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    TO251 Price and Stock

    Bivar Inc TO-25-100

    Circuit Board Hardware - PCB Dis-O-Pad TO-25 Round .48 in OD
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    Mouser Electronics TO-25-100
    • 1 $0.12
    • 10 $0.083
    • 100 $0.063
    • 1000 $0.054
    • 10000 $0.052
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    Newark TO-25-100 Bulk 1,000
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    Bivar Inc TO-25-100E

    Circuit Board Hardware - PCB Dis-O-Pad TO-25 Round .48 in OD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics TO-25-100E
    • 1 $0.12
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    • 1000 $0.048
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    Newark TO-25-100E Bulk 1,000
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    Bivar Inc TO-25-100DR

    Circuit Board Hardware - PCB
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    Mouser Electronics TO-25-100DR
    • 1 $0.12
    • 10 $0.083
    • 100 $0.063
    • 1000 $0.049
    • 10000 $0.043
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    Bivar Inc TO-25-100ECR

    Circuit Board Hardware - PCB Dis-O-Pad TO-25 Round .48 in OD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics TO-25-100ECR
    • 1 $0.12
    • 10 $0.083
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    • 1000 $0.048
    • 10000 $0.043
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    Newark TO-25-100ECR Bulk 1,000
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    • 1000 $0.084
    • 10000 $0.068
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    Bivar Inc TO-25-130

    Circuit Board Hardware - PCB Dis-O-Pad TO-25 Round .48 in OD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics TO-25-130
    • 1 $0.12
    • 10 $0.083
    • 100 $0.063
    • 1000 $0.048
    • 10000 $0.043
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    Newark TO-25-130 Bulk 1,000
    • 1 -
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    • 1000 $0.084
    • 10000 $0.068
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    Find more TO251 price and stock on Findchips.com

    TO251 Datasheets (19)

    Part ECAD Model Manufacturer Description Curated Type PDF
    TO-251 Harris Semiconductor HARRIS HYPER-FAST RECOVERY RECTIFIER PRODUCT LINE Original PDF
    TO-251 SYNC Power Package Outline Original PDF
    TO2510 FCI 25 Amp Plastic Silicon Rectifiers Scan PDF
    TO-25-100 Bivar Wash-Away Spacers - Wash-Away Component and General Purpose Spacers Original PDF
    TO-25-100 Bivar Component Insulators, Mounts, Spacers, Hardware, Fasteners, Accessories, SPACER WASHAWAY Original PDF
    TO-25-100E Bivar Wash-Away Spacers - Wash-Away Component and General Purpose Spacers Original PDF
    TO-25-100E Bivar Component Insulators, Mounts, Spacers, Hardware, Fasteners, Accessories, SPACER WASHAWAY Original PDF
    TO-25-100ECR Bivar Component Insulators, Mounts, Spacers, Hardware, Fasteners, Accessories, SPACER WASHAWAY Original PDF
    TO-25-100ECRDR Bivar Component Insulators, Mounts, Spacers, Hardware, Fasteners, Accessories, SPACER WASHAWAY Original PDF
    TO-25-120 Bivar Wash-Away Spacers - Wash-Away Component and General Purpose Spacers Original PDF
    TO-25-120 Bivar Component Insulators, Mounts, Spacers, Hardware, Fasteners, Accessories, SPACER WASHAWAY Original PDF
    TO-25-130 Bivar Wash-Away Spacers - Wash-Away Component and General Purpose Spacers Original PDF
    TO-25-130 Bivar Component Insulators, Mounts, Spacers, Hardware, Fasteners, Accessories, SPACER WASHAWAY Original PDF
    TO-25-150E Bivar Wash-Away Spacers - Wash-Away Component and General Purpose Spacers Original PDF
    TO-25-150E Bivar Component Insulators, Mounts, Spacers, Hardware, Fasteners, Accessories, SPACER WASHAWAY Original PDF
    TO-251AA Harris Semiconductor HARRIS HYPER-FAST RECOVERY RECTIFIER PRODUCT LINE Original PDF
    TO-251AA Package International Rectifier Case Outline and Dimensions Original PDF
    TO-251AA Package Intersil 3 LEAD JEDEC TO-251AA PLASTIC PACKAGE Original PDF
    TO-251 Package Intersil 2 LEAD JEDEC STYLE TO-251 PLASTIC PACKAGE (FOR RECTIFIERS ONLY) Original PDF

    TO251 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NTE2522

    Abstract: NTE2523
    Text: NTE2522 NPN & NTE2523 (PNP) Silicon Complementary Transistors High Speed Switch TO251 Features: D High Current Capacity D High Collector−Emitter Saturation Voltage D TO251 Type Package Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)


    Original     		PDF NTE2522 NTE2523 200mA NTE2522 NTE2523

    NTE2524

    Abstract: NTE2525 to251
    Text: NTE2524 NPN & NTE2525 (PNP) Silicon Complementary Transistors High Current Switch TO251 Features: D Low Collector−Emitter Saturation Voltage D High Current and High fT D Excellent Linearity of hFE D Fast Switching Time D TO251 Type Package Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)


    Original     		PDF NTE2524 NTE2525 10IB1 -10IB2 NTE2525, NTE2524 NTE2525 to251

    NTE2980

    Abstract: 77A DIODE
    Text: NTE2980 Logic Level MOSFET N−Channel, Enhancement Mode High Speed Switch TO251 Features: D Dynamic dv/dt Rating D Logic Level Gate Drive D RDS on Specified at VGS = 4V & 5V D Fast Switching D TO251 Type Package Absolute Maximum Ratings: Drain Current, ID


    Original     		PDF NTE2980 00A/s, NTE2980 77A DIODE

    SP*02N60

    Abstract: P-TO252 SPD02N60 SPU02N60
    Text: SPD02N60 SPU02N60 Preliminary data SIPMOS Power Transistor • N-Channel • Enhancement mode • Avalanche rated Type VDS ID SPD02N60 600 V 2 A SPU02N60 Pin 1 Pin 2 Pin 3 G D S RDS on @ VGS Package VGS = 10 V P-TO252 5.5 Ω P-TO251 Maximum Ratings, at T j = 25 °C, unless otherwise specified


    Original     		PDF SPD02N60 SPU02N60 P-TO252 P-TO251 Q67040-S4133 Q67040-S4127-A2 SP*02N60 P-TO252 SPD02N60 SPU02N60

    STGD3NC120H

    Abstract: No abstract text available
    Text: STGD3NC120H 7 A, 1200 V very fast IGBT Datasheet − production data Features • High voltage capability ■ High speed TAB Applications ■ Home appliance ■ Lighting 3 2 1 Description IPAK TO251 This device is a very fast IGBT developed using advanced PowerMESH technology. This


    Original     		PDF STGD3NC120H GD3NC120H STGD3NC120H-1 STGD3NC120H

    01n60

    Abstract: 01N60C3 SPS01N60C3
    Text: SPS01N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 6 Ω ID 0.8 A • New revolutionary high voltage technology • Ultra low gate charge PG-TO251-3-11 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPS01N60C3 PG-TO251-3-11 PG-TO251-3-11 01N60C3 01n60 01N60C3 SPS01N60C3

    04N60C3

    Abstract: 04N60C 04N60 SPU04N60C3 P-TO252 SDP06S60 SPD04N60C3
    Text: SPD04N60C3 SPU04N60C3 Final data Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.95 Ω ID 4.5 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO251 P-TO252 • Extreme dv/dt rated • High peak current capability


    Original     		PDF SPD04N60C3 SPU04N60C3 P-TO251 P-TO252 Q67040-S4412 04N60C3 04N60C3 04N60C 04N60 SPU04N60C3 P-TO252 SDP06S60 SPD04N60C3

    02N60C3

    Abstract: 02N60 Q67040-S4420 GPT09051 P-TO252 SPD02N60C3 SPU02N60C3 02N6
    Text: SPD02N60C3 SPU02N60C3 Final data Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 3 Ω ID 1.8 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO251 P-TO252 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPD02N60C3 SPU02N60C3 P-TO251 P-TO252 Q67040-S4420 02N60C3 02N60C3 02N60 Q67040-S4420 GPT09051 P-TO252 SPD02N60C3 SPU02N60C3 02N6

    03n60s5

    Abstract: 03n60 P-TO251-3-1 P-TO252 SPD03N60S5 SPU03N60S5
    Text: SPU03N60S5 SPD03N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 1.4 Ω ID 3.2 A P-TO252 • Periodic avalanche rated P-TO251-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPU03N60S5 SPD03N60S5 P-TO252 P-TO251-3-1 Q67040-S4227 03N60S5 03n60s5 03n60 P-TO251-3-1 P-TO252 SPD03N60S5 SPU03N60S5

    02N60S5

    Abstract: 02n60 P-TO251-3-1 SPD02N60S5 SPU02N60S5 P-TO252
    Text: SPU02N60S5 SPD02N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A P-TO252 • Periodic avalanche rated P-TO251-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPU02N60S5 SPD02N60S5 P-TO252 P-TO251-3-1 Q67040-S4226 02N60S5 02N60S5 02n60 P-TO251-3-1 SPD02N60S5 SPU02N60S5 P-TO252

    03n60s5

    Abstract: No abstract text available
    Text: SPU03N60S5 SPD03N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 1.4 Ω ID 3.2 A PG-TO252. • Periodic avalanche rated • Extreme dv/dt rated PG-TO251. 2 • Ultra low effective capacitances


    Original     		PDF SPU03N60S5 SPD03N60S5 PG-TO252. PG-TO251. SPD03N60S5 Q67040-S4227 Q67040-S4187 03n60s5

    Untitled

    Abstract: No abstract text available
    Text: SPU07N60S5 SPD07N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO-251 and TO-252 VDS 600 V RDS(on) 0.6 Ω ID 7.3 A PG-TO252. • Ultra low gate charge • Periodic avalanche rated PG-TO251.


    Original     		PDF SPU07N60S5 SPD07N60S5 O-251 O-252 PG-TO252. PG-TO251. SPD07N60S5

    08p06p

    Abstract: No abstract text available
    Text: SPD08P06P G SIPMOS Power-Transistor Product Summary Features • P-Channel • Enhancement mode V DS -60 V R DS on ,max 0.3 Ω ID -8.8 A • Avalanche rated • dv /dt rated PG-TO252-3 • 175°C operating temperature PG-TO251-3 • Pb-free lead finishing; RoHS compliant


    Original     		PDF SPD08P06P PG-TO252-3 PG-TO251-3 08P06P SPD08P06PG 08p06p

    SPD01N60S5

    Abstract: 01N60S5 SPU01N60S5 01N60 P-TO251-3-1 P-TO252 Q67040-S4188 Q67040-S4193
    Text: SPU01N60S5 SPD01N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated VDS 600 V RDS on 6 Ω ID 0.8 A P-TO252 P-TO251-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPU01N60S5 SPD01N60S5 P-TO252 P-TO251-3-1 Q67040-S4193 01N60S5 SPD01N60S5 01N60S5 SPU01N60S5 01N60 P-TO251-3-1 P-TO252 Q67040-S4188 Q67040-S4193

    2n0308

    Abstract: C1904
    Text: SPU30N03S2-08 Preliminary data OptiMOS Power-Transistor Product Summary Feature  N-Channel  Enhancement mode 175°C operating temperature  dv/dt rated VDS 30 RDS on 8.2 m ID 30 A V P-TO251 Type Package Ordering Code Marking SPU30N03S2-08 P-TO251 Q67042-S4140


    Original     		PDF SPU30N03S2-08 P-TO251 Q67042-S4140 2N0308 BSPU30N03S2-08, SPU30N03S2-08 2n0308 C1904

    2N03L10

    Abstract: 2N03L
    Text: SPU30N03S2L-10 Preliminary data OptiMOSâ Power-Transistor Product Summary Feature  N-Channel  Logic Level  Low on-resistance RDS on  Excellent Gate Charge x RDS(on) product (FOM) VDS 30 V RDS(on) 10 m ID 30 A P- TO251 -3-1 Superior thermal resistance


    Original     		PDF SPU30N03S2L-10 SPU30N03S2L-10 Q67042-S4042 2N03L10 BSPU30N03S2L-10, 2N03L10 2N03L

    2N0308

    Abstract: No abstract text available
    Text: SPU30N03S2-08 OptiMOS Power-Transistor Product Summary Feature VDS 30 V •Enhancement mode RDS on 8.2 mΩ •Low On-Resistance RDS(on) ID 30 A •N-Channel •Excellent Gate Charge x R DS(on) product (FOM) P- TO251 -3-1 •Superior thermal resistance


    Original     		PDF SPU30N03S2-08 SPU30N03S2-08 Q67042-S4140 2N0308 BSPU30N03S2-08, 2N0308

    20n03l

    Abstract: IPU20N03L Q67042-S4106 20n03 TO-251 Outline ANPS071E IPD20N03L
    Text: IPD20N03L IPU20N03L OptiMOS Buck converter series Product Summary Feature VDS 30 V •Logic Level RDS on 20 mΩ •Low On-Resistance RDS(on) ID 30 A •N-Channel •Excellent Gate Charge x R DS(on) product (FOM) P- TO251 -3-1 P- TO252 -3-11 •Superior thermal resistance


    Original     		PDF IPD20N03L IPU20N03L Q67042-S4050 20N03L Q67042-S4106 20n03l IPU20N03L Q67042-S4106 20n03 TO-251 Outline ANPS071E IPD20N03L

    SPD02N60S5

    Abstract: 02N60S5 P-TO252 SPU02N60S5
    Text: SPU02N60S5 SPD02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A P-TO252. • Periodic avalanche rated • Extreme dv/dt rated P-TO251. 2 • Ultra low effective capacitances


    Original     		PDF SPU02N60S5 SPD02N60S5 P-TO252. P-TO251. Q67040-S4226 02N60S5 SPD02N60S5 02N60S5 P-TO252 SPU02N60S5

    07N60S5

    Abstract: No abstract text available
    Text: SPU07N60S5 SPD07N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO-251 and TO-252 VDS 600 V RDS(on) 0.6 Ω ID 7.3 A PG-TO252 • Ultra low gate charge • Periodic avalanche rated PG-TO251


    Original     		PDF SPU07N60S5 SPD07N60S5 O-251 O-252 PG-TO252 PG-TO251 SPD07N60S5 PG-TO251 07N60S5

    RU1HL13K

    Abstract: ruichips
    Text: RU1HL13K P-Channel Advanced Power MOSFET MOSFET Features Pin Description • -100V/-13A, RDS ON =160mΩ(Typ.)@VGS=-10V RDS (ON) =180mΩ(Typ.)@VGS=-4.5V • Super High Dense Cell Design • ESD protected • Reliable and Rugged TO251 • 100% avalanche tested


    Original     		PDF RU1HL13K -100V/-13A, RU1HL13K ruichips

    NTE2528

    Abstract: NTE2529
    Text: NTE2528 NPN & NTE2529 (PNP) Silicon Complementary Transistors High Voltage Switch TO251 Features: D High Voltage and High Current Capacity D Fast Switching Time D TO251 Type Package Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180V


    Original     		PDF NTE2528 NTE2529 10IB1 -10IB2 700mA, NTE2529, NTE2528 NTE2529

    14n03L

    Abstract: K3530 14n03 IPU14N03L IPU14N03LA
    Text: IPU14N03L Preliminary data OptiMOSâ Power-Transistor Buck converter series Product Summary Feature  N-Channel  Logic Level  Low on-resistance RDS on  Excellent Gate Charge x RDS(on) product (FOM) VDS 30 RDS(on) ID V m 14.4 30 A P-TO251 Superior thermal resistance


    Original     		PDF IPU14N03L P-TO251 Q67042-S4115 14N03L 14n03L K3530 14n03 IPU14N03L IPU14N03LA

    07n60s5

    Abstract: P-TO251-3-1 P-TO252 SPD07N60S5 SPU07N60S5 transistor 07n60s5
    Text: SPU07N60S5 SPD07N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO-251 and TO-252 VDS 600 V RDS(on) 0.6 Ω ID 7.3 A P-TO252 • Ultra low gate charge P-TO251-3-1 • Periodic avalanche rated


    Original     		PDF SPU07N60S5 SPD07N60S5 O-251 O-252 P-TO252 P-TO251-3-1 Q67040-S4196 07N60S5 07n60s5 P-TO251-3-1 P-TO252 SPD07N60S5 SPU07N60S5 transistor 07n60s5