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    STMicroelectronics M48Z2M1Y-70PL1

    IC NVSRAM 16MBIT PAR 36PLDIP
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    M48Z2M1Y Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    M48Z2M1Y STMicroelectronics 16 Mb (2Mb x 8) ZEROPOWER SRAM Original PDF
    M48Z2M1Y STMicroelectronics 16 MBIT (2MB x 8) ZEROPOWER SRAM Original PDF
    M48Z2M1Y STMicroelectronics 16 MBIT (2MB x 8) ZEROPOWER SRAM Original PDF
    M48Z2M1Y-701 STMicroelectronics 5V or 3.3V, 16 Mbit (2Mb x 8) ZEROPOWER SRAM Original PDF
    M48Z2M1Y-70PL1 STMicroelectronics 16 MBit (2 MB x 8) ZEROPOWER SRAM Original PDF
    M48Z2M1Y-70PL1 STMicroelectronics 16 Mbit (2Mb x8) ZEROPOWER SRAM Original PDF
    M48Z2M1Y-70PL1 STMicroelectronics 16 MBIT (2MB x 8) ZEROPOWER SRAM Original PDF
    M48Z2M1Y-70PL1 STMicroelectronics 16 Mb 2Mb x 8 ZEROPOWER SRAM Original PDF
    M48Z2M1Y-70PL1 STMicroelectronics Memory, Integrated Circuits (ICs), IC NVSRAM 16MBIT 70NS 36DIP Original PDF
    M48Z2M1Y-70PL9 STMicroelectronics 16 MBit (2 MB x 8) ZEROPOWER SRAM Original PDF
    M48Z2M1Y-70PL9 STMicroelectronics 16 Mb 2Mb x 8 ZEROPOWER SRAM Original PDF
    M48Z2M1YPL STMicroelectronics 16 Mb 2Mb x 8 ZEROPOWER SRAM Original PDF

    M48Z2M1Y Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    a20 Schottky diode st

    Abstract: M48Z2M1V M48Z2M1Y up 5135 Zeropower
    Text: M48Z2M1Y M48Z2M1V 5 V or 3.3 V, 16 Mbit 2 Mb x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM, power-fail control circuit, and batteries ■ Conventional SRAM operation; unlimited WRITE cycles ■ 10 years of data retention in the absence of


    Original     		PDF M48Z2M1Y M48Z2M1V M48Z2M1Y: M48Z2M1V: M48Z2M1V a20 Schottky diode st M48Z2M1Y up 5135 Zeropower

    M48Z2M1

    Abstract: M48Z2M1Y a20 Schottky diode st
    Text: M48Z2M1 M48Z2M1Y 16 Mbit 2Mb x8 ZEROPOWER SRAM • INTEGRATED LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERIES ■ CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES ■ 10 YEARS of DATA RETENTION in the ABSENCE of POWER ■ AUTOMATIC POWER-FAIL CHIP DESELECT


    Original     		PDF M48Z2M1 M48Z2M1Y PMLDIP36 M48Z2M1: M48Z2M1Y: M48Z2M1/2M1Y M48Z2M1 M48Z2M1Y a20 Schottky diode st

    up 5135

    Abstract: No abstract text available
    Text: M48Z2M1Y M48Z2M1V 5 V or 3.3 V, 16 Mbit 2 Mb x 8 ZEROPOWER SRAM Not recommended for new design Features • Integrated, ultra low power SRAM, power-fail control circuit, and batteries ■ Conventional SRAM operation; unlimited WRITE cycles ■ 10 years of data retention in the absence of


    Original     		PDF M48Z2M1Y M48Z2M1V M48Z2M1Y: M48Z2M1V: up 5135

    a20 Schottky diode st

    Abstract: No abstract text available
    Text: M48Z2M1Y M48Z2M1V 5 V or 3.3 V, 16 Mbit 2 Mb x 8 ZEROPOWER SRAM Not recommended for new design Features • Integrated, ultra low power SRAM, power-fail control circuit, and batteries ■ Conventional SRAM operation; unlimited WRITE cycles ■ 10 years of data retention in the absence of


    Original     		PDF M48Z2M1Y M48Z2M1V M48Z2M1Y: M48Z2M1V: PLDIP36 a20 Schottky diode st

    M48Z2M1V

    Abstract: M48Z2M1Y
    Text: M48Z2M1Y M48Z2M1V 5V or 3.3V, 16 Mbit 2Mb x 8 ZEROPOWER SRAM FEATURES SUMMARY • INTEGRATED, ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, and BATTERIES ■ CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES ■ 10 YEARS OF DATA RETENTION IN THE


    Original     		PDF M48Z2M1Y M48Z2M1V 36-pin, M48Z2M1Y: PLDIP36 M48Z2M1V: 1/17d M48Z2M1V M48Z2M1Y

    M48Z2M1V

    Abstract: M48Z2M1Y
    Text: M48Z2M1Y M48Z2M1V 5V or 3.3V, 16 Mbit 2Mb x 8 ZEROPOWER SRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ INTEGRATED, ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, AND BATTERIES CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES 10 YEARS OF DATA RETENTION IN THE


    Original     		PDF M48Z2M1Y M48Z2M1V M48Z2M1Y: M48Z2M1V: 36-pin, PLDIP36 M48Z2M1Y, M48Z2M1V M48Z2M1Y

    M48Z2M1

    Abstract: M48Z2M1Y
    Text: M48Z2M1 M48Z2M1Y 16 Mb 2Mb x 8 ZEROPOWER SRAM DATA BRIEFING INTEGRATED LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERIES CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES 10 YEARS of DATA RETENTION in the ABSENCE of POWER AUTOMATIC POWER-FAIL CHIP DESELECT


    Original     		PDF M48Z2M1 M48Z2M1Y M48Z2M1: M48Z2M1Y: M48Z2M1/2M1Y A0-A20 PMLDIP36 M48Z2M1 M48Z2M1Y

    M48Z2M1

    Abstract: M48Z2M1Y a20 Schottky diode st
    Text: M48Z2M1 M48Z2M1Y 16 Mbit 2Mb x8 ZEROPOWER SRAM • INTEGRATED LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERIES ■ CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES ■ 10 YEARS of DATA RETENTION in the ABSENCE of POWER ■ AUTOMATIC POWER-FAIL CHIP DESELECT


    Original     		PDF M48Z2M1 M48Z2M1Y PMLDIP36 M48Z2M1: M48Z2M1Y: M48Z2M1/2M1Y M48Z2M1 M48Z2M1Y a20 Schottky diode st

    M48Z2M1

    Abstract: M48Z2M1Y
    Text: M48Z2M1 M48Z2M1Y 16 Mbit 2Mb x 8 ZEROPOWER SRAM FEATURES SUMMARY • INTEGRATED, ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, and BATTERIES ■ CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES ■ 10 YEARS OF DATA RETENTION IN THE ABSENCE OF POWER


    Original     		PDF M48Z2M1 M48Z2M1Y M48Z2M1: PLDIP36 M48Z2M1Y: M48Z2M1, M48Z2M1 M48Z2M1Y

    M48Z2M1

    Abstract: M48Z2M1Y
    Text: M48Z2M1 M48Z2M1Y 16 Mb 2Mb x 8 ZEROPOWER SRAM INTEGRATED LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERIES CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES 10 YEARS of DATA RETENTION in the ABSENCE of POWER AUTOMATIC POWER-FAIL CHIP DESELECT


    Original     		PDF M48Z2M1 M48Z2M1Y M48Z2M1: M48Z2M1Y: PMLDIP36 M48Z2M1/2M1Y M48Z2M1 M48Z2M1Y

    SOH28

    Abstract: ic mt 1628 NVRAM STMicroelectronics date CODE so-8 soic date code stmicroelectronics Zeropower ram M48Z m48t35 STMicroelectronics PRODUCT code date m48 M48Z129V M48Z18
    Text: Non-volatile RAMs Selection guide September 2007 www.st.com/nvram ZEROPOWER NVRAMs • ■ Battery backed SRAM 16 Mbit to 16 Kbit Density 16 Mb 2 Mx8 4 Mb (512 Kx8) 1 Mb (128 Kx8) 256 Kb (32 Kx8) 64 Kb (8 Kx8) 16 Kb (2 Kx8) Part number VCC [V] M48Z2M1Y


    Original     		PDF M48Z2M1Y M48Z2M1V M48Z128Y M48Z35 M48Z18 M48Z08 M48Z58 M48Z32V M48Z512AY M48Z129V SOH28 ic mt 1628 NVRAM STMicroelectronics date CODE so-8 soic date code stmicroelectronics Zeropower ram M48Z m48t35 STMicroelectronics PRODUCT code date m48 M48Z129V M48Z18

    ST L1117

    Abstract: ST MICROELECTRONICS L1117 33 LM7905 TO-92 ENE CP2211 CP2211 TL496 equivalent cp2206 MC34153 L7805 SOT 89 transistor L7905
    Text: Technology for Innovators TM Standard Linear Products Cross-Reference Including Amplifiers, Comparators, Timers, Peripheral Drivers, Power Management Controllers, References, Regulators, Supervisors, Shunts, Transmitters and Receivers INTERFACE COMPARATORS


    Original     		PDF A011905 ST L1117 ST MICROELECTRONICS L1117 33 LM7905 TO-92 ENE CP2211 CP2211 TL496 equivalent cp2206 MC34153 L7805 SOT 89 transistor L7905

    TSOP40 Flash

    Abstract: m48z32y M27V512 FDIP24W M27128A M2716 M27256 M2732A M27512 M2764A
    Text: MEMORY PRODUCTS SELECTOR GUIDE A C) NMOS UV EPROM, 5V Operation Size 16 Kb 32 Kb 64 Kb 128 Kb 256 Kb 512 Kb Ref M2716 M2732A M2764A M27128A M27256 M27512 Description 16 Kb x8), 350 - 450ns, NMOS 32 Kb (x8), 200 - 450ns, NMOS 64 Kb (x8), 180 - 450ns, NMOS


    Original     		PDF M2716 M2732A M2764A M27128A M27256 M27512 450ns, TSOP40 Flash m48z32y M27V512 FDIP24W M27128A M2716 M27256 M2732A M27512 M2764A

    FDIP24W

    Abstract: M27128A M2716 M27256 M2732A M27512 M2764A M27C256B M27C64A M29F040
    Text: MEMORIES and SMARTCARD PRODUCTS NON VOLATILE MEMORIES UV & OTP EPROM, 5V Operation Size References Description Package 16 Kb M2716 16 Kb x8 , 350 - 450ns, NMOS FDIP24W 32 Kb M2732A 32 Kb (x8), 200 - 450ns, NMOS FDIP24W M2764A 64 Kb (x8), 180 - 450ns, NMOS


    Original     		PDF M2716 450ns, FDIP24W M2732A M2764A FDIP28W M27C64A FDIP24W M27128A M2716 M27256 M2732A M27512 M2764A M27C256B M27C64A M29F040

    TSOP32 FOOTPRINT

    Abstract: NVRAM 1KB SOH28 PCB FOOTPRINT M41T81 m48t35 M48T86 M48Z128 M48Z128V M48Z128Y M48Z129V
    Text: Non-Volatile RAMs KEEP TIME, PROTECT DATA NVRAM products offer fast non-volatile memory solutions up to 16 Mbit density using battery backed SRAM, in both surface mount and through-hole packages. Integrated features include battery and crystal, real time clock, watchdog timer, power-on reset, square wave


    Original     		PDF NL-5652 FLNVRAM/1000 TSOP32 FOOTPRINT NVRAM 1KB SOH28 PCB FOOTPRINT M41T81 m48t35 M48T86 M48Z128 M48Z128V M48Z128Y M48Z129V

    asm eagle

    Abstract: M28F101 M28F102 M28F201 M28F256 M28F512 texas 4mb dram M27C1024 Parallel NOR Flash Market MBX860
    Text: MEMORY SELECTOR Leading Edge Memories Index page Leading Edge Memories 1 Why a Broad Range? 2 Technology, Upgrades and Quality 6 Flash Memories: application flexibility 8 EEPROM and ASM: higher performance 10 OTP and UV EPROM: dependable solutions 14 Non-Volatile RAM:


    Original     		PDF BRMEMSEL/0997 asm eagle M28F101 M28F102 M28F201 M28F256 M28F512 texas 4mb dram M27C1024 Parallel NOR Flash Market MBX860

    Untitled

    Abstract: No abstract text available
    Text: M48Z2M1 M48Z2M1Y SGS-THOMSON IIIIM J ì ILIì M W IIÈ Ì 16 Mb 2Mb x 8 ZEROPOWER SRAM PR ELIM IN A R Y DATA • INTEGRATED LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERIES ■ CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES ■ 10 YEARS of DATA RETENTION in the


    OCR Scan     		PDF M48Z2M1 M48Z2M1Y 48Z2M M48Z2M1Y LDIP36 M48Z2M1/2M1Y 204ce, M48Z2M1, PMLDIP36-

    Untitled

    Abstract: No abstract text available
    Text: M48Z2M1 M48Z2M1Y SGS-THOMSON 16 Mb 2Mb x 8 ZEROPOWER SRAM PRELIMINARY DATA • INTEGRATED LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERIES ■ CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES ■ 10 YEARS of DATA RETENTION in the ABSENCE of POWER


    OCR Scan     		PDF M48Z2M1 M48Z2M1Y 48Z2M 48Z2M1/2M1Y 2048K 152words

    Untitled

    Abstract: No abstract text available
    Text: M48Z2M1 M48Z2M1Y SCS-THOMSON 16 Mb 2Mb x 8 ZEROPOWER SRAM INTEGRATED LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERIES CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES 10 YEARS of DATA RETENTION in the ABSENCE of POWER AUTOMATIC POWER-FAIL CHIP DESELECT


    OCR Scan     		PDF M48Z2M1 M48Z2M1Y M48Z2M1 M48Z2M1Y: M48Z2M1/2M1Y M48Z2M1, PMLDIP36

    Untitled

    Abstract: No abstract text available
    Text: M48Z2M1 M48Z2M1Y S G S -T H O M S O N n i ii5 in i * r a ( § s 16 Mb (2Mb x 8 ZEROPOWER® SRAM INTEGRATED LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERIES CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES 10 YEARS of DATA RETENTION in the


    OCR Scan     		PDF M48Z2M1 M48Z2M1Y LDIP36 M48Z2M1Y: M48Z2M1/2M1Y

    Untitled

    Abstract: No abstract text available
    Text: M48Z2M1 M48Z2M1Y SGS-THOMSON I I I I M J ì ILIì M W I I È Ì 16 Mb 2Mb x 8 ZEROPOWER SRAM PRELIMINARY DATA • INTEGRATED LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERIES ■ CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES ■ 10 YEARS of DATA RETENTION in the


    OCR Scan     		PDF M48Z2M1 M48Z2M1Y M48Z2M1 LDIP36 M48Z2M1/2M1Y 2048K M48Z2M1, PMLDIP36-

    Untitled

    Abstract: No abstract text available
    Text: 5 7 . M48Z2M1 M48Z2M1Y SGS-THOMSON [M D M [iL [iO T M O (§ S 16 Mb (2Mb x 8 ZERO PO W ER SRAM INTEGRATED LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERIES CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES 10 YEARS of DATA RETENTION in the ABSENCE of POWER


    OCR Scan     		PDF M48Z2M1 M48Z2M1Y M48Z2M1 M48Z2M1Y: M48Z2M1/2M1Y

    M48Z2M1

    Abstract: M48Z2M1Y
    Text: w , M48Z2M1 M 48Z 2M 1Y S G S -T H O M S O N k7 #» RitlDÊlMIlilLIKËinSMQtÊS 16 Mb 2Mb X 8 ZEROPOWER SRAM PR ELIM IN A R Y DATA • INTEGRATED LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERIES ■ CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES


    OCR Scan     		PDF M48Z2M1 M48Z2M1Y M48Z2M1: M48Z2M1Y 2048K M48Z2M1, PMLDIP36 PMLDIP36

    M48128Y

    Abstract: ds1245y DS1225Y
    Text: De usili • - S i1 ! i : i ; : í ; í ! u c í í : n 31 fVlb ro e :e o h i ■¡î i c ■. ;î.f i .1 o - DS1225AB M48Z08 DS1225AD M48Z18 bq4010Y M48Z58 bq4010/4823Y M48Z58Y bq4010Y bq4010


    OCR Scan     		PDF bq4010 bq4010Y bq4010/4823Y bq4011 bq4011Y/4833Y bq4013 bq4013Y bq4014 DS1225AB M48128Y ds1245y DS1225Y