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    RFM10N Search Results

    RFM10N Datasheets (31)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    RFM10N12
    		Intersil 10.0A, 120V and 150V, 0.300 ?, N-Channel Power MOSFET FN1445.2 Original PDF 41.32KB 5
    RFM10N12
    		General Electric N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 120V. Drain current RMS continuous 10A. Scan PDF 217.48KB 4
    RFM10N12
    		General Electric (RFM10N12/15 / RFM10P12/15) N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS Scan PDF 249.34KB 4
    RFM10N12
    		Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF 232.38KB 4
    RFM10N12
    		International Rectifier RF and BUZ Series Power MOSFETs - N-Channel Scan PDF 40.6KB 1
    RFM10N12
    		Unknown Shortform Datasheet & Cross References Data Short Form PDF 83.29KB 1
    RFM10N12
    		Unknown Semiconductor Master Cross Reference Guide Scan PDF 123.51KB 1
    RFM10N12
    		Unknown Semiconductor Master Cross Reference Guide Scan PDF 120.51KB 1
    RFM10N12L
    		General Electric N-channel logic level power field-effect transistor (LL FET). 120V, 10A. Scan PDF 227.63KB 4
    RFM10N12L
    		Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF 244.75KB 4
    RFM10N12L
    		Unknown Shortform Datasheet & Cross References Data Short Form PDF 83.29KB 1
    RFM10N15
    		Intersil 10.0A, 120V and 150V, 0.300 ?, N-Channel Power MOSFET FN1445.2 Original PDF 41.32KB 5
    RFM10N15
    		General Electric (RFM10N12/15 / RFM10P12/15) N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS Scan PDF 249.34KB 4
    RFM10N15
    		General Electric N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Drain current RMS continuous 10A. Scan PDF 217.48KB 4
    RFM10N15
    		Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF 232.38KB 4
    RFM10N15
    		International Rectifier RF and BUZ Series Power MOSFETs - N-Channel Scan PDF 40.6KB 1
    RFM10N15
    		Intersil Obsolete Product Datasheet Scan PDF 279.03KB 5
    RFM10N15
    		Unknown Shortform Datasheet & Cross References Data Short Form PDF 83.29KB 1
    RFM10N15
    		Unknown Semiconductor Master Cross Reference Guide Scan PDF 123.51KB 1
    RFM10N15L
    		General Electric N-channel logic level power field-effect transistor (LL FET). 150V, 10A. Scan PDF 227.63KB 4
    SF Impression Pixel

    RFM10N Price and Stock

    Harris Semiconductor

    Harris Semiconductor RFM10N15L

    10A, 150V, 0.3ohm, N-Channel, POWER MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics RFM10N15L 109 1
    • 1 -
    • 10 -
    • 100 $2.04
    • 1000 $1.83
    • 10000 $1.72
    		Buy Now

    Harris Semiconductor RFM10N45

    10A, 450V, 0.6ohm, N-Channel, POWER MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics RFM10N45 50 1
    • 1 -
    • 10 -
    • 100 $3.89
    • 1000 $3.48
    • 10000 $3.27
    		Buy Now

    RFM10N Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    dv4 mosfets

    Abstract: C12 IC GATE CA3240E DEPLETION MOSFET Harris Semiconductor jfet mos die mosfet cross reference n channel depletion MOSFET 2N4036 AN7254
    Contextual Info: Harris Semiconductor No. AN7254.2 Harris Power MOSFETs April 1994 Switching Waveforms Of The L2FET: A 5 Volt Gate-Drive Power MOSFET Author: C. Frank Wheatley, Jr. and Harold R. Ronan, Jr. gate sensitivity, as shown in Figures 1, 2, and 3, which are comparisons of the industry standard RFM10N15 with its


    Original     		AN7254 RFM10N15 RFM10N15L. dv4 mosfets C12 IC GATE CA3240E DEPLETION MOSFET Harris Semiconductor jfet mos die mosfet cross reference n channel depletion MOSFET 2N4036 PDF

    F10N12L

    Abstract: F10N15L 10N15L F10N12 RFP10N15L F10N15 RFP10N12L 10n15 RFM10N12L RFM10N15L
    Contextual Info: Logic-Level Power MOSFETs_ RFM10N12L, RFM10N15L, RFP10N12L, RFP10N15L File N u m be r 1559 Power Logic Level MOSFETs N-Channel Logic Level Power Field-Effect Transistors L2 FET TERMINAL DIAGRAM 10 A, 120 V — 150 V rDsioni: 0.3 f)


    OCR Scan     		RFM10N12L, RFM10N15L, RFP10N12L, RFP10N15L 92CS-3374I RFM10N12L RFM10N15L RFP10N12L RFP10N15L* F10N12L F10N15L 10N15L F10N12 RFP10N15L F10N15 10n15 PDF

    M339

    Abstract: RFP10N15 transistor m339 ta9192 RFP10N12 RFM10N12 RFM10N15
    Contextual Info: □1 DE I 3fl7SDfll DDlflim S | ~ 3875081 G E SOLID STATE 0 1E 18141 D T -3 9 ’] / Standard Power MOSFETs_ RFM10N12, RFM10N15, RFP10N12, RFP10N15 File Num ber 1445 N-Channel Enhancement-Mode Power Field-Effect Transistors 10 A, 120 V — 150 V ros on : 0.3 fi


    OCR Scan     		3fl75Dfll RFM10N12, RFM10N15, RFP10N12, RFP10N15 RFM10N12 RFM10N15 RFP10N12 RFP10N15* switchin5081" M339 transistor m339 ta9192 PDF

    CS3705

    Abstract: RFM10n50 RFM10N45
    Contextual Info: Standard Power M O S F E T s - RFM10N45, RFM10N50 File Number 1788 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors 10 A, 450 V - 500 V 0.6 1 N-CHANNEL ENHANCEMENT MODE fD S lo n *


    OCR Scan     		RFM10N45, RFM10N50 RFM10N45 RFM10N50* 92CS-5706I AN-7254 AN-7260. 92CS-37062 J2CS-37063 92CS-37376 CS3705 RFM10n50 PDF

    TA17435

    Abstract: RFM10n50 AN7254 AN7260 RFM10N45
    Contextual Info: RFM10N45, RFM10N50 Semiconductor 10A, 450V and 500V, 0.600 O hm , N-Channel Power M O SFETs September 1998 Features Description • 10A, 450V and 500V These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such


    OCR Scan     		RFM10N45, RFM10N50 RFM10N45 T0-204AA RFM10N45 RFM10N50 TA17435. 50BVnSS AN7254 TA17435 AN7260 PDF

    RFM10N50

    Abstract: AN7254 AN7260 RFM10N45 TA17435
    Contextual Info: [ /Title RFM10 N45, RFM10 N50 /Subject (10A, 450V and 500V, 0.600 Ohm, NChannel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, NChannel Power MOSFETs, TO204AA) /Creator () /DOCIN FO pdfmark RFM10N45, RFM10N50 Semiconductor 10A, 450V and 500V, 0.600 Ohm,


    Original     		RFM10 O204AA) RFM10N45, RFM10N50 AN7254 AN7260. RFM10N50 AN7260 RFM10N45 TA17435 PDF

    F10N15L

    Abstract: F10N12L RCA SOLID STATE F10N12L F10N12 RFM10N15L F10N15 RFP10N15L RFM10N12L RFP10N12L TA9530
    Contextual Info: 387 5081 G E SOLID STATE 01 DE | 3A75Dfil Q01fll4M4 1 1 T'37 Logic-Level Power MOSFETs _ :_ RFM10N12L, RFM10N15L, RFP10N12L, RFP10N15L F ile N u m b e r 1559 Power Logic Level MOSFETs N-Channel Logic Level


    OCR Scan     		3fl75Dfil RFM10N12L, RFM10N15L, RFP10N12L, RFP10N15L RFM10N12L RFM10N15L RFP10N12L RFP10N15L* F10N15L F10N12L RCA SOLID STATE F10N12L F10N12 F10N15 TA9530 PDF

    TB334

    Abstract: RFP10N12 AN7254 RFM10N12 RFM10N15 RFP10N15 TB-334
    Contextual Info: R M S RFM10N12, RFM10N15, RFP10N12, RFP10N15 Semiconductor October 1998 Data Sheet File Number 1445.2 Features 10A, 120V and 150V, 0.300 Ohm, N-Channel Power MOSFETs • 10A, 120V and 150V These are N-channel enhancement-mode silicon-gate power field effect transistors designed for applications such


    OCR Scan     		RFM10N12, RFM10N15, RFP10N12, RFP10N15 TA09192. RFM10N12 T0-204AA RFM10N12 RFM10N15 TB334 RFP10N12 AN7254 RFP10N15 TB-334 PDF

    10N45

    Abstract: 10n50
    Contextual Info: RFM10N45 RFM10N50 2 H a r r is N-Channel Enhancement Mode Power Field Effect Transistors August 1991 Features Packages T 0 -2 0 4 A A BOTTOM VIEW • 10A, 4 5 0 V and 5 0 0V • rDS on) = ° - 6 ^ • S O A is P ow er-D issip atio n Limited • N anosecond Switching S peeds


    OCR Scan     		RFM10N45 RFM10N50 92CS-S7063 10N45 10n50 PDF

    10N15

    Abstract: 10N12 rfm10n rfp10n12
    Contextual Info: 2 HARRIS RFM10N12/10N15 RFP10N12/10N15 N-Channel Enhancement Mode Power Field Effect Transistors ugust 1991 Features Packages T0-204AA • 10A, 120V and 150V T0 2 • rDS on = 0.3ft • SOA is Power-Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics


    OCR Scan     		RFM10N12/10N15 RFP10N12/10N15 T0-204AA RFM10N12 RFM10N15 RFP10N12 RFP10N15 AN-7254 AN-7260 10N15 10N12 rfm10n PDF

    ta9192

    Abstract: RFP10N12 RFM10N12 RFM10N15 RFP10N15
    Contextual Info: RFM10N12, RFM10N15, RFP10N12, RFP10N15 File Num ber N-Channel Enhancement-Mode Power Field-Effect Transistors 10 A, 120 V — 150 V ros on : 0.3 fi 1445 Features: co-V-'hI T j O • S O A is pow er-dissipation lim ited ■ N an o seco n d sw itch in g sp e e d s


    OCR Scan     		RFM10N12, RFM10N15, RFP10N12, RFP10N15 RFM10N12 RFM10N15 RFP10N12 RFP10N15* ta9192 RFP10N15 PDF

    10n12

    Abstract: 92CS-3780I ta9192 RFM10N15 RFM1 RFP mosfets ta9212 A9212 RFM10N12 RFP10N12
    Contextual Info: Standard Power M OSFETs- -— -——- RFM10N12, RFM10N15, RFP I0N1I2, RFP10N15 N-Channel Enhancement-Mod Power Field-Effect Transistors — - File Number 1445 % 10 A, 120 V — 150 V


    OCR Scan     		RFM10N12, RFM10N15, RFP10N15 RFM10N12 RFM10N15 RFP10N12 RFP10N15* RFP10M12, 10n12 92CS-3780I ta9192 RFM1 RFP mosfets ta9212 A9212 PDF

    rfm10n50

    Contextual Info: W vys S RFM10N45, RFM10N50 Semiconductor y 10A, 450V and 500V, 0.600 Ohm, N-Channel Power MOSFETs September 1998 Features Description • 10A, 450V and 500V These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such


    OCR Scan     		RFM10N45, RFM10N50 RFM10N45 O-204AA TA17435. 50BVpgs 0-25B rfm10n50 PDF

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


    Original     		2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B PDF

    buz11

    Abstract: BUZ31 THOMSON DISTRIBUTOR 58e d RFK30N12 THOMSON 58E THOMSON DISTRIBUTOR BUZ71 BUZ71A RFH12N RFK45N05
    Contextual Info: THOnSON/ DISTRIBUTOR 5flE D • ^05^873 □□□57D3 5fl3 Wt TCSK P o w er M O S FE T s RF and B U Z -S e rie s P ow er M O S FE Ts — N -C h a n n e l Package Maximum Ratings BV q s S V id s (A) r DS(ON) OHMS 50 2 4 13 14 15 25 25 30 45 0.75 0.60 0.12


    OCR Scan     		T0-204 O-205 O-218 O-220 RFM15N05 RFM25N05 RFK45N05 RFL2N05 RFH45N05 RFP4N05 buz11 BUZ31 THOMSON DISTRIBUTOR 58e d RFK30N12 THOMSON 58E THOMSON DISTRIBUTOR BUZ71 BUZ71A RFH12N PDF

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


    OCR Scan     		PDF

    IRF722P

    Abstract: IRF732P SGSP3055 IRF730P 1rfp450 IRF510 SGSP312 IRF540FI irf522p MTP20N10
    Contextual Info: CROSS REFERENCE SGS-THOMSON NEAREST PAGE INDUSTRY STANDARD SGS-THOMSON 2SK295 2SK296 2SK308 2SK310 2SK311 SGSP351 IRF723 IRF142 IRF722 IRF833 499 307 261 307 331 BUZ11A BUZ11FI BUZ11P BUZ11S2 BUZ11S2FI BUZ11A BUZ11FI BUZ11FI BUZ11S2 BUZ11S2FI 2SK312 2SK313


    OCR Scan     		2SK295 2SK296 2SK308 2SK310 2SK311 2SK312 2SK313 2SK319 2SK320 2SK324 IRF722P IRF732P SGSP3055 IRF730P 1rfp450 IRF510 SGSP312 IRF540FI irf522p MTP20N10 PDF

    10N15L

    Abstract: P10N15L RFP10N12L
    Contextual Info: R F M 1 0 N 1 2 L /1 5 L R F P 1 0 N 1 2 L /1 5 L gì h a r r is N - C h a n n e l L o g ic Level P o w e r F ie l d - E f f e c t T r a n s is to r s L 2 F ET August 1991 Package F e a tu re s T O -2 0 4 A A • 10A, 120V and 150V BOTTOM VIEW • rDS(0N) = 0 .3 fl


    OCR Scan     		FP10N12L AN7254 AN-7260. 92CS-3BI64 10N15L P10N15L RFP10N12L PDF

    4311 mosfet transistor

    Abstract: D 4206 TRANSISTOR transistor D 322 Power MOSFETs D 843 Transistor Transistor irf230 h a 431 transistor MOSFET IRF460 n-channel 4336 742r
    Contextual Info: - POWER MOSFETs 4 N-CHANNEL POWER MOSFETs PAGE 2N6755, 2N6756 N-Channel Enhancement-Mode Power Field-Effect Transistors. 2N6757, 2N6758 N-Channel Enhancement-Mode Power Field-Effect Transistors. 4-11 2N6759, 2N6760


    OCR Scan     		2N6755, 2N6756 2N6757, 2N6758 2N6759, 2N6760 2N6761, 2N6762 2N6763, 2N6764 4311 mosfet transistor D 4206 TRANSISTOR transistor D 322 Power MOSFETs D 843 Transistor Transistor irf230 h a 431 transistor MOSFET IRF460 n-channel 4336 742r PDF

    field-effect transistors

    Abstract: 05LSM RFP8N18L RFP25N06L transistors 2N6904 field-effect transistor RFP14N05L M 615 transistor transistor 684
    Contextual Info: _ POWER MOSFETs 6 L O G IC L E V E L P O W E R M O S F E T s PAGE 2N6901 N-Channel Logic Level Power MOS Field-Effect Transistor L2F E T . 6-3 2N6902 N-Channel Logic Level Power MOS Field-Effect Transistor (L2F E T ) .


    OCR Scan     		2N6901 2N6902 2N6903 2N6904 RFL1N08L, RFL1N10L RFL1N12L, RFL1N15L RFL1N18L, RFL1N20L field-effect transistors 05LSM RFP8N18L RFP25N06L transistors field-effect transistor RFP14N05L M 615 transistor transistor 684 PDF

    TP8N10

    Abstract: th15n20 TH7N50 TP4N10 TP10N05 IRFP350FI TP5N35 tp5n40 TP4N45 TP3N40
    Contextual Info: CROSS REFERENCE INDUSTRY STANDARD SGS-THOMSON NEAREST PAGE INDUSTRY STANDARD SGS-THOMSON 2SK295 2SK296 2SK308 2SK310 2SK311 SGSP351 IRF723 IRF142 IRF722 IRF833 499 307 261 307 331 BUZ11A BUZ11FI BUZ11P BUZ11S2 BUZ11S2FI BUZ11A BUZ11FI BUZ11FI BUZ11S2 BUZ11S2FI


    OCR Scan     		2SK295 2SK296 2SK308 2SK310 2SK311 2SK312 2SK313 2SK319 2SK320 2SK324 TP8N10 th15n20 TH7N50 TP4N10 TP10N05 IRFP350FI TP5N35 tp5n40 TP4N45 TP3N40 PDF

    MTM13N50E

    Abstract: P40N10 24N40 p50n05 8n50e Power MOSFET Cross Reference Guide motorola 20n50e TP50N05E IRF510 mosfet irf640 33N10E
    Contextual Info: ir tmos Cross-Reference The follow ing table represents a cro ss-re fe re n ce guide for all T M O S P ow er M O SFETs w hich are m an ufacture d directly by M otorola. W here the M otorola part nu m be r differs from the Industry part num ber, the M otorola de vice is a “form , fit and fu n ctio n ”


    OCR Scan     		BUZ10 BUZ11 BUZ11A BUZ11S2 BUZ15 BUZ171 BUZ20 BUZ21 BUZ23 BUZ31 MTM13N50E P40N10 24N40 p50n05 8n50e Power MOSFET Cross Reference Guide motorola 20n50e TP50N05E IRF510 mosfet irf640 33N10E PDF

    AN-7501

    Abstract: CA3240E dv4 mosfets CA3280 RFM10N15 RFM10N15L RFM15N15 2N4036 P-channel 200V mos fet ca3240
    Contextual Info: Switching Waveforms Of The L2FET: A 5 Volt Gate-Drive Power MOSFET Application Note eyrds terrpoon er ) OCI O frk geode setes VG = 9(4.5)V DRAIN CURRENT (ID) (A) bt witc g vems The FET 5 lt teve wer OST) utho The reduction in gate drive voltage is the result of halving the


    Original     		100nm AN-7501 CA3240E dv4 mosfets CA3280 RFM10N15 RFM10N15L RFM15N15 2N4036 P-channel 200V mos fet ca3240 PDF

    POWER MOSFET APPLICATION NOTE

    Abstract: RFM10N15 2N4036 AN7254 CA3240E CA3280 RFM10N15L RFM15N15 vertical JFET high power pulse generator with mosfet
    Contextual Info: Switching Waveforms Of The L2FET: A 5 Volt Gate-Drive Power MOSFET Application Note VG = 9 4.5 V VG = 5(2.5)V 6 4 VG = 4(2)V 2 The apparent conclusion from a study of the switching waveforms of the new device that halving the gate oxide thickness would double the gate capacitance and halve the switching


    Original     		100nm POWER MOSFET APPLICATION NOTE RFM10N15 2N4036 AN7254 CA3240E CA3280 RFM10N15L RFM15N15 vertical JFET high power pulse generator with mosfet PDF