TO92A Search Results

TO92A

Abstract: 21g transistor Daiwa NPN Transistor TO92
Contextual Info: TO92 Small Signal Transistors Unit in mm Description 4 7MAX 12 7MIN 4 1MAX NPN SILICON HIGH VOLTAGE TRANSISTOR 1 27 18 08 5 1MAX 3 1 27 1 0 45 0 55MAX 2 0 45 Designed for general purposes and telephony applications PACKAGE TO-92 TO92A 1=Emitter Weight 2=Base

MMBT3906

Contextual Info: 2N3906 / MMBT3906 / PZT3906 PNP General-Purpose Amplifier Description This device is designed for general-purpose amplifier and switching applications at collector currents of 10 mA to 100 mA. 2N3906 PZT3906 MMBT3906 C C E E TO-92 SOT-23 SOT-223 B Mark:2A

pn2907

Contextual Info: PN2907 / MMBT2907 PNP General-Purpose Transistor Description This device is designed for use with general-purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from process 63. MMBT2907 PN2907 C E TO-92 SOT-23 Mark:2B EBC B Ordering Information

SOT-23 2N4403

Abstract: 2N4403
Contextual Info: 2N4403 / MMBT4403 PNP General-Purpose Amplifier Description This device is designed for use as a general-purpose amplifier and switch for collector currents to 500 mA. C E TO-92 SOT-23 EBC Mark:2T Figure 1. 2N4403 Device Package B Figure 2. MMBT4403 Device Package

Contextual Info: 2N 4123 NPN SILICO N IV IIC R O PLANAR EPITAX IA L bvebo C o lle cto r C utoff C urrent JCB0 Em itter Cutoff Current ^EBO Base-Em itter S aturation Voltage DC Current Gain SYMBOL BVCB0 bvceo MICRO FI F P T P O N ir^ I TH l\ V / lllV < 0 1 .1 V . MIN 40 30

MM1065

Contextual Info: MITSUMI Ultra-Low Power Consumption Low-Saturation Three-Pin Regulators with On/Off Pin MM1065 and 1165 Ultra-Low Power Consumption Low-Saturation Three-Pin Regulators with On/Off Pin Monolithic ICs MM1065 and 1165 Outline These ICs are stabilized power supply devices with ultra-low consumption currents, designed for a greatly

MM1257

Abstract: MMP-4A
Contextual Info: High-Precision Three-Pin Regulator MM1257 MITSUMI High-Precision Three-Pin Regulator Monolithic IC MM1257 Outline This IC is a high-precision high-voltage stabilized power supply device which stands out from ordinary lowsaturation three-pin regulators. It can be used at a wide range of output voltages, from 3V to 12V, delivering output currents up to 100mA. It

T 9036

Abstract: S7136AM
Contextual Info: S7136AM Semiconductor Bipolar Linear Integrated Circuit Description • As Control Circuit of Battery-Backed Memory • As Measure Against Erroneous Operations at Power On-Off • As Resetting Function for the CPU-Mounted Equipment - PC, Printer, VTR, Fax, C-TV etc.

marking 93 sot-89

Abstract: LR7350 MARKING 93 sot-89 voltage regulator LR73XX marking 93, sot-89 R734 sot-89 voltage regulator marking 93 A0 SOT-89 2.5 73XX-A A0 SOT-89
Contextual Info: LESHAN RADIO COMPANY, LTD. LR73XX Low Power 250mA CMOS LDO Features z z z z z z z Ultra low quiescent current: 1µA typ. High input voltage (up to 12V) Output voltage: 1.5V, 2.5V, 3.0V, 3.3V, 3.6V, 4.4V, 5.0V Output voltage accuracy: tolerance ±3% z Maximum output current: 250mA

Contextual Info: Silicon Junction FETs Small Signal 2SK0301 (2SK301) Silicon N-Channel Junction FET For low-frequency amplification For switching unit: mm M Di ain sc te on na tin nc ue e/ d 5.0±0.2 4.0±0.2 5.1±0.2 • Features ■ Absolute Maximum Ratings (Ta = 25°C)

BC363

Abstract: BC387 BC514 BC682 bc431n BC512 BC526 bc535 BC388 BC427
Contextual Info: Medium Power Amplifiers and Switches TYPE NO. POLA­ RITY CASE HFE MAXIMUM RATINGS VCEO Pd IC mW (A) (V) min max IC (mA) VCE (V) VCE(sat) max (V) (A) IT min (MHz) Cob COMPLE­ max MENTARY TYPE (PF) 2.5 100 100 100 100 5 1 1 10 10 0.25 0.5 0.5 0.25 0.25 0.05

BFW45

Abstract: BFR59 BFS89 BFS90 BFS91 BFT47 BFT48 BFT49 BFT57 BFT58
Contextual Info: High Voltage Transistors TYPE NO. 101 POLA­ RITY CASE MAXIMUM RATINGS VCEO IC Pd ICM* VCER* mA (mW) (V) VCE(sat) HFE min max IC (mA) VCE (V) m ai (V) IC (mA) fr min (MHz) Cob Cre* max (MHz) BFR59 BFS89 BFS90 BFS91 BFT47 N N P P N TO-39 TO-39 TO-39 TO-39

MPS9631

Abstract: T1S91 MPS9632 MPS9630 TIS92 MPS9633 SE4010 TIS61 MPS9600 MPS9634
Contextual Info: Low Level and General Purpose Amplifiers TYPE POLA­ NO. RITY MPS9600 MPS9601 MPS9602 MPS9630 MPS9631 N N N N N CASE TO-92A TO-92A TO-92A TO-92A TO-92A VCE sat HFE MAXIMUM RATINGS Pd IC VCEO (mW) (mA) (V) min max 300 300 300 350 350 100 100 100 100 100 12

BF117

Abstract: BF294 BF178 BF299 BC236 BF174 BF298 BC312 BF120 BF137
Contextual Info: High Voltage Transistors TYPE NO. POLA­ RITY CASE MAXIMUM RATINGS HFE Pd VCEO IC ICM* VCER* min mai mW (mA) (V) VCE(sat) IC (mA) VCE max (V) (V) IC (mA) fT min (MHz) Cob Cre* max (MHz) BC236 BC285 BC312 BC393 BC394 N N N P N TO-106 TO-18 TO-39 TO-18 TO-18

Contextual Info: STL72 High voltage fast-switching NPN power transistor Features • High voltage capability ■ Low spread of dynamic parameters ■ Very high switching speed s ct Application ■ u d o Compact fluorescent lamps (CFLs) Description TO-92 The device is manufactured using high voltage

2SC1222

Abstract: TO-92B 2SC1000 2SC1330 2SC923 2SC1328 2SC1327 2SC1213A 2SC1675 2SC858
Contextual Info: NO. UJ Li. X TYPE P O LA R ITY Low Level and General Purpose Amplifiers MAXIMUM RATINGS CASE Pd mW 'c (mA) V CEO (V) V CE(SAT) 'c min max (mA) VCE (V) max 'c (V) (mA) Cob N.F. max max (MHz) (pF) (dB) 4 20 15 10 fT min 2SC858 2SC900 2SC923 2SC945 2SC1000

bsy85

Abstract: BSW54 BSW65 MA8003 BSY52 BSY86 bsy90 CL168 TO-92B BSW61
Contextual Info: Medium Power Amplifiers and Switches M A X IM U M R A T IN G S >• TYPE NO. OC < -1 o a. H FE V C E S A T f T min Cob C O M PLE­ max max M EN TA R Y (MHz) (pF) TYPE CASE Pd (mW) 'c (A ) V C EO (V ) min 0.8 0.8 0.8 0.8 0.8 1 40 30 30 40 40 80 100 40 100

2SC1473

Abstract: 2SA1018 2SA1767 2SC1473A TRANSISTOR 2sc1473
Contextual Info: Transistor 2SC1473, 2SC1473A Silicon NPN triple diffusion planer type For general amplification 2SC1473 complementary to 2SA1018 2SC1473A complementary to 2SA1767 Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 High collector to emitter voltage VCEO. High transition frequency fT.

2SA1123

Abstract: 2SC2631
Contextual Info: Transistor 2SA1123 Silicon PNP epitaxial planer type For low-frequency high breakdown voltage amplification Complementary to 2SC2631 Unit: mm ● ● ● Satisfactory foward current transfer ratio hFE collector current IC characteristics. High collector to emitter voltage VCEO.

2SA1123

Abstract: 2SC2631
Contextual Info: Transistor 2SC2631 Silicon NPN epitaxial planer type For low-frequency high breakdown voltage amplification Complementary to 2SA1123 Unit: mm 5.0±0.2 ● 0.7±0.1 12.9±0.5 ● Satisfactory linearity of forward current transfer ratio hFE. High collector to emitter voltage VCEO.

2SA564A-P

Abstract: 2SA640 2SA564 TO-92B 2SC537 2SC644 2SA876H 2N5138 2SA1715 2SC372
Contextual Info: TYPE NO. H M A X IM U M R A TIN G S CASE Pd mW 'c Im A) V CEO (V) min FE V CE(SAT) max •c lm A | V CE (V) max (V) 'c Im A I fT min (MHz) Cob N.F. max max (pF) (dB) _ 2N5138 2N 5172 2N5209 2N5210 2N5219 P IM N N N TO -IO 6 TO-92B T O -92A TO-92A TO -92A

2N5815

Abstract: 2N5225 N5226 2N4971 2N5042 2N5143 2N4235 2N4236 2N4238 2N4314
Contextual Info: Medium Power Amplifiers and Switches H P O L A R IT Y M A X IM U M R A T IN G S C A SE 2N4238 2N4239 2N4314 2N4400 2N4401 2N4402 N N P N N P TO-39 TO-39 TO-39 TO-92A TO-92A TO-92A 1000 1000 1000 5004 5004 500 ♦ 1 1 1 0.6 0.6 0.6 60 80 65 40 40 40 30 30 50

2N5816

Abstract: 2N5815 2N5225 2N5143 2N5447 2N4969 2N5226 2N5450 2N5818 2N5819
Contextual Info: Medium Power Amplifiers and Switches TYPE NO. POLA­ RITY CASE MAXIMUM RATINGS HFE Pd IC VCEO mW (A) (V) min max IC (mA) VCE (V) VCE(sat) max (V) (A) IT min (MHz) Cob COM PLE­ max MENTARY TYPE (PF) 2N4953 2N4954 2N4969 2N4970 2N4971 N N N N P TO-92B TO-92B

TA-4650

Abstract: PST91xx
Contextual Info: System Reset PST91XX Monolithic IC PST91XX Series The fu n ctio n of th is low reset ty p e IC is to accurately reset system s after d e te ctin g th e supply vo lta g e at th e tim e of sw itching pow er on and instantaneous pow er o ff in various CPU and other logic system s. Further, this