PHILIPS FR 310 Search Results

ic la 1260

Abstract: TL 2665 la 315
Contextual Info: PHILIPS QBL 4/800 TETRODE for use as H.F. amplifier, modulator or frequency multiplier TETRODE pour utilisation ep amplificatrice H.F., modulatrice ou multiplicatrice de fréquence TETRODE zur Verwendung als HF-Verstärker, Modulator oder Frequenzvervielfacher

qe08-200

Abstract: qe 08 200 ks philips qe 08/200 qe 200 amplificateur hf 7Z00 QE08/200 2X40 "2x6 w"
Contextual Info: PHILIPS QE 08/200 BEAMPOWER TETRODE for use as amplifier, oscillator, frequency multiplier or modulator in A.M., S.S.B. and ,F.M. transmitters TÉTRODE À FAISCEAUX pour utilisation comme amplificatrice, oscillatrice, multlplicatrlce de fréquence ou modulatrlce

TYP 513 309

Abstract: philips fr 310 PXTA14 PMBTA64 Philips Semiconductors Selection Guide BST60 PDTA143 PMBTA14 2PD601A PDTA144
Contextual Info: Philips Semiconductors Surface mounted transistors Selection guide GENERAL PURPOSE APPLICATIONS hFE TYPE NUMBER V CEO •c V (mA) fr Plot (mw) min. max. typ (MHz) PAGE NPN BC817 45 500 250 100 600 200 159 BC818 25 500 250 100 600 200 159 BC846 65 100 250

HG-52

Contextual Info: PHILIPS JP9-15 Forced-air cooled packaged MAGNETRON for pulsed service at a fixed frequency within the range 934-5-9405 Me/s, capable of delivering a peak output power Wqp > 15 kW Timp = 0.1 usee MAGNETRON refroidi par air force, avec aimant incor­ poré, pour service d'impulsions a une fréquence fixe

BGY888

Abstract: DIN45004B SC16
Contextual Info: D IS C R E T E S E M IC O N D U C T O R S BGY888 CATV amplifier module Preliminary specification File under Discrete Semiconductors, SC16 December 1994 i• Philips Semiconductors PHILIPS P H ILIP S 7110fl2b 0007034 I 83^ This Material Copyrighted By Its Respective Manufacturer

philips fr 310

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D252 CGY887B 860 MHz, 27.8 dB gain push-pull amplifier Product specification 2001 Nov 27 Philips Semiconductors Product specification 860 MHz, 27.8 dB gain push-pull amplifier FEATURES CGY887B PINNING - SOT115J

receiver philips fr 310

Abstract: philips fr 310
Contextual Info: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1998 Oct 01 Philips Sem iconductors 1999 Mar 30 PHILIPS Philips Semiconductors Product specification Optical receiver module BGE883BO FEATURES PIN N IN G -S O T115U • Excellent linearity PIN

BUK416-200AE

Abstract: t7700
Contextual Info: Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION PINNING - SOT227B PIN 1 2 3 4 QUICK REFERENCE DATA SYMBOL isloi DS ON MAX. MAX. UNIT -200AE 200 63 310 0.035 -200BE 200 55 310 0.045 V A W n PARAMETER BUK416 Drain-source voltage

TRANSISTOR BC 448 smd

Abstract: JA101P smd transistor npn 491 transistor TO-92 bc108 transistor pn2222 BC853B transistor MPSA77 jc5010 215 BC307 smd 2PB601A
Contextual Info: SELECTION GUIDE NPN PNP NPN/PNP NPN PNP Leaded Leaded SMD SMD SMD page page page page page 38 41 44 44 45 46 47 48 48 48 General purpose amplification and switching transistors Low-power transistors 17 Transistor arrays 22 Medium-power transistors 23 24 Power transistors

bgy588n

Abstract: DIN45004B SOT-115J
Contextual Info: Philips Semiconductors Product specification CATV amplifier module BGY588N PINNING -SOT115J FEATURES • Excellent linearity PIN DESCRIPTION • Extremely low noise 1 input • Silicon nitride passivation 2 common • Rugged construction 3 common • TiPtAu metallized crystals ensure optimal reliability.

philips fr 310

Abstract: BGY588N equivalent
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D252 BGY588N 550 MHz, 34.5 dB gain push-pull amplifier Product specification Supersedes data of 2000 Feb 14 2001 Oct 22 Philips Semiconductors Product specification 550 MHz, 34.5 dB gain push-pull amplifier

construction of photo diode

Abstract: diode laser 1310 fiber monomode 4 PIN SOT115
Contextual Info: DISCRETE SEMICONDUCTORS D lh m S G iE E Î BGE847BO/FCO; BGE847BO/SCO Optical receiver modules Preliminary specification Philips Sem iconductors 2000 Jan 10 PHILIPS Philips S em ico n d uctors P relim inary sp ecification BGE847BO/FCO; BGE847BO/SCO Optical receiver modules

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D252 BGY588N CATV amplifier module Preliminary specification 1999 Jan 07 Philips Semiconductors Preliminary specification CATV amplifier module BGY588N PINNING - SOT115J FEATURES • Excellent linearity

philips fr 310

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D252 BGY588N CATV amplifier module Product specification Supersedes data of 1999 Jan 01 1999 Mar 29 Philips Semiconductors Product specification CATV amplifier module BGY588N FEATURES PINNING - SOT115J • Excellent linearity

gsm interfacing with arm7 processor

Abstract: nikko BP317 UAA3522 VWS22110 interfacing gps gsm GMSK modulator PHILIPS GSM ic HP165XX "VLSI TECHNOLOGY" ARM7TDMI DSP
Contextual Info: VWS22110 GSM OneC-GPRS Combining Power and GPRS Capability PCM VBAFE PRAM VITERBI CIPHER & AUDIO IT & TIMER DAI FIFO GM SK DROM FIFO RX ADC OAK+ PROM PLL & CLOCK DRAM The GSM OneC™ is the most integrated single chip solution in the MODE & CONF REG EXCHANGE

delay line philips

Abstract: video luminance delay adder SAA7151B SAA7152 SAA7191B CFRQ
Contextual Info: b 3E » • ^53^24 DD7ßDb3 ISIC3 74T Philips Semiconductors Video Products Preliminary specification Digital video comb filter DCF SAA7152 NAPC/PHILIPS SEMICOND 1. 2. FEATURES • Com b filter circuit for lum inance and chrom inance separation • A pplicable for standards

receiver philips fr 310

Abstract: AN 6752 ic bge847bo
Contextual Info: DISCRETE SEMICONDUCTORS BITÂ S y i I T BGE847BO/FC Optical receiver module Product specification Supersedes data of 1998 Oct 01 Philips Sem iconductors 1999 Mar 30 PHILIPS Philips Semiconductors Product specification Optical receiver module BGE847BO/FC FEATURES

BAW62

Contextual Info: • bbSB'IBl DD2b352 40b « A P X N AMER PHILIPS/DISCRETE BAW62 blE D HIGH-SPEED SILICON DIODE Planar epitaxial high-speed diode in a DO-35 envelope. The BAW62 is prim arily intended for fast logic applications. Q U IC K R E F E R E N C E D A T A Continuous reverse voltage

ECG941M

Abstract: ECG941D 9CTI ECG941 T179 456 kHz filter BB3T 3B74 ECG9410
Contextual Info: / PHILIPS E 17E C G INC J> b b S B T B û ECG941 ,ECG941 D, ECG941M INTERNALLY-COMPENSATED OPERATIONAL AMPLIFIER semiconductors Features: N o Frequency Compensation Required Short-C ircuit Protection Offset Volta ge N u ll C ap a b ility Large Com m on-M ode and Differential

ECG992

Abstract: TA-2500
Contextual Info: PHILIPS E C G INC 17E Û ECG bb53“i 2 â 000452b 1 Wt J^ ~ 7 ^ ~ 0 5 ^ 0 ECG992 Sem iconductors Features • Wide single supply voltage range or dual supplies 4 Independent Operational Amplifiers 14 13 12 I I 10 9 e — r .2 8 0 "< 7 .ll> MAX. 4V d c to 36V q c

transistor 1Bp

Abstract: bc847 1gp transistor bc848 1Lp marking code 1gp 1Bp transistor bc846 BC646B bc847c
Contextual Info: Philips Semiconductors Product specification NPN general purpose transistors BC846; BC847; BC848 FEATURES PINNING • Low current max. 100 mA PIN • Low voltage (max. 65 V). APPLICATIONS DESCRIPTION 1 base 2 emitter 3 collector • General purpose switching and amplification.

BAW62

Abstract: 1970 oscilloscope T0309 T-03-09
Contextual Info: SbE D • 711002b 004031^ 231 M P H I N SbE D PHILIPS INTERNATIONAL BAW62 Jj U O C □ UU 1 r - o 3 ~ o * \ HIGH-SPEED SILICON DIODE Planar epitaxial high-speed diode in a DO-35 envelope. The BAW62 is primarily intended for fast logic applications. QUICK REFERENCE DATA

BFR93AW

Abstract: MBG204 marking G SOT323 Transistor BFR93A
Contextual Info: Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR93AW FEATURES DESCRIPTION • High power gain Silicon NPN transistor encapsulated in a plastic SOT323 S-mini package. The BFR93AW uses the same crystal as the SOT23 version, BFR93A.

marking BJp

Abstract: BCX71J f 630 Bkp marking code BCX71H
Contextual Info: Philips Semiconductors Product specification PNP general purpose transistors BCX71 series FEATURES PINNING • Low current max. 100 mA PIN DESCRIPTION • Low voltage (max, 45 V) 1 base • Low noise. 2 emitter 3 collector APPLICATIONS • Low level, low noise, low frequency applications in