PN102 Search Results

PNZ102

Abstract: PN102
Contextual Info: Phototransistors PNZ102 PN102 Silicon NPN Phototransistor Unit : mm ø4.6±0.15 Glass lens 6.3±0.3 For optical control systems Features High sensitivity 12.7 min. Wide spectral sensitivity, suited for detecting GaAs LEDs Low dark current : ICEO = 5 nA (typ.)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ102 (PN102) Silicon planar type Unit: mm φ4.6±0.15 For optical control systems 6.3±0.3 Glass lens M Di ain sc te on na tin nc ue e/ d • Features 12.7 min. • High sensitivity

Contextual Info: Panasonic Phototransistors PN101F, PN102F Silicon NPN Phototransistors For optical control system s • F eatures • F la t w in d o w design w hich is suited to optical system s • L ow d a rk c u r r e n t : I CEO = 5 nA typ. • F a st re sp o n se : tr, tf = 3 (J.s (typ.)

PT-103

Abstract: PH110 PT108A pt77 PH114 PH109 PN101 PN101F PT-101 PT-102
Contextual Info: - 288- I 1'J PT108A FH109 PH110 rn n ^ PH1161L PT8L PN101 PN101F PN102F PN102 PN106 PN107 PN108 PN107F PN108F PN10SCL PN109CL PN109F PN109L PN 110 PN111W PN115 PN116 PN120S PN121S PN123S PN126S PN127 PN147 £ tfc B & it & II min mA 'S 0.2 10 0.2 0.04 0.04

PN102F

Abstract: PNZ102F
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ102F (PN102F) Silicon planar type For optical control systems Unit: mm φ4.6±0.15 Glass window • Features ue pl d in ea an c se ed lud pl vi an m m es si tf ed ain ai fo

PN102F

Abstract: PNZ102F
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ102F (PN102F) Silicon planar type For optical control systems Unit: mm φ4.6±0.15 Glass window • Features 12.7 min. 4.5±0.2  Low dark current: ICEO = 5 nA (typ.)  Fast response: tr , tr = 3 µs (typ.)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ102F (PN102F) Silicon planar type For optical control systems Unit: mm φ4.6±0.15 Glass window • Features 12.7 min. M Di ain sc te on na tin nc ue e/ d 4.5±0.2  Low dark current: ICEO = 5 nA (typ.)

Contextual Info: Panasonic Phototransistors_ PN102 Silicon NPN Phototransistor For optical control systems • Features • H igh sensitivity • W ide spectral responsivity, suited for detecting GaAs LEDs • Low dark c u rre n t: I CEO = 5 nA typ. • Fast response : tr, tf = 3 (J.s (typ.)

PN102

Abstract: PNZ102
Contextual Info: Phototransistors PNZ102 PN102 Silicon planar type Unit: mm φ4.6±0.15 For optical control systems 6.3±0.3 Glass lens • Features 12.7 min. • High sensitivity • Wide spectral sensitivity characteristics, suited for detecting GaAs LEDs • Low dark current: ICEO = 5 nA (typ.)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ102 (PN102) Silicon planar type Unit: mm φ4.6±0.15 For optical control systems 6.3±0.3 Glass lens • Features 12.7 min. • High sensitivity • Wide spectral sensitivity characteristics, suited for detecting GaAs

Contextual Info: Phototransistors PNZ102F PN102F Silicon planar type For optical control systems Unit: mm φ4.6±0.15 Glass window • Features 12.7 min. 4.5±0.2  Low dark current: ICEO = 5 nA (typ.)  Fast response: tr , tr = 3 µs (typ.)  Wide directivity characteristics

PN102

Contextual Info: Panasonic Phototransistors PN102 Silicon NPN Phototransistor For optical control systems • Features • High sensitivity • W ide spectral responsivity, suited for detecting GaAs LEDs • Low dark current : ICEO = 5 nA typ. • Fast response : tr, tf = 3 |as (typ.)

PN102

Abstract: PNZ102
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ102 (PN102) Silicon planar type Unit: mm φ4.6±0.15 For optical control systems M Di ain sc te on na tin nc ue e/ d 6.3±0.3 Glass lens • Features 12.7 min. ue pl d in an c

smd transistor A7p

Abstract: PN101 PN101F PN102F
Contextual Info: Panasonic Phototransistors PN101F, PN102F Silicon NPN Phototransistors For optical control systems • Features • F la t w in d o w design w h ich is suited to optical system s • L ow d ark cu rre n t : ICEO = 5 nA typ. • F a st re sp o n se : tr, tf = 3 |as (typ.)

Contextual Info: DATA SHEET PHOTOCOUPLER PS2501-1,-4,PS2501L-1,-4 HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE MULTI PHOTOCOUPLER SERIES −NEPOC Series− DESCRIPTION The PS2501-1, -4 and PS2501L-1, -4 are optically coupled isolators containing a GaAs light emitting diode and an

2501 PHOTOCOUPLER

Abstract: PS2501-4-A MJ031 PS2501-1 PS2501-1-A PS2501-4 PS2501L-1 PS2501L-1-F3 PS2501L-4 PS2501L-1-A
Contextual Info: PHOTOCOUPLER PS2501-1,-4,PS2501L-1,-4 HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE MULTI PHOTOCOUPLER SERIES −NEPOC Series− DESCRIPTION The PS2501-1, -4 and PS2501L-1, -4 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon phototransistor.

NEC 2505

Abstract: 2505 photocoupler nl601 PS2505-1 PS2505-1-A PS2505-4-A PS2505L-1-E4 PS2505-4 PS2505L-4 PS2505-2
Contextual Info: DATA SHEET PHOTOCOUPLER PS2505-1,-2,-4,PS2505L-1,-2,-4 HIGH ISOLATION VOLTAGE AC INPUT RESPONSE TYPE MULTI PHOTOCOUPLER SERIES −NEPOC Series− DESCRIPTION The PS2505-1, -2, -4 and PS2505L-1, -2, -4 are optically coupled isolators containing GaAs light emitting diodes

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

PS7214-1A

Abstract: PS7214-1A-A PS7214-1A-E3 PS7214-1A-E3-A PS7214-1A-E4 PS7214-1A-F3 PS7214-1A-F4 PS7214-1A-F3-A PS7214-1AF3-A
Contextual Info: Solid State Relay OCMOS FET PS7214-1A 4-PIN SOP, 1.0 Ω LOW ON-STATE RESISTANCE 1-ch Optical Coupled MOS FET DESCRIPTION The PS7214-1A is a low on-state resistance solid state relay containing a GaAs LED on the input side and MOS FETs on the output side.

ps7122a-2a

Abstract: PS7122A-1A PS7122AL-1A PS7122AL-1A-E3 PS7122AL-1A-E4 PS7122AL-2A PS7122AL-2A-E3 PS7122A-2A-A
Contextual Info: Solid State Relay OCMOS FET PS7122A-1A,-2A,PS7122AL-1A,-2A 6, 8-PIN DIP, 250 V BREAK DOWN VOLTAGE 1-ch, 2-ch Optical Coupled MOS FET DESCRIPTION The PS7122A-1A, -2A and PS7122AL-1A, -2A are solid state relays containing GaAs LEDs on the light emitting side input side and MOS FETs on the output side.

PS2732-1

Abstract: ps2732 PS2732-1-F3 PS2732-1-V PS2733-1 PS2733-1-A PS2733-1-F3 PS2733-1-V VDE0884
Contextual Info: PHOTOCOUPLER PS2732-1,PS2733-1 HIGH COLLECTOR TO EMITTER VOLTAGE SOP MULTI PHOTOCOUPLER −NEPOC Series− DESCRIPTION The PS2732-1 and PS2733-1 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon darlington-connected phototransistor.

EN60747-5-2

Abstract: M601 PS2702-1 PS2702-1-F3 PS2702-1-F4 PS2702-1-V VDE0884 ps2702 ps2702-1-f3-a
Contextual Info: PHOTOCOUPLER PS2702-1 HIGH ISOLATION VOLTAGE DARLINGTON TRANSISTOR SOP MULTI PHOTOCOUPLER SERIES −NEPOC Series− DESCRIPTION The PS2702-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon darlingtonconnected phototransistor.

nec 2701

Abstract: 2701 NEC PS2701-1 ic nec 2701 M831 ps2701-1-f3-a EN60747-5-2 PS2701-1-F3 PS2701-1-F4 PS2701-1-V
Contextual Info: PHOTOCOUPLER PS2701-1 HIGH ISOLATION VOLTAGE SOP MULTI PHOTOCOUPLER −NEPOC Series− DESCRIPTION The PS2701-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon phototransistor. This package is SOP Small Outline Package type and has shield effect to cut off ambient light.

ps7200e

Abstract: PS7200E-1A PS7200E-1A-A PS7200E-1A-E3 PS7200E-1A-E3-A 200E PS7200E-1A-E4 PS7200E-1A-F3 PS7200E-1A-F4
Contextual Info: Solid State Relay OCMOS FET PS7200E-1A 4-PIN SOP, 0.8 Ω LOW ON-STATE RESISTANCE −NEPOC 1-ch Optical Coupled MOS FET Series− DESCRIPTION The PS7200E-1A is a low on-state resistance solid state relay containing a GaAs LED on the light emitting side input side and MOS FETs on the output side.