FDIP24W
Abstract: M27128A M2716 M27256 M2732A M27512 M2764A M27C256B M27C64A M29F040
Text: MEMORIES and SMARTCARD PRODUCTS NON VOLATILE MEMORIES UV & OTP EPROM, 5V Operation Size References Description Package 16 Kb M2716 16 Kb x8 , 350 - 450ns, NMOS FDIP24W 32 Kb M2732A 32 Kb (x8), 200 - 450ns, NMOS FDIP24W M2764A 64 Kb (x8), 180 - 450ns, NMOS
|
Original
|
PDF
|
M2716
450ns,
FDIP24W
M2732A
M2764A
FDIP28W
M27C64A
FDIP24W
M27128A
M2716
M27256
M2732A
M27512
M2764A
M27C256B
M27C64A
M29F040
|
a20 Schottky diode st
Abstract: M48Z2M1V M48Z2M1Y up 5135 Zeropower
Text: M48Z2M1Y M48Z2M1V 5 V or 3.3 V, 16 Mbit 2 Mb x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM, power-fail control circuit, and batteries ■ Conventional SRAM operation; unlimited WRITE cycles ■ 10 years of data retention in the absence of
|
Original
|
PDF
|
M48Z2M1Y
M48Z2M1V
M48Z2M1Y:
M48Z2M1V:
M48Z2M1V
a20 Schottky diode st
M48Z2M1Y
up 5135
Zeropower
|
Untitled
Abstract: No abstract text available
Text: M48T513Y M48T513V 5.0 or 3.3V, 4 Mbit 512 Kbit x 8 TIMEKEEPER SRAM FEATURES SUMMARY • INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY, and CRYSTAL ■ YEAR 2000 COMPLIANT ■ BCD CODED CENTURY, YEAR, MONTH, DAY, DATE, HOURS, MINUTES, and
|
Original
|
PDF
|
M48T513Y
M48T513V
36-pin
M48T513Y:
M48T513V:
|
Untitled
Abstract: No abstract text available
Text: M48T513Y M48T513V 5.0 or 3.3V, 4 Mbit 512 Kbit x 8 TIMEKEEPER SRAM FEATURES SUMMARY • INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY, and CRYSTAL ■ YEAR 2000 COMPLIANT ■ BCD CODED CENTURY, YEAR, MONTH, DAY, DATE, HOURS, MINUTES, and
|
Original
|
PDF
|
M48T513Y
M48T513V
36-pin
M48T513Y:
M48T513V:
|
up 5135
Abstract: No abstract text available
Text: M48Z2M1Y M48Z2M1V 5 V or 3.3 V, 16 Mbit 2 Mb x 8 ZEROPOWER SRAM Not recommended for new design Features • Integrated, ultra low power SRAM, power-fail control circuit, and batteries ■ Conventional SRAM operation; unlimited WRITE cycles ■ 10 years of data retention in the absence of
|
Original
|
PDF
|
M48Z2M1Y
M48Z2M1V
M48Z2M1Y:
M48Z2M1V:
up 5135
|
Untitled
Abstract: No abstract text available
Text: M48T513Y M48T513V 5.0 or 3.3V, 4 Mbit 512 Kbit x 8 TIMEKEEPER SRAM FEATURES SUMMARY • INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY, and CRYSTAL ■ YEAR 2000 COMPLIANT ■ BCD CODED CENTURY, YEAR, MONTH, DAY, DATE, HOURS, MINUTES, and
|
Original
|
PDF
|
M48T513Y
M48T513V
36-pin
M48T513Y:
M48T513V:
|
a20 Schottky diode st
Abstract: No abstract text available
Text: M48Z2M1Y M48Z2M1V 5 V or 3.3 V, 16 Mbit 2 Mb x 8 ZEROPOWER SRAM Not recommended for new design Features • Integrated, ultra low power SRAM, power-fail control circuit, and batteries ■ Conventional SRAM operation; unlimited WRITE cycles ■ 10 years of data retention in the absence of
|
Original
|
PDF
|
M48Z2M1Y
M48Z2M1V
M48Z2M1Y:
M48Z2M1V:
PLDIP36
a20 Schottky diode st
|
M48Z2M1V
Abstract: M48Z2M1Y
Text: M48Z2M1Y M48Z2M1V 5V or 3.3V, 16 Mbit 2Mb x 8 ZEROPOWER SRAM FEATURES SUMMARY • INTEGRATED, ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, and BATTERIES ■ CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES ■ 10 YEARS OF DATA RETENTION IN THE
|
Original
|
PDF
|
M48Z2M1Y
M48Z2M1V
36-pin,
M48Z2M1Y:
PLDIP36
M48Z2M1V:
1/17d
M48Z2M1V
M48Z2M1Y
|
44-PIN
Abstract: M48T513V M48T513Y SOH44
Text: M48T513Y* M48T513V* 5.0 or 3.3V, 4 Mbit 512 Kbit x 8 TIMEKEEPER SRAM FEATURES SUMMARY • INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY, and CRYSTAL ■ YEAR 2000 COMPLIANT ■ BCD CODED CENTURY, YEAR, MONTH, DAY, DATE, HOURS, MINUTES, and
|
Original
|
PDF
|
M48T513Y*
M48T513V*
M48T513Y:
M48T513V:
44-PIN
M48T513V
M48T513Y
SOH44
|
M48Z2M1V
Abstract: M48Z2M1Y
Text: M48Z2M1Y M48Z2M1V 5V or 3.3V, 16 Mbit 2Mb x 8 ZEROPOWER SRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ INTEGRATED, ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, AND BATTERIES CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES 10 YEARS OF DATA RETENTION IN THE
|
Original
|
PDF
|
M48Z2M1Y
M48Z2M1V
M48Z2M1Y:
M48Z2M1V:
36-pin,
PLDIP36
M48Z2M1Y,
M48Z2M1V
M48Z2M1Y
|
44-PIN
Abstract: M48T513V M48T513Y SOH44
Text: M48T513Y M48T513V 5.0 or 3.3V, 4 Mbit 512 Kbit x 8 TIMEKEEPER SRAM FEATURES SUMMARY • INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY, and CRYSTAL ■ YEAR 2000 COMPLIANT ■ BCD CODED CENTURY, YEAR, MONTH, DAY, DATE, HOURS, MINUTES, and
|
Original
|
PDF
|
M48T513Y
M48T513V
36-pin
M48T513Y:
M48T513V:
44-PIN
M48T513V
M48T513Y
SOH44
|
44-PIN
Abstract: M48T513V M48T513Y SOH44
Text: M48T513Y M48T513V 5.0 or 3.3V, 4 Mbit 512 Kbit x 8 TIMEKEEPER SRAM FEATURES SUMMARY • INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY, and CRYSTAL ■ YEAR 2000 COMPLIANT ■ BCD CODED CENTURY, YEAR, MONTH, DAY, DATE, HOURS, MINUTES, and
|
Original
|
PDF
|
M48T513Y
M48T513V
36-pin
M48T513Y:
M48T513V:
44-PIN
M48T513V
M48T513Y
SOH44
|
M48Z2M1
Abstract: M48Z2M1Y
Text: M48Z2M1 M48Z2M1Y 16 Mbit 2Mb x 8 ZEROPOWER SRAM FEATURES SUMMARY • INTEGRATED, ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, and BATTERIES ■ CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES ■ 10 YEARS OF DATA RETENTION IN THE ABSENCE OF POWER
|
Original
|
PDF
|
M48Z2M1
M48Z2M1Y
M48Z2M1:
PLDIP36
M48Z2M1Y:
M48Z2M1,
M48Z2M1
M48Z2M1Y
|
44-PIN
Abstract: M48T513V M48T513Y SOH44
Text: M48T513Y M48T513V 3.3V - 5V, 4 Mbit 512 Kbit x 8 TIMEKEEPER SRAM FEATURES SUMMARY • INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY, and CRYSTAL ■ YEAR 2000 COMPLIANT ■ BCD CODED CENTURY, YEAR, MONTH, DAY, DATE, HOURS, MINUTES, and
|
Original
|
PDF
|
M48T513Y
M48T513V
M48T513Y:
M48T513V:
44-PIN
M48T513V
M48T513Y
SOH44
|