SIR872ADP Search Results
SIR872ADP Price and Stock
Vishay Siliconix SIR872ADP-T1-GE3MOSFET N-CH 150V 53.7A PPAK SO-8 |
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SIR872ADP-T1-GE3 | Cut Tape | 3,548 | 1 |
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SIR872ADP-T1-GE3 | 3,000 | 1 |
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Vishay Siliconix SIR872ADP-T1-RE3MOSFET N-CH 150V 53.7A PPAK SO-8 |
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SIR872ADP-T1-RE3 | Reel | 3,000 |
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SIR872ADP-T1-RE3 | 12,000 | 1 |
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Vishay Intertechnologies SIR872ADP-T1-GE3Trans MOSFET N-CH 150V 12.8A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIR872ADP-T1-GE3) |
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SIR872ADP-T1-GE3 | Reel | 28 Weeks | 3,000 |
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SIR872ADP-T1-GE3 |
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SIR872ADP-T1-GE3 | Reel | 3,000 |
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SIR872ADP-T1-GE3 | Reel | 6,000 | 3,000 |
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SIR872ADP-T1-GE3 | 29 Weeks | 3,000 |
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Vishay Intertechnologies SIR872ADP-T1-RE3N-CHANNEL 150-V (D-S) MOSFET - Tape and Reel (Alt: SIR872ADP-T1-RE3) |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SIR872ADP-T1-RE3 | Reel | 28 Weeks | 3,000 |
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SIR872ADP-T1-RE3 | 1,821 |
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SIR872ADP-T1-RE3 | Cut Tape | 2,731 | 1 |
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SIR872ADP-T1-RE3 | 2,765 |
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SIR872ADP-T1-RE3 | 2,400 |
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SIR872ADP-T1-RE3 | Reel | 3,000 |
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SIR872ADP-T1-RE3 | 3,000 |
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SIR872ADP-T1-RE3 | 29 Weeks | 3,000 |
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SIR872ADP-T1-RE3 | 15,000 | 3,000 |
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Vishay BLH SIR872ADP-T1-RE3 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SIR872ADP-T1-RE3 | 3,000 | 2 |
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SIR872ADP Datasheets (2)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | PDF Size | Page count | |
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SIR872ADP-T1-GE3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 150V 53.7A PPAK SO-8 | Original | 9 | ||||
SIR872ADP-T1-RE3 | Vishay Siliconix | MOSFET N-CH 150V 53.7A PPAK SO-8 | Original | 319.22KB | 13 |
SIR872ADP Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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375id
Abstract: SiR872ADP mosfet 3079
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SiR872ADP SiR872ADP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 375id mosfet 3079 | |
Contextual Info: SiR872ADP Vishay Siliconix N-Channel 150 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)g 0.0180 at VGS = 10 V 53.7 0.0230 at VGS = 7.5 V 45 VDS (V) 150 Qg (Typ.) 22.8 nC • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Material categorization: |
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SiR872ADP SiR872ADP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: SiR872ADP Vishay Siliconix N-Channel 150 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)g 0.0180 at VGS = 10 V 53.7 0.0230 at VGS = 7.5 V 45 VDS (V) 150 Qg (Typ.) 22.8 nC • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Material categorization: |
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SiR872ADP SiR872ADP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: Vishay Intertechnology, Inc. Alternative Energy Solar One of the World’s Largest Manufacturers of www.vishay.com Discrete Semiconductors and Passive Components Alternative Energy 太陽光発電 Mメインインバータ < 50 kW 4 マイクロインバータ 5 |
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VMN-MS6792-1304-AESO | |
so8 footprint
Abstract: SIR876 si7454 si409 SiR872ADP sir878 SiS890DN si7252 si419
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SC-70 SC-75 Si7252DP VMN-PT0261-1209 so8 footprint SIR876 si7454 si409 SiR872ADP sir878 SiS890DN si7252 si419 | |
MKP1848S
Abstract: MKP1848S DC-Link
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VMN-MS6761-1212 MKP1848S MKP1848S DC-Link |