T4C4001 Search Results

MT4C4001

Abstract: mt4c4001jdc sm03b
Contextual Info: MICRON TECHNOLOGY INC 55E D WÊ blllSHT ITT H I URN M T4C4001J DIE 1 MEG x 4 DRAM fAICRQN MILITARY DRAM DIE 1 MEG x 4 DRAM DIE FEATURES DIE OUTLINE Top View 14 13 12 11 10 15 5 4 3 2 □ □ □ □ □ □□□ □ □ □ □□□ □ DIE DATA BASE D15B

T4C4001JDJ-6

Abstract: mt4c4001
Contextual Info: T4C4001 J S 1 MEG X 4 DRAM [M IC R O N DRAM 1 MEG X 4 DRAM FEATURES • 1,024-cycle refresh distributed across 16ms (T4C4001J) or 128ms (M T4C4001J S) • Industry-standard pinout, timing, functions and packages • High-perform ance CM O S silicon-gate process

Contextual Info: M T 4 C 4 0 0 1 J S 1 MEG x 4 DRAM |U|(=RON DRAM 1 MEG x 4 DRAM 5V, STANDARD OR SELF REFRESH FEATURES • 1,024-cycle refresh distributed across 16ms (M T4C4001J) or 128ms (M T4C4001J S) • Industry-standard pinout, timing, functions and packages • High-perform ance CM OS silicon-gate process

intel 29F

Abstract: T7164 28F Intel LV6416 4c4007 5B810 32kxS 62832 dram cross reference T5C2568
Contextual Info: A Fast SRAM cross reference Vendor Cypress Hitachi Code ASCCode Description Code ASC Code CY 7C 185 A S7C 164 81x8 M C M 6264C AS7C164 8Kx8 CY 7C 199 A 57C 256 32K x8 M C M 6206D A S7C2S6 32K x8 C Y 7 C J3 9 9 A S7C 32S6 3 2 K * 8 3V M CM 62V06D A S7C 3256

Contextual Info: 1, 2 MEG X 32 DRAM SIMMs MICRON • ItCHtfULOGYIMC D R A M L ^ r iA A lV I MT8D132 X MT16D232(X) MODULE FEATURES PIN ASSIGNMENT (Front View) • JEDEC- and industry-standard pinout in a 72-pin, single in-line m emory module (SIMM) • 4M B (1 M eg x 32) and 8MB (2 M eg x 32)

T4C4001JDJ-6

Abstract: T4C4001
Contextual Info: DRAM 1 MEG X 4 DRAM LOW POWER, EXTENDED REFRESH FEATURES • Industry standard x4 pinout, tim ing, functions and packages • High-performance, CM OS silicon-gate process • Single +5V ±10% power supply • All inputs, outputs and clocks are fully TTL compatible

MT4C4001

Contextual Info: MT20D240 2 MEG X 40 DRAM M ODULE p iC R O fS J 2 MEG X 40 DRAM DRAM MODULE NEW I FAST PAGE MODE MT20D240 LOW POWER, EXTENDED REFRESH (MT20D240 L) FEATURES • • • • PIN ASSIGNMENT (Top View) 72-pin single-in-line package High-performance CM OS silicon-gate process.

MT4C4007JDJ

Abstract: ST bsx 26
Contextual Info: MTHat3Z XI(SFr MTt6D222(XJ (S | t M B G *ZM EE jc3ZDRÄIW1 M O D ULE DRAM 1 MEG, 2 MEG x 32 M UW D U L tr - 4, 8 MEGABYTE, 5V, OPTIONAL SELF REFRESH, FAST PAGE OR EDO PAGE MOPE FEATURES • JE D E C - a n d i n d u s tr y - s ta n d a r d pinout in a 72-pin,

Contextual Info: MICR ON S E M I C O N D U C T O R INC b3E D • b l l l S M T D D D V bb ? 51b ■ MRN MT4C4004J 1 MEG x 4 DRAM I^HCRON DRAM 1 MEG x 4 DRAM QUAD CAS PARITY, FAST-PAGE-MODE FEATURES _ PIN ASSIGNMENT Top View • Four independent CAS controls, allowing individual

Contextual Info: MT4C4004J 1 MEG X 4 DRAM |U|IC=RON DRAM 1 MEG x 4 DRAM FEATURES _ • Four independent CAS controls, allowing individual manipulation to each of the four data input/output ports DQ1 through DQ4 . • Offers a single chip solution to byte level parity for 36bit words when using 1 Meg x 4 DRAMs for memory

Contextual Info: T4C4001 J S 1 MEG X 4 DRAM (MICRON DRAM 1 MEG x 4 DRAM 5V, STANDARD OR SELF REFRESH • 1,024-cycle refresh distributed across 16ms (T4C4001J) or 128ms (T4C4001J S) • Industry-standard pinout, timing, functions and packages • High-perform ance CM OS silicon-gate process

pin diagram for IC 7476

Abstract: INTERNAL DIAGRAM OF IC 7476
Contextual Info: ADVANCE |U|ICRON 1 MEG 1 MEG DRAM MODULE MT16D T 164 64 DRAM MODULE 64 DRAM FAST PAGE MODE (MT16D(T)164) LOW POWER, EXTENDED REFRESH (MT16D(T)164 L) FEATURES PIN A SSIG N M E N T (Top View) • Industry-standard pinout in a 168-pin, dual read-out, single in-line package

marking wml

Abstract: j-l003 marking WMM C1994 MT4C4001 MT4C4001J MT4C4001JDJ-6
Contextual Info: M ir n O M I .“ hT M T 4C 4001J S 1 M EG X 4 D R A M 1 MEG DRAM X 4 DRAM STANDARD OR SELF REFRESH a J3 > FEATURES • 1,024-cycle refresh distributed across 16ms (T4C4001J) or 128ms (T4C4001J S) • Industry-standard pinout, timing, functions and packages

DM-01

Abstract: Techno RC
Contextual Info: MT2D18 1 MEG x 8 DRAM MODULE I^ IC R O N REFRESH _ Returning RAS and CAS HIGH terminates a m emory cycle and decreases chip current to a reduced standby level. A lso, the chip is preconditioned for the next cycle during the RAS HIGH time. M emory cell data is retained in its

Contextual Info: I^ IIC R O N 1 MEG DRAM MODULE 1 MEG X X MT10D140 40 DRAM MODULE 40 DRAM FAST-PAGE-MODE MT10D140 LOW POWER, EXTENDED REFRESH (MT10D140 L) FEATURES PIN ASSIGNMENT (Top View) • 72-p in sin g le-in -lin e p ack ag e • • • • • • OPTIONS 72 -Pin

T4C4001

Contextual Info: M T4C 4001J 1 MEG X 4 DRAM [MICRON 1 MEG x 4 DRAM FAST PAGE MODE FEATURES PIN ASSIGNMENT Top View • Ind u stry stan d ard x4 p in o u t, tim in g , fu n ctio n s and p ackages • H ig h -p erfo rm an ce, C M O S silico n -g a te p ro cess • Sin g le + 5 V ± 1 0 % p o w er sup p ly

RRH cl2

Abstract: BBU RRH
Contextual Info: T4C4001 J L 1 MEG X 4 DRAM I^IICRDN DRAM 1 MEG x 4 DRAM DRAM STANDARD OR LOW POWER, EXTENDED REFRESH FEATURES • 1,024-cycle refresh distributed across 16ms (T4C4001J) or 128ms (T4C4001J L) • Industry-standard x4 pinout, timing, functions and packages