PHOTODIODES 190-1100 NM SILICON PIN Search Results

G1qr

Abstract: s4751 ir remote power meter cash drawer colorimeter
Contextual Info: Selection Guide Features Spectral R esponse Range nm 200 400 600 800 10 00 M ajor Applications Ty p e No. Listed P age S 1 3 3 6 .S 1 3 3 7 Series 14, 15 S 1 2 2 6 ,S 1 227 Series 16, 17 18, 19 1200 Silicon Photodiodes 190 1100 190 U V to IR range, for precision photometry

near IR photodiodes

Abstract: S8745-01 S8558
Contextual Info: Selection guide - February 2014 Si Photodiodes Lineup of Si photodiodes for UV to near IR, radiation HAMAMATSU PHOTONICS K.K. S i P h o t o d i o d e Si Photodiodes Lineup of Si photodiodes for UV to near IR, radiation Si photodiode package •··················································· 5

P873-G35-552

Abstract: p1760-04 P873-13
Contextual Info: Opto-semiconductors CONDENSED CATALOG 1987 Hamamatsu Photonics Solid State Division has devel­ oped a variety of opto-electronic semiconductor de­ vices. These competitively priced high quality products are designed to meet the requirements of general and

United Detector Technology Photodiodes

Abstract: United Detector Technology United Detector Technology, silicon photodiode United Detector silicon photodiode PIN-3DP PIN-10D United Detector Technology photodiode 601 Opto isolator PIN-25D United Detector Technology 10dp
Contextual Info: PIN SERIES PLANAR-DIFFUSED SILICON PHOTODIODES LJ UNITED DETECTOR TECHNOLOGY 9310987 UNITED DEÍECTOR UNITED V 64C 0 0 7 8 7 "bM DETECTOR T-41-53 BICHA 7 □ 00D 7fl? h | ~ PIN SERIES PLANAR-DIFFUSED SILICON F •f ! M • D SERIES PIN PHOTODIODE SPECIFICATIONS

Photodiode, TO-5,

Abstract: ALCAN S1406-06 S1406-03 340nm Borosilicate S1226 1M12 S1336 hamamatsu PIN TO5
Contextual Info: SILICON PHOTODIODES WITH BUILT-IN OP AMP S1406 SERIES HAMAMATSU T E C H N IC A L D A T A FEATURES • Uses UV enhanced s ilic o n p h o to d io d e s S1226, S1336 series • FET in p u t o p e ra tio n a l a m p lifie r ( I b = 30pA) • H erm etica lly sealed in th e TO-5 package

FIL-UV50

Abstract: FIL-UV100 PIN-10D XUV-005 UV-100 UV-100L PIN-5D PIN-5DPI UV-035DQC PIN-10AP
Contextual Info: UV Enhanced Series Inversion Layers and Planar Diffused Silicon Photodiodes OSI Optoelectronics offers two distinct families of UV enhanced silicon photodiodes. Inversion channel series and planar diffused series. Both families of devices are especially designed for low noise detection in the

C1103-02

Abstract: m5920 m59203 S3477-03
Contextual Info: THERMOELECTRICALLY-COOLED SILICON PHOTODIODES S2592, S3477 SERIES HAM AM ATSU TECHNICAL DATA For low-light-level detection from UV to near IR. Highly stable operation. Hamamatsu offers therm oelectrical ly-cooled silicon photodiodes with a wide sensitivity range from UV to

Ultrafast Photodiode InGaAs

Abstract: Ultrafast Photodetectors GMbh UPD-300 vogt UPD-200 ALPHALAS Photodiodes 190-1100 nM silicon PIN ultrafast photodiode UPD-200-SD UPD-70 IR2
Contextual Info: ALPHALAS GmbH ULTRAFAST PHOTODETECTORS UPD FEATURES: - ultra high-speed operation - risetime below 40 picoseconds - wide spectral ranges - built-in biasing - long-life battery - coaxial photodiode coupling - compact design - high sensitivity APPLICATIONS:

C30902EH

Contextual Info: Silicon Avalanche Photodiodes C30902 Series High Speed APDs for Analytical and Biomedical Lowest Light Detection Applications Overview Features and Benefits Excelitas’ C30902EH avalanche photodiode is fabricated with a doublediffused “reach-through” structure. This

C30902EH

Abstract: C30902SH-DTC PerkinElmer Avalanche Photodiode geiger apd avalanche photodiodes geiger C30902 APD, laser, range, finder avalanche photodiode ghz C30921EH
Contextual Info: High Speed APDs for Analytical and Biomedical Lowest Light Detection Applications Overview PerkinElmer’s C30902EH avalanche photodiode is fabricated with a doublediffused “reach-through” structure. This structure provides high responsivity between 400 and 1000 nm as well as

laser range finder schematics

Abstract: BPW34 application note "laser range finder" 254 nm uv LED SPOT-9DMI APPLICATION NOTE BpW34 far uv photodiode UDT sensors BPX65 PIN-10AP
Contextual Info: TABLE OF CONTENTS Revision 98.3 Index and Selection Guide Photodiode Characteristics and Applications Application Notes and Further Reading Sources Standard Photodiodes, Electro-Optical Specifications and Design Notes Planar Diffused Photodiodes Photoconductive Series

S5590

Contextual Info: 4 2 2 clfc.Qcl 0 0 Q 4 5R S Q77 Si PHOTODIODES WITH PRE-AMP S5590, S5591 SU Photodiode and Pre-amp integrated with feedback resistance and capacitance FEATURES • UV to near IR silicon photodiode optimized for pre­ cision photometry • Compact package with quartz window

Contextual Info: Silicon Avalanche Photodiode SAE-Series NIR-Enhanced DESCRIPTION The SAE230NS and SAE500NS epitaxial avalanche photodiodes are general purpose APDs with high responsivity and extremely fast rise and fall times through out the 550 to 1050 nm wavelength range.

SAE500

Abstract: SAE230NS SAE230NX SAE500NX rangefinding SAE230 SAE500NS
Contextual Info: Silicon Avalanche Photodiode SAE-Series NIR-Enhanced DESCRIPTION The SAE230NS and SAE500NS epitaxial avalanche photodiodes are general purpose APDs with high responsivity and extremely fast rise and fall times through out the 550 to 1050 nm wavelength range.

avalanche photodiode bias

Contextual Info: Silicon Avalanche Photodiode SAE-Series NIR-Enhanced DESCRIPTION The SAE230NS and SAE500NS epitaxial avalanche photodiodes are general purpose APDs with high responsivity and extremely fast rise and fall times through out the 550 to 1050 nm wavelength range.

555D

Abstract: colorimeter uv photodiode for 254nm UDT model UDT-455 UDT-451 UDT-555d UDT-5550 UDT-555UV UDT Sensors
Contextual Info: 0 D T SEN SOR S INC 4TE D • 15 37 11 5 0 G G 1 57 5 DIM ■ UDTS T'^/'£7 PHOTOPS SERIES Hybrid Photodetector/Am plifier C o m b in a tio n s LOW-NOISE DETECTORS. UDT photodiodes em ploy state-of-the-art technology to provide rugged detectors with high-speed and low-noise for

Contextual Info: Silicon Avalanche Photodiode SAE-Series NIR-Enhanced DESCRIPTION The SAE230NS and SAE500NS epitaxial avalanche photodiodes are general purpose APDs with high responsivity and extremely fast rise and fall times through out the 550 to 1050 nm wavelength range.

United Detector Technology Photodiodes

Abstract: UDT-500D 555D United Detector Technology udt 500d photodetector UDT-020D uv photodiode for 254nm UDT-555d 500D photodetectors UDT-450
Contextual Info: UNITGD DETECTOR TECHNOLOGY A Division of ILC Technology, Inc. U N I T E » D E T E C T O R IDE D ' T 3 1 EHfl7 • □ □ □ ! □ ? ? S | r - w PHOTOPS" Hybrid - ù > '7 Photodetector/Amplifiers APPLICATIONS LOW-NOISE DETECTORS. ■ ■ ■ ■ ■ ■

Contextual Info: Silicon Avalanche Photodiode SAE-Series NIR-Enhanced DESCRIPTION The SAE230NS and SAE500NS epitaxial avalanche photodiodes are general purpose APDs with high responsivity and extremely fast rise and fall times through out the 550 to 1050 nm wavelength range.

SAE500NX

Abstract: SAE230NS avalanche photodiode noise factor 0E-07 SAE230NX m8 smd rise time avalanche photodiode
Contextual Info: Silicon Avalanche Photodiode SAE-Series NIR-Enhanced DESCRIPTION The SAE230NS and SAE500NS epitaxial avalanche photodiodes are general purpose APDs with high responsivity and extremely fast rise and fall times through out the 550 to 1050 nm wavelength range.

Contextual Info: OC-3/STM-1 Digital Receiver Module irn n n Model # 2803A T he 2803A Digital Receiver module is designed for Features: • Signal Detect Status use in transmission systems of medium to high ECL or PECL speed data communication applications. The receiver operates at the SONET OC-3 or STM-1 (155 Mb/s) data

Contextual Info: Detectors Silicon Avalanche Photodiode SAE-Series NIR-Enhanced Description The SAE230NS and SAE500NS epitaxial avalanche photodiodes are general purpose APDs with high responsivity and extremely fast rise and fall times through out the 550 to 1050 nm wavelength range. The responsivity is optimised for 900 nm for use

C1383 NPN transistor collector base and emitter

Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383
Contextual Info: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,

led interface with 2803A

Abstract: 2803A Ortel
Contextual Info: OC-3/STIVI-1 Digital Receiver Module niuin Model # 2803A T he 2803A Digital Receiver module is designed for Features: • Signal Detect Status use in transmission systems of medium to high ECL o r PECL speed data com m unication applications. The receiver