POWERX Search Results

tl2431

Abstract: sp34063 XRP7657 TL243 SP6260 Step-up 12V to 19V 5A XRP7740 SP2525A XRP29302 sp7121
Contextual Info: Power Management Power Conversion Switching Regulators Switching Controllers LDOs & Regulators System Controls Power Switches Voltage References Supervisors LED Lighting Regulators Controllers Current Drivers PowerXR Digital Switching Controllers 2010 www.exar.com

Contextual Info: XRP77XXEVB-XCM XRP77XX Configuration Module October 2013 Rev. 1.3.1 GENERAL DESCRIPTION The XRP77XXEVB-XCM Exar Configuration Module is a board that is designed to assist in the customer in the programming and bringup of PowerXR Digital PWM controllers on a

ci cd 4058

Abstract: bc 7-25 PowerXCell 8i 511000 dram X3800 CBEA Datasheet ci cd 4058 mic 342 opu 54.30 07FFFF
Contextual Info: Title Page PowerXCell 8i Processor Registers Version 1.0 December 8, 2008 Copyright and Disclaimer Copyright International Business Machines Corporation 2008 All Rights Reserved Printed in the United States of America December 2008 IBM, the IBM logo, ibm.com, and PowerXCell are trademarks or registered trademarks of International Business

QFN40

Abstract: QFN-40 7713
Contextual Info: Programmable Solution Power with Digital PWM Buck Controllers Power XR Family of Products XRP7704 / 7708 / 7713 / 7714 / 7740 PowerXR tm Programmable Power System ICs Reduce Development Time, Reduce Costs and are Easily Reconfigured for Real-Time Design Changes

Contextual Info: Programmable Power Technology Quick Start Guide XRP7714EVB-DEMO-2-KIT XRP7714EVB-DEMO-2P-KIT Thank you for your interest in Exar’s PowerXR Programable Power Technology! This kit contains everything you need to become proficient in PowerXR – just supply the

XRP77XX-XCM

Abstract: XRP7714 XRP7740 XRP7713 1GB-x16 TQFN32 TQFN-32 XRP7704 SOC 5A manual monitor adapter 12v 5A
Contextual Info: Programmable Power Technology 2010 www.exar.com Exar’s Power XR Digital Power Solutions Exar’s PowerXR ICs integrate the best of both worlds; the low cost and flexibility of digital power control as well as the robust power capabilities of high performance analog power switches. PowerXR products reduce development time from weeks to

d880

Abstract: transistor d880 d880 datasheet D880 pin out DL-0159 XDR Rambus d880 y sony x35 D870 d880 transistor
Contextual Info: Title Page PowerXCell 8i CMOS SOI 65 nm Hardware Initialization Guide Version 1.2 December 8, 2008 Copyright and Disclaimer Copyright International Business Machines Corporation 2007, 2008 All Rights Reserved Printed in the United States of America December 2008

XRP77XXEVB-XCM

Contextual Info: Programmable Power Technology Quick Start Guide XRP7713EVB-DEMO-1-KIT Thank you for your interest in Exar’s PowerXR Programable Power Technology! This kit contains everything you need to become proficient in PowerXR – just supply the computer & power:

ANP-32

Abstract: XRP77 XRP7713
Contextual Info: P owe r X R ANP-32 Practical Layout Guidelines for PowerXR Designs August 2010 By: Bryan Smith – Senior Field Applications Engineer Kevin Parmenter – Advanced Technical Marketing Director PowerXR GENERAL DESCRIPTION Rev. 1.0.0 LAYOUT GUIDELINES CHECKLIST

3006S

Abstract: 10-6327-01
Contextual Info: N-Channel Dual CoolTM Power Trench SyncFETTM 30 V, 49 A, 1.9 mΩ Features General Description „ Dual CoolTM Top Side Cooling PQFN package „ SyncFET Schottky Body Diode This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench®

FCH76N60

Contextual Info: SupreMOS TM FCH76N60N N-Channel MOSFET 600V, 76A, 36mΩ Features Description o • 650V @TJ = 150 C The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based

fqt1n80

Contextual Info: QFET FQT1N80TF_WS N-Channel MOSFET 800V, 0.2A, 20Ω Features Description • RDS on = 15.5Ω (Typ.)@ VGS = 10V, ID = 0.1A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

FDA20

Abstract: *20N50F
Contextual Info: UniFET TM FDA20N50 / FDA20N50_F109 500V N-Channel MOSFET Features Description • 22A, 500V, RDS on = 0.23Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Contextual Info: FDMA8878 Single N-Channel Power Trench MOSFET 30 V, 9.0 A, 16 mΩ Features General Description „ Max rDS on = 16 mΩ at VGS = 10 V, ID = 9.0 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has

FDPF4N60NZ

Contextual Info: UniFET-IITM FDP4N60NZ / FDPF4N60NZ N-Channel MOSFET 600V, 3.8A, 2.5Ω Features • RDS on = 1.9Ω ( Typ.)@ VGS = 10V, ID = 1.9A Description • Low Gate Charge ( Typ. 8.3nC) These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar

Contextual Info: FAN7093_F085 High Current PN Half Bridge December 2011 FAN7093_F085 High Current PN Half Bridge Rectifier 47 A, Max path resistance 30.5 mΩ at 150 °C 2011 Fairchild Semiconductor Corporation FAN7093_F085 Rev. C1 1 www.fairchildsemi.com FAN7093_F085 High Current PN Half Bridge

Contextual Info: REV. 1.1 FS6611-DS-11_EN Datasheet FS6611 Energy Metering IC with Impulse Output SEP 2006 FS6611 Fortune Semiconductor Corporation 富晶電子股份有限公司 28F., No.27, Sec. 2, Zhongzheng E. Rd., Danshui Town, Taipei County 251, Taiwan Tel.：886-2-28094742

Contextual Info: DB3-DB3TG 350mW Bi-directional Trigger Diodes Features • • • • • • • • • • VBO : 32V Version Low break-over current DO-35 package JEDEC Hermetically sealed glass Compression bonded construction All external surfaces are corrosion resistant and

Contextual Info: FGA20S125P Shorted AnodeTM IGBT Features General Description • High speed switching Using advanced Field Stop Trench and Shorted Anode technology, Fairchild’s Shorted AnodeTM Trench IGBTs offer superior conduction and switching performances, and easy parallel operation with exceptional avalanche capability. This device is

Contextual Info: FDB070AN06A0 / FDP070AN06A0 N-Channel PowerTrench MOSFET 60V, 80A, 7mΩ Features Applications • r DS ON = 6.1mΩ (Typ.), V GS = 10V, ID = 80A • Motor Load Control • Qg(tot) = 51nC (Typ.), VGS = 10V • DC-DC converters and Off-line UPS • Low Miller Charge

Contextual Info: GBPC 12, 15, 25, 35 SERIES Bridge Rectifiers Glass Passivated Features • • • • Integrally molded heatsink provided very low thermal resistance for maximum heat dissipation. Surge Overload Ratings from 300 amperes to 400 amperes. Isolated voltage from case to lead over 2500 volts.

Contextual Info: XRP9710 and XRP9711 Dual 6A Programmable Power Module Rev. 1.0.1 January 2014 GENERAL DESCRIPTION FEATURES The XRP9710 and XRP9711 are programmable step down power modules providing two 6A outputs. The module package contains the switching controller, power

XRP7740

Abstract: XRP-7740 Digital Proportional Controller
Contextual Info: Product Number: XRP7740EVB Evaluation Board for XRP-7740 - Programmable Power System ICs Reduce Development Time, Cost and are Easily Reconfigured for Real-time Design Changes Exar has released the XRP7740, a 5Amp/channel regulator. These power ICs integrate the best of both worlds - the low cost and flexibility of digital power

Contextual Info: FDPF035N06B N-Channel PowerTrench MOSFET 60 V, 88 A, 3.5 mΩ Features Description • RDS on = 2.91 mΩ ( Typ.) @ VGS = 10 V, ID = 88 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining