SMD TRANSISTOR 015 G Search Results

857 TRANSISTOR smd

Abstract: TRANSISTOR SMD typ 056 smd transistor 857 data HFE9
Contextual Info: SFT4300S.22 SFT4300S.22L Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com 2 A, 150 Volts general purpose NPN Transistor DESIGNER’S DATA SHEET SMD.22

Contextual Info: SFT4300S.22 SFT4300S.22L Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com 2 A, 150 Volts general purpose NPN Transistor DESIGNER’S DATA SHEET SMD.22

LM376

Abstract: LM305H LM305 LM105H/883 lm376 datasheet positive voltage regulator lm305ah smd linear regulator 7755 LM205 lm305ah
Contextual Info: LM105 LM205 LM305 LM305A LM376 Voltage Regulators General Description The LM105 series are positive voltage regulators similar to the LM100 except that an extra gain stage has been added for improved regulation A redesign of the biasing circuitry removes any minimum load current requirement and at the

TRANSFORMER ERL35

Abstract: 230v to 12v step down transformer smd transistor w17 ERL35 w12 smd transistor W17 SMD transistor atx power supply schematic dc 600 watts SOT W17 SMD transistor smd transistor w12 230v to 12v ac step down transformer
Contextual Info: PM30006-01 ATX 300W 115Vac/230Vac 80PLUS SMPS ICs: SG6931, SG6516, SG6858 Contents A. General Spec…………………………P2 B. Schematic…………………………….P3 C. PCB layout……………………………P5 D. BOM………………………………….P7

230v to 12v step down transformer

Abstract: 230v to 12v ac step down transformer TRANSFORMER ERL35 230v to 12v step down transformer ic number 230v to 12v step down transformer circuit ERL35 W17 SMD transistor smps 230V smd transistor w17 1N4148 SMD LL-34
Contextual Info: PM30006-02 ATX 300W 230V 80PLUS SMPS ICs: SG6931, SG6516, SG6858 Contents A. General Spec…………………………P2 B. Schematic…………………………….P3 C. PCB layout……………………………P5 D. BOM………………………………….P7

PTF082001E

Abstract: atc 1725 LM7805 smd smd transistor infineon 106T BCP56 PTF082001F 106T capacitor
Contextual Info: PTF082001E PTF082001F Thermally-Enhanced High Power RF LDMOS FETs 200 W, 860 – 900 MHz Description The PTF082001E and PTF082001F are 200-watt, internally-matched GOLDMOS FETs intended for CDMA and CDMA 2000 applications in the 860 to 900 MHz band. Thermally-enhanced packaging provides the coolest

LM7805 smd

Abstract: BCP56 LM7805 PTF081301E PTF081301F transistor SMD LOA DD 127 D TRANSISTOR
Contextual Info: PTF081301E PTF081301F Thermally-Enhanced High Power RF LDMOS FETs 130 W, 869 – 960 MHz Description The PTF081301E and PTF081301F are 130-watt, internally-matched GOLDMOS FETs intended for EDGE and CDMA applications in the 869 to 960 MHz bands. Thermally-enhanced packaging provides the coolest

LM7805 smd

Abstract: LM7805 smd 8 pin marking us capacitor pf l1 smd marking f2 TRANSISTOR circuit of lm7805 transistor smd marking ND BCP56 LM7805 PTF080451 PTF080451E
Contextual Info: PTF080451 LDMOS RF Power Field Effect Transistor 45 W, 869–960 MHz Description Features The PTF080451 is a 45 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability.

rogers

Contextual Info: PTF210451 LDMOS RF Power Field Effect Transistor 45 W, 2110–2170 MHz Description Features The PTF210451 is a 45 W internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability.

210451

Abstract: smd marking f2 smd transistor marking l6 BDS31314 PTF210451 PTF210451E
Contextual Info: PTF210451 LDMOS RF Power Field Effect Transistor 45 W, 2110–2170 MHz Description Features The PTF210451 is a 45 W internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability.

100-16L

Abstract: smd transistor 2d NPN Transistor isolated T0-220
Contextual Info: 1.25A High Efficiency Switching Regulator Features Description The CS-3972 is a 1.25A, 60V, cur­ rent mode, high efficiency, switch­ ing regulator circuit. It can be con­ figured in buck, boost, forward, isolated and non-isolated topolo­ gies, using a single-ended switch.

Contextual Info: SI EMENS TLE 4271 5-V Low-Drop Fixed Voltage Regulator Features • • • • • • • • • • Output voltage tolerance < ± 2% Low-drop voltage Integrated overtemperature protection Reverse polarity protection Input voltage up to 42 V Overvoltage protection up to 65 V < 400 ms

LM7805

Abstract: LM7805 smd 8 pin PTF080901 PTF080901E marking us capacitor pf l1 philips smd 1206 resistor SMD 1206 RESISTOR 100 OHMS smd marking f2 smd marking l5 transistor smd marking ND
Contextual Info: PTF080901 LDMOS RF Power Field Effect Transistor 90 W, 869–960 MHz Description Features The PTF080901 is a 90 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability.

Contextual Info: PTF180301E PTF180301F Thermally-Enhanced High Power RF LDMOS FETs 30 Watt, 1805 – 1880 MHz, 1930 – 1990 MHz Description The PTF180301E and PTF180301F are 30-watt, internally-matched GOLDMOS FETs intended for GSM EDGE and CDMA applications in the DCS/PCS band. Thermally-enhanced packaging provides the coolest

Contextual Info: 1.25A High Efficiency Switching Regulator Description The CS-3972 is a 1.25A, 60V, cur­ rent mode, high efficiency, switch­ ing regulator circuit. It can be con­ figured in buck, boost, forward, isolated and non-isolated topolo­ gies, using a single-ended switch.

P220E

Abstract: infineon smd package
Contextual Info: PTF180901E PTF180901F Thermally-Enhanced High Power RF LDMOS FETs 90 W, 1805 – 1880 MHz, 1930 – 1990 MHz Description The PTF180901E and PTF180901F are thermally-enhanced, internallymatched 90-watt GOLDMOS FETs intended for EDGE applications in the DCS/PCS bands. Thermally-enhanced packaging provides the coolest

Contextual Info: PTF180901 High Power RF LDMOS FET 90 W, 1805–1880 MHz, 1930–1990 MHz Description Features The PTF180901 is a 90 W, internally matched GOLDMOS FET intended for EDGE applications in the DCS/PCS bands. Full gold metallization ensures excellent device lifetime and reliability.

qml-38534

Abstract: NORTHROP GRUMMAN SYSTEMS CORPORATION NGCP3580
Contextual Info: March 15, 2010 Radiation Performance Data Package MUX8531-S MUX8531-S DSCC SMD Part Number: 5962-0923002KXC 16 channel analog multiplexer, high impedance analog input, Kelvin measurement configuration with ESD protection Prepared by: Aeroflex Plainview, Inc.

military mcm 1553

Abstract: Defense Electronics Supply Center NGCP3580 qml-38534 6 pin TRANSISTOR SMD CODE PA NORTHROP GRUMMAN SYSTEMS CORPORATION smd TRANSISTOR NY Northrop Grumman Electronic Systems
Contextual Info: March 15, 2010 Radiation Performance Data Package MUX8530-S MUX8530-S DSCC SMD Part Number: 5962-0923001KXC 16 channel analog multiplexer, high impedance analog input, single output with ESD protection Prepared by: Aeroflex Plainview, Inc. 35 South Service Road

smd transistor marking l6

Abstract: TRANSISTOR SMD 2X K PCC103BCT marking us capacitor pf l1 smd marking f2 PTF180601 PTF180601C PTF180601E 32 z 45 SMD TRANSISTOR MARKING l4
Contextual Info: PTF180601 LDMOS Field Effect Transistor 60 W, DCS/PCS Band 1805–1880 MHz, 1930–1990 MHz Description Features The PTF180601 is a 60 W, internally matched GOLDMOS FET intended for EDGE applications in the DCS/PCS Band. Full gold metallization ensures excellent device lifetime and reliability.

LM7805

Abstract: PTF141501E
Contextual Info: Preliminary PTF141501E PTF141501F Thermally-Enhanced High Power RF LDMOS FETs 150 W, 1450 – 1500 MHz Description The PTF141501E and PTF141501F are thermally-enhanced 150-watt, GOLDMOS FETs intended for DAB applications. The devices are characterized for Digital Audio Broadcast operation in the 1450 to 1500 MHz

PTF180301E

Abstract: LM7805 RESISTOR 2020 package 47 ohm 180301E
Contextual Info: PTF180301E PTF180301F Thermally-Enhanced High Power RF LDMOS FETs 30 Watt, 1805 – 1880 MHz, 1930 – 1990 MHz Description The PTF180301E and PTF180301F are 30-watt, internally-matched GOLDMOS FETs intended for GSM EDGE and CDMA applications in the DCS/PCS band. Thermally-enhanced packaging provides the coolest

SMD TRANSISTOR MARKING DE

Abstract: TSDF54040 smd sot-363 rf amplifier smd wd4 smd transistor g1
Contextual Info: TSDF54040 Vishay Telefunken Dual - MOSMIC– two AGC Amplifiers for TV–Tuner Prestage with 5 V Supply Voltage MOSMIC - MOS Monolithic Integrated Circuit Electrostatic sensitive device. Observe precautions for handling. Applications Low noise gain controlled input stages in UHF-and

TSDF52424

Abstract: AGC Amplifiers smd RF low noise sot-363 9296
Contextual Info: TSDF52424 Vishay Telefunken Dual - MOSMIC– two AGC Amplifiers for TV–Tuner Prestage with 5 V Supply Voltage MOSMIC - MOS Monolithic Integrated Circuit Electrostatic sensitive device. Observe precautions for handling. Applications Low noise gain controlled input stages in UHF-and