SI7252 Search Results
SI7252 Datasheets (2)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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SI7252ADP-T1-GE3 | Vishay Siliconix | DUAL N-CHANNEL 100-V (D-S) MOSFE | Original | 210.06KB | |||
SI7252DP-T1-GE3 | Vishay Siliconix | FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 100V 36.7A 8SOIC | Original | 9 |
SI7252 Price and Stock
Vishay Siliconix SI7252DP-T1-GE3MOSFET 2N-CH 100V 36.7A PPAK SO8 |
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SI7252DP-T1-GE3 | Cut Tape | 29,762 | 1 |
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SI7252DP-T1-GE3 | 36,000 | 1 |
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Vishay Siliconix SI7252ADP-T1-GE3MOSFET 2N-CH 100V 9.3A PPAK SO8 |
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SI7252ADP-T1-GE3 | Cut Tape | 7,035 | 1 |
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SI7252ADP-T1-GE3 | 188 |
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Vishay Intertechnologies SI7252ADP-T1-GE3DUAL N-CHANNEL 100-V (D-S) MOSFET - Tape and Reel (Alt: SI7252ADP-T1-GE3) |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI7252ADP-T1-GE3 | Reel | 6,000 | 24 Weeks | 3,000 |
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SI7252ADP-T1-GE3 | 43,419 |
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SI7252ADP-T1-GE3 | Cut Tape | 7,842 | 1 |
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SI7252ADP-T1-GE3 | Reel | 33,000 | 3,000 |
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SI7252ADP-T1-GE3 | 11,700 |
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SI7252ADP-T1-GE3 | 9,000 | 26 Weeks | 6,000 |
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SI7252ADP-T1-GE3 | 25 Weeks | 3,000 |
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SI7252ADP-T1-GE3 | 12,200 |
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SI7252ADP-T1-GE3 | 9,000 | 1 |
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Vishay Intertechnologies SI7252DP-T1-GE3DUAL N-CHANNEL 100-V (D-S) MOSFET - Tape and Reel (Alt: SI7252DP-T1-GE3) |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI7252DP-T1-GE3 | Reel | 3,000 | 29 Weeks | 3,000 |
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SI7252DP-T1-GE3 | 46,101 |
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SI7252DP-T1-GE3 | Cut Tape | 3,460 | 1 |
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SI7252DP-T1-GE3 | Reel | 30,000 | 3,000 |
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SI7252DP-T1-GE3 | 19 |
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SI7252DP-T1-GE3 | 31 Weeks | 3,000 |
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SI7252DP-T1-GE3 | 30 Weeks | 3,000 |
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SI7252DP-T1-GE3 | 12,346 |
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Vishay Huntington SI7252DP-T1-GE3 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI7252DP-T1-GE3 | 1 |
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SI7252DP-T1-GE3 | 8,800 |
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SI7252 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: SPICE Device Model Si7252DP www.vishay.com Vishay Siliconix Dual N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the -55 °C |
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Si7252DP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
SI7252DP
Abstract: si7252 185NC
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Si7252DP Si7252DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 si7252 185NC | |
Contextual Info: New Product Si7252DP Vishay Siliconix Dual N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) () Max. ID (A) 0.017 at VGS = 10 V 36.7 0.018 at VGS = 7.5 V 35.7 0.020 at VGS = 6 V 33.9 a • TrenchFET Power MOSFET • 100 % Rg and UIS Tested |
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Si7252DP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: New Product Si7252DP Vishay Siliconix Dual N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) () Max. ID (A) 0.017 at VGS = 10 V 36.7 0.018 at VGS = 7.5 V 35.7 0.020 at VGS = 6 V 33.9 a • TrenchFET Power MOSFET • 100 % Rg and UIS Tested |
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Si7252DP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
so8 footprint
Abstract: SIR876 si7454 si409 SiR872ADP sir878 SiS890DN si7252 si419
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SC-70 SC-75 Si7252DP VMN-PT0261-1209 so8 footprint SIR876 si7454 si409 SiR872ADP sir878 SiS890DN si7252 si419 | |
Contextual Info: V i s h ay I n t e r t e c h n o l o g y, I n c . Power MOSFETs MOSFETs - On-Resistance Ratings Down to VGS = 4.5 V 80 V to 150 V High-Performance 80 V to 150 V Power MOSFETs Key Benefits • New next-generation technology provides very low on-resistance and ultra-low figure of merit |
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SC-75 SiB456DK Si7252DP SiS990DN Si4590DY 1212-8S VMN-PT0261-1402 | |
N-Channel MOSFETsContextual Info: Vishay Intertechnology, Inc. LOW AND MEDIUM VOLTAGE N-CHANNEL MOSFET s TrenchFET GEN IV High-Performance MOSFETs from 30 V to 60 V ThunderFET® High-Performance MOSFETs from 80 V to 200 V PowerPAK® SC-70 PowerPAK SC-75 High-Performance MOSFETs from 60 V to 150 V in |
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SC-70 SC-75 1212-8S VMN-MS6926-1406 N-Channel MOSFETs |