT-ND 680 ohms resistor 5 watt datasheet 476 capacitor 2.2 k ohm resistor
Text: Fiber Optic Probe Details Terry Fritz 8-17-1999 Rev. 4 VI Probe Theory The VI Probe consists of three main parts. There is a transducer that turns either high voltages or high currents into smaller signals. A transmitter that takes the small signal from the transducer and converts it into an analog light
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R301-R310
500mV
R311-R320
R351-R354
R355-R358
resistor 680 ohm
BS121-ND
PCB301
J101-J104
PVC Pipe
capacitor 476 10V
PCS5106CT-ND
680 ohms resistor 5 watt datasheet
476 capacitor
2.2 k ohm resistor
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10134
Abstract: capacitor siemens 4700 35 BDS31314-6-452 transistor t 2180
Text: PTF 10134 100 Watts, 2.1–2.2 GHz GOLDMOS Field Effect Transistor Description The PTF 10134 is an internally matched GOLDMOS FET intended for WCDMA applications from 2.1 to 2.2 GHz. It is rated at 100 watts power output and operates with 10 dB typical gain. Nitride surface
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35VDC
1-877-GOLDMOS
1522-PTF
10134
capacitor siemens 4700 35
BDS31314-6-452
transistor t 2180
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K-CNM0406
Abstract: db25 pin male H2 RESISTORS db25 pin Enplas socket ots-28 LMK325BJ106MN MAX1464 MAX1464EVKIT P220ECT GRM216R71H102K
Text: 19-0582; Rev 0; 12/06 MAX1464 Evaluation Kit The MAX1464 evaluation kit EV kit is designed to evaluate the MAX1464 high-performance, low-power, low-noise multichannel sensor signal processor. The EV kit includes: an evaluation PCB, the EV board that contains
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MAX1464
MAX1464;
MAX1464
K-CNM0406
db25 pin male
H2 RESISTORS
db25 pin
Enplas socket ots-28
LMK325BJ106MN
MAX1464EVKIT
P220ECT
GRM216R71H102K
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resistor 220 ohm
Abstract: 2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM capacitor siemens 4700 35 200B G200 2.4 ghz 5 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM
Text: PTF 10065 30 Watts, 1.93–1.99 GHz GOLDMOS Field Effect Transistor Description The PTF 10065 is a 30–watt GOLDMOS FET intended for PCS amplifier applications from 1.93 to 1.99 GHz. It typically operates with 11 dB gain. Nitride surface passivation and full gold metallization
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P220ECT-ND
1-877-GOLDMOS
1522-PTF
resistor 220 ohm
2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM
capacitor siemens 4700 35
200B
G200
2.4 ghz 5 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM
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resistor 220 ohm
Abstract: capacitor siemens 4700 35 P Ferrite Siemens 200B G200 transistor amplifier 3 ghz 10 watts 2.4 ghz 5 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM transistor c 380 30-WATT
Text: PTF 10065 GOLDMOS Field Effect Transistor 30 Watts, 1.93–1.99 GHz Description The PTF 10065 is a 30–watt GOLDMOS FET intended for PCS amplifier applications from 1.93 to 1.99 GHz. It typically operates with 11 dB gain. Nitride surface passivation and full gold metallization
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P220ECT-ND
1-877-GOLDMOS
1522-PTF
resistor 220 ohm
capacitor siemens 4700 35
P Ferrite Siemens
200B
G200
transistor amplifier 3 ghz 10 watts
2.4 ghz 5 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM
transistor c 380
30-WATT
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smd TRANSISTOR 1702
Abstract: MARKING SMD TRANSISTOR DQ
Text: PTF180901 High Power RF LDMOS FET 90 W, 1805–1880 MHz, 1930–1990 MHz Description Features The PTF180901 is a 90 W, internally matched GOLDMOS FET intended for EDGE applications in the DCS/PCS bands. Full gold metallization ensures excellent device lifetime and reliability.
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PTF180901
PTF180901
smd TRANSISTOR 1702
MARKING SMD TRANSISTOR DQ
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P220E
Abstract: infineon smd package
Text: PTF180901E PTF180901F Thermally-Enhanced High Power RF LDMOS FETs 90 W, 1805 – 1880 MHz, 1930 – 1990 MHz Description The PTF180901E and PTF180901F are thermally-enhanced, internallymatched 90-watt GOLDMOS FETs intended for EDGE applications in the DCS/PCS bands. Thermally-enhanced packaging provides the coolest
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PTF180901E
PTF180901F
90-watt
P220E
infineon smd package
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BDS31314-6-452
Abstract: Transistor 4733
Text: PTF 10134 100 Watts, 2.1–2.2 GHz GOLDMOS Field Effect Transistor Description The PTF 10134 is an internally matched GOLDMOS FET intended for WCDMA applications from 2.1 to 2.2 GHz. It is rated at 100 watts power output and operates with 10 dB typical gain. Nitride surface
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35VDC
1-877-GOLDMOS
1522-PTF
BDS31314-6-452
Transistor 4733
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY GOLDMOS Field Effect Transistor 90 Watt, DCS/PCS Band PTF 102098* Description Key Features The PTF 102098 is a 90–watt, internally matched GOLDMOS FET intended for EDGE applications in the DCS/PCS Band. This LDMOS device operates at 47% efficiency P-1dB and 14.5 dB linear gain. Full gold metallization
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PCD1287CT
P220ECT
1-877-GOLDMOS
1522-PTF
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