SOT23 JUNCTION CASE Search Results

Contextual Info: A Product Line of Diodes Incorporated FMMT491Q 60V NPN MEDIUM POWER TRANSISTOR IN SOT23 Description Mechanical Data This Bipolar Junction Transistor BJT has been designed to meet the • stringent requirements of Automotive Applications. • Case: SOT23

Contextual Info: A Product Line of Diodes Incorporated FMMT591Q 60V PNP MEDIUM POWER TRANSISTOR IN SOT23 Description Mechanical Data This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. • Features Case: SOT23

BF545A_BF545B_BF545C

Abstract: BF545B
Contextual Info: 3 SO T2 BF545A; BF545B; BF545C N-channel silicon junction field-effect transistors Rev. 4 — 15 September 2011 Product data sheet 1. Product profile 1.1 General description N-channel symmetrical silicon junction field-effect transistors in a SOT23 package.

Contextual Info: 3 SO T2 BF556A; BF556B; BF556C N-channel silicon junction field-effect transistors Rev. 4 — 15 September 2011 Product data sheet 1. Product profile 1.1 General description N-channel symmetrical silicon junction field-effect transistors in a SOT23 package.

Contextual Info: 3 SO T2 BF545A; BF545B; BF545C N-channel silicon junction field-effect transistors Rev. 4 — 15 September 2011 Product data sheet 1. Product profile 1.1 General description N-channel symmetrical silicon junction field-effect transistors in a SOT23 package.

BF556A_BF556B_BF556C

Contextual Info: 3 SO T2 BF556A; BF556B; BF556C N-channel silicon junction field-effect transistors Rev. 4 — 15 September 2011 Product data sheet 1. Product profile 1.1 General description N-channel symmetrical silicon junction field-effect transistors in a SOT23 package.

Contextual Info: SO T2 3 PMBFJ108; PMBFJ109; PMBFJ110 N-channel junction FETs Rev. 4 — 20 September 2011 Product data sheet 1. Product profile 1.1 General description Symmetrical N-channel junction FETs in a SOT23 package. 1.2 Features and benefits  High-speed switching

bf862

Contextual Info: DISCRETE SEMICONDUCTORS DAT book, halfpage M3D088 BF862 N-channel junction FET Product specification Supersedes data of 1999 Jun 29 2000 Jan 05 NXP Semiconductors Product specification N-channel junction FET BF862 FEATURES PINNING SOT23 • High transition frequency for excellent sensitivity in

BF862

Abstract: marking code 2Ap transistor 2Ap nxp marking code MCD809 MCD815 10102F fet bf862 nxp 102 MCD814
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BF862 N-channel junction FET Product specification Supersedes data of 1999 Jun 29 2000 Jan 05 NXP Semiconductors Product specification N-channel junction FET BF862 FEATURES PINNING SOT23 • High transition frequency for excellent sensitivity in

PMBFJ111

Contextual Info: SO T2 3 PMBFJ111; PMBFJ112; PMBFJ113 N-channel junction FETs Rev. 4 — 20 September 2011 Product data sheet 1. Product profile 1.1 General description Symmetrical N-channel junction FETs in a SOT23 package. 1.2 Features and benefits  High-speed switching

BF861A_BF861B_BF861C

Contextual Info: SO T2 3 BF861A; BF861B; BF861C N-channel junction FETs Rev. 5 — 15 September 2011 Product data sheet 1. Product profile 1.1 General description N-channel symmetrical junction field effect transistors in a SOT23 package. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against

bf861 application

Contextual Info: SO T2 3 BF861A; BF861B; BF861C N-channel junction FETs Rev. 5 — 15 September 2011 Product data sheet 1. Product profile 1.1 General description N-channel symmetrical junction field effect transistors in a SOT23 package. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against

FMMT634Q

Contextual Info: A Product Line of Diodes Incorporated FMMT634Q 100V NPN DARLINGTON TRANSISTOR IN SOT23 Description Mechanical Data This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. •  Features 

Contextual Info: A Product Line of Diodes Incorporated FMMT459Q 500V NPN HIGH VOLTAGE TRANSISTOR IN SOT23 Description Mechanical Data This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. •  Feature 

pmbfj310

Contextual Info: 3 SO T2 PMBFJ308; PMBFJ309; PMBFJ310 N-channel silicon field-effect transistors Rev. 4 — 20 September 2011 Product data sheet 1. Product profile 1.1 General description Symmetrical N-channel silicon junction field-effect transistors in a SOT23 package. CAUTION

top marking c2 sot23-5

Abstract: Marking C2 SOT23-5 part marking Ht1 q2 marking sot23-5 v32 sot23-5 MC78LC50HT1G marking aaaa sot23-3 Marking 305 SOT23-5 top marking c1 sot23-5 MC78LC50HT1
Contextual Info: MC78LC00 Series Micropower Voltage Regulator Features THIN SOT23−5 NTR SUFFIX CASE 483 5 Low Quiescent Current of 1.1 mA Typical Excellent Line and Load Regulation Maximum Operating Voltage of 12 V Low Output Voltage Option High Accuracy Output Voltage of 2.5%

SOT23-5 marking 016

Abstract: Marking 305 SOT23-5 MC78LC00 MC78LC00NTR MC78LC30HT1 MC78LC30NTR MJD32C LAL sot23-5 MARKING V32 SOT23
Contextual Info: MC78LC00 Series Micropower Voltage Regulator Features MARKING DIAGRAMS AND PIN CONNECTIONS THIN SOT23−5 NTR SUFFIX CASE 483 GND 1 Vin 2 Vout 3 5 Low Quiescent Current of 1.1 mA Typical Excellent Line and Load Regulation Maximum Operating Voltage of 12 V

TOT - 4301

Abstract: SOT 23 marking code a6 diode A6 SOD-323 MARK MINI-MELF DIODE marking 3
Contextual Info: 1N4148W, 1N4148WS SMALL SIGNAL DIODES .022 0.55 SOD-123 (1N4148W) .112 (2.85) .100 (2.55) ¨ This diode is also available in other case styles including: the DO-35 case with the type designation 1N4148, the Mini-MELF case with the type designation LL4148, and

sot23-5 Marking

Abstract: MC78LC30HT1G top marking c2 sot23 MC78LC00 MC78LC00NTR MC78LC30HT1 MC78LC30NTR MJD32C q2 marking sot23-5 MC78LC18
Contextual Info: MC78LC00 Series Micropower Voltage Regulator Features MARKING DIAGRAMS AND PIN CONNECTIONS THIN SOT23−5 NTR SUFFIX CASE 483 Gnd 1 Vin 2 Vout 3 5 N/C 5 Low Quiescent Current of 1.1 mA Typical Excellent Line and Load Regulation Maximum Operating Voltage of 12 V

sot-23 marking 213

Contextual Info: MOTOROLA Order this document by MMBTH24LT1/D SEMICONDUCTOR TECHNICAL DATA M M BTH24LT1 VH F M ixer Transistor NPN Silicon • Motorola Preferred Device COLLECTOR 3 Designed for • f j = 400 MHz Min @ 8 mA EMITTER CASE 318-08, STYLE 6 SOT-23 TO-236AB MAXIMUM RATINGS

Contextual Info: MOTOROLA Order this document by MMBD7000LT1/D SEMICONDUCTOR TECHNICAL DATA Dual Switching Diode M M BD7000LT1 Motorola Preferred Device 1 ° ANODE N ? i N ° 2 CATHODE CATHODE/ANODE MAXIMUM RATINGS EACH DIODE Symbol Bating Reverse Voltage CASE 318-08, STYLE 11

Contextual Info: BAS70 / -04 / -05 / -06 Taiwan Semiconductor Small Signal Product 225mW SMD Switching Diode FEATURES - Low turn-on voltage - Fast switching - PN junction guard ring for transient and ESD protection MECHANICAL DATA SOT-23 - Case: SOT- 23, molded plastic - Terminal: Matte tin plated, lead free,

k75 06 49

Abstract: MARKING CODE 13 SOT23 On semiconductor date Code sot-23 BAS70-7 Marking k7f RMS-49 sot-23 marking code BAS70 BAS70-04 BAS70-05
Contextual Info: BAS70/ -04/ -05/ -06 SURFACE MOUNT SCHOTTKY BARRIER DIODE SPICE MODEL: BAS70 NEW PRODUCT Features • · · Low Turn-on Voltage Fast Switching PN Junction Guard Ring for Transient and ESD Protection SOT-23 A B Mechanical Data · · · · · · · · Case: SOT-23, Molded Plastic

SOT-23 marking SW

Contextual Info: MOTOROlLA Order this document by m m bd 283slti/d SEMICONDUCTOR TECHNICAL DATA M onolithic Dual Sw itching Diodes MMBD2835LT1 MMBD2836LT1 CATHODE ANODE 3 % -N — ° 1 N ° 2 CATHODE 2 CASE 3 1 8-08, STYLE 12 SOT-23 TO-236AB MAXIMUM RATINGS (EACH DIODE)